Manufacturing method of semiconductor integrated circuit device
    4.
    发明授权
    Manufacturing method of semiconductor integrated circuit device 有权
    半导体集成电路器件的制造方法

    公开(公告)号:US07407823B2

    公开(公告)日:2008-08-05

    申请号:US11471712

    申请日:2006-06-21

    CPC classification number: G01R3/00 G01R1/07378 G01R31/2889

    Abstract: During probe testing using a prober having probe needles formed by using a manufacturing technology for a semiconductor integrated circuit device, reliable contact is ensured between the probe needles and test pads. A pressing tool having at least one hole portion formed therein and extending therethrough between the main and back surface thereof is prepared. An elastomer in the form of a sheet and a polyimide sheet are successively disposed on the main surface of the pressing tool. With th elastomer and the polyimide sheet being electrostatically attracted to the pressing tool, the pressing tool is disposed on a thin-film sheet such that the main surface thereof faces the back surface (the surface opposite to the main surface thereof formed with the probe) of the thin-film sheet. Then, the thin-film sheet with the pressing tool bonded thereto is attached to a probe card.

    Abstract translation: 在使用具有通过使用用于半导体集成电路器件的制造技术形成的探针的探针的探针测试期间,确保探针和测试垫之间的可靠接触。 制备具有形成在其中并在其主表面和后表面之间延伸穿过其中的至少一个孔部分的按压工具。 在压制工具的主表面上依次设置片状和聚酰亚胺片形式的弹性体。 利用弹性体,将聚酰亚胺片静电吸引到按压工具上,将压制工具设置在薄膜片上,使其主表面面向背面(与形成有探针的主表面相反的表面) 的薄膜片。 然后,将与其接合的按压工具的薄膜片安装在探针卡上。

    FABRICATION METHOD OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND PROBE CARD
    6.
    发明申请
    FABRICATION METHOD OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND PROBE CARD 失效
    半导体集成电路器件和探针卡的制造方法

    公开(公告)号:US20070108997A1

    公开(公告)日:2007-05-17

    申请号:US11555993

    申请日:2006-11-02

    CPC classification number: G01R1/07314

    Abstract: To provide a technique of firmly bringing a stylus and a test pad into contact with each other in carrying out a probe testing summarizingly for plural chips by using a prober having the stylus formed by a technique of manufacturing a semiconductor integrated circuit device, plane patterns of respective wirings are formed such that a wiring and a wiring electrically connected to the wiring or a wiring which is not electrically connected to the wiring overlap each other, and a plane pattern arranged with both of the wiring and the wiring is constituted at upper portions of probes. Further, patterns of the wirings are formed such that an interval of arranging the wirings and a density of arranging the wirings become uniform at respective wiring layers in a thin film sheet.

    Abstract translation: 为了提供一种牢固地使触针和测试垫彼此接触的技术,通过使用具有通过制造半导体集成电路器件的技术形成的触针的探针来对多个芯片进行总体测试测试,其平面图案 各布线形成为使布线和与布线电连接的布线或与布线不电连接的布线重叠,并且布置在布线和布线两者中的平面图形被构成在 探针。 此外,布线的图案形成为使得布线布置的间隔和布线的密度在薄膜片的各个布线层处变得均匀。

    Fabrication method of semiconductor integrated circuit device and its testing apparatus
    7.
    发明授权
    Fabrication method of semiconductor integrated circuit device and its testing apparatus 有权
    半导体集成电路器件及其测试装置的制造方法

    公开(公告)号:US06696849B2

    公开(公告)日:2004-02-24

    申请号:US09964708

    申请日:2001-09-28

    CPC classification number: G01R31/2831

    Abstract: A testing apparatus and a fabricating method of a semiconductor integrated circuit device for reducing the fabrication cost by placing, in the wafer level burn-in, divided contactors in equally contact with the full surface of wafer, enabling repair of each contactor and improving the yield of contactors. The cassette structure of the mechanical pressurizing system in the testing apparatus is structured with a plurality of divided silicon contactor blocks and a guide frame for integrating these blocks and employs the wafer full surface simultaneous contact system of the divided contactor integration type. Each probe of the silicon contactor is equally placed in contact in the predetermined pressure with each test pad of each chip of the test wafer by mechanically pressuring each silicon contactor block which moves individually, the test control signal is supplied to each chip and this test result signal is obtained for the wafer level burn-in test.

    Abstract translation: 一种半导体集成电路器件的测试装置和制造方法,用于通过在晶片级老化中放置与晶片的整个表面均匀接触的分割的接触器来降低制造成本,从而能够修复每个接触器并提高产量 的接触器。 测试装置中的机械加压系统的盒式结构由多个分开的硅接触器块和用于集成这些块的引导框架构成,并且采用分开的接触器一体化型的晶片全表面同时接触系统。 硅接触器的每个探针通过机械加压每个单独移动的硅接触器块,将测试控制信号提供给每个芯片,并且测试结果与测试晶片的每个芯片的每个测试焊盘等同地以预定压力接触 获得晶片级老化测试信号。

    Method of manufacturing semiconductor integrated circuit device
    9.
    发明授权
    Method of manufacturing semiconductor integrated circuit device 失效
    半导体集成电路器件的制造方法

    公开(公告)号:US08323992B2

    公开(公告)日:2012-12-04

    申请号:US13228334

    申请日:2011-09-08

    CPC classification number: G01R31/2889 G01R1/07314 G01R1/0735

    Abstract: The variation in the contact pressures of the plurality of contact terminals to the plurality of chip electrodes is decreased. A thin-film sheet (first sheet) includes: a principal surface (contact-terminal formation surface) on which a plurality of contactors (contact terminals) are formed; and a rear surface positioned on an opposite side to the principal surface. Also, in the thin film sheet, a plurality of wirings and dummy wiring are arranged between the principal surface and the rear surface. A slit formed of an opening portion penetrating from the principal surface of the thin-film sheet to the rear surface thereof is formed along the wiring between the dummy wiring and the contactor arranged at an end of a contactor group (first contact terminal group) in which the plurality of contactors are aligned.

    Abstract translation: 多个接触端子对多个芯片电极的接触压力的变化减小。 薄膜片(第一片)包括:形成有多个接触器(接触端子)的主表面(接触端子形成表面); 以及位于与主表面相对的一侧的后表面。 此外,在薄膜片中,在主面和背面之间配置有多根配线和虚设布线。 沿着布置在接触器组(第一接触端子组)的端部处的虚设布线和接触器之间的布线,形成有从薄膜片的主表面贯穿其后表面的开口部分形成的狭缝, 多个接触器对齐。

    Method of manufacturing a semiconductor integrated circuit device and a method of manufacturing a thin film probe sheet for using the same
    10.
    发明授权
    Method of manufacturing a semiconductor integrated circuit device and a method of manufacturing a thin film probe sheet for using the same 有权
    半导体集成电路器件的制造方法以及使用该半导体集成电路器件的薄膜探针片的制造方法

    公开(公告)号:US08062911B2

    公开(公告)日:2011-11-22

    申请号:US11958369

    申请日:2007-12-17

    CPC classification number: G01R3/00 G01R1/07342

    Abstract: A probe having a sufficient height is manufactured by selectively depositing, over the main surface of a wafer, a copper film in a region in which a metal film is to be formed and a region which will be outside an adhesion ring when a probe card is fabricated; forming the metal film, polyimide film, interconnect, another polyimide film, another interconnect and a further polyimide film; and then removing the wafer and copper film. According to the present invention, when probe testing is performed using a prober (thin film probe) having the probe formed in the above-described manner while utilizing the manufacturing technology of semiconductor integrated circuit devices, it is possible to prevent breakage of the prober and a wafer to be tested.

    Abstract translation: 通过选择性地在晶片的主表面上沉积在要形成金属膜的区域中的铜膜和当探针卡是在粘合环外部时将在粘合环外部的区域,制造具有足够高度的探针 制造的 形成金属膜,聚酰亚胺膜,互连,另一聚酰亚胺膜,另一互连和另外的聚酰亚胺膜; 然后取出晶片和铜膜。 根据本发明,在利用半导体集成电路器件的制造技术的情况下,使用具有以上述方式形成的探针的探测器(薄膜探针)进行探针测试时,可以防止探测器的破损, 待测试的晶圆。

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