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公开(公告)号：US07555074B2
公开(公告)日：2009-06-30
申请号：US11177532
申请日：2005-07-08
申请人： Bengt Lindoff , Mikael Zirén , Jonas Ohlsson , Johan Nilsson
发明人： Bengt Lindoff , Mikael Zirén , Jonas Ohlsson , Johan Nilsson
CPC分类号： H04B1/7097 , H04B1/1027 , H04B17/318 , H04B17/327 , H04B17/345 , H04L25/0224 , H04L25/0228 , H04L2027/0016 , H04L2027/0026 , H04L2027/0065
摘要： Methods and apparatus for estimating interference level in a receiver are dominated by the receiver's residual frequency error when the interference is low. The interference estimation method can be changed when the interference is low such that it compensates for the effects of residual frequency errors. A method of estimating an interference level includes the steps of detecting an interference level of the received signal; determining whether the detected interference level is low; and if the detected interference level is low, estimating the interference level by at least one of estimating in only a radial direction and de-rotating the received signal before estimating the interference level.
摘要翻译： 用于估计接收机中的干扰电平的方法和装置由干扰较低时的接收机的残余频率误差来支配。 干扰估计方法可以在干扰较低时进行改变，从而补偿残留频率误差的影响。 一种估计干扰电平的方法包括检测接收信号的干扰电平的步骤; 确定检测到的干扰电平是否低; 并且如果检测到的干扰电平低，则在估计干扰电平之前，仅通过在径向方向上的估计中的至少一个来估计干扰电平，并且使接收信号去旋转。
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公开(公告)号：US20060171449A1
公开(公告)日：2006-08-03
申请号：US11177532
申请日：2005-07-08
申请人： Bengt Lindoff , Mikael Zirén , Jonas Ohlsson , Johan Nilsson
发明人： Bengt Lindoff , Mikael Zirén , Jonas Ohlsson , Johan Nilsson
CPC分类号： H04B1/7097 , H04B1/1027 , H04B17/318 , H04B17/327 , H04B17/345 , H04L25/0224 , H04L25/0228 , H04L2027/0016 , H04L2027/0026 , H04L2027/0065
摘要： Methods and apparatus for estimating interference level in a receiver are dominated by the receiver's residual frequency error when the interference is low. The interference estimation method can be changed when the interference is low such that it compensates for the effects of residual frequency errors. A method of estimating an interference level includes the steps of detecting an interference level of the received signal; determining whether the detected interference level is low; and if the detected interference level is low, estimating the interference level by at least one of estimating in only a radial direction and de-rotating the received signal before estimating the interference level.
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公开(公告)号：US20070116100A1
公开(公告)日：2007-05-24
申请号：US11412543
申请日：2006-04-27
申请人： Bengt Lindoff , Bo Bernhardsson , Jonas Ohlsson
发明人： Bengt Lindoff , Bo Bernhardsson , Jonas Ohlsson
IPC分类号： H04B1/00
CPC分类号： H04B1/712 , H04B2201/7071 , H04B2201/709727
摘要： According to a method and apparatus taught herein, a Rake receiver circuit selectively operates with or without colored interference compensation, in dependence on current operating conditions. For example, in one embodiment the Rake receiver circuit comprises one or more processing circuits that are configured to generate Rake combining weights in a first mode of operation as first combining weights calculated from channel estimates corresponding to a set of Rake signal fingers. In a second mode, the processing circuit(s) generate the Rake combining weights as compensated combining weights obtained by compensating the first combining weights with second combining weights calculated from colored interference estimates corresponding to a set of Rake probing fingers.
摘要翻译： 根据本文教导的方法和装置，Rake接收器电路根据当前的操作条件选择性地在有或没有有色干涉补偿的情况下操作。 例如，在一个实施例中，Rake接收机电路包括一个或多个处理电路，其被配置为以第一操作模式生成Rake组合权重作为从对应于一组Rake信号指的信道估计计算的第一组合权重。 在第二模式中，处理电路产生Rake组合权重作为通过用对应于一组耙探测手指的有色干涉估计计算的第二组合权重来补偿第一组合权重而获得的补偿组合权重。
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公开(公告)号：US07680176B2
公开(公告)日：2010-03-16
申请号：US11412543
申请日：2006-04-27
申请人： Bengt Lindoff , Bo Bernhardsson , Jonas Ohlsson
发明人： Bengt Lindoff , Bo Bernhardsson , Jonas Ohlsson
IPC分类号： H04B1/69
CPC分类号： H04B1/712 , H04B2201/7071 , H04B2201/709727
摘要： According to a method and apparatus taught herein, a Rake receiver circuit selectively operates with or without colored interference compensation, in dependence on current operating conditions. For example, in one embodiment the Rake receiver circuit comprises one or more processing circuits that are configured to generate Rake combining weights in a first mode of operation as first combining weights calculated from channel estimates corresponding to a set of Rake signal fingers. In a second mode, the processing circuit(s) generate the Rake combining weights as compensated combining weights obtained by compensating the first combining weights with second combining weights calculated from colored interference estimates corresponding to a set of Rake probing fingers.
摘要翻译： 根据本文教导的方法和装置，Rake接收器电路根据当前的操作条件选择性地在有或没有有色干涉补偿的情况下操作。 例如，在一个实施例中，Rake接收机电路包括一个或多个处理电路，其被配置为以第一操作模式生成Rake组合权重作为从对应于一组Rake信号指的信道估计计算的第一组合权重。 在第二模式中，处理电路产生Rake组合权重作为通过用对应于一组耙探测手指的有色干涉估计计算的第二组合权重来补偿第一组合权重而获得的补偿组合权重。
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公开(公告)号：US11360083B2
公开(公告)日：2022-06-14
申请号：US15327971
申请日：2015-07-22
申请人： Heiner Linke , Alf Månsson , Christelle Prinz , Jonas Ohlsson , Cassandra Niman , Mercy Lard , Aleksandra Dabkowska , Nicklas Anttu
发明人： Heiner Linke , Alf Månsson , Christelle Prinz , Jonas Ohlsson , Cassandra Niman , Mercy Lard , Aleksandra Dabkowska , Nicklas Anttu
IPC分类号： G01N33/543 , G01N21/64 , G01N21/77 , B01L3/00 , G01N33/542 , B82Y15/00
摘要： A nanowire molecular sensor, and a molecular detection system, comprising a nanowire waveguide (30), a nanowire sidewall (51) functionalized in order to attach a molecule (54), and light emissive point sources (52), wherein the amount of light emitted at an end (53) of the waveguide is dependent of the amount of specific molecules attached to the sidewall of the nanowire. A method employing said sensor may be used for single cell detection and analysis.
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公开(公告)号：US09947829B2
公开(公告)日：2018-04-17
申请号：US13805273
申请日：2011-06-27
申请人： Jonas Ohlsson
发明人： Jonas Ohlsson
IPC分类号： H01L33/12 , B82Y10/00 , H01L29/06 , H01L33/18 , H01L21/02 , B82Y20/00 , B82Y40/00 , H01L33/00 , H01L33/06 , H01L33/08 , H01L33/24 , B82Y99/00
CPC分类号： H01L33/12 , B82Y10/00 , B82Y20/00 , B82Y40/00 , B82Y99/00 , H01L21/0237 , H01L21/02439 , H01L21/02444 , H01L21/02458 , H01L21/02488 , H01L21/02513 , H01L21/0254 , H01L21/02603 , H01L29/0665 , H01L29/0676 , H01L29/0684 , H01L33/007 , H01L33/06 , H01L33/08 , H01L33/18 , H01L33/24 , Y10S977/762
摘要： The present invention provides a substrate (1) with a bulk layer (3) and a buffer layer (4) having a thickness of less than 2 μm arranged on the bulk layer (3) for growth of a multitude of nanowires (2) oriented in the same direction on a surface (5) of the buffer layer (4). A nanowire structure, a nanowire light emitting diode comprising the substrate (1) and a production method for fabricating the nanowire structure is also provided. The production method utilizes non-epitaxial methods for forming the buffer layer (4).
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7.发明授权Method of producing precision vertical and horizontal layers in a vertical semiconductor structure 有权在垂直半导体结构中制造精密垂直和水平层的方法公开(公告)号：US09087896B2
公开(公告)日：2015-07-21
申请号：US14048502
申请日：2013-10-08
IPC分类号： H01L29/66 , H01L29/78 , B82Y10/00 , H01L29/06 , H01L29/12 , H01L29/775 , H01L29/786 , H01L29/49 , H01L29/51 , H01L33/24
CPC分类号： H01L29/7827 , B82Y10/00 , H01L29/0665 , H01L29/0673 , H01L29/0676 , H01L29/125 , H01L29/495 , H01L29/517 , H01L29/66439 , H01L29/66666 , H01L29/775 , H01L29/7828 , H01L29/78642 , H01L33/24 , Y10S977/888 , Y10S977/89
摘要： The present invention relates to providing layers of different thickness on vertical and horizontal surfaces (15, 20) of a vertical semiconductor device (1). In particular the invention relates to gate electrodes and the formation of precision layers (28) in semiconductor structures comprising a substrate (10) and an elongated structure (5) essentially standing up from the substrate. According to the method of the invention the vertical geometry of the device (1) is utilized in combination with either anisotropic deposition or anisotropic removal of deposited material to form vertical or horizontal layers of very high precision.
摘要翻译： 本发明涉及在垂直半导体器件（1）的垂直和水平表面（15,20）上提供不同厚度的层。 特别地，本发明涉及栅电极和在半导体结构中形成精密层（28），该半导体结构包括基底（10）和基本上从基底上竖立的细长结构（5）。 根据本发明的方法，将装置（1）的垂直几何结构与各向异性沉积或各向异性去除沉积材料结合使用以形成非常高精度的垂直或水平层。
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公开(公告)号：US08692301B2
公开(公告)日：2014-04-08
申请号：US13062018
申请日：2009-09-04
申请人： Lars Samuelson , Federico Capasso , Jonas Ohlsson
发明人： Lars Samuelson , Federico Capasso , Jonas Ohlsson
IPC分类号： H01L33/00 , H01L31/062 , H01L31/113
CPC分类号： H01L31/03529 , H01L31/105 , H01L31/1075 , Y02E10/50
摘要： The present invention provides a photodiode comprising a p-i-n or pn junction at least partly formed by first and second regions (2) made of semiconductor materials having opposite conductivity type, wherein the p-i-n or pn junction comprises a light absorption region (11) for generation of charge carriers from absorbed light. One section of the p-i-n or pn junction is comprises by one or more nanowires (7) that are spaced apart and arranged to collect charge carriers generated in the light absorption region (11). At least one low doped region (10) made of a low doped or intrinsic semiconductor material provided between the nanowires (7) and one of said first region (1) and said second region (2) enables custom made light absorption region and/or avalanche multiplication region of the active region (9).
摘要翻译： 本发明提供了一种光电二极管，其包括至少部分地由具有相反导电类型的半导体材料制成的第一和第二区域（2）形成的pin或pn结，其中pin或pn结包括用于产生 电荷载体从吸收的光。 p-i-n或pn结的一个部分由一个或多个间隔开并布置成收集在光吸收区域（11）中产生的电荷载流子的纳米线（7）构成。 提供在纳米线（7）与所述第一区域（1）和所述第二区域（2）中的一个之间的由低掺杂或本征半导体材料制成的至少一个低掺杂区域（10）使定制的光吸收区域和/或 活动区域（9）的雪崩倍增区域。
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公开(公告)号：US08265681B2
公开(公告)日：2012-09-11
申请号：US12044185
申请日：2008-03-07
申请人： Xiaohui Wang , Jonas Ohlsson , Magnus Öst
发明人： Xiaohui Wang , Jonas Ohlsson , Magnus Öst
IPC分类号： H04B7/185 , H04B7/00 , H04B1/00 , H04B17/00 , H04B1/38 , H04B15/00 , H04W4/00 , H04K1/02 , H04L27/10
CPC分类号： H04W52/12 , H04B2201/709727 , H04W52/20 , H04W52/241
摘要： Outer-loop power control methods and apparatus are disclosed. In an exemplary embodiment, a short-term block error rate is measured for a received signal, and a coarse adjustment to a target signal-to-interference ratio (SIR) is calculated as a function of the short-term block error rate, a target block error rate, and a first loop tuning parameter. In some embodiments, a fine adjustment to the target SIR is also calculated, as a function of a smoothed block error rate, the target block error rate, and a second loop tuning parameter. The coarse adjustment provides quick responsiveness to received block errors, while the fine adjustment moderates the coarse adjustments by accounting for a longer-term view of the received block error rate. The target SIR adjustments disclosed herein may be computed in each of several iterations of an outer-loop power control loop.
摘要翻译： 公开了外环功率控制方法和装置。 在示例性实施例中，针对接收信号测量短期块错误率，并且根据短期块错误率计算对目标信号干扰比（SIR）的粗略调整， 目标块错误率和第一个循环调整参数。 在一些实施例中，还根据平滑的块错误率，目标块错误率和第二环路调整参数来计算对目标SIR的精细调整。 粗略调整提供对接收到的块错误的快速响应，而微调通过考虑接收到的块错误率的长期视图来缓和粗调。 可以在外环功率控制回路的几次迭代中的每一个中计算本文公开的目标SIR调整。
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公开(公告)号：US08067299B2
公开(公告)日：2011-11-29
申请号：US12662962
申请日：2010-05-13
IPC分类号： H01L21/20 , H01L21/36 , H01L21/336
CPC分类号： B82B1/005 , B82Y10/00 , H01L21/0237 , H01L21/02392 , H01L21/02521 , H01L21/02543 , H01L21/02546 , H01L21/02603 , H01L21/02639 , H01L21/02645 , H01L21/02653 , H01L27/10808 , H01L27/10873 , H01L29/0665 , H01L29/0669 , H01L29/0673 , H01L29/0676 , H01L29/732 , H01L29/7371 , H01L29/78642 , H01L29/78681 , H01L29/78696 , H01L33/02 , H01L33/18 , H01L33/20 , H01L33/24 , Y10S977/762 , Y10S977/938
摘要： The present invention relates to semiconductor devices comprising semiconductor nanoelements. In particular the invention relates to devices having a volume element having a larger diameter than the nanoelement arranged in epitaxial connection to the nanoelement. The volume element is being doped in order to provide a high charge carrier injection into the nanoelement and a low access resistance in an electrical connection. The nanoelement may be upstanding from a semiconductor substrate. A concentric layer of low resistivity material forms on the volume element forms a contact.
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