公开(公告)号：US07354623B2

公开(公告)日：2008-04-08

申请号：US10852381

申请日：2004-05-24

申请人： Ching-Ya Wang ,  Ping Chuang ,  Sunny Wu ,  Yu-Liang Lin ,  Hung-Jung Tu ,  Mei-Sheng Zhou ,  Henry Lo

发明人： Ching-Ya Wang ,  Ping Chuang ,  Sunny Wu ,  Yu-Liang Lin ,  Hung-Jung Tu ,  Mei-Sheng Zhou ,  Henry Lo

IPC分类号： B05D3/00 ,  B05D5/00

CPC分类号： H01L21/02203 ,  H01L21/02118 ,  H01L21/31058 ,  H01L21/312 ,  H01L21/31695 ,  Y10T428/249953 ,  Y10T428/249987

摘要： An organic layer, such as a porous low-K dielectric in an IC, contains pores open at its surface. To close the pores, the organic layer is contacted by a supercritical fluid that is a solvent for the layer. After a small amount of the surface and the wall of the open pores is solvated, a phase transition of the solvated organic material is effected at the surface to cover it with a dense, smooth, non-porous film that seals the open pores.

摘要翻译： 有机层，例如IC中的多孔低K电介质，其表面含有孔。 为了封闭孔，有机层与作为该层的溶剂的超临界流体接触。 在少量表面和开放孔的壁被溶剂化后，在表面进行溶剂化有机材料的相变以用密封，开孔的密实，光滑，无孔的膜覆盖。

公开(公告)号：US20050260402A1

公开(公告)日：2005-11-24

申请号：US10852381

申请日：2004-05-24

申请人： Ching-Ya Wang ,  Ping Chuang ,  Sunny Wu ,  Yu-Liang Lin ,  Hung-Jung Tu ,  Mei-Sheng Zhou ,  Henry Lo

发明人： Ching-Ya Wang ,  Ping Chuang ,  Sunny Wu ,  Yu-Liang Lin ,  Hung-Jung Tu ,  Mei-Sheng Zhou ,  Henry Lo

IPC分类号： B05D3/04 ,  B05D5/12 ,  B32B3/26 ,  C08K3/00 ,  H01L21/3105 ,  H01L21/312 ,  H01L21/316

CPC分类号： H01L21/02203 ,  H01L21/02118 ,  H01L21/31058 ,  H01L21/312 ,  H01L21/31695 ,  Y10T428/249953 ,  Y10T428/249987

摘要： An organic layer, such as a porous low-K dielectric in an IC, contains pores open at its surface. To close the pores, the organic layer is contacted by a supercritical fluid that is a solvent for the layer. After a small amount of the surface and the wall of the open pores is solvated, a phase transition of the solvated organic material is effected at the surface to cover it with a dense, smooth, non-porous film that seals the open pores.

摘要翻译： 有机层，例如IC中的多孔低K电介质，其表面含有孔。 为了封闭孔，有机层与作为该层的溶剂的超临界流体接触。 在少量表面和开放孔的壁被溶剂化后，在表面进行溶剂化有机材料的相变以用密封，开孔的密实，光滑，无孔的膜覆盖。

公开(公告)号：US20050158664A1

公开(公告)日：2005-07-21

申请号：US10760927

申请日：2004-01-20

申请人： Joshua Tseng ,  Ping Chuang ,  Hung-Jung Tu ,  Ching-Ya Wang ,  Yu-Liang Lin ,  Henry Lo ,  Mei-Sheng Zhou

发明人： Joshua Tseng ,  Ping Chuang ,  Hung-Jung Tu ,  Ching-Ya Wang ,  Yu-Liang Lin ,  Henry Lo ,  Mei-Sheng Zhou

IPC分类号： G03F7/00 ,  G03F7/42 ,  H01L21/00 ,  H01L21/311 ,  H01L21/768 ,  H01L23/52

CPC分类号： H01L21/76802 ,  G03F7/422 ,  G03F7/423 ,  G03F7/425 ,  G03F7/426 ,  H01L21/31116 ,  H01L21/31133 ,  H01L21/31144 ,  H01L21/76877

摘要： A method of integrating a post-etching cleaning process with deposition for a semiconductor device. A substrate having a damascene structure formed by etching a dielectric layer formed thereon using an overlying photoresist mask as an etching mask is provided. A cleaning process is performed by a supercritical fluid to remove the photoresist mask and post-etching by-products. An interconnect layer is formed in-situ in the damascene structure using the supercritical fluid as a reaction medium, wherein the cleaning process and the subsequent interconnect layer formation are performed in one process chamber or in different process chambers of a processing tool.

摘要翻译： 将后蚀刻清洗工艺与用于半导体器件的沉积集成的方法。 提供具有通过使用覆盖光致抗蚀剂掩模蚀刻形成在其上的介电层作为蚀刻掩模形成的镶嵌结构的基板。 通过超临界流体进行清洁处理以除去光致抗蚀剂掩模和后蚀刻副产物。 使用超临界流体作为反应介质，在镶嵌结构中原位形成互连层，其中清洁工艺和随后的互连层形成在一个处理室中或在处理工具的不同处理室中进行。

公开(公告)号：US06875285B2

公开(公告)日：2005-04-05

申请号：US10422339

申请日：2003-04-24

申请人： Ching-Ya Wang ,  Ping Chuang ,  Yu-Liang Lin ,  Mei-Sheng Zhou ,  Henry Lo

发明人： Ching-Ya Wang ,  Ping Chuang ,  Yu-Liang Lin ,  Mei-Sheng Zhou ,  Henry Lo

IPC分类号： B08B7/00 ,  H01L21/306 ,  H01L21/311 ,  C23G1/00

CPC分类号： H01L21/31116 ,  B08B7/0021 ,  H01L21/02052

摘要： System and method for reducing damage to a semiconductor substrate when using cleaning fluids at elevated pressures to clean the semiconductor substrates. A preferred embodiment comprises applying the cleaning fluid at a first pressure for a first time period, wherein the first pressure is relatively low, and then increasing the pressure of the cleaning fluid to a pressure level that can effectively clean the semiconductor substrate and maintaining the pressure level for a second time period. The application of the cleaning fluid at the relatively low initial pressure acts as a temporary filler and creates a buffer of the cleaning fluid on the semiconductor substrate and helps to dampen the impact of the subsequent high pressure application of the cleaning fluid on the semiconductor substrate.

摘要翻译： 当在高压下使用清洁流体以清洁半导体衬底时，减少对半导体衬底的损伤的系统和方法。 优选实施例包括在第一时间段内施加第一压力的清洁流体，其中第一压力相对较低，然后将清洁流体的压力提高到可以有效地清洁半导体衬底并保持压力的压力水平 水平第二次。 以相对较低的初始压力施加清洁流体作为临时填料并在半导体衬底上产生清洗液的缓冲液，并且有助于抑制随后的高压施加清洁流体对半导体衬底的冲击。

公开(公告)号：US07083495B2

公开(公告)日：2006-08-01

申请号：US10723236

申请日：2003-11-26

申请人： Chun Hsien Lin ,  Ai-Sen Liu ,  Sunny Wu ,  Yu-Liang Lin ,  Henry Lo ,  Mei-Sheng Zhou

发明人： Chun Hsien Lin ,  Ai-Sen Liu ,  Sunny Wu ,  Yu-Liang Lin ,  Henry Lo ,  Mei-Sheng Zhou

IPC分类号： B24B49/00 ,  B24B1/00

CPC分类号： B24B51/00 ,  B24B37/042 ,  G05B13/024 ,  H01L21/31053 ,  H01L21/3212

摘要： A wafer based APC method for controlling an oxide (Cu, or TaN) polish step is described and combines a feed forward model that compensates for incoming wafer variations with a feed backward model which compensates for CMP variations. The method is geared toward minimizing Rs 3σ variations. A Rs target value is inputted with metrology data from previous processes that affects the width and thickness of the copper layer. A copper thickness target and polish time for the first wafer is determined. Post CMP measurement data of the first wafer is used to modify the polish rate with a disturbance factor and an updated polish time is computed for subsequent wafers. The CMP recipe for each wafer is adjusted with metrology data and post CMP measurements. The APC method is successful in controlling copper Rs variations for the 90 nm technology node and is independent of copper pattern density.

摘要翻译： 描述了用于控制氧化物（Cu或TaN）抛光步骤的基于晶圆的APC方法，并且组合了用于补偿进入晶片变化的前馈模型与补偿CMP变化的馈送反向模型。 该方法面向最小化Rs 3sigma变化。 输入Rs目标值，其中来自先前工艺的测量数据影响铜层的宽度和厚度。 确定第一晶片的铜厚度目标和抛光时间。 第一晶片的CMP后测量数据被用于利用干扰因子修改抛光速率，并且为随后的晶片计算更新的抛光时间。 每个晶片的CMP配方用测量数据和后CMP测量进行调整。 APC方法成功地控制了90nm技术节点的铜Rs变化，并且与铜图案密度无关。

公开(公告)号：US20050282396A1

公开(公告)日：2005-12-22

申请号：US10872238

申请日：2004-06-18

申请人： Yu-Liang Lin ,  Henry Lo ,  Chung-Long Chang ,  Gorge Huang ,  Tony Lu ,  Gnesh Yeh ,  Candy Liang ,  Chun-Hsien Lin ,  Mei Sheng Zhou ,  Sunny Wu ,  Ai-Sen Liu ,  Cheng-Lin Huang ,  Li-Jui Chen ,  Shih Wang

发明人： Yu-Liang Lin ,  Henry Lo ,  Chung-Long Chang ,  Gorge Huang ,  Tony Lu ,  Gnesh Yeh ,  Candy Liang ,  Chun-Hsien Lin ,  Mei Sheng Zhou ,  Sunny Wu ,  Ai-Sen Liu ,  Cheng-Lin Huang ,  Li-Jui Chen ,  Shih Wang

IPC分类号： H01L21/00 ,  H01L21/302 ,  H01L21/311 ,  H01L21/336 ,  H01L21/461 ,  H01L23/544

CPC分类号： H01L23/544 ,  H01L21/31111 ,  H01L21/67282 ,  H01L2223/5442 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2223/5446 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method and apparatus for locally etching a substrate area the method including providing a substrate comprising a process surface; depositing a material layer over the process surface; and, applying a wet etchant to cover a targeted etching portion of the process surface while excluding an adjacent surrounding area to selectively etch the material layer overlying the targeted etching portion.

摘要翻译： 一种用于局部蚀刻衬底区域的方法和装置，该方法包括提供包含工艺表面的衬底; 在工艺表面上沉积材料层; 以及施加湿蚀刻剂以覆盖所述工艺表面的目标蚀刻部分，同时排除相邻的周围区域以选择性地蚀刻覆盖所述目标蚀刻部分的所述材料层。

公开(公告)号：US20050112997A1

公开(公告)日：2005-05-26

申请号：US10723236

申请日：2003-11-26

申请人： Chun Lin ,  Ai-Sen Liu ,  Sunny Wu ,  Yu-Liang Lin ,  Henry Lo ,  Mei-Sheng Zhou

发明人： Chun Lin ,  Ai-Sen Liu ,  Sunny Wu ,  Yu-Liang Lin ,  Henry Lo ,  Mei-Sheng Zhou

IPC分类号： B24B37/04 ,  B24B51/00 ,  G05B13/02 ,  H01L21/3105 ,  H01L21/321 ,  B24B49/00 ,  B24B1/00

CPC分类号： B24B51/00 ,  B24B37/042 ,  G05B13/024 ,  H01L21/31053 ,  H01L21/3212

摘要： A wafer based APC method for controlling an oxide (Cu, or TaN) polish step is described and combines a feed forward model that compensates for incoming wafer variations with a feed backward model which compensates for CMP variations. The method is geared toward minimizing Rs 3σ variations. A Rs target value is inputted with metrology data from previous processes that affects the width and thickness of the copper layer. A copper thickness target and polish time for the first wafer is determined. Post CMP measurement data of the first wafer is used to modify the polish rate with a disturbance factor and an updated polish time is computed for subsequent wafers. The CMP recipe for each wafer is adjusted with metrology data and post CMP measurements. The APC method is successful in controlling copper Rs variations for the 90 nm technology node and is independent of copper pattern density.

摘要翻译： 描述了用于控制氧化物（Cu或TaN）抛光步骤的基于晶圆的APC方法，并且组合了用于补偿进入晶片变化的前馈模型与补偿CMP变化的馈送反向模型。 该方法面向最小化Rs 3sigma变化。 输入Rs目标值，其中来自先前工艺的测量数据影响铜层的宽度和厚度。 确定第一晶片的铜厚度目标和抛光时间。 第一晶片的CMP后测量数据被用于利用干扰因子修改抛光速率，并且为随后的晶片计算更新的抛光时间。 每个晶片的CMP配方用测量数据和后CMP测量进行调整。 APC方法成功地控制了90nm技术节点的铜Rs变化，并且与铜图案密度无关。

公开(公告)号：US20050130449A1

公开(公告)日：2005-06-16

申请号：US10797318

申请日：2004-03-10

申请人： Ping Chuang ,  Yu-Liang Lin ,  Mei-Sheng Zhou

发明人： Ping Chuang ,  Yu-Liang Lin ,  Mei-Sheng Zhou

IPC分类号： B01J3/00 ,  H01L21/02 ,  H01L21/28 ,  H01L21/314 ,  H01L21/316 ,  H01L29/51 ,  H01L21/31 ,  H01L21/469

CPC分类号： H01L21/28202 ,  B01J3/008 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/3144 ,  H01L21/31675 ,  H01L21/31679 ,  H01L28/40 ,  H01L29/513 ,  H01L29/518 ,  Y02P20/544

摘要： A method of forming an oxide layer. A fluid, such as water, is heated and pressurized to supercritical or near-supercritical conditions and mixed with at least one oxidizing agent. The supercritical state mixture of the fluid and at least one oxidizing agent is then applied on the workpiece, forming an oxide layer on the workpiece. The at least one oxidizing agent may comprise nitrogen, and the oxide layer formed on the workpiece may comprise a nitrogen doped oxide.

摘要翻译： 一种形成氧化物层的方法。 将诸如水的流体加热并加压至超临界或近临界条件并与至少一种氧化剂混合。 然后将流体和至少一种氧化剂的超临界状态混合物施加到工件上，在工件上形成氧化物层。 至少一种氧化剂可以包含氮，并且在工件上形成的氧化物层可以包括氮掺杂的氧化物。

公开(公告)号：US20050106895A1

公开(公告)日：2005-05-19

申请号：US10715326

申请日：2003-11-17

申请人： Yu-Liang Lin ,  Ping Chuang ,  Mei-Sheng Zhou

发明人： Yu-Liang Lin ,  Ping Chuang ,  Mei-Sheng Zhou

IPC分类号： G06F17/00 ,  H01L21/31 ,  H01L21/316 ,  H01L21/469 ,  H01L21/76 ,  H01L21/768

CPC分类号： H01L21/02238 ,  H01L21/02255 ,  H01L21/31675 ,  H01L21/76801

摘要： The present disclosure provides for a method and system for fabricating an insulating layer on a substrate. The method and system provide a fluid to a substrate, wherein the fluid is provided in an aerosol form. The method and system also provides for generating a supercritical process environment proximate to the substrate. The method and system further provides a proximate supercritical process environment having a supercritical process temperature and a supercritical process pressure for altering the fluid, and placing the substrate in contact with the altered fluid, wherein the insulating layer is formed on the substrate by a reaction between the substrate and the fluid.

摘要翻译： 本公开提供了用于在基板上制造绝缘层的方法和系统。 该方法和系统向基材提供流体，其中流体以气溶胶形式提供。 该方法和系统还提供用于生成靠近基底的超临界过程环境。 该方法和系统还提供了一种具有超临界过程温度和超临界过程压力的邻近超临界过程环境，用于改变流体，并使衬底与改变的流体接触，其中绝缘层通过 基材和流体。

公开(公告)号：US07338909B2

公开(公告)日：2008-03-04

申请号：US10872238

申请日：2004-06-18

申请人： Yu-Liang Lin ,  Henry Lo ,  Chung-Long Chang ,  Gorge Huang ,  Tony Lu ,  Gnesh Yeh ,  Candy Liang ,  Chun-Hsien Lin ,  Mei Sheng Zhou ,  Sunny Su ,  Ai-Sen Liu ,  Cheng-Lin Huang ,  Li-Jui Chen ,  Shih Che Wang

发明人： Yu-Liang Lin ,  Henry Lo ,  Chung-Long Chang ,  Gorge Huang ,  Tony Lu ,  Gnesh Yeh ,  Candy Liang ,  Chun-Hsien Lin ,  Mei Sheng Zhou ,  Sunny Su ,  Ai-Sen Liu ,  Cheng-Lin Huang ,  Li-Jui Chen ,  Shih Che Wang

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L23/544 ,  H01L21/31111 ,  H01L21/67282 ,  H01L2223/5442 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2223/5446 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method and apparatus for locally etching a substrate area the method including providing a substrate comprising a process surface; depositing a material layer over the process surface; and, applying a wet etchant to cover a targeted etching portion of the process surface while excluding an adjacent surrounding area to selectively etch the material layer overlying the targeted etching portion.

摘要翻译： 一种用于局部蚀刻衬底区域的方法和装置，该方法包括提供包含工艺表面的衬底; 在工艺表面上沉积材料层; 以及施加湿蚀刻剂以覆盖所述工艺表面的目标蚀刻部分，同时排除相邻的周围区域以选择性地蚀刻覆盖所述目标蚀刻部分的所述材料层。