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101 条记录 (耗时 0.056 秒)

    Application of a supercritical CO2 system for curing low k dielectric materials
    3.
    发明授权
    Application of a supercritical CO2 system for curing low k dielectric materials 失效
    应用超临界CO2系统固化低k电介质材料

    公开(公告)号：US06875709B2

    公开(公告)日：2005-04-05

    申请号：US10383710

    申请日：2003-03-07

    申请人： Chun-Hsien Lin ,  Henry Lo ,  Anthony Liu ,  Yu-Liang Lin

    发明人： Chun-Hsien Lin ,  Henry Lo ,  Anthony Liu ,  Yu-Liang Lin

    IPC分类号： H01L21/3105 ,  H01L21/312 ,  H01L21/768 ,  H01L21/31 ,  H01L21/469

    CPC分类号： H01L21/02134 ,  H01L21/02118 ,  H01L21/02137 ,  H01L21/02203 ,  H01L21/02282 ,  H01L21/02343 ,  H01L21/31058 ,  H01L21/312 ,  H01L21/3124 ,  H01L21/76826 ,  H01L21/76829

    摘要： A method and apparatus for curing and modifying a low k dielectric layer in an interconnect structure is disclosed. A spin-on low k dielectric layer which includes an organic silsesquioxane, polyarylether, bisbenzocyclobuene, or SiLK is spin coated on a substrate. The substrate is placed in a process chamber in a supercritical CO2 system and is treated at a temperature between 30° C. and 150° C. and at a pressure from 70 to 700 atmospheres. A co-solvent such as CF3—X or F—X is added that selectively replaces C—CH3 bonds with C—CF3 or C—F bonds. Alternatively, H2O2 is employed as co-solvent to replace a halogen in a C—Z bond where Z=F, Cl, or Br with an hydroxyl group. Two co-solvents may be combined with CO2 for more flexibility. The cured dielectric layer has improved properties that include better adhesion, lower k value, increased hardness, and a higher elastic modulus.

    摘要翻译： 公开了一种用于固化和修饰互连结构中的低k电介质层的方法和装置。 将包含有机倍半硅氧烷，聚芳醚，双苯并环丁烯或SiLK的旋涂低k电介质层旋涂在基材上。 将基材置于超临界CO 2体系的处理室中，并在30℃至150℃的温度和70至700大气压的压力下进行处理。 加入共溶剂如CF 3 -X或F-X，其选择性地用C-CF 3或C-F键取代C-CH 3键。 或者，使用H 2 O 2作为助溶剂代替C-Z键中的卤素，其中Z = F，Cl或Br与羟基。 两种共溶剂可以与二氧化碳组合以获得更大的灵活性。 固化的介电层具有改进的性能，其包括更好的附着力，较低的k值，更高的硬度和更高的弹性模量。

    Device performance parmeter tuning method and system
    4.
    发明授权
    Device performance parmeter tuning method and system 有权
    设备性能参数调节方法和系统

    公开(公告)号：US08452439B2

    公开(公告)日：2013-05-28

    申请号：US13048282

    申请日：2011-03-15

    申请人： Sunny Wu ,  Chun-Hsien Lin ,  Kun-Ming Chen ,  Dung-Yian Hsieh ,  Hui-Ru Lin ,  Jo Fei Wang ,  Jong-I Mou ,  I-Ching Chu

    发明人： Sunny Wu ,  Chun-Hsien Lin ,  Kun-Ming Chen ,  Dung-Yian Hsieh ,  Hui-Ru Lin ,  Jo Fei Wang ,  Jong-I Mou ,  I-Ching Chu

    IPC分类号： G06F19/00 ,  G01N37/00 ,  G06F11/30 ,  G21C17/00

    CPC分类号： H01L22/20 ,  G01R31/2894 ,  H01L22/14

    摘要： A method comprises computing respective regression models for each of a plurality of failure bins based on a plurality of failures identified during wafer electrical tests. Each regression model outputs a wafer yield measure as a function of a plurality of device performance variables. For each failure bin, sensitivity of the wafer yield measure to each of the plurality of device performance variables is determined, and the device performance variables are ranked with respect to sensitivity of the wafer yield measure. A subset of the device performance variables which have highest rankings and which have less than a threshold correlation with each other are selected. The wafer yield measures for each failure bin corresponding to one of the selected subset of device performance variables are combined, to provide a combined wafer yield measure. At least one new process parameter value is selected to effect a change in the one device performance variable, based on the combined wafer yield measure. The at least one new process parameter value is to be used to process at least one additional wafer.

    摘要翻译： 一种方法包括基于在晶片电测试期间识别的多个故障来计算多个故障仓中的每一个的相应回归模型。 每个回归模型输出作为多个设备性能变量的函数的晶片产量测量。 对于每个故障仓，确定晶片产量测量对多个器件性能变量中的每一个的灵敏度，并且相对于晶片产量测量的灵敏度对器件性能变量进行排序。 选择具有最高排名并且彼此具有小于阈值相关性的设备性能变量的子集。 组合对应于所选择的设备性能变量子集之一的每个故障仓的晶片产量测量，以提供组合晶片产量测量。 选择至少一个新的过程参数值，以基于组合的晶片产量测量来实现一个器件性能变量的变化。 至少一个新的过程参数值将用于处理至少一个附加晶片。

    METHOD FOR A BIN RATIO FORECAST AT NEW TAPE OUT STAGE
    6.
    发明申请
    METHOD FOR A BIN RATIO FORECAST AT NEW TAPE OUT STAGE 有权
    新带前端的比率预测方法

    公开(公告)号：US20110010215A1

    公开(公告)日：2011-01-13

    申请号：US12499345

    申请日：2009-07-08

    申请人： Chun-Hsien Lin ,  Andy Tsen ,  Jui-Long Chen ,  Sunny Wu ,  Jong-I Mou ,  Chia-Hung Huang

    发明人： Chun-Hsien Lin ,  Andy Tsen ,  Jui-Long Chen ,  Sunny Wu ,  Jong-I Mou ,  Chia-Hung Huang

    IPC分类号： G06Q10/00 ,  G06F17/18

    CPC分类号： G06Q10/06 ,  G06Q30/0202

    摘要： A method for providing a bin ratio forecast at an early stage of integrated circuit device manufacturing processes is disclosed. The method comprises collecting historical data from one or more processed wafer lots; collect measurement data from one or more skew wafer lots; generating an estimated baseline distribution from the collected historical data and collected measurement data; generating an estimated performance distribution based on one or more specified parameters and the generated estimated baseline distribution; determining a bin ratio forecast by applying a bin definition and a yield degradation factor estimation to the generated estimated performance distribution; determining one or more production targets based on the bin ratio forecast; and processing one or more wafers based on the one or more determined production targets.

    摘要翻译： 公开了一种用于在集成电路器件制造工艺的早期阶段提供容量比预测的方法。 该方法包括从一个或多个处理的晶片批次收集历史数据; 从一个或多个偏斜晶片批量收集测量数据; 从收集的历史数据和收集的测量数据生成估计的基线分布; 基于一个或多个指定参数和所生成的估计基线分布产生估计的性能分布; 通过对所生成的估计性能分布应用仓定义和产量退化因子估计来确定仓比预测; 根据仓比预测确定一个或多个生产目标; 以及基于所述一个或多个确定的生产目标来处理一个或多个晶圆。

    METHOD AND APPARATUS TO ENABLE ACCURATE WAFER PREDICTION
    7.
    发明申请
    METHOD AND APPARATUS TO ENABLE ACCURATE WAFER PREDICTION 有权
    使用准确的波形预测的方法和装置

    公开(公告)号：US20060252348A1

    公开(公告)日：2006-11-09

    申请号：US11120896

    申请日：2005-05-03

    申请人： Chun-Hsien Lin ,  Ping-Hsu Chen ,  Sunny Wu ,  Francis Ko

    发明人： Chun-Hsien Lin ,  Ping-Hsu Chen ,  Sunny Wu ,  Francis Ko

    IPC分类号： B24B51/00 ,  B24B7/30 ,  B24B1/00

    CPC分类号： G05B23/0297

    摘要： A method for monitoring a processing tool in a semiconductor manufacturing facility includes selecting key hardware parameters for a virtual sensor system based on manufacturing data associated with a fabrication tool and collecting manufacturing data associated with the fabrication tool. The method further includes dynamically maintaining the virtual sensor system during the manufacture of a plurality of semiconductor products and using the virtual sensor system and the collected manufacturing data for predicting a condition of a semiconductor product after being processed by the fabrication tool.

    摘要翻译： 一种用于监测半导体制造设备中的处理工具的方法包括：基于与制造工具相关联的制造数据选择虚拟传感器系统的关键硬件参数并收集与制造工具相关联的制造数据。 该方法还包括在多个半导体产品的制造期间动态地维持虚拟传感器系统，并且使用虚拟传感器系统和所收集的制造数据来预测由制造工具处理之后的半导体产品的状况。

    Novel method and apparatus for integrating fault detection and real-time virtual metrology in an advanced process control framework
    8.
    发明申请
    Novel method and apparatus for integrating fault detection and real-time virtual metrology in an advanced process control framework 审中-公开
    用于在先进的过程控制框架中集成故障检测和实时虚拟计量的新方法和装置

    公开(公告)号：US20060129257A1

    公开(公告)日：2006-06-15

    申请号：US11011950

    申请日：2004-12-13

    申请人： Ping-Hsu Chen ,  Sunny Wu ,  Bing-Hung Chen ,  Francis Ko ,  Chun-Hsien Lin

    发明人： Ping-Hsu Chen ,  Sunny Wu ,  Bing-Hung Chen ,  Francis Ko ,  Chun-Hsien Lin

    IPC分类号： G06F19/00

    CPC分类号： G05B19/4188 ,  G05B19/4184 ,  G05B2219/31357 ,  G05B2219/45031 ,  Y02P90/14 ,  Y02P90/24

    摘要： A semiconductor manufacturing information framework to operate a processing tool includes a data acquisition system (DAS), a virtual metrology (VM) system, a fault detection and classification (FDC) system and an advanced process control (APC) system. The DAS is operable to receive data related to the processing of a workpiece by the processing tool or sensors coupled on tool. The VM system is operable to receive the data from the DAS and predict results of the workpiece processed by the processing tool or sensors. The VM system generates at least one first output indicative of the results. The FDC system is operable to receive the data and generate at least one second output indicative of an operating status of the processing tool. The APC system is operable to receive the at least one first or second outputs, and, in response, generate at least one third output to control the processing tool.

    摘要翻译： 用于操作处理工具的半导体制造信息框架包括数据采集系统（DAS），虚拟测量（VM）系统，故障检测和分类（FDC）系统以及高级过程控制（APC）系统）。 DAS可操作以通过耦合在工具上的处理工具或传感器接收与工件的处理有关的数据。 VM系统可操作以从DAS接收数据并预测由处理工具或传感器处理的工件的结果。 VM系统生成指示结果的至少一个第一输出。 FDC系统可操作以接收数据并产生指示处理工具的操作状态的至少一个第二输出。 APC系统可操作以接收至少一个第一或第二输出，并且作为响应，生成至少一个第三输出以控制处理工具。

    Method for a bin ratio forecast at new tape out stage
    9.
    发明授权
    Method for a bin ratio forecast at new tape out stage 有权
    新磁带出站时的比例预测方法

    公开(公告)号：US08082055B2

    公开(公告)日：2011-12-20

    申请号：US12499345

    申请日：2009-07-08

    申请人： Chun-Hsien Lin ,  Andy Tsen ,  Jui-Long Chen ,  Sunny Wu ,  Jong-I Mou ,  Chia-Hung Huang

    发明人： Chun-Hsien Lin ,  Andy Tsen ,  Jui-Long Chen ,  Sunny Wu ,  Jong-I Mou ,  Chia-Hung Huang

    IPC分类号： G06F19/00

    CPC分类号： G06Q10/06 ,  G06Q30/0202

    摘要： A method for providing a bin ratio forecast at an early stage of integrated circuit device manufacturing processes is disclosed. The method comprises collecting historical data from one or more processed wafer lots; collect measurement data from one or more skew wafer lots; generating an estimated baseline distribution from the collected historical data and collected measurement data; generating an estimated performance distribution based on one or more specified parameters and the generated estimated baseline distribution; determining a bin ratio forecast by applying a bin definition and a yield degradation factor estimation to the generated estimated performance distribution; determining one or more production targets based on the bin ratio forecast; and processing one or more wafers based on the one or more determined production targets.

    摘要翻译： 公开了一种用于在集成电路器件制造工艺的早期阶段提供容量比预测的方法。 该方法包括从一个或多个处理的晶片批次收集历史数据; 从一个或多个偏斜晶片批量收集测量数据; 从收集的历史数据和收集的测量数据生成估计的基线分布; 基于一个或多个指定参数和所生成的估计基线分布产生估计的性能分布; 通过对所生成的估计性能分布应用仓定义和产量退化因子估计来确定仓比预测; 根据仓比预测确定一个或多个生产目标; 以及基于所述一个或多个确定的生产目标来处理一个或多个晶圆。