摘要:
A method and apparatus for locally etching a substrate area the method including providing a substrate comprising a process surface; depositing a material layer over the process surface; and, applying a wet etchant to cover a targeted etching portion of the process surface while excluding an adjacent surrounding area to selectively etch the material layer overlying the targeted etching portion.
摘要:
A method and apparatus for locally etching a substrate area the method including providing a substrate comprising a process surface; depositing a material layer over the process surface; and, applying a wet etchant to cover a targeted etching portion of the process surface while excluding an adjacent surrounding area to selectively etch the material layer overlying the targeted etching portion.
摘要:
A wafer based APC method for controlling an oxide (Cu, or TaN) polish step is described and combines a feed forward model that compensates for incoming wafer variations with a feed backward model which compensates for CMP variations. The method is geared toward minimizing Rs 3σ variations. A Rs target value is inputted with metrology data from previous processes that affects the width and thickness of the copper layer. A copper thickness target and polish time for the first wafer is determined. Post CMP measurement data of the first wafer is used to modify the polish rate with a disturbance factor and an updated polish time is computed for subsequent wafers. The CMP recipe for each wafer is adjusted with metrology data and post CMP measurements. The APC method is successful in controlling copper Rs variations for the 90 nm technology node and is independent of copper pattern density.
摘要:
A wafer based APC method for controlling an oxide (Cu, or TaN) polish step is described and combines a feed forward model that compensates for incoming wafer variations with a feed backward model which compensates for CMP variations. The method is geared toward minimizing Rs 3σ variations. A Rs target value is inputted with metrology data from previous processes that affects the width and thickness of the copper layer. A copper thickness target and polish time for the first wafer is determined. Post CMP measurement data of the first wafer is used to modify the polish rate with a disturbance factor and an updated polish time is computed for subsequent wafers. The CMP recipe for each wafer is adjusted with metrology data and post CMP measurements. The APC method is successful in controlling copper Rs variations for the 90 nm technology node and is independent of copper pattern density.
摘要:
An organic layer, such as a porous low-K dielectric in an IC, contains pores open at its surface. To close the pores, the organic layer is contacted by a supercritical fluid that is a solvent for the layer. After a small amount of the surface and the wall of the open pores is solvated, a phase transition of the solvated organic material is effected at the surface to cover it with a dense, smooth, non-porous film that seals the open pores.
摘要:
An organic layer, such as a porous low-K dielectric in an IC, contains pores open at its surface. To close the pores, the organic layer is contacted by a supercritical fluid that is a solvent for the layer. After a small amount of the surface and the wall of the open pores is solvated, a phase transition of the solvated organic material is effected at the surface to cover it with a dense, smooth, non-porous film that seals the open pores.
摘要:
A method and system for monitoring the quality of a slurry utilized in a chemical mechanical polishing operation. A slurry is generally delivered through a tubular path during a chemical mechanical polishing operation. A laser light is generally transmitted from a laser light source, such that the laser light comes into contact with the slurry during the chemical mechanical polishing operation. The laser light can then be detected, after the laser light comes into contact with the slurry to thereby monitor the quality of the slurry utilized during the chemical mechanical polishing operation. The laser light that comes into contact with the slurry can be also be utilized to monitor a mixing ratio associated with the slurry.
摘要:
A method and system for monitoring the quality of a slurry utilized in a chemical mechanical polishing operation. A slurry is generally delivered through a tubular path during a chemical mechanical polishing operation. A laser light is generally transmitted from a laser light source, such that the laser light comes into contact with the slurry during the chemical mechanical polishing operation. The laser light can then be detected, after the laser light comes into contact with the slurry to thereby monitor the quality of the slurry utilized during the chemical mechanical polishing operation. The laser light that comes into contact with the slurry can be also be utilized to monitor a mixing ratio associated with the slurry.
摘要:
System and method for reducing damage to a semiconductor substrate when using cleaning fluids at elevated pressures to clean the semiconductor substrates. A preferred embodiment comprises applying the cleaning fluid at a first pressure for a first time period, wherein the first pressure is relatively low, and then increasing the pressure of the cleaning fluid to a pressure level that can effectively clean the semiconductor substrate and maintaining the pressure level for a second time period. The application of the cleaning fluid at the relatively low initial pressure acts as a temporary filler and creates a buffer of the cleaning fluid on the semiconductor substrate and helps to dampen the impact of the subsequent high pressure application of the cleaning fluid on the semiconductor substrate.
摘要:
A method of integrating a post-etching cleaning process with deposition for a semiconductor device. A substrate having a damascene structure formed by etching a dielectric layer formed thereon using an overlying photoresist mask as an etching mask is provided. A cleaning process is performed by a supercritical fluid to remove the photoresist mask and post-etching by-products. An interconnect layer is formed in-situ in the damascene structure using the supercritical fluid as a reaction medium, wherein the cleaning process and the subsequent interconnect layer formation are performed in one process chamber or in different process chambers of a processing tool.