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1.发明授权Fabrication of electronic and photonic systems on flexible substrates by layer transfer method 有权通过层转移法在柔性基板上制作电子和光子系统公开(公告)号：US08232182B2
公开(公告)日：2012-07-31
申请号：US11221325
申请日：2005-09-07
IPC分类号： H01L21/46
CPC分类号： H01L21/2007 , H01L41/313 , H01L51/0013
摘要： A transfer layer includes a transparent substrate. A buffer layer is formed on the transparent substrate that comprises PbO, GaN, PbTiO3, La0.5Sr0.5CoO3 (LSCO), or LaxPb1-xCoO3 (LPCO) so that separation between the buffer layer and the transparent substrate occurs at substantially high temperatures.
摘要翻译： 转印层包括透明基材。 在包含PbO，GaN，PbTiO3，La0.5Sr0.5CoO3（LSCO）或LaxPb1-xCoO3（LPCO）的透明基板上形成缓冲层，使得缓冲层和透明基板之间的分离在基本高温下发生。
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2.发明授权Fabrication of electronic and photonic systems on flexible substrates by layer transfer method 有权通过层转移法在柔性基板上制作电子和光子系统公开(公告)号：US09012992B2
公开(公告)日：2015-04-21
申请号：US13534094
申请日：2012-06-27
IPC分类号： H01L21/331 , H01L21/20 , H01L51/00 , H01L41/313
CPC分类号： H01L21/2007 , H01L41/313 , H01L51/0013
摘要： A transfer layer includes a transparent substrate. A buffer layer is formed on the transparent substrate that comprises PbO, GaN, PbTiO3, La0.5Sr0.5CoO3 (LSCO), or LaxPb1-xCoO3 (LPCO) so that separation between the buffer layer and the transparent substrate occurs at substantially high temperatures.
摘要翻译： 转印层包括透明基材。 在包含PbO，GaN，PbTiO3，La0.5Sr0.5CoO3（LSCO）或LaxPb1-xCoO3（LPCO）的透明基板上形成缓冲层，使得缓冲层和透明基板之间的分离在基本高温下发生。
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3.发明申请FABRICATION OF ELECTRONIC AND PHOTONIC SYSTEMS ON FLEXIBLE SUBSTRATES BY LAYER TRANSFER METHOD 审中-公开通过层转移方法制造柔性基板上的电子和光电系统公开(公告)号：US20120273784A1
公开(公告)日：2012-11-01
申请号：US13534094
申请日：2012-06-27
IPC分类号： H01L29/16
CPC分类号： H01L21/2007 , H01L41/313 , H01L51/0013
摘要： A transfer layer includes a transparent substrate. A buffer layer is formed on the transparent substrate that comprises PbO, GaN, PbTiO3, La0.5Sr0.5CoO3 (LSCO), or LaxPb1-xCoO3 (LPCO) so that separation between the buffer layer and the transparent substrate occurs at substantially high temperatures.
摘要翻译： 转印层包括透明基材。 在包含PbO，GaN，PbTiO3，La0.5Sr0.5CoO3（LSCO）或LaxPb1-xCoO3（LPCO）的透明基板上形成缓冲层，使得缓冲层和透明基板之间的分离在基本高温下发生。
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公开(公告)号：US09525071B2
公开(公告)日：2016-12-20
申请号：US14380270
申请日：2013-02-22
IPC分类号： H01L29/04 , H01L29/10 , H01L29/76 , H01L29/40 , H01L29/786 , H01L51/10 , B81B3/00 , H01L29/49 , H01L29/51 , H01L51/00 , H01L51/05
CPC分类号： H01L29/78663 , B81B3/0086 , B81B2207/015 , H01L29/4908 , H01L29/51 , H01L51/0054 , H01L51/0055 , H01L51/0097 , H01L51/0533 , H01L51/10 , Y02E10/549
摘要： A flexible high-voltage thin-film transistor includes a gate electrode, a source electrode, a drain electrode, a dielectric layer, and a flexible semiconductor layer. The flexible semiconductor layer serves as a channel for the transistor and is in electrical communication with the source electrode and the drain electrode. The drain electrode is laterally offset from the gate electrode. The dielectric layers is configured and arranged with respect to other elements of the transistor such that the transistor is stably operable to facilitate switching of relatively high drain voltages using relatively small controlling gate voltages.
摘要翻译： 柔性高压薄膜晶体管包括栅电极，源电极，漏电极，电介质层和柔性半导体层。 柔性半导体层用作晶体管的沟道，并与源电极和漏电极电连通。 漏电极与栅电极横向偏移。 电介质层相对于晶体管的其他元件配置和布置，使得晶体管稳定可操作以便利用相对小的控制栅极电压来切换相对高的漏极电压。
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5.发明申请THICK POROUS ANODIC ALUMINA FILMS AND NANOWIRE ARRAYS GROWN ON A SOLID SUBSTRATE 有权厚多孔阳极氧化铝膜和固体基底上的纳米阵列公开(公告)号：US20080210662A1
公开(公告)日：2008-09-04
申请号：US11832309
申请日：2007-08-01
CPC分类号： C23C14/024 , B82Y30/00 , C23C14/16 , C23C14/5873 , C30B7/00 , C30B7/005 , C30B29/605 , H01L35/32 , H01L35/34 , Y10T156/10 , Y10T428/12486 , Y10T428/1259 , Y10T428/24273 , Y10T428/24322 , Y10T428/24917
摘要： The presently disclosed invention provides for the fabrication of porous anodic alumina (PAA) films on a wide variety of substrates. The substrate comprises a wafer layer and may further include an adhesion layer deposited on the wafer layer. An anodic alumina template is formed on the substrate. When a rigid substrate such as Si is used, the resulting anodic alumina film is more tractable, easily grown on extensive areas in a uniform manner, and manipulated without danger of cracking. The substrate can be manipulated to obtain free-standing alumina templates of high optical quality and substantially flat surfaces. PAA films can also be grown this way on patterned and non-planar surfaces. Furthermore, under certain conditions the resulting PAA is missing the barrier layer (partially or completely) and the bottom of the pores can be readily accessed electrically. The resultant film can be used as a template for forming an array of nanowires wherein the nanowires are deposited electrochemically into the pores of the template. By patterning the electrically conducting adhesion layer, pores in different areas of the template can be addressed independently, and can be filled electrochemically by different materials. Single-stage and multi-stage nanowire-based thermoelectric devices, consisting of both n-type and p-type nanowires, can be assembled on a silicon substrate by this method.
摘要翻译： 目前公开的发明提供了在各种基底上制造多孔阳极氧化铝（PAA）膜。 衬底包括晶片层，并且还可以包括沉积在晶片层上的粘附层。 在基板上形成阳极氧化铝模板。 当使用诸如Si的刚性基材时，所得的阳极氧化铝膜更易于处理，容易在均匀的方式在广泛的区域生长，并且操作而没有开裂的危险。 可以操作基底以获得高光学质量和基本平坦表面的独立氧化铝模板。 PAA膜也可以在图案和非平面表面上生长。 此外，在某些条件下，所得PAA缺少阻挡层（部分或完全），并且孔的底部可以容易地电接触。 所得膜可以用作形成纳米线阵列的模板，其中纳米线电化学沉积到模板的孔中。 通过图案化导电粘合层，可以独立地解决模板的不同区域中的孔，并且可以通过不同的材料电化学填充。 通过这种方法，可以在硅衬底上组装由n型和p型纳米线组成的单级和多级纳米线型热电装置。
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6.发明授权Comb toothed field emitter structure having resistive and capacitive coupled input 失效梳齿形场发射器结构具有电阻和电容耦合输入
公开(公告)号：US5466982A
公开(公告)日：1995-11-14
申请号：US101123
申请日：1993-10-18
CPC分类号： H01J1/3042 , H01J31/127 , H01J2201/319
摘要： A field emitter structure with emitter edge comprising of individual comb elements. A resistive film is inserted between the lead-in conductor and the emitter edge and a conductive film is electrically attached to the conductor and capacitively coupled to the emitter.
摘要翻译： 具有发射极边缘的场发射体结构，其包括各个梳状元件。 电阻膜插入在引入导体和发射极边缘之间，导电膜电连接到导体并电容耦合到发射极。
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公开(公告)号：US09388916B2
公开(公告)日：2016-07-12
申请号：US13307665
申请日：2011-11-30
申请人： Akintunde I. Akinwande , Carol Livermore-Clifford , Martin A. Schmidt , Aalap S. Dighe , Luis Fernando Velásquez-García
发明人： Akintunde I. Akinwande , Carol Livermore-Clifford , Martin A. Schmidt , Aalap S. Dighe , Luis Fernando Velásquez-García
CPC分类号： F16K99/003 , F16K99/0044 , Y10T29/49412 , Y10T137/1812
摘要： A microvalve device is provided that includes a through via located in an island structure supported on a thermally-insulating membrane supported by a frame. The through via is surrounded by a meltable sealing material. A heater element is positioned on the island structure for sealing the material over the through via by heating the sealing material.
摘要翻译： 提供了一种微型阀装置，其包括位于由框架支撑的绝热膜上支撑的岛状结构中的通孔。 通孔由可熔融的密封材料包围。 加热器元件位于岛状结构上，用于通过加热密封材料将材料密封在通孔上。
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8.发明申请PERFORMANCE ENHANCEMENT THROUGH USE OF HIGHER STABILITY REGIONS AND SIGNAL PROCESSING IN NON-IDEAL QUADRUPOLE MASS FILTERS 有权通过使用高可靠性区域和信号处理在非理想的四重质量过滤器中的性能提升公开(公告)号：US20090026363A1
公开(公告)日：2009-01-29
申请号：US12168407
申请日：2008-07-07
IPC分类号： B01D59/44
CPC分类号： H01J49/4215 , H01J49/0018 , H01J49/4275
摘要： A quadrupole mass filter (QMF) is provided. The QMF includes a plurality of rectangular shaped electrodes aligned in a symmetric manner to generate a quadrupole field. An aperture region is positioned in a center region parallel to and adjacent to each of the rectangular shaped electrodes. An incoming ion stream enters the aperture region so as to be controlled by the quadrupole field. A plurality of voltage sources provide a r.f. and d.c. signal to the electrodes for generating the quadrupole field. An auxiliary voltage source applies an auxiliary drive signal to the r.f. and d.c. signal to create new stability boundaries within the standard Mathieu stability regions with high-resolution around operating conditions where there are approximately no higher-order resonances.
摘要翻译： 提供四极质量过滤器（QMF）。 QMF包括以对称方式对准的多个矩形电极以产生四极场。 开口区域位于与每个矩形电极平行并相邻的中心区域中。 进入的离子流进入孔径区域，以便由四极场控制。 多个电压源提供一个r.f. 和d.c. 信号到电极以产生四极场。 辅助电压源向r.f施加辅助驱动信号。 和d.c. 信号，以在具有高分辨率的标准Mathieu稳定区域内创建新的稳定性边界，其周围几乎没有高阶谐振。
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9.发明授权Thick porous anodic alumina films and nanowire arrays grown on a solid substrate 失效在固体基底上生长的厚多孔阳极氧化铝膜和纳米线阵列公开(公告)号：US07267859B1
公开(公告)日：2007-09-11
申请号：US10303653
申请日：2002-11-25
CPC分类号： C23C14/024 , B82Y30/00 , C23C14/16 , C23C14/5873 , C30B7/00 , C30B7/005 , C30B29/605 , H01L35/32 , H01L35/34 , Y10T156/10 , Y10T428/12486 , Y10T428/1259 , Y10T428/24273 , Y10T428/24322 , Y10T428/24917
摘要： The presently disclosed invention provides for the fabrication of porous anodic alumina (PAA) films on a wide variety of substrates. The substrate comprises a wafer layer and may further include an adhesion layer deposited on the wafer layer. An anodic alumina template is formed on the substrate. When a rigid substrate such as Si is used, the resulting anodic alumina film is more tractable, easily grown on extensive areas in a uniform manner, and manipulated without danger of cracking. The substrate can be manipulated to obtain free-standing alumina templates of high optical quality and substantially flat surfaces PAA films can also be grown this way on patterned and non-planar surfaces. Furthermore, under certain conditions the resulting PAA is missing the barrier layer (partially or completely) and the bottom of the pores can be readily accessed electrically. The resultant film can be used as a template for forming an array of nanowires wherein the nanowires are deposited electrochemically into the pores of the template. By patterning the electrically conducting adhesion layer, pores in different areas of the template can be addressed independently, and can be filled electrochemically by different materials. Single-stage and multi-stage nanowire-based thermoelectric devices, consisting of both n-type and p-type nanowires, can be assembled on a silicon substrate by this method.
摘要翻译： 目前公开的发明提供了在各种基底上制造多孔阳极氧化铝（PAA）膜。 衬底包括晶片层，并且还可以包括沉积在晶片层上的粘附层。 在基板上形成阳极氧化铝模板。 当使用诸如Si的刚性基材时，所得的阳极氧化铝膜更易于处理，容易在均匀的方式在广泛的区域生长，并且操作而没有开裂的危险。 可以操作基底以获得高光学质量的自立式氧化铝模板和基本平坦的表面。也可以在图案化和非平面表面上生长PAA膜。 此外，在某些条件下，所得PAA缺少阻挡层（部分或完全），并且孔的底部可以容易地电接触。 所得膜可以用作形成纳米线阵列的模板，其中纳米线电化学沉积到模板的孔中。 通过图案化导电粘合层，可以独立地解决模板的不同区域中的孔，并且可以通过不同的材料电化学填充。 通过这种方法，可以在硅衬底上组装由n型和p型纳米线组成的单级和多级纳米线型热电装置。
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公开(公告)号：US5295395A
公开(公告)日：1994-03-22
申请号：US652148
申请日：1991-02-07
申请人： G. Benjamin Hocker , David W. Burns , Akintunde I. Akinwande , Robert D. Horning , Amir R. Mirza , Thomas G. Stratton , Deidrich J. Saathoff , James K. Carney , Scott A. McPherson
发明人： G. Benjamin Hocker , David W. Burns , Akintunde I. Akinwande , Robert D. Horning , Amir R. Mirza , Thomas G. Stratton , Deidrich J. Saathoff , James K. Carney , Scott A. McPherson
IPC分类号： G01L9/04 , B81C1/00 , G01L9/00 , G01L9/12 , H01L21/02 , H01L21/20 , H01L21/306 , H01L29/84 , G01L13/02
CPC分类号： B81C1/00182 , G01L9/0042 , G01L9/0073 , H01L21/2007 , B81B2201/0292 , B81B2203/0127
摘要： The formation of diaphragms by silicon wafer bonding provides for a structure having at least two such diaphragms with cavities in the wafers to which the diaphragm layer is bonded. Passageways through the wafers provide for communication of a fluid to the diaphragms. In some locations less than all of a plurality of diaphragms may be bonded to only one wafter having a cavity adjacent the diaphragm.
摘要翻译： 通过硅晶片接合形成隔膜提供了具有至少两个这样的隔膜的结构，其中隔膜层与晶片层结合在晶片上。 通过晶片的通道提供流体到膜片的连通。 在一些位置中，少于所有多个隔膜的位置可以仅结合到具有与隔膜相邻的空腔的一个凹部。
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