公开(公告)号：US5298793A

公开(公告)日：1994-03-29

申请号：US929472

申请日：1992-08-13

申请人： Jutaro Kotani ,  Masahiro Ihara ,  Hideaki Nakura ,  Masami Yokozawa

发明人： Jutaro Kotani ,  Masahiro Ihara ,  Hideaki Nakura ,  Masami Yokozawa

IPC分类号： H01L21/28 ,  H01L21/607 ,  H01L23/485 ,  H01L23/532 ,  H01L29/43 ,  H01L23/48 ,  H01L29/44

CPC分类号： H01L24/05 ,  H01L23/532 ,  H01L24/48 ,  H01L24/85 ,  H01L2224/04042 ,  H01L2224/05001 ,  H01L2224/05082 ,  H01L2224/05124 ,  H01L2224/05155 ,  H01L2224/05624 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48463 ,  H01L2224/48624 ,  H01L2224/48724 ,  H01L2224/48824 ,  H01L2224/85043 ,  H01L2224/85201 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L24/45 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/14 ,  H01L2924/30105

摘要： There is disclosed a semiconductor device having an electrode for wire bonding, comprising a first aluminum layer, a nickel-aluminum alloy layer, and a second aluminum layer. The electrode is suitable for bonding with copper wire, since the electrode withstands a wide range of bonding conditions--mechanical pressure, ultrasonic wave power and such, and permits a reliable electrical connection to be maintained.

摘要翻译： 公开了一种具有用于引线接合的电极的半导体器件，包括第一铝层，镍 - 铝合金层和第二铝层。 该电极适用于与铜线接合，因为电极可承受大范围的接合条件 - 机械压力，超声波功率等，并且可以保持可靠的电连接。

公开(公告)号：US5461252A

公开(公告)日：1995-10-24

申请号：US391833

申请日：1995-02-17

申请人： Hideaki Nakura ,  Masami Yokozawa ,  Kazuhiko Tsubaki ,  Masasuke Yoshimura

发明人： Hideaki Nakura ,  Masami Yokozawa ,  Kazuhiko Tsubaki ,  Masasuke Yoshimura

IPC分类号： H01L27/02 ,  H01L29/72 ,  H01L27/04

CPC分类号： H01L27/0248 ,  H01L27/0211

摘要： A semiconductor device includes on a semiconductor substrate an output transistor which is composed of a collector region, a first base region and a first emitter region, and a temperature detection transistor composed of the collector region, a second base region and a second emitter region. The output transistor is provided at a center of the collector region of the semiconductor substrate. A vacant region is formed on a center of the output transistor, and the temperature detection transistor is provided in the vacant region.

摘要翻译： 半导体器件在半导体基板上包括由集电极区域，第一基极区域和第一发射极区域构成的输出晶体管，以及由集电极区域，第二基极区域和第二发射极区域构成的温度检测晶体管。 输出晶体管设置在半导体衬底的集电极区域的中心。 在输出晶体管的中心形成有空位区域，在空置区域设置温度检测用晶体管。

公开(公告)号：US5629551A

公开(公告)日：1997-05-13

申请号：US503688

申请日：1995-07-18

申请人： Hideaki Nakura ,  Masami Yokozawa ,  Kazuhiko Tsubaki ,  Masasuke Yoshimura

发明人： Hideaki Nakura ,  Masami Yokozawa ,  Kazuhiko Tsubaki ,  Masasuke Yoshimura

IPC分类号： H01L27/02 ,  H01L29/47 ,  H01L27/095 ,  H01L29/812

CPC分类号： H01L27/0248 ,  H01L27/0211

摘要： A semiconductor device includes on a semiconductor substrate an output transistor which is composed of a collector region, a first base region and a first emitter region, and a temperature detection transistor composed of the collector region, a second base region and a second emitter region. The output transistor is provided at a center of the collector region of the semiconductor substrate. A vacant region is formed on a center of the output transistor, and the temperature detection transistor is provided in the vacant region.

摘要翻译： 半导体器件在半导体基板上包括由集电极区域，第一基极区域和第一发射极区域构成的输出晶体管，以及由集电极区域，第二基极区域和第二发射极区域构成的温度检测晶体管。 输出晶体管设置在半导体衬底的集电极区域的中心。 在输出晶体管的中心形成有空位区域，在空置区域设置温度检测用晶体管。

公开(公告)号：US4589010A

公开(公告)日：1986-05-13

申请号：US581251

申请日：1984-02-17

申请人： Kenichi Tateno ,  Masami Yokozawa ,  Hiroyuki Fujii ,  Mikio Nishikawa ,  Michio Katoh ,  Fujio Wada

发明人： Kenichi Tateno ,  Masami Yokozawa ,  Hiroyuki Fujii ,  Mikio Nishikawa ,  Michio Katoh ,  Fujio Wada

IPC分类号： H01L21/56 ,  H01L23/31 ,  H01L23/495 ,  H01L23/30 ,  H01L23/10 ,  H01L23/12

CPC分类号： H01L23/3107 ,  H01L21/565 ,  H01L23/3135 ,  H01L23/49562 ,  H01L24/97 ,  H01L2224/05554 ,  H01L2224/451 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/8592 ,  H01L2224/97 ,  H01L24/45 ,  H01L24/48 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01082 ,  H01L2924/181 ,  Y10T29/49121 ,  Y10T428/12194

摘要： A method for manufacturing a plastic encapsulated semiconductor device is provided which comprises the steps of: clamping by upper and lower molds at least external leads and strips of a semiconductor device assembly formed using a lead frame which has a first connecting band connected to the external leads extending from one side of a substrate support further used as a heat sink, and a second connecting band connected to the strips having portions of small cross-sectional areas and of a predetermined length and extending from the other side of the substrate support, the cross sections being perpendicular to an extending direction of the strips, so that the substrate support may float in a cavity formed by the upper and lower molds and parts of the portions of small cross-sectional areas may be disposed in the cavity and the remaining parts thereof may be disposed between the upper and lower molds; injecting a plastic into the cavity; and cutting the portions of small cross-sectional areas of the strips which extend outside a plastic encapsulating housing along the end face of the plastic encapsulating housing and cutting a connecting portion between the external leads and the first connecting band. Also provided is a lead frame having the strips as decribed above. A plastic layer of desired thickness can be formed on the rear surface of the substrate support. Cutting of the strips from the plastic encapsulating housing is easy and reliable.

公开(公告)号：US06215174B1

公开(公告)日：2001-04-10

申请号：US09009232

申请日：1998-01-20

申请人： Kouji Takada ,  Masami Yokozawa ,  Hiroyoshi Yoshida ,  Shigeki Sakaguchi

发明人： Kouji Takada ,  Masami Yokozawa ,  Hiroyoshi Yoshida ,  Shigeki Sakaguchi

IPC分类号： H01L23495

CPC分类号： H01L21/565 ,  H01L23/49541 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/451 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/49171 ,  H01L2924/00014 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00015 ,  H01L2224/05599 ,  H01L2924/00012

摘要： A lead frame used for a resin-sealed semiconductor device includes a die-mount portion on which a semiconductor chip rests; and a plurality of leads arranged along a common portion of the lead frame. The plurality of leads include at least one adjusting lead, and the adjusting lead has a length that is less than the others of the plurality of leads such that a tip of the adjusting lead is sufficiently proximate to an outer peripheral surface of a resin-seal body to prevent resin flash during a formation of the semiconductor device and to allow the adjusting lead to be removed after the resin-seal body is formed over a portion of the lead frame.

摘要翻译： 用于树脂密封半导体器件的引线框架包括半导体芯片所在的管芯安装部分; 以及沿引线框架的公共部分布置的多个引线。 多个引线包括至少一个调节引线，并且调节引线的长度小于多个引线中的其他引线的长度，使得调节引线的尖端足够靠近树脂密封件的外周表面 在树脂密封体形成在引线框架的一部分上之后，防止树脂在半导体器件形成过程中发生闪光并允许调整引线被去除。

公开(公告)号：US06187114B1

公开(公告)日：2001-02-13

申请号：US08950284

申请日：1997-10-14

申请人： Toshinori Ogashiwa ,  Takatoshi Arikawa ,  Masami Yokozawa ,  Kazuhiro Aoi ,  Yoshiharu Sawada

发明人： Toshinori Ogashiwa ,  Takatoshi Arikawa ,  Masami Yokozawa ,  Kazuhiro Aoi ,  Yoshiharu Sawada

IPC分类号： B22K3526

CPC分类号： H01L24/48 ,  B23K35/262 ,  B23K2101/42 ,  C22C13/00 ,  H01L23/488 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L2224/04026 ,  H01L2224/05073 ,  H01L2224/05624 ,  H01L2224/29 ,  H01L2224/29101 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/29211 ,  H01L2224/29347 ,  H01L2224/29355 ,  H01L2224/29386 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/48624 ,  H01L2224/48655 ,  H01L2224/48699 ,  H01L2224/48724 ,  H01L2224/48755 ,  H01L2224/73265 ,  H01L2224/83455 ,  H01L2224/85455 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01083 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/19043 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/01082 ,  H01L2924/01026 ,  H01L2924/01046 ,  H01L2924/01049 ,  H01L2924/3512 ,  H01L2924/053 ,  H01L2924/045 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299 ,  H01L2224/2929 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/2075 ,  H01L2924/20754

摘要： This invention provides a lead-free high temperature solder material comprising 0.005-3.0 wt % of palladium (Pd) and 97.0-99.995 wt % of tin (Sn) whose liquidus temperature is 200-350° C. The solder material is environmentally-friendly, improved in thermal fatigue property, and it can improve the reliability of electronic apparatuses. A predetermined amount of Sn material and Pd is mixed, vacuum-melted and cast to prepare an ingot. The ingot is rolled to be a tape that is later pressed to obtain a solder pellet. In a preferable composition, at least 95 wt % of Sn and 0.005-3.0 wt 5 of Pd are contained, and 0.1-5.0 wt % of metallic (e.g. Cu, Ni) or alloy particles are added. The average particle diameter is about 40 &mgr;m. A substrate and an IC chip (electronic element) are die-bonded substantially in parallel by a solder material provided between an Ni plating on the lower side of an IC chip (semiconductor) and an Ni plating on a die.

摘要翻译： 本发明提供一种无铅高温焊料材料，其包含0.005-3.0重量％的钯（Pd）和97.0-99.995重量％的液相线温度为200-350℃的锡（Sn）。焊料材料是环境友好的 ，提高了热疲劳性能，可提高电子设备的可靠性。 将预定量的Sn材料和Pd混合，真空熔融并铸造以制备锭。 将锭轧制成随后压制以获得焊料丸的带。 在优选的组成中，含有至少95重量％的Sn和0.005-3.0重量％的Pd，并且加入0.1-5.0重量％的金属（例如Cu，Ni）或合金颗粒。 平均粒径约40μm。 基板和IC芯片（电子元件）通过设置在IC芯片（半导体）的下侧的Ni镀层和模具上的Ni镀层之间的焊料材料大致平行地进行芯片焊接。

公开(公告)号：US4482915A

公开(公告)日：1984-11-13

申请号：US395799

申请日：1982-07-06

申请人： Mikio Nishikawa ,  Hiroyuki Fujii ,  Kenichi Tateno ,  Masami Yokozawa

发明人： Mikio Nishikawa ,  Hiroyuki Fujii ,  Kenichi Tateno ,  Masami Yokozawa

IPC分类号： H01L23/31 ,  H01L23/495 ,  H01L23/30 ,  H01L23/32 ,  H01L21/60

CPC分类号： H01L23/3107 ,  H01L23/3135 ,  H01L23/49562 ,  H01L24/48 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/8592 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01033 ,  H01L2924/01082 ,  H01L2924/181

摘要： The invention provides a lead frame for a plastic encapsulated semiconductor device wherein one of the external leads connected to a first connecting band extends from one edge of a substrate support which supports a semiconductor substrate and also serves as a heat sink, two strips are connected to a second connecting band from the other edge of the substrate support, a notch is formed between the two strips of the second connecting band to allow proper positioning of the lead frame and to decrease thermal deformation during plastic encapsulation. Further, another lead frame is provided wherein a through hole is formed extending within the substrate support in the direction of thickness thereof in order to allow uniform flow of the resin and to form a thin resin layer on the rear surface of the substrate support.

摘要翻译： 本发明提供了一种用于塑料封装的半导体器件的引线框架，其中连接到第一连接带的外部引线之一从支撑半导体衬底的基板支撑件的一个边缘延伸，并且还用作散热器，两个条带连接到 来自基板支撑件的另一边缘的第二连接带，在第二连接带的两个条带之间形成切口，以允许引线框架的适当定位并且在塑料封装期间减小热变形。 此外，提供另一个引线框架，其中形成在基板支撑件的厚度方向上延伸的通孔，以允许树脂均匀流动并在基板支撑件的后表面上形成薄树脂层。

公开(公告)号：US4451973A

公开(公告)日：1984-06-05

申请号：US367809

申请日：1982-04-13

申请人： Kenichi Tateno ,  Masami Yokozawa ,  Hiroyuki Fujii ,  Mikio Nishikawa ,  Michio Katoh ,  Fujio Wada

发明人： Kenichi Tateno ,  Masami Yokozawa ,  Hiroyuki Fujii ,  Mikio Nishikawa ,  Michio Katoh ,  Fujio Wada

IPC分类号： H01L21/56 ,  H01L23/31 ,  H01L23/495 ,  H01L21/58

CPC分类号： H01L23/3107 ,  H01L21/565 ,  H01L23/3135 ,  H01L23/49562 ,  H01L24/97 ,  H01L2224/05554 ,  H01L2224/451 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/8592 ,  H01L2224/97 ,  H01L24/45 ,  H01L24/48 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01082 ,  H01L2924/181 ,  Y10T29/49121 ,  Y10T428/12194

摘要： A method for manufacturing a plastic encapsulated semiconductor device is provided which comprises the steps of: clamping by upper and lower molds at least external leads and strips of a semiconductor device assembly formed using a lead frame which has a first connecting band connected to the external leads extending from one side of a substrate support further used as a heat sink, and a second connecting band connected to the strips having portions of small cross-sectional areas and of a predetermined length and extending from the other side of the substrate support, the cross sections being perpendicular to an extending direction of the strips, so that the substrate support may float in a cavity formed by the upper and lower molds and parts of the portions of small cross-sectional areas may be disposed in the cavity and the remaining parts thereof may be disposed between the upper and lower molds; injecting a plastic into the cavity; and cutting the portions of small cross-sectional areas of the strips which extend outside a plastic encapsulating housing along the end face of the plastic encapsulating housing and cutting a connecting portion between the external leads and the first connecting band.Also provided is a lead frame having the strips as described above.A plastic layer of desired thickness can be formed on the rear surface of the substrate support. Cutting of the strips from the plastic encapsulating housing is easy and reliable.

摘要翻译： 提供了一种用于制造塑料封装的半导体器件的方法，其包括以下步骤：通过上模和下模至少夹紧外部引线和半导体器件组合带，所述半导体器件组件使用引线框形成，所述引线框具有连接到外部引线的第一连接带 从进一步用作散热器的基板支撑件的一侧延伸，以及连接到具有小横截面积和预定长度并且从基板支撑件的另一侧延伸的部分的条的第二连接带， 部分垂直于条的延伸方向，使得基板支撑件可以浮动在由上模具和下模具形成的空腔中，并且小横截面区域的部分的部分可以设置在空腔中，其余部分 可以设置在上模和下模之间; 将塑料注入腔内; 以及沿着所述塑料封装壳体的端面切割延伸到塑料封装壳体外侧的条的小横截面区域的部分，并切割外部引线与第一连接带之间的连接部分。 还提供了具有如上所述的条带的引线框架。 可以在基板支撑件的后表面上形成所需厚度的塑料层。 从塑料封装壳体切割条是容易和可靠的。

公开(公告)号：US06335223B1

公开(公告)日：2002-01-01

申请号：US09339422

申请日：1999-06-24

申请人： Kouji Takada ,  Masami Yokozawa ,  Hiroyoshi Yoshida ,  Shigeki Sakaguchi

发明人： Kouji Takada ,  Masami Yokozawa ,  Hiroyoshi Yoshida ,  Shigeki Sakaguchi

IPC分类号： H01L2144

CPC分类号： H01L21/565 ,  H01L23/49541 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/451 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/49171 ,  H01L2924/00014 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00015 ,  H01L2224/05599 ,  H01L2924/00012

摘要： A lead frame used for a resin-sealed semiconductor device includes a die-mount portion on which a semiconductor chip rests; and a plurality of leads arranged along a common portion of the lead frame. The plurality of leads include at least one adjusting lead, and the adjusting lead has a length that is less than the others of the plurality of leads such that a tip of the adjusting lead is sufficiently proximate to an outer peripheral surface of a resin-seal body to prevent resin flash during a formation of the semiconductor device and to allow the adjusting lead to be removed after the resin-seal body is formed over a portion of the lead frame.

摘要翻译： 用于树脂密封半导体器件的引线框架包括半导体芯片所在的管芯安装部分; 以及沿引线框架的公共部分布置的多个引线。 多个引线包括至少一个调节引线，并且调节引线的长度小于多个引线中的其他引线的长度，使得调节引线的尖端足够靠近树脂密封件的外周表面 在树脂密封体形成在引线框架的一部分上之后，防止树脂在半导体器件形成过程中发生闪光并允许调整引线被去除。

公开(公告)号：US4503452A

公开(公告)日：1985-03-05

申请号：US378435

申请日：1982-05-14

申请人： Masami Yokozawa ,  Isao Kanai

发明人： Masami Yokozawa ,  Isao Kanai

IPC分类号： H01L23/48 ,  H01L21/56 ,  H01L23/28 ,  H01L23/31 ,  H01L23/495 ,  H01L21/58 ,  H01L23/00 ,  H01L23/34

CPC分类号： H01L21/565 ,  H01L23/3107 ,  H01L23/3135 ,  H01L23/49562 ,  H01L24/97 ,  H01L2924/12033 ,  H01L2924/181 ,  H01L2924/1815

摘要： A plastic encapsulated semiconductor device and a method for manufacturing the same are provided. A substrate support supports a semiconductor substrate and serves as a heat sink. Strips are connected to one side of the substrate support and an external lead is connected to the opposite side of the substrate support. Parts of the strips extend from one side surface of a plastic encapsulating housing. At least one notch or recess is formed in one side surface of the plastic encapsulating housing. The strips are then cut within at least one notch or recess so as not to extend the cut surfaces of the strips from the outermost side surface portion of the encapsulating housing.

摘要翻译： 提供了一种塑料封装的半导体器件及其制造方法。 衬底支撑件支撑半导体衬底并用作散热器。 条带连接到基板支撑件的一侧，并且外部引线连接到基板支撑件的相对侧。 条的一部分从塑料封装壳体的一个侧表面延伸。 在塑料封装壳体的一个侧表面中形成至少一个凹口或凹槽。 然后在至少一个切口或凹槽内切割条，以便不将条带的切割表面从封装壳体的最外侧表面部分延伸。