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公开(公告)号：US20180024279A1
公开(公告)日：2018-01-25
申请号：US15656577
申请日：2017-07-21
Applicant: KYOTO UNIVERSITY , STANLEY ELECTRIC CO., LTD.
Inventor： Shunsuke MURAI , Yusuke YOKOBAYASHI
Abstract: A wavelength conversion apparatus includes a wavelength conversion member that has an incident surface and an emitting surface and generates a wavelength-converted light by converting the wavelength of incident light that is incident on the incident surface and emits the wavelength-converted light from the emitting surface; and an antenna array including a plurality of antennas that are formed on the wavelength conversion member and arranged at a pitch P, which is equal to the approximate optical wavelength of the wavelength-converted light in the wavelength conversion member.
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公开(公告)号：US20240384858A1
公开(公告)日：2024-11-21
申请号：US18685316
申请日：2022-08-25
Applicant: KYOTO UNIVERSITY , STANLEY ELECTRIC CO., LTD.
Inventor： Yusuke YOKOBAYASHI , Yasuyuki KAWAKAMI , Yosuke MAEMURA , Shunsuke MURAI
IPC: F21V9/32 , F21V9/45 , F21Y105/10 , F21Y115/30
Abstract: A wavelength conversion device includes a wavelength converter having a plate shape and a plurality of antennas. The wavelength converter converts a wavelength of incident light and generates wavelength-converted light and emits the wavelength-converted light. The plurality of antennas are disposed on a light-emitting surface of the wavelength converter. The plurality of antennas form an antenna array in a first region of the light-emitting surface. The respective plurality of antennas are arranged with a predetermined period in the first region. The antenna array is absent in a second region outside the first region. An optical path length from a light-receiving surface of the wavelength converter to the light-emitting surface of the incident light that reaches a light-emitting surface of the first region is longer than an optical path length from the light-receiving surface to the light-emitting surface of the incident light that reaches a light-emitting surface of the second region.
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公开(公告)号：US20250031489A1
公开(公告)日：2025-01-23
申请号：US18711620
申请日：2022-11-01
Applicant: KYOTO UNIVERSITY , STANLEY ELECTRIC CO., LTD.
Inventor： Susumu NODA , Hiroyuki KASHIWAGI , Shunya IDE , Tessei IWASAKI , Yasuyuki KAWAKAMI , Yusuke YOKOBAYASHI
Abstract: A substrate has a moth-eye nano pattern on a surface of the substrate in which cone-shaped protrusions are periodically formed, a first semiconductor layer on the moth-eye nano pattern and having a photonic crystal layer, an active layer on the first semiconductor layer and having a light-emitting layer, and a second semiconductor layer on the active layer.
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公开(公告)号：US20200025341A1
公开(公告)日：2020-01-23
申请号：US16510736
申请日：2019-07-12
Applicant: KYOTO UNIVERSITY , STANLEY ELECTRIC CO., LTD.
Inventor： Shunsuke MURAI , Yusuke YOKOBAYASHI , Yasuyuki KAWAKAMI , Keijiro TAKASHIMA , Syousaku KUBO , Yosuke MAEMURA
Abstract: A wavelength conversion device includes: a wavelength conversion element having a phosphor plate that converts the wavelength of incident light upon a light incident surface to generate wavelength-converted light, and emits the wavelength-converted light from a light emission surface; an antenna array constituted of a plurality of optical antennas that are periodically arranged on the light emission surface of the phosphor plate; and a recessed structure including at least one recessed portion provided in the light emission surface of the phosphor plate.
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公开(公告)号：US20230080194A1
公开(公告)日：2023-03-16
申请号：US17797885
申请日：2021-02-05
Applicant: STANLEY ELECTRIC CO., LTD.
Inventor： Yusuke YOKOBAYASHI , Yasuyuki KAWAKAMI , Yosuke MAEMURA , Hideaki YAMAMOTO , Keijiro TAKASHIMA , Ryosuke KAMAKURA
IPC: F21V7/30 , F21V9/35 , F21K9/64 , H01S5/0239
Abstract: An optical device includes a metal reflective layer substantially made of a metal material, a first light transmissive layer disposed on the metal reflective layer, an optical multilayer reflective film disposed on the first light transmissive layer and including a plurality of sublayers stacked on each other and having different refractive indexes, and a wavelength converting layer disposed on the optical multilayer reflective film and containing a fluorescent material capable of absorbing incident excitation light and generating fluorescent light having a lower energy. The wavelength converting layer is capable of generating mixed light containing the excitation light and the fluorescent light in response to irradiation with the excitation light.
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Patent Agency Ranking
公开(公告)号：US20170244220A1
公开(公告)日：2017-08-24
申请号：US15439583
申请日：2017-02-22
Applicant: STANLEY ELECTRIC CO., LTD.
Inventor： Philip RACKOW , Yusuke YOKOBAYASHI , Keijiro TAKASHIMA
CPC classification number: H01S5/3202 , H01S5/0202 , H01S5/0203 , H01S5/0425 , H01S5/2201 , H01S5/2202 , H01S5/24 , H01S5/32341
Abstract: A method for manufacturing a semiconductor light-emitting device includes: forming a plurality of guide grooves so as to be depressed from a surface of a semiconductor structure layer toward a semiconductor substrate and to align and extend along a direction perpendicular to an extending direction of a plurality of line electrodes; forming, in each of the plurality of guide grooves, a scribe groove so as to be depressed from a bottom surface of the guide groove toward the semiconductor substrate and to extend along an extending direction of the guide groove; and dividing a semiconductor wafer along the plurality of guide grooves. The guide groove and the scribe groove are formed to have end shapes in such a manner that inner walls thereof project toward each other in the extending direction of the scribe groove.
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公开(公告)号：US20170271847A1
公开(公告)日：2017-09-21
申请号：US15452772
申请日：2017-03-08
Applicant: STANLEY ELECTRIC CO., LTD.
Inventor： Shinichi TANAKA , Kazuki KIYOHARA , Yusuke YOKOBAYASHI
CPC classification number: H01S5/18327 , H01L33/0075 , H01L33/025 , H01L33/10 , H01L33/16 , H01L33/22 , H01L33/32 , H01L2933/0058 , H01S5/0425 , H01S5/1231 , H01S5/183 , H01S5/18319 , H01S5/18341 , H01S5/187 , H01S5/34333
Abstract: A semiconductor light-emitting element has a distributed Bragg reflector that is grown by depositing an InAlN layer and a GaN layer a plurality of times in that order on a semipolar plane of a semiconductor substrate, and a semiconductor structure layer that is formed on the distributed Bragg reflector and includes an active layer. The InAlN layer has a plurality of projections on an interface with the GaN layer, and the InAlN layer has a low In region which is formed at the top of each of the plurality of projections and which is lower in In composition than the remaining region.
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公开(公告)号：US20140319534A1
公开(公告)日：2014-10-30
申请号：US14257666
申请日：2014-04-21
Applicant: STANLEY ELECTRIC CO., LTD.
Inventor： Mamoru MIYACHI , Tatsuma SAITO , Takako HAYASHI , Yasuyuki SHIBATA , Yusuke YOKOBAYASHI , Takanobu AKAGI , Ryosuke KAWAI
CPC classification number: H01L33/32 , H01L25/0753 , H01L33/382 , H01L33/405 , H01L33/44 , H01L33/62 , H01L2924/0002 , H01L2933/0016 , H01L2933/0025 , H01L2933/0066 , H01L2924/00
Abstract: A semiconductor light emitting element comprises an optical semiconductor laminated layer providing vias, an electrode that is disposed on a surface of the optical semiconductor laminated layer and separated from the second semiconductor layer in a peripheral portion of the electrode, a first transparent insulating layer that is disposed between the peripheral portion of the electrode and the optical semiconductor laminated layer, and a second transparent insulating layer that is disposed to cover the electrode, that envelops the peripheral portion of the electrode together with the first transparent insulating layer.
Abstract translation: 半导体发光元件包括提供通孔的光学半导体层叠层，设置在光学半导体层叠层的表面上并与电极的周边部分与第二半导体层分离的电极，第一透明绝缘层 设置在电极的周边部分和光学半导体层叠层之间，以及设置成覆盖电极的第二透明绝缘层，其与第一透明绝缘层一起包围电极的周边部分。
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公开(公告)号：US20140319455A1
公开(公告)日：2014-10-30
申请号：US14257610
申请日：2014-04-21
Applicant: STANLEY ELECTRIC CO., LTD.
Inventor： Mamoru MIYACHI , Tatsuma SAITO , Takako HAYASHI , Yusuke YOKOBAYASHI , Takanobu AKAGI , Ryosuke KAWAI
CPC classification number: H01L33/405 , H01L33/0079 , H01L33/06 , H01L33/08 , H01L33/382 , H01L33/60 , H01L33/62 , H01L2224/16145 , H01L2224/45144 , H01L2224/48091 , H01L2224/48464 , H01L2924/10158 , H01L2924/00014 , H01L2924/00
Abstract: A semiconductor light emitting apparatus includes semiconductor lamination of n-type layer, active layer, and p-type layer; recess penetrating the lamination from the p-type layer and exposing the n-type layer; n-side electrode formed on the n-type layer at the bottom of the recess and extending upward above the p-type layer; a p-side electrode formed on the p-type layer and having an opening surrounding the recess in plan view, the n-side electrode extending from inside to above the recess; and an insulating layer disposed between the p-side and the n-side electrodes on the p-type layer, the p-side electrode constituting a reflective electrode reflecting light incident from the active layer, the n-side electrode including a reflective electrode layer covering the opening in plan view and reflects light incident from the emission layer side, the reflective electrode layer having peripheral portion overlapping peripheral portion of the p-side electrode in plan view.
Abstract translation: 半导体发光装置包括n型层，有源层和p型层的半导体层叠; 从p型层穿透层叠并露出n型层的凹部; n侧电极形成在凹部的底部的n型层上并在p型层上方向上延伸; p侧电极，形成在p型层上，在俯视图中具有围绕凹部的开口，n侧电极从内侧延伸到凹部的上方; 以及设置在p型层的p侧和n侧电极之间的绝缘层，p侧电极构成反射从有源层入射的光的反射电极，n侧电极包括反射电极层 在平面图中覆盖开口并且反射从发射层侧入射的光，反射电极层在平面图中具有与p侧电极的周边部分重叠的周边部分。
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公开(公告)号：US20220368107A1
公开(公告)日：2022-11-17
申请号：US17624159
申请日：2020-06-17
Applicant: STANLEY ELECTRIC CO., LTD.
Inventor： Komei TAZAWA , Seiichiro KOBAYASHI , Yusuke YOKOBAYASHI
Abstract: A vertical cavity surface emitting device includes a substrate, a first multilayer film reflecting mirror, a first semiconductor layer having a first conductivity type, a light-emitting layer, a second semiconductor layer having a second conductivity type opposite of the first conductivity type, and having an upper surface with a projection, an insulating layer that covers the upper surface of the second semiconductor layer and has an opening that exposes the second semiconductor layer on the upper surface of the projection terminated on the upper surface of the projection of the second semiconductor layer, a transmissive electrode layer that covers the upper surface of the second semiconductor layer exposed from the opening of the insulating layer and is formed on the insulating layer, and a second multilayer film reflecting mirror formed on the transmissive electrode layer and constituting a resonator together with the first multilayer film reflecting mirror.
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