公开(公告)号：US08754429B2

公开(公告)日：2014-06-17

申请号：US13154999

申请日：2011-06-07

Applicant: Hiroshi Koizumi ,  Yasuhide Okada ,  Susumu Obata ,  Tomomichi Naka ,  Kazuhito Higuchi ,  Kazuo Shimokawa ,  Yoshiaki Sugizaki ,  Akihiro Kojima

Inventor： Hiroshi Koizumi ,  Yasuhide Okada ,  Susumu Obata ,  Tomomichi Naka ,  Kazuhito Higuchi ,  Kazuo Shimokawa ,  Yoshiaki Sugizaki ,  Akihiro Kojima

IPC: H01L33/00 ,  H01L21/00

CPC classification number: H01L33/44 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/50 ,  H01L33/58 ,  H01L33/62 ,  H01L2224/16 ,  H01L2933/0058

Abstract: According to one embodiment, an optical semiconductor device includes a light emitting layer, a transparent layer, a first metal post, a second metal post and a sealing layer. The light emitting layer includes a first and a second major surface, a first and a second electrode. The second major surface is a surface opposite to the first major surface, and the first electrode and second electrodes are formed on the second major surface. The transparent layer is provided on the first major surface. The first metal post is provided on the first electrode. The second metal post is provided on the second electrode. The sealing layer is provided on the second major surface. The sealing layer covers a side surface of the light emitting layer and seals the first and second metal posts while leaving end portions of the first and second metal posts exposed.

Abstract translation: 根据一个实施例，光学半导体器件包括发光层，透明层，第一金属柱，第二金属柱和密封层。 发光层包括第一和第二主表面，第一和第二电极。 第二主表面是与第一主表面相对的表面，并且第一电极和第二电极形成在第二主表面上。 透明层设置在第一主表面上。 第一金属柱设置在第一电极上。 第二金属柱设置在第二电极上。 密封层设置在第二主表面上。 密封层覆盖发光层的侧表面，并且密封第一和第二金属柱，同时使第一和第二金属柱的端部露出。

公开(公告)号：US20110312110A1

公开(公告)日：2011-12-22

申请号：US13221634

申请日：2011-08-30

Applicant: Akihiko HAPPOYA ,  Kazuhito Higuchi ,  Tomohiro Iguchi ,  Kazuo Shimokawa ,  Takashi Koyanagawa ,  Michinobu Inoue ,  Izuru Komatsu ,  Hisashi Ito

Inventor： Akihiko HAPPOYA ,  Kazuhito Higuchi ,  Tomohiro Iguchi ,  Kazuo Shimokawa ,  Takashi Koyanagawa ,  Michinobu Inoue ,  Izuru Komatsu ,  Hisashi Ito

IPC: H01L33/52

CPC classification number: H01L33/62 ,  H01L33/483 ,  H01L33/54 ,  H01L33/60 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

Abstract: An optical semiconductor device includes a light emitting element having a first surface and a second surface, the first surface having a first electrode provided thereon, the second surface being located on the opposite side from the first surface and having a second electrode provided thereon; a first conductive member connected to the first surface; a second conductive member connected to the second surface; a first external electrode connected to the first conductive member; a second external electrode connected to the second conductive member; and an enclosure sealing the light emitting element, the first conductive member, and the second conductive member between the first external electrode and the second external electrode, and being configured to transmit light emitted from the light emitting element.

Abstract translation: 光学半导体器件包括具有第一表面和第二表面的发光元件，所述第一表面具有设置在其上的第一电极，所述第二表面位于与所述第一表面相对的一侧，并且具有设置在其上的第二电极; 连接到第一表面的第一导电构件; 连接到第二表面的第二导电构件; 连接到第一导电构件的第一外部电极; 连接到第二导电构件的第二外部电极; 以及将所述发光元件，所述第一导电构件和所述第二导电构件密封在所述第一外部电极和所述第二外部电极之间并且被配置为透射从所述发光元件发射的光的外壳。

公开(公告)号：US20110297983A1

公开(公告)日：2011-12-08

申请号：US13152654

申请日：2011-06-03

Applicant: Hideo NISHIUCHI ,  Kazuhito Higuchi ,  Susumu Obata ,  Toshiya Nakayama

Inventor： Hideo NISHIUCHI ,  Kazuhito Higuchi ,  Susumu Obata ,  Toshiya Nakayama

IPC: H01L33/50

CPC classification number: H01L33/647 ,  H01L33/0079 ,  H01L33/44 ,  H01L33/505 ,  H01L33/58 ,  H01L33/62 ,  H01L33/642 ,  H01L2924/0002 ,  H01L2933/0041 ,  H01L2924/00

Abstract: According to one embodiment, a semiconductor light emitting device includes a light emitting unit, first and second conductive members, an insulating layer, a sealing member, and an optical layer. The light emitting unit includes a semiconductor stacked body and first and second electrodes. The semiconductor stacked body includes first and second semiconductor layers and a light emitting layer, and has a major surface on a second semiconductor layer side. The first and second electrodes are connected to the first and second semiconductor layers on the major surface side, respectively. The first conductive member is connected to the first electrode and includes a first columnar portion covering a portion of the second semiconductor. The insulating layer is provided between the first columnar portion and the portion of the second semiconductor. The sealing member covers side surfaces of the conductive members. The optical layer is provided on the other major surface.

Abstract translation: 根据一个实施例，半导体发光器件包括发光单元，第一和第二导电构件，绝缘层，密封构件和光学层。 发光单元包括半导体层叠体和第一和第二电极。 半导体层叠体包括第一和第二半导体层和发光层，并且在第二半导体层侧具有主表面。 第一和第二电极分别连接到主表面侧的第一和第二半导体层。 第一导电构件连接到第一电极并且包括覆盖第二半导体的一部分的第一柱状部分。 绝缘层设置在第一柱状部分和第二半导体的部分之间。 密封构件覆盖导电构件的侧表面。 光学层设置在另一个主表面上。

公开(公告)号：US08987762B2

公开(公告)日：2015-03-24

申请号：US13607480

申请日：2012-09-07

Applicant: Toshiya Nakayama ,  Kazuhito Higuchi ,  Hiroshi Koizumi ,  Hideo Nishiuchi ,  Susumu Obata ,  Akiya Kimura ,  Yoshiaki Sugizaki ,  Akihiro Kojima ,  Yosuke Akimoto

Inventor： Toshiya Nakayama ,  Kazuhito Higuchi ,  Hiroshi Koizumi ,  Hideo Nishiuchi ,  Susumu Obata ,  Akiya Kimura ,  Yoshiaki Sugizaki ,  Akihiro Kojima ,  Yosuke Akimoto

IPC: H01L33/50 ,  H01L33/56 ,  H01L33/54

CPC classification number: H01L33/56 ,  H01L27/15 ,  H01L33/502 ,  H01L33/505 ,  H01L33/508 ,  H01L33/54 ,  H01L2933/0041

Abstract: According to one embodiment, a light-emitting unit which emits light, a wavelength conversion unit which includes a phosphor and which is provided on a main surface of the light-emitting unit, and a transparent resin which is provided on top of the wavelength conversion unit, are prepared. The transparent resin has a greater modulus of elasticity and/or a higher Shore hardness than the wavelength conversion unit.

Abstract translation: 根据一个实施例，发射光的发光单元，包括荧光体并设置在发光单元的主表面上的波长转换单元和设置在波长转换器顶部的透明树脂 单位，准备。 透明树脂具有比波长转换单元更大的弹性模量和/或更高的肖氏硬度。

公开(公告)号：US20130069102A1

公开(公告)日：2013-03-21

申请号：US13607418

申请日：2012-09-07

Applicant: Akiya KIMURA ,  Kazuhito Higuchi ,  Hideo Nishiuchi ,  Susumu Obata ,  Toshiya Nakayama ,  Yoshiaki Sugizaki ,  Akihiro Kojima ,  Yosuke Akimoto

Inventor： Akiya KIMURA ,  Kazuhito Higuchi ,  Hideo Nishiuchi ,  Susumu Obata ,  Toshiya Nakayama ,  Yoshiaki Sugizaki ,  Akihiro Kojima ,  Yosuke Akimoto

IPC: H01L33/36

CPC classification number: H01L33/62 ,  H01L33/486 ,  H01L2924/0002 ,  H01L2933/0066 ,  H01L2924/00

Abstract: A semiconductor light-emitting device includes a laminated body that is configured to emit light from a main surface thereof, first and second electrodes, each disposed on a surface of the laminated body that is opposite the main surface, a first terminal that is electrically coupled to the first electrode, has a concave edge but not a convex edge, and has at most three exposed sides, and a second terminal that is electrically coupled to the second electrode, has a concave edge but not a convex edge, and has at most three exposed sides.

Abstract translation: 一种半导体发光器件，包括被配置为从其主表面发光的层叠体，每个设置在层叠体的与主表面相对的表面上的第一和第二电极，电耦合的第一端子 具有凹形边缘但不具有凸边缘，并且具有至多三个外露侧面，并且电耦合到第二电极的第二端子具有凹形边缘但不具有凸起边缘，并且具有至多 三个暴露的一面。

公开(公告)号：US20120241792A1

公开(公告)日：2012-09-27

申请号：US13424687

申请日：2012-03-20

Applicant: Susumu Obata ,  Kazuhito Higuchi ,  Hideo Nishiuchi ,  Akiya Kimura ,  Toshiya Nakayama ,  Yoshiaki Sugizaki ,  Akihiro Kojima ,  Yosuke Akimoto

Inventor： Susumu Obata ,  Kazuhito Higuchi ,  Hideo Nishiuchi ,  Akiya Kimura ,  Toshiya Nakayama ,  Yoshiaki Sugizaki ,  Akihiro Kojima ,  Yosuke Akimoto

IPC: H01L33/60 ,  H01L33/00

CPC classification number: H01L33/62 ,  H01L33/486 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2924/00

Abstract: According to an embodiment, a semiconductor light emitting device includes a stacked body, first and second electrodes, first and second interconnections, first and second pillars and a first insulating layer. The stacked body includes first and second semiconductor layers and a light emitting layer. The first and second electrodes are connected to the first and second semiconductor layers respectively. The first and second interconnections are connected to the first and second electrode respectively. The first and second pillars are connected to the first and second interconnections respectively. The first insulating layer is provided on the interconnections and the pillars. The first and second pillars have first and second monitor pads exposed in a surface of the first insulating layer. The first and second interconnections have first and second bonding pads exposed in a side face connected with the surface of the first insulating layer.

Abstract translation: 根据实施例，半导体发光器件包括层叠体，第一和第二电极，第一和第二互连，第一和第二柱以及第一绝缘层。 层叠体包括第一和第二半导体层和发光层。 第一和第二电极分别连接到第一和第二半导体层。 第一和第二互连分别连接到第一和第二电极。 第一和第二支柱分别连接到第一和第二互连。 第一绝缘层设置在互连和支柱上。 第一和第二支柱具有暴露在第一绝缘层的表面中的第一和第二监视器焊盘。 第一和第二互连具有暴露在与第一绝缘层的表面连接的侧面中的第一和第二接合焊盘。

公开(公告)号：US20110297987A1

公开(公告)日：2011-12-08

申请号：US13154999

申请日：2011-06-07

Applicant: Hiroshi KOIZUMI ,  Yasuhide Okada ,  Susumu Obata ,  Tomomichi Naka ,  Kazuhito Higuchi ,  Kazuo Shimokawa

Inventor： Hiroshi KOIZUMI ,  Yasuhide Okada ,  Susumu Obata ,  Tomomichi Naka ,  Kazuhito Higuchi ,  Kazuo Shimokawa

IPC: H01L33/50

CPC classification number: H01L33/44 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/50 ,  H01L33/58 ,  H01L33/62 ,  H01L2224/16 ,  H01L2933/0058

Abstract: According to one embodiment, an optical semiconductor device includes a light emitting layer, a transparent layer, a first metal post, a second metal post and a sealing layer. The light emitting layer includes a first and a second major surface, a first and a second electrode. The second major surface is a surface opposite to the first major surface, and the first electrode and second electrodes are formed on the second major surface. The transparent layer is provided on the first major surface. The first metal post is provided on the first electrode. The second metal post is provided on the second electrode. The sealing layer is provided on the second major surface. The sealing layer covers a side surface of the light emitting layer and seals the first and second metal posts while leaving end portions of the first and second metal posts exposed.

Abstract translation: 根据一个实施例，光学半导体器件包括发光层，透明层，第一金属柱，第二金属柱和密封层。 发光层包括第一和第二主表面，第一和第二电极。 第二主表面是与第一主表面相对的表面，并且第一电极和第二电极形成在第二主表面上。 透明层设置在第一主表面上。 第一金属柱设置在第一电极上。 第二金属柱设置在第二电极上。 密封层设置在第二主表面上。 密封层覆盖发光层的侧表面，并且密封第一和第二金属柱，同时使第一和第二金属柱的端部露出。

公开(公告)号：US20110297986A1

公开(公告)日：2011-12-08

申请号：US13154916

申请日：2011-06-07

Applicant: Hideo NISHIUCHI ,  Kazuhito Higuchi ,  Susumu Obata ,  Toshiya Nakayama

Inventor： Hideo NISHIUCHI ,  Kazuhito Higuchi ,  Susumu Obata ,  Toshiya Nakayama

IPC: H01L33/50

CPC classification number: H01L33/0079 ,  H01L24/06 ,  H01L33/0095 ,  H01L33/507 ,  H01L33/508 ,  H01L33/647 ,  H01L2224/06051 ,  H01L2924/12041 ,  H01L2933/0066 ,  H01L2924/00

Abstract: According to one embodiment, a light source apparatus includes a semiconductor light emitting device, a mounting substrate, first and second connection members. The semiconductor light emitting device includes a light emitting unit, first and second conductive members, a sealing member, and an optical layer. The mounting substrate includes a base body, first and second substrate electrodes. The connection member electrically connects the conductive member to the substrate electrode. The conductive member is electrically connected to the light emitting unit electrode and includes first and second columnar portions provided on the second major surface. The sealing member covers side surfaces of the first and the second conductive members. The optical layer is provided on the first major surface of the semiconductor stacked body and includes a wavelength conversion unit. A surface area of the second substrate electrode is not less than 100 times a cross-sectional area of the second columnar portion.

Abstract translation: 根据一个实施例，光源装置包括半导体发光器件，安装衬底，第一和第二连接构件。 半导体发光器件包括发光单元，第一和第二导电构件，密封构件和光学层。 安装基板包括基体，第一和第二基板电极。 连接构件将导电构件电连接到基板电极。 导电构件电连接到发光单元电极，并且包括设置在第二主表面上的第一和第二柱状部分。 密封构件覆盖第一和第二导电构件的侧表面。 光学层设置在半导体层叠体的第一主表面上并且包括波长转换单元。 第二基板电极的表面积不小于第二柱状部分的横截面面积的100倍。

公开(公告)号：US08039045B2

公开(公告)日：2011-10-18

申请号：US11191170

申请日：2005-07-27

Applicant: Youichi Tei ,  Akira Iso ,  Kazuhito Higuchi ,  Hajime Kurihara ,  Hiroyuki Uwazumi

Inventor： Youichi Tei ,  Akira Iso ,  Kazuhito Higuchi ,  Hajime Kurihara ,  Hiroyuki Uwazumi

IPC: B05D5/12 ,  B05D3/10 ,  B05D3/02 ,  C23C18/18 ,  C23C18/31 ,  C23C18/32 ,  C23C18/34 ,  C23C18/50

CPC classification number: C03C15/00 ,  C03C17/38 ,  C03C23/0075 ,  C23C18/1694 ,  C23C18/1893 ,  G11B5/8404

Abstract: An object of the present invention is to provide a plating method on a glass base plate. The method allows forming a plating film on a base plate composed of a glass material with excellent adhesivity and homogeneity by means of an electroless plating method even to a thickness of 1 μm or more. Before forming a plating film by a step of electroless plating S6, a surface treatment process is conducted on a surface of the base plate composed of a glass material. The surface treatment process comprises at least a step of glass activation treatment S2 to increase quantity of silanol groups on the surface of the base plate at least by a factor of two using an aqueous solution of diluted acid, a step of silane coupling agent treatment S3, a step of palladium catalyst treatment S4, and a step of palladium bonding treatment S5.

Abstract translation: 本发明的目的是提供一种在玻璃基板上的电镀方法。 该方法允许通过化学镀方法在具有优异的粘合性和均匀性的玻璃材料的基板上形成镀膜，甚至至1μm以上的厚度。 在通过化学镀S6的步骤形成镀膜之前，在由玻璃材料构成的基板的表面上进行表面处理。 表面处理方法至少包括玻璃活化处理S2的步骤，以使用稀酸水溶液将基板表面上的硅烷醇基增加至少两倍，硅烷偶联剂处理步骤S3 ，钯催化剂处理步骤S4和钯结合处理步骤S5。

公开(公告)号：US20060024431A1

公开(公告)日：2006-02-02

申请号：US11191170

申请日：2005-07-27

Applicant: Youichi Tei ,  Akira Iso ,  Kazuhito Higuchi ,  Hajime Kurihara ,  Hiroyuki Uwazumi

Inventor： Youichi Tei ,  Akira Iso ,  Kazuhito Higuchi ,  Hajime Kurihara ,  Hiroyuki Uwazumi

IPC: B05D5/12 ,  B05D3/00

CPC classification number: C03C15/00 ,  C03C17/38 ,  C03C23/0075 ,  C23C18/1694 ,  C23C18/1893 ,  G11B5/8404

Abstract: An object of the present invention is to provide a plating method on a glass base plate. The method allows forming a plating film on a base plate composed of a glass material with excellent adhesivity and homogeneity by means of an electroless plating method even to a thickness of 1 μm or more. Before forming a plating film by a step of electroless plating S6, a surface treatment process is conducted on a surface of the base plate composed of a glass material. The surface treatment process comprises at least a step of glass activation treatment S2 to increase quantity of silanol groups on the surface of the base plate at least by a factor of two using an aqueous solution of diluted acid, a step of silane coupling agent treatment S3, a step of palladium catalyst treatment S4, and a step of palladium bonding treatment S5.

Abstract translation: 本发明的目的是提供一种在玻璃基板上的电镀方法。 该方法允许通过化学镀方法在具有优异的粘合性和均匀性的玻璃材料的基板上形成镀膜，甚至厚度为1um或更大。 在通过无电解电镀步骤S 6形成电镀膜之前，在由玻璃材料构成的基板的表面上进行表面处理工艺。 表面处理方法至少包括玻璃活化处理S 2的步骤，以使用稀酸水溶液至少增加2倍的基板表面的硅烷醇基团量，硅烷偶联剂处理步骤 S 3，钯催化剂处理工序S4，钯键合处理工序S 5。