公开(公告)号：US20120211764A1

公开(公告)日：2012-08-23

申请号：US13359855

申请日：2012-01-27

申请人： Keishiro OKAMOTO ,  Tadahiro IMADA ,  Nobuhiro IMAIZUMI ,  Keiji WATANABE

发明人： Keishiro OKAMOTO ,  Tadahiro IMADA ,  Nobuhiro IMAIZUMI ,  Keiji WATANABE

IPC分类号： H01L23/488 ,  H01L21/60 ,  H01L29/20

CPC分类号： H01L24/32 ,  H01L23/3121 ,  H01L23/49513 ,  H01L23/49568 ,  H01L24/06 ,  H01L24/27 ,  H01L24/29 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L2224/04042 ,  H01L2224/0603 ,  H01L2224/29083 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/29211 ,  H01L2224/29239 ,  H01L2224/29244 ,  H01L2224/29247 ,  H01L2224/29255 ,  H01L2224/29264 ,  H01L2224/29269 ,  H01L2224/29311 ,  H01L2224/29339 ,  H01L2224/29344 ,  H01L2224/29347 ,  H01L2224/29355 ,  H01L2224/29364 ,  H01L2224/29369 ,  H01L2224/29565 ,  H01L2224/2969 ,  H01L2224/3201 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/48472 ,  H01L2224/73265 ,  H01L2224/83051 ,  H01L2224/83192 ,  H01L2224/838 ,  H01L2224/83815 ,  H01L2224/8384 ,  H01L2224/83986 ,  H01L2224/92247 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/1033 ,  H01L2924/13055 ,  H01L2924/13064 ,  H01L2924/181 ,  H01L2924/351 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/01083 ,  H01L2924/3512

摘要： A semiconductor device includes: a support base material, and a semiconductor element bonded to the support base material with a binder, the binder including: a porous metal material that contacts the support base material and the semiconductor element, and a solder that is filled in at least one part of pores of the porous metal material.

摘要翻译： 半导体器件包括：支撑基底材料和用粘合剂粘合到支撑基底材料上的半导体元件，所述粘合剂包括：接触所述支撑基底材料和所述半导体元件的多孔金属材料，以及填充在所述基底材料中的焊料 多孔金属材料的孔的至少一部分。

公开(公告)号：US20120199991A1

公开(公告)日：2012-08-09

申请号：US13331090

申请日：2011-12-20

申请人： Keishiro OKAMOTO ,  Tadahiro Imada ,  Nobuhiro Imaizumi ,  Keiji Watanabe

发明人： Keishiro OKAMOTO ,  Tadahiro Imada ,  Nobuhiro Imaizumi ,  Keiji Watanabe

IPC分类号： H01L23/29 ,  H01L21/56

CPC分类号： H01L23/3135 ,  H01L23/3121 ,  H01L23/3142 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/0603 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/48472 ,  H01L2224/8592 ,  H01L2924/00014 ,  H01L2924/09701 ,  H01L2924/13064 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/85399 ,  H01L2224/05599

摘要： A semiconductor device includes: a semiconductor chip including a nitride semiconductor layered structure including a carrier transit layer and a carrier supply layer; a first resin layer on the semiconductor chip, the first resin layer including a coupling agent; a second resin layer on the first resin layer, the second resin layer including a surfactant; and a sealing resin layer to seal the semiconductor chip with the first resin layer and the second resin layer.

摘要翻译： 半导体器件包括：半导体芯片，其包括具有载流子迁移层和载流子供给层的氮化物半导体层叠结构; 在所述半导体芯片上的第一树脂层，所述第一树脂层包含偶联剂; 在第一树脂层上的第二树脂层，第二树脂层包括表面活性剂; 以及用第一树脂层和第二树脂层密封半导体芯片的密封树脂层。

公开(公告)号：US20100024963A1

公开(公告)日：2010-02-04

申请号：US12576500

申请日：2009-10-09

申请人： Keishiro OKAMOTO ,  Mamoru KURASHINA ,  Tomoyuki ABE

发明人： Keishiro OKAMOTO ,  Mamoru KURASHINA ,  Tomoyuki ABE

IPC分类号： B29C70/08 ,  H01L23/48

CPC分类号： B32B5/26 ,  B32B3/02 ,  B32B5/024 ,  B32B7/02 ,  B32B27/08 ,  B32B27/12 ,  B32B27/281 ,  B32B2250/05 ,  B32B2255/10 ,  B32B2255/205 ,  B32B2260/021 ,  B32B2260/046 ,  B32B2262/101 ,  B32B2262/106 ,  B32B2307/308 ,  B32B2307/734 ,  B32B2457/00 ,  H01L2924/0002 ,  H05K1/036 ,  H05K1/0366 ,  H05K3/429 ,  H05K3/4641 ,  H05K2201/0323 ,  H05K2201/068 ,  Y10T428/24149 ,  Y10T428/24942 ,  Y10T428/249923 ,  Y10T428/24994 ,  Y10T428/249945 ,  Y10T442/643 ,  Y10T442/659 ,  Y10T442/668 ,  Y10T442/696 ,  Y10T442/697 ,  H01L2924/00

摘要： A stack of 50 layers of a first pitch-base carbon fiber sheet is formed, two sets of stack each having two second pitch-base carbon fiber sheets stacked therein are fabricated. At this time, the second carbon fiber sheets have a thermal expansion coefficient larger than that of the first carbon fiber sheet. Next, the stack of the first carbon fiber sheet is then held between two sets of stack of the second carbon fiber sheets. The stack of the first and second carbon fiber sheets are then impregnated with an epoxy-base resin composition and the resin is solidified. As a result a prepreg composed of the first and second carbon fiber sheets and the resin component composed of the epoxy-base resin composition is obtained. Thereafter, interconnections and the like are then formed on the prepreg, to thereby complete a multilevel interconnection board.

摘要翻译： 形成50层第一沥青基碳纤维片的叠层，制成两组堆叠在其中的两个第二沥青基碳纤维片。 此时，第二碳纤维片的热膨胀系数大于第一碳纤维片的热膨胀系数。 接下来，将第一碳纤维片的叠层保持在两组第二碳纤维片之间。 然后将第一和第二碳纤维片材的叠层用环氧树脂基树脂组合物浸渍，并使树脂固化。 结果得到由第一和第二碳纤维片材构成的预浸料和由环氧基树脂组合物构成的树脂组分。 此后，在预浸料坯上形成互连等，从而完成多层互连板。

公开(公告)号：US20090186425A1

公开(公告)日：2009-07-23

申请号：US12413898

申请日：2009-03-30

申请人： Masataka MIZUKOSHI ,  Yoshikatsu ISHIZUKI ,  Kanae NAKAGAWA ,  Keishiro OKAMOTO ,  Kazuo TESHIROGI ,  Taiji SAKAI

发明人： Masataka MIZUKOSHI ,  Yoshikatsu ISHIZUKI ,  Kanae NAKAGAWA ,  Keishiro OKAMOTO ,  Kazuo TESHIROGI ,  Taiji SAKAI

IPC分类号： H01L21/66 ,  H01L21/98 ,  H01L23/498 ,  H01L21/78 ,  H01L21/44

CPC分类号： H01L24/81 ,  H01L21/4853 ,  H01L21/78 ,  H01L22/12 ,  H01L22/14 ,  H01L22/26 ,  H01L24/11 ,  H01L24/13 ,  H01L24/27 ,  H01L24/29 ,  H01L24/83 ,  H01L24/94 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05023 ,  H01L2224/0508 ,  H01L2224/05124 ,  H01L2224/05155 ,  H01L2224/05568 ,  H01L2224/05572 ,  H01L2224/05644 ,  H01L2224/11019 ,  H01L2224/1134 ,  H01L2224/11464 ,  H01L2224/11602 ,  H01L2224/11632 ,  H01L2224/1184 ,  H01L2224/13012 ,  H01L2224/13099 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/13155 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/274 ,  H01L2224/29111 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/73104 ,  H01L2224/749 ,  H01L2224/75 ,  H01L2224/75252 ,  H01L2224/81075 ,  H01L2224/81801 ,  H01L2224/83192 ,  H01L2224/83193 ,  H01L2224/838 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/0781 ,  H01L2924/12042 ,  H01L2924/15788 ,  H01L2924/00014 ,  H01L2924/01028 ,  H01L2924/00 ,  H01L2224/29099

摘要： A semiconductor substrate (1) is secured by suction to a rear face (1b) of a supporting face (11a) of a substrate supporting table (11). In this event, the thickness of the semiconductor substrate (1) is made fixed by planarization on the rear face (1b), and the rear face (1b) is forcibly brought into a state free from undulation by the suction to the supporting face (11a), so that the rear face (1b) becomes a reference face for planarization of a front face (1a). In this state, a tool (10) is used to cut surface layers of Au projections (2) and a resist mask (12) on the front face (1a), thereby planarizing the Au projections (2) and the resist mask (12) so that their surfaces become continuously flat. This can planarize the surfaces of fine bumps formed on the substrate at a low cost and a high speed in place of CMP.

摘要翻译： 半导体衬底（1）通过抽吸固定到衬底支撑台（11）的支撑面（11a）的后表面（1b）上。 在这种情况下，半导体衬底（1）的厚度通过在后表面（1b）上的平坦化而被固定，并且后表面（1b）被强制地进入到通过吸力而不起伏的状态到支撑面（ 11a），使得背面（1b）成为用于使正面（1a）平坦化的基准面。 在这种状态下，使用工具（10）来切割前表面（1a）上的Au突起（2）和抗蚀剂掩模（12）的表面层，从而使Au突起（2）和抗蚀剂掩模（12）平坦化 ），使其表面变得连续平坦。 这可以以低成本和高速代替CMP来平坦化形成在基板上的微细凸块的表面。