公开(公告)号：US08728867B2

公开(公告)日：2014-05-20

申请号：US13355792

申请日：2012-01-23

申请人： Kozo Shimizu ,  Keishiro Okamoto ,  Nobuhiro Imaizumi ,  Tadahiro Imada ,  Keiji Watanabe

发明人： Kozo Shimizu ,  Keishiro Okamoto ,  Nobuhiro Imaizumi ,  Tadahiro Imada ,  Keiji Watanabe

IPC分类号： H01L21/44

CPC分类号： H01L23/48 ,  H01L23/3128 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L2224/04026 ,  H01L2224/05005 ,  H01L2224/05082 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/05541 ,  H01L2224/05573 ,  H01L2224/05644 ,  H01L2224/0603 ,  H01L2224/26175 ,  H01L2224/2745 ,  H01L2224/2746 ,  H01L2224/29019 ,  H01L2224/29036 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/29113 ,  H01L2224/2912 ,  H01L2224/29139 ,  H01L2224/29144 ,  H01L2224/29147 ,  H01L2224/29155 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29339 ,  H01L2224/29499 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/325 ,  H01L2224/32502 ,  H01L2224/32506 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48245 ,  H01L2224/48247 ,  H01L2224/48644 ,  H01L2224/48744 ,  H01L2224/4903 ,  H01L2224/73265 ,  H01L2224/83193 ,  H01L2224/83194 ,  H01L2224/83801 ,  H01L2224/83851 ,  H01L2924/00013 ,  H01L2924/01029 ,  H01L2924/01322 ,  H01L2924/13064 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2224/83439 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/0132 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/0665 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2924/00

摘要： A manufacturing of a semiconductor device includes forming one of a layer with a first metal and the layer with a second metal on one of a semiconductor chip mounting area of a support plate and a back surface of the semiconductor chip; forming the other of the layer with the first metal and the layer with the second metal on an area corresponding to a part of the area, in which one of the layer with the first metal and the layer with the second metal, of the other one of the semiconductor chip mounting area and the back surface of the semiconductor chip; and forming a layer which includes an alloy with the first metal and the second metal after positioning the semiconductor chip in the semiconductor chip mounting area to bond the semiconductor chip with the semiconductor chip mounting area.

摘要翻译： 半导体器件的制造包括在支撑板的半导体芯片安装区域和半导体芯片的后表面中的一个上形成具有第一金属的层和具有第二金属的层; 在第一金属层和第二金属层之间形成与第一金属层和第二金属层之间的一个区域对应的区域的另一层 的半导体芯片安装区域和半导体芯片的背面; 以及在将所述半导体芯片定位在所述半导体芯片安装区域中之后，形成与所述第一金属和所述第二金属合金的层，以将半导体芯片与半导体芯片安装区域接合。

公开(公告)号：US08492784B2

公开(公告)日：2013-07-23

申请号：US13331090

申请日：2011-12-20

申请人： Keishiro Okamoto ,  Tadahiro Imada ,  Nobuhiro Imaizumi ,  Keiji Watanabe

发明人： Keishiro Okamoto ,  Tadahiro Imada ,  Nobuhiro Imaizumi ,  Keiji Watanabe

IPC分类号： H01L33/00

CPC分类号： H01L23/3135 ,  H01L23/3121 ,  H01L23/3142 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/0603 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/48472 ,  H01L2224/8592 ,  H01L2924/00014 ,  H01L2924/09701 ,  H01L2924/13064 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/85399 ,  H01L2224/05599

摘要： A semiconductor device includes: a semiconductor chip including a nitride semiconductor layered structure including a carrier transit layer and a carrier supply layer; a first resin layer on the semiconductor chip, the first resin layer including a coupling agent; a second resin layer on the first resin layer, the second resin layer including a surfactant; and a sealing resin layer to seal the semiconductor chip with the first resin layer and the second resin layer.

摘要翻译： 半导体器件包括：半导体芯片，其包括具有载流子迁移层和载流子供给层的氮化物半导体层叠结构; 在所述半导体芯片上的第一树脂层，所述第一树脂层包含偶联剂; 在第一树脂层上的第二树脂层，第二树脂层包括表面活性剂; 以及用第一树脂层和第二树脂层密封半导体芯片的密封树脂层。

公开(公告)号：US20120211764A1

公开(公告)日：2012-08-23

申请号：US13359855

申请日：2012-01-27

申请人： Keishiro OKAMOTO ,  Tadahiro IMADA ,  Nobuhiro IMAIZUMI ,  Keiji WATANABE

发明人： Keishiro OKAMOTO ,  Tadahiro IMADA ,  Nobuhiro IMAIZUMI ,  Keiji WATANABE

IPC分类号： H01L23/488 ,  H01L21/60 ,  H01L29/20

CPC分类号： H01L24/32 ,  H01L23/3121 ,  H01L23/49513 ,  H01L23/49568 ,  H01L24/06 ,  H01L24/27 ,  H01L24/29 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L2224/04042 ,  H01L2224/0603 ,  H01L2224/29083 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/29211 ,  H01L2224/29239 ,  H01L2224/29244 ,  H01L2224/29247 ,  H01L2224/29255 ,  H01L2224/29264 ,  H01L2224/29269 ,  H01L2224/29311 ,  H01L2224/29339 ,  H01L2224/29344 ,  H01L2224/29347 ,  H01L2224/29355 ,  H01L2224/29364 ,  H01L2224/29369 ,  H01L2224/29565 ,  H01L2224/2969 ,  H01L2224/3201 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/48472 ,  H01L2224/73265 ,  H01L2224/83051 ,  H01L2224/83192 ,  H01L2224/838 ,  H01L2224/83815 ,  H01L2224/8384 ,  H01L2224/83986 ,  H01L2224/92247 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/1033 ,  H01L2924/13055 ,  H01L2924/13064 ,  H01L2924/181 ,  H01L2924/351 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/01083 ,  H01L2924/3512

摘要： A semiconductor device includes: a support base material, and a semiconductor element bonded to the support base material with a binder, the binder including: a porous metal material that contacts the support base material and the semiconductor element, and a solder that is filled in at least one part of pores of the porous metal material.

摘要翻译： 半导体器件包括：支撑基底材料和用粘合剂粘合到支撑基底材料上的半导体元件，所述粘合剂包括：接触所述支撑基底材料和所述半导体元件的多孔金属材料，以及填充在所述基底材料中的焊料 多孔金属材料的孔的至少一部分。

公开(公告)号：US07816180B2

公开(公告)日：2010-10-19

申请号：US12403252

申请日：2009-03-12

申请人： Masataka Mizukoshi ,  Nobuhiro Imaizumi ,  Yoshikatsu Ishizuki

发明人： Masataka Mizukoshi ,  Nobuhiro Imaizumi ,  Yoshikatsu Ishizuki

IPC分类号： H01L21/58

CPC分类号： H01L24/13 ,  H01L21/563 ,  H01L24/02 ,  H01L24/06 ,  H01L24/11 ,  H01L24/16 ,  H01L2224/0401 ,  H01L2224/05578 ,  H01L2224/06102 ,  H01L2224/1134 ,  H01L2224/1147 ,  H01L2224/1184 ,  H01L2224/13028 ,  H01L2224/13082 ,  H01L2224/13144 ,  H01L2224/1357 ,  H01L2224/13639 ,  H01L2224/13644 ,  H01L2224/13664 ,  H01L2224/13669 ,  H01L2224/16106 ,  H01L2224/16225 ,  H01L2224/2784 ,  H01L2224/32225 ,  H01L2224/73104 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/8113 ,  H01L2224/81132 ,  H01L2224/81191 ,  H01L2224/83121 ,  H01L2224/83191 ,  H01L2224/83856 ,  H01L2924/00 ,  H01L2924/00013 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01043 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01056 ,  H01L2924/01057 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/13091 ,  H01L2924/19041 ,  Y10T29/49126 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2224/29099

摘要： The present invention realizes a semiconductor device of high reliability which allows metal terminals which have a uniform height, are flat and smooth to be formed under low load and at low costs and to be mounted with low damage. The electrodes 5 and the insulating film 6 are both formed of materials having the property that they are solid and do not exhibit the adhesiveness at room temperature and exhibit the adhesiveness at a temperature not lower than a first temperature and cure at a temperature not lower than a second temperature higher than the first temperature. The surfaces of the electrodes 5 and the insulating film 6 of a semiconductor chip 1a are planarized in continuously flat with a hard cutting tool, as of diamond or others.

摘要翻译： 本发明实现了一种高可靠性的半导体器件，其允许在低负载和低成本下形成具有均匀高度，平坦和平滑的金属端子并且以低损伤安装。 电极5和绝缘膜6均由具有固体特性的材料形成，并且在室温下不显示粘合性，并且在不低于第一温度的温度下显示粘附性，并且在不低于 第二温度高于第一温度。 半导体芯片1a的电极5和绝缘膜6的表面与硬质切削工具一样平坦化，如金刚石等。

公开(公告)号：US07811835B2

公开(公告)日：2010-10-12

申请号：US12403283

申请日：2009-03-12

申请人： Masataka Mizukoshi ,  Nobuhiro Imaizumi ,  Yoshikatsu Ishizuki

发明人： Masataka Mizukoshi ,  Nobuhiro Imaizumi ,  Yoshikatsu Ishizuki

IPC分类号： H01L21/58

CPC分类号： H01L24/13 ,  H01L21/563 ,  H01L24/02 ,  H01L24/06 ,  H01L24/11 ,  H01L24/16 ,  H01L2224/0401 ,  H01L2224/05578 ,  H01L2224/06102 ,  H01L2224/1134 ,  H01L2224/1147 ,  H01L2224/1184 ,  H01L2224/13028 ,  H01L2224/13082 ,  H01L2224/13144 ,  H01L2224/1357 ,  H01L2224/13639 ,  H01L2224/13644 ,  H01L2224/13664 ,  H01L2224/13669 ,  H01L2224/16106 ,  H01L2224/16225 ,  H01L2224/2784 ,  H01L2224/32225 ,  H01L2224/73104 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/8113 ,  H01L2224/81132 ,  H01L2224/81191 ,  H01L2224/83121 ,  H01L2224/83191 ,  H01L2224/83856 ,  H01L2924/00 ,  H01L2924/00013 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01043 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01056 ,  H01L2924/01057 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/13091 ,  H01L2924/19041 ,  Y10T29/49126 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2224/29099

摘要： The present invention realizes a semiconductor device of high reliability which allows metal terminals which have a uniform height, are flat and smooth to be formed under low load and at low costs and to be mounted with low damage. The electrodes 5 and the insulating film 6 are both formed of materials having the property that they are solid and do not exhibit the adhesiveness at room temperature and exhibit the adhesiveness at a temperature not lower than a first temperature and cure at a temperature not lower than a second temperature higher than the first temperature. The surfaces of the electrodes 5 and the insulating film 6 of a semiconductor chip 1a are planarized in continuously flat with a hard cutting tool, as of diamond or others.

摘要翻译： 本发明实现了一种高可靠性的半导体器件，其允许在低负载和低成本下形成具有均匀高度，平坦和平滑的金属端子并且以低损伤安装。 电极5和绝缘膜6均由具有固体特性的材料形成，并且在室温下不显示粘合性，并且在不低于第一温度的温度下显示粘附性，并且在不低于 第二温度高于第一温度。 半导体芯片1a的电极5和绝缘膜6的表面与硬质切削工具一样平坦化，如金刚石等。

公开(公告)号：US20090181497A1

公开(公告)日：2009-07-16

申请号：US12403283

申请日：2009-03-12

申请人： Masataka Mizukoshi ,  Nobuhiro Imaizumi ,  Yoshikatsu Ishizuki

发明人： Masataka Mizukoshi ,  Nobuhiro Imaizumi ,  Yoshikatsu Ishizuki

IPC分类号： H01L21/60

CPC分类号： H01L24/13 ,  H01L21/563 ,  H01L24/02 ,  H01L24/06 ,  H01L24/11 ,  H01L24/16 ,  H01L2224/0401 ,  H01L2224/05578 ,  H01L2224/06102 ,  H01L2224/1134 ,  H01L2224/1147 ,  H01L2224/1184 ,  H01L2224/13028 ,  H01L2224/13082 ,  H01L2224/13144 ,  H01L2224/1357 ,  H01L2224/13639 ,  H01L2224/13644 ,  H01L2224/13664 ,  H01L2224/13669 ,  H01L2224/16106 ,  H01L2224/16225 ,  H01L2224/2784 ,  H01L2224/32225 ,  H01L2224/73104 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/8113 ,  H01L2224/81132 ,  H01L2224/81191 ,  H01L2224/83121 ,  H01L2224/83191 ,  H01L2224/83856 ,  H01L2924/00 ,  H01L2924/00013 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01043 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01056 ,  H01L2924/01057 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/13091 ,  H01L2924/19041 ,  Y10T29/49126 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2224/29099

摘要： The present invention realizes a semiconductor device of high reliability which allows metal terminals which have a uniform height, are flat and smooth to be formed under low load and at low costs and to be mounted with low damage. The electrodes 5 and the insulating film 6 are both formed of materials having the property that they are solid and do not exhibit the adhesiveness at room temperature and exhibit the adhesiveness at a temperature not lower than a first temperature and cure at a temperature not lower than a second temperature higher than the first temperature. The surfaces of the electrodes 5 and the insulating film 6 of a semiconductor chip 1a are planarized in continuously flat with a hard cutting tool, as of diamond or others.

公开(公告)号：US06790881B2

公开(公告)日：2004-09-14

申请号：US10254538

申请日：2002-09-26

申请人： Hiroaki Date ,  Tomohisa Yagi ,  Makoto Sasaki ,  Hideshi Tokuhira ,  Nobuhiro Imaizumi

发明人： Hiroaki Date ,  Tomohisa Yagi ,  Makoto Sasaki ,  Hideshi Tokuhira ,  Nobuhiro Imaizumi

IPC分类号： C08K716

CPC分类号： C09J11/06

摘要： A single-liquid type adhesive composition contains a main agent, an imidazole serving as a hardener, and a hardening promoter for increased hardening speed. The imidazole has its surface covered by a thermoplastic resin, and the hardening promoter is provided by a modified imidazole composition with its imino group (—NH—) having the H replaced by a specific reaction retarder group.

摘要翻译： 单液型粘合剂组合物含有主剂，用作固化剂的咪唑和用于提高硬化速度的硬化促进剂。 咪唑的表面被热塑性树脂覆盖，并且硬化促进剂由改性咪唑组合物提供，其亚氨基（-NH-）具有被特定的反应延迟剂基取代的H。

公开(公告)号：US06670264B2

公开(公告)日：2003-12-30

申请号：US10124268

申请日：2002-04-18

申请人： Seiki Sakuyama ,  Nobuhiro Imaizumi ,  Tomohisa Yagi

发明人： Seiki Sakuyama ,  Nobuhiro Imaizumi ,  Tomohisa Yagi

IPC分类号： H01L2144

CPC分类号： H05K3/321 ,  H01L21/563 ,  H01L24/11 ,  H01L24/29 ,  H01L24/32 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/1147 ,  H01L2224/1148 ,  H01L2224/13099 ,  H01L2224/16225 ,  H01L2224/29011 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/73103 ,  H01L2224/73104 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01016 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01084 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/15787 ,  H05K3/3436 ,  H05K3/3473 ,  H05K3/3484 ,  H05K2201/0209 ,  H05K2201/10977 ,  H05K2203/043 ,  H05K2203/054 ,  H05K2203/0568 ,  H01L2924/00 ,  H01L2924/01083 ,  H01L2224/13111 ,  H01L2924/00014 ,  H01L2924/3512 ,  H01L2924/00012

摘要： A process of making an electrode-to-electrode bond structure includes a step of forming a resin coating on a first bonding object having a first electrode portion in a manner such that the resin coating covers the first electrode portion. Then, an opening is formed in the resin coating to expose the first electrode portion. Then, the opening is filled with a metal paste containing a metal and a resin component. Then, the first bonding object is placed on a second bonding object having a second electrode portion in a manner such that the metal paste filled in the opening faces the second electrode portion while the resin coating contacts the second bonding object. Finally, heat-treatment is performed to cause the first electrode portion and the second electrode portion to be electrically connected with each other via the metal while causing the resin coating to harden.

公开(公告)号：US08673762B2

公开(公告)日：2014-03-18

申请号：US13313349

申请日：2011-12-07

申请人： Toshiya Akamatsu ,  Nobuhiro Imaizumi ,  Seiki Sakuyama ,  Keisuke Uenishi ,  Tetsuhiro Nakanishi

发明人： Toshiya Akamatsu ,  Nobuhiro Imaizumi ,  Seiki Sakuyama ,  Keisuke Uenishi ,  Tetsuhiro Nakanishi

IPC分类号： H01L21/44

CPC分类号： H05K3/3463 ,  B23K35/0244 ,  B23K35/262 ,  B23K35/264 ,  B23K2101/36 ,  B23K2101/40 ,  C22C12/00 ,  C22C13/00 ,  C22C30/04 ,  C22C30/06 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/13099 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16506 ,  H01L2224/81065 ,  H01L2224/81097 ,  H01L2224/81192 ,  H01L2224/81211 ,  H01L2224/81805 ,  H01L2224/81815 ,  H01L2924/00013 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01051 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/15311 ,  Y10T428/12708 ,  H01L2924/01083 ,  H01L2924/0105 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599

摘要： A solder includes Sn (tin), Bi (bismuth) and Zn (zinc), wherein the solder has a Zn content of 0.01% by weight to 0.1% by weight.

摘要翻译： 焊料包括Sn（锡），Bi（铋）和Zn（锌），其中焊料的Zn含量为0.01重量％至0.1重量％。

公开(公告)号：US08409931B2

公开(公告)日：2013-04-02

申请号：US13404521

申请日：2012-02-24

申请人： Taiji Sakai ,  Nobuhiro Imaizumi ,  Masataka Mizukoshi

发明人： Taiji Sakai ,  Nobuhiro Imaizumi ,  Masataka Mizukoshi

IPC分类号： H01L21/60

CPC分类号： H01L24/81 ,  H01L24/11 ,  H01L24/13 ,  H01L24/75 ,  H01L2224/11013 ,  H01L2224/1184 ,  H01L2224/13111 ,  H01L2224/13124 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/16225 ,  H01L2224/16245 ,  H01L2224/75101 ,  H01L2224/81065 ,  H01L2224/81075 ,  H01L2224/81191 ,  H01L2224/81193 ,  H01L2224/81203 ,  H01L2224/8183 ,  H01L2224/83192 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/13064 ,  H01L2924/00014 ,  H01L2924/00

摘要： A method of manufacturing a semiconductor device includes: forming a first layer including crystals by processing a surface of a first electrode of a semiconductor element; forming a second layer including crystals by processing a surface of a second electrode of a mounting member on which the semiconductor element is mounted; reducing a first oxide film present over or in the first layer and a second oxide film present over or in the second layer at a first temperature, the first temperature being lower than a second temperature at which a first metal included in the first electrode diffuses in a solid state and being lower than a third temperature at which a second metal included in the second electrode diffuses in a solid state; and bonding the first layer and the second layer to each other by solid-phase diffusion.

摘要翻译： 一种制造半导体器件的方法包括：通过处理半导体元件的第一电极的表面，形成包括晶体的第一层; 通过加工其上安装有半导体元件的安装构件的第二电极的表面，形成包括晶体的第二层; 在第一温度下减少存在于第一层上或第一层中的第一氧化物膜和存在于第二层中或第二层中的第二氧化物膜，第一温度低于包含在第一电极中的第一金属扩散的第二温度 并且低于包含在第二电极中的第二金属以固态扩散的第三温度; 以及通过固相扩散将第一层和第二层彼此结合。