公开(公告)号：US20120211764A1

公开(公告)日：2012-08-23

申请号：US13359855

申请日：2012-01-27

申请人： Keishiro OKAMOTO ,  Tadahiro IMADA ,  Nobuhiro IMAIZUMI ,  Keiji WATANABE

发明人： Keishiro OKAMOTO ,  Tadahiro IMADA ,  Nobuhiro IMAIZUMI ,  Keiji WATANABE

IPC分类号： H01L23/488 ,  H01L21/60 ,  H01L29/20

CPC分类号： H01L24/32 ,  H01L23/3121 ,  H01L23/49513 ,  H01L23/49568 ,  H01L24/06 ,  H01L24/27 ,  H01L24/29 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L2224/04042 ,  H01L2224/0603 ,  H01L2224/29083 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/29211 ,  H01L2224/29239 ,  H01L2224/29244 ,  H01L2224/29247 ,  H01L2224/29255 ,  H01L2224/29264 ,  H01L2224/29269 ,  H01L2224/29311 ,  H01L2224/29339 ,  H01L2224/29344 ,  H01L2224/29347 ,  H01L2224/29355 ,  H01L2224/29364 ,  H01L2224/29369 ,  H01L2224/29565 ,  H01L2224/2969 ,  H01L2224/3201 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/48472 ,  H01L2224/73265 ,  H01L2224/83051 ,  H01L2224/83192 ,  H01L2224/838 ,  H01L2224/83815 ,  H01L2224/8384 ,  H01L2224/83986 ,  H01L2224/92247 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/1033 ,  H01L2924/13055 ,  H01L2924/13064 ,  H01L2924/181 ,  H01L2924/351 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/01083 ,  H01L2924/3512

摘要： A semiconductor device includes: a support base material, and a semiconductor element bonded to the support base material with a binder, the binder including: a porous metal material that contacts the support base material and the semiconductor element, and a solder that is filled in at least one part of pores of the porous metal material.

摘要翻译： 半导体器件包括：支撑基底材料和用粘合剂粘合到支撑基底材料上的半导体元件，所述粘合剂包括：接触所述支撑基底材料和所述半导体元件的多孔金属材料，以及填充在所述基底材料中的焊料 多孔金属材料的孔的至少一部分。

公开(公告)号：US20120211762A1

公开(公告)日：2012-08-23

申请号：US13334766

申请日：2011-12-22

申请人： Tadahiro IMADA ,  Keishiro Okamoto ,  Nobuhiro Imaizumi ,  Toshihide Kikkawa

发明人： Tadahiro IMADA ,  Keishiro Okamoto ,  Nobuhiro Imaizumi ,  Toshihide Kikkawa

IPC分类号： H01L29/778 ,  H01L21/56 ,  H01L23/48 ,  H01L29/20

CPC分类号： H01L29/7787 ,  H01L23/3107 ,  H01L23/4952 ,  H01L23/49562 ,  H01L24/06 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/85 ,  H01L29/41766 ,  H01L29/66462 ,  H01L2224/04042 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/0603 ,  H01L2224/45014 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/48472 ,  H01L2224/48599 ,  H01L2224/48699 ,  H01L2224/49 ,  H01L2224/8592 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01049 ,  H01L2924/01073 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/1033 ,  H01L2924/10344 ,  H01L2924/1306 ,  H01L2924/13064 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/206

摘要： A semiconductor device includes: a semiconductor chip having an electrode; a lead corresponding to the electrode; a metal line coupling the electrode to the lead; a first resin portion covering a coupling portion between the metal line and the electrode and a coupling portion between the metal line and the lead; and a second resin portion covering the metal line, the first resin portion, and the semiconductor chip.

摘要翻译： 半导体器件包括：具有电极的半导体芯片; 对应于电极的引线; 将电极耦合到引线的金属线; 覆盖金属线和电极之间的耦合部分的第一树脂部分和金属线与引线之间的耦合部分; 以及覆盖金属线，第一树脂部分和半导体芯片的第二树脂部分。

公开(公告)号：US20130062666A1

公开(公告)日：2013-03-14

申请号：US13557322

申请日：2012-07-25

申请人： Tadahiro IMADA

发明人： Tadahiro IMADA

IPC分类号： H01L29/778 ,  H01L21/335 ,  H01L29/10

CPC分类号： H01L29/7787 ,  H01L29/0619 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/207 ,  H01L29/452 ,  H01L29/66212 ,  H01L29/66462 ,  H01L29/66909 ,  H01L29/8083 ,  H01L29/872 ,  H01L2224/05553 ,  H01L2224/0603 ,  H01L2224/48245 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2924/12032 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012

摘要： A compound semiconductor device includes a substrate; and a compound semiconductor layer disposed over the substrate, wherein the compound semiconductor layer includes a first region having first conductivity-type carriers generated by activating a first impurity and also includes a second region having carriers at lower concentration as compared to the first region, the carriers being generated by activating a second impurity which is the same type as the first impurity.

摘要翻译： 化合物半导体器件包括：衬底; 以及设置在所述基板上的化合物半导体层，其中所述化合物半导体层包括具有通过激活第一杂质而产生的第一导电型载流子的第一区域，并且还包括与所述第一区域相比具有较低浓度的载流子的第二区域， 通过激活与第一杂质相同类型的第二杂质产生载体。

公开(公告)号：US20120104408A1

公开(公告)日：2012-05-03

申请号：US13208779

申请日：2011-08-12

申请人： Tadahiro IMADA

发明人： Tadahiro IMADA

IPC分类号： H01L29/778 ,  H01L21/335 ,  H01L29/20

CPC分类号： H01L29/7787 ,  H01L21/8252 ,  H01L27/0605 ,  H01L29/1029 ,  H01L29/2003 ,  H01L29/66462

摘要： In an aspect of a semiconductor device, there are provided a substrate, a transistor including an electron transit layer and an electron supply layer formed over the substrate, a nitride semiconductor layer formed over the substrate and connected to a gate of the transistor, and a controller controlling electric charges moving in the nitride semiconductor layer.

摘要翻译： 在半导体器件的一个方面，提供了一种衬底，包括形成在衬底上的电子转移层和电子供给层的晶体管，形成在衬底上并连接到晶体管的栅极的氮化物半导体层，以及 控制器控制在氮化物半导体层中移动的电荷。

公开(公告)号：US20080206999A1

公开(公告)日：2008-08-28

申请号：US12035832

申请日：2008-02-22

申请人： Tadahiro IMADA ,  Yoshihiro NAKATA ,  Koji NOZAKI

发明人： Tadahiro IMADA ,  Yoshihiro NAKATA ,  Koji NOZAKI

IPC分类号： H01L21/311

CPC分类号： H01L21/67086 ,  H01L21/31111 ,  H01L21/31133 ,  H01L21/3143 ,  H01L21/31612 ,  H01L21/31633 ,  H01L21/6708 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76825

摘要： A wet etching method that includes forming an insulating film on a substrate, and irradiating laser light to the insulating film during wet etching of the insulating film using an etching solution.

摘要翻译： 一种湿式蚀刻方法，其包括在基板上形成绝缘膜，并且在使用蚀刻溶液湿式蚀刻绝缘膜期间，将绝缘膜照射激光。

公开(公告)号：US20110193096A1

公开(公告)日：2011-08-11

申请号：US13091322

申请日：2011-04-21

申请人： Tadahiro IMADA

发明人： Tadahiro IMADA

IPC分类号： H01L29/205 ,  H01L21/338 ,  B82Y99/00 ,  B82Y40/00

CPC分类号： H01L29/0843 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02636 ,  H01L29/0649 ,  H01L29/0696 ,  H01L29/1075 ,  H01L29/2003 ,  H01L29/267 ,  H01L29/402 ,  H01L29/66462 ,  H01L29/7787 ,  H01L29/7788

摘要： An n-type GaN layer (3), a GaN layer (7) formed over the n-type GaN layer (3), an n-type AlGaN layer (9) formed over the GaN layer (7), a gate electrode (15) and a source electrode (13) formed over the n-type AlGaN layer (9), a drain electrode (14) formed below the n-type GaN layer (3), and a p-type GaN layer (4) formed between the GaN layer (7) and the drain electrode (14) are provided.

摘要翻译： n型GaN层（3），形成在n型GaN层（3）上的GaN层（7），形成在GaN层（7）上的n型AlGaN层（9），栅电极 15）和形成在n型AlGaN层（9）上的源电极（13），形成在n型GaN层（3）下面的漏电极（14）和形成的p型GaN层（4） 提供GaN层（7）和漏电极（14）之间。

公开(公告)号：US20090061633A1

公开(公告)日：2009-03-05

申请号：US12199297

申请日：2008-08-27

申请人： Yoshihiro NAKATA ,  Tadahiro IMADA ,  Shirou OZAKI ,  Yasushi KOBAYASHI ,  Kohta YOSHIKAWA ,  Ei YANO

发明人： Yoshihiro NAKATA ,  Tadahiro IMADA ,  Shirou OZAKI ,  Yasushi KOBAYASHI ,  Kohta YOSHIKAWA ,  Ei YANO

IPC分类号： H01L21/311

CPC分类号： H01L21/3105 ,  H01L21/76807 ,  H01L21/76814 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76883

摘要： According to an aspect of an embodiment, a method of manufacturing a semiconductor device has forming an insulating layer comprising silica-based insulating material, processing the insulating layer, hydrophobizing the insulating layer by applying a silane compound to act on the insulating layer; and irradiating the insulating layer with light or an electron beam.

摘要翻译： 根据实施例的一个方面，制造半导体器件的方法具有：形成包含二氧化硅基绝缘材料的绝缘层，加工绝缘层，通过施加硅烷化合物作用在绝缘层上使绝缘层疏水化; 并用光或电子束照射绝缘层。

公开(公告)号：US20120218783A1

公开(公告)日：2012-08-30

申请号：US13326533

申请日：2011-12-15

申请人： Tadahiro IMADA

发明人： Tadahiro IMADA

IPC分类号： H02M3/335 ,  H01L29/20 ,  H03F3/16 ,  H01L21/44 ,  H01L21/20 ,  H01L29/12 ,  H01L29/78

CPC分类号： H01L29/7787 ,  H01L29/0619 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/42356 ,  H01L29/452 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66462 ,  H01L29/861 ,  H01L2224/0603 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/4903 ,  H01L2924/181 ,  H01L2924/00012

摘要： There is embodied a high-reliability high-voltage resistance compound semiconductor device capable of improving the speed of device operation, being high in avalanche resistance, being resistant to surges, eliminating the need to connect any external diodes when applied to, for example, an inverter circuit, and achieving stable operation even if holes are produced, in addition to alleviating the concentration of electric fields on a gate electrode and thereby realizing a further improvement in voltage resistance. A gate electrode is formed so as to fill an electrode recess formed in a structure of stacked compound semiconductors with an electrode material through a gate insulation film, and a field plate recess formed in the structure of stacked compound semiconductors is filled with a p-type semiconductor, thereby forming a field plate the p-type semiconductor layer of which has contact with the structure of stacked compound semiconductors.

摘要翻译： 具有能够提高装置运转速度，耐雪崩性高，耐浪涌性的高可靠性高压电阻化合物半导体装置，不需要连接任何外部二极管，例如应用于 逆变器电路，并且即使产生空穴也能够实现稳定的动作，除了减轻栅极电场的浓度以外，进一步提高耐电压性。 形成栅电极，以通过栅极绝缘膜填充由电极材料形成的叠层化合物半导体结构的电极凹槽，并且在堆叠的化合物半导体的结构中形成的场板凹槽填充有p型 从而形成其p型半导体层与堆叠的化合物半导体的结构接触的场板。

公开(公告)号：US20130082336A1

公开(公告)日：2013-04-04

申请号：US13552883

申请日：2012-07-19

申请人： Tadahiro IMADA

发明人： Tadahiro IMADA

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/0619 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/7787

摘要： An AlGaN/GaN HEMT includes a compound semiconductor multilayer structure, an insertion metal layer in contact with a surface of the compound semiconductor multilayer structure, a gate insulating film formed on the insertion metal layer, and a gate electrode formed above the insertion metal layer with the gate insulating film between the gate electrode and the insertion metal layer.

摘要翻译： AlGaN / GaN HEMT包括化合物半导体多层结构，与化合物半导体多层结构的表面接触的插入金属层，形成在插入金属层上的栅极绝缘膜，以及形成在插入金属层上方的栅电极， 栅电极和插入金属层之间的栅极绝缘膜。

公开(公告)号：US20120220089A1

公开(公告)日：2012-08-30

申请号：US13325972

申请日：2011-12-14

申请人： Tadahiro IMADA ,  Toshihide Kikkawa

发明人： Tadahiro IMADA ,  Toshihide Kikkawa

IPC分类号： H01L21/336 ,  H02J3/36 ,  H03F3/16 ,  H01L29/78

CPC分类号： H01L29/7787 ,  H01L29/0619 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/4236 ,  H01L29/66462 ,  H01L2224/0603 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2924/181 ,  H03F1/3247 ,  H03F1/523 ,  H03F3/189 ,  H03F3/24 ,  H03F2200/204 ,  H03F2200/426 ,  H03F2200/444 ,  H03F2200/451 ,  H01L2924/00 ,  H01L2924/00012

摘要： A gate electrode is formed so as to embed an electrode material in a recess for an electrode, which has been formed in a structure of stacked compound semiconductors, through a gate insulation film, and also a field plate electrode that comes in Schottky contact with the structure of the stacked compound semiconductors is formed by embedding an electrode material in a recess for an electrode, which has been formed in the structure of the stacked compound semiconductors so that the field plate electrode directly comes in contact with the structure of the stacked compound semiconductors at least on the bottom face of the recess for the electrode.

摘要翻译： 形成栅电极，以便通过栅极绝缘膜将电极材料嵌入已形成为叠层化合物半导体的结构的电极用凹部中，并且还形成与电极的肖特基接触的场板电极 堆叠的化合物半导体的结构通过将电极材料嵌入到在层叠的化合物半导体的结构中形成的电极的凹部中而形成，使得场板电极直接与堆叠的化合物半导体的结构接触 至少在用于电极的凹槽的底面上。