SEMICONDUCTOR DEVICE WITH REDISTRIBUTED CONTACTS
    3.
    发明申请
    SEMICONDUCTOR DEVICE WITH REDISTRIBUTED CONTACTS 有权
    具有重新分配联系的半导体器件

    公开(公告)号:US20130341796A1

    公开(公告)日:2013-12-26

    申请号:US13530118

    申请日:2012-06-22

    IPC分类号: H01L23/528 H01L21/78

    摘要: A semiconductor device has external, exposed electrical contacts at an device active face and a semiconductor die, which has internal, electrical contacts at a die active face. The exposed contacts are offset from the internal contacts laterally of the device active face. A redistribution layer includes a layer of insulating material and redistribution interconnectors within the insulating material, the interconnectors connecting with the exposed contacts. A set of conductors connect the internal contacts and the interconnectors. The conductors have oblong, tear drop shaped cross-sections extending laterally of the die active face beyond the respective internal contacts, and contact the interconnectors at positions spaced further apart than the internal contacts. The redistribution layer may be prefabricated using less costly manufacturing techniques such as lamination.

    摘要翻译: 半导体器件在器件主动面和半导体管芯处具有外部暴露的电触头,半导体管芯在管芯主动面处具有内部电接触。 暴露的触点从设备主动面侧面的内部触点偏移。 再分配层包括绝缘材料层和绝缘材料内的再分配互连器,该连接器与暴露的触点连接。 一组导体连接内部触点和互连器。 导体具有长圆形的泪滴形横截面,其横向延伸到模具主动面的外侧,超过相应的内部触点,并且在相互间隔开的位置处与互连器接触。 可以使用较便宜的制造技术(例如层压)来预制再分布层。