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1.Electronic devices having metallurgies containing copper-semiconductor compounds 失效
标题翻译: 具有包含铜半导体化合物的冶金的电子器件公开(公告)号:US5855993A
公开(公告)日:1999-01-05
申请号:US200811
申请日:1994-02-22
申请人: Michael John Brady , Curtis Edward Farrell , Sung Kwon Kang , Jeffrey Robert Marino , Donald Joseph Mikalsen , Paul Andrew Moskowitz , Eugene John O'Sullivan , Terrence Robert O'Toole , Sampath Purushothaman , Sheldon Cole Rieley , George Frederick Walker
发明人: Michael John Brady , Curtis Edward Farrell , Sung Kwon Kang , Jeffrey Robert Marino , Donald Joseph Mikalsen , Paul Andrew Moskowitz , Eugene John O'Sullivan , Terrence Robert O'Toole , Sampath Purushothaman , Sheldon Cole Rieley , George Frederick Walker
IPC分类号: H01L21/60 , C23C18/50 , C25D3/54 , H01L21/288 , H01L21/603 , H01L21/768 , H01L23/495 , H01L23/498 , H01L23/532 , B32B3/00 , B23K35/14 , H01L23/48
CPC分类号: H01L23/53271 , C23C18/50 , C25D3/54 , H01L21/288 , H01L21/2885 , H01L21/6835 , H01L21/76838 , H01L23/4951 , H01L23/4985 , H01L23/49872 , H01L24/05 , H01L24/97 , H01L2224/02126 , H01L2224/0347 , H01L2224/0401 , H01L2224/04042 , H01L2224/04073 , H01L2224/05022 , H01L2224/05027 , H01L2224/0508 , H01L2224/051 , H01L2224/05147 , H01L2224/05166 , H01L2224/05171 , H01L2224/05572 , H01L2224/05609 , H01L2224/05611 , H01L2224/05616 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/10126 , H01L2224/1145 , H01L2224/13022 , H01L2224/13101 , H01L2224/13105 , H01L2224/13109 , H01L2224/13111 , H01L2224/13113 , H01L2224/13116 , H01L2224/13118 , H01L2224/1312 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/2919 , H01L2224/3015 , H01L2224/32245 , H01L2224/45101 , H01L2224/45124 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/45155 , H01L2224/48091 , H01L2224/48247 , H01L2224/4826 , H01L2224/48465 , H01L2224/4847 , H01L2224/48609 , H01L2224/48611 , H01L2224/48616 , H01L2224/48624 , H01L2224/48639 , H01L2224/48644 , H01L2224/48647 , H01L2224/48709 , H01L2224/48711 , H01L2224/48716 , H01L2224/48724 , H01L2224/48739 , H01L2224/48744 , H01L2224/48747 , H01L2224/48809 , H01L2224/48811 , H01L2224/48816 , H01L2224/48839 , H01L2224/48844 , H01L2224/48847 , H01L2224/73215 , H01L2224/85001 , H01L2224/85201 , H01L2224/85203 , H01L2224/85205 , H01L2224/85214 , H01L2224/92147 , H01L24/03 , H01L24/13 , H01L24/45 , H01L24/48 , H01L24/85 , H01L2924/00014 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01011 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01031 , H01L2924/01032 , H01L2924/01033 , H01L2924/01042 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/01058 , H01L2924/0106 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01083 , H01L2924/01327 , H01L2924/014 , H01L2924/05042 , H01L2924/09701 , H01L2924/10253 , H01L2924/10329 , H01L2924/12032 , H01L2924/12033 , H01L2924/12042 , H01L2924/14 , H01L2924/15747 , H01L2924/15787 , H01L2924/181 , H01L2924/30105 , H01L2924/3011 , Y10S428/901 , Y10T428/24917
摘要: Silicon and germanium containing materials are used at surface of conductors in electronic devices. Solder can be fluxlessly bonded and wires can be wire bonded to these surfaces. These material are used as a surface coating for lead frames for packaging integrated circuit chips. These materials can be decal transferred onto conductor surfaces or electrolessly or electrolytically disposed thereon.
摘要翻译: 在电子设备中的导体的表面使用含锗和锗的材料。 焊料可无焊接,电线可以与这些表面引线接合。 这些材料用作用于封装集成电路芯片的引线框架的表面涂层。 这些材料可以贴花地转移到导体表面上,或者无电解或电解地放置在其上。
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2.Cobalt-tin alloys and their applications for devices, chip interconnections and packaging 失效
标题翻译: 钴锡合金及其在器件,芯片互连和封装中的应用公开(公告)号:US5755859A
公开(公告)日:1998-05-26
申请号:US518903
申请日:1995-08-24
申请人: Vlasta A. Brusic , Jeffrey Robert Marino , Eugene John O'Sullivan , Carlos Juan Sambucetti , Alejandro Gabriel Schrott , Cyprian Emeka Uzoh
发明人: Vlasta A. Brusic , Jeffrey Robert Marino , Eugene John O'Sullivan , Carlos Juan Sambucetti , Alejandro Gabriel Schrott , Cyprian Emeka Uzoh
CPC分类号: H01L24/11 , C23C18/50 , H01L2224/0401 , H01L2224/05624 , H01L2224/05647 , H01L2224/13099 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2924/01005 , H01L2924/01006 , H01L2924/01011 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/0105 , H01L2924/01073 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/01327 , H01L2924/014 , H01L2924/04953 , H01L2924/10253 , H01L2924/15747 , H05K3/244
摘要: A process for electrolessly depositing cobalt-tin alloys with adjustable tin contents from 1 to over 25 atomic percent tin is disclosed. The deposited alloy is useful in the electronics and computer industries for device, chip interconnection and packaging applications. When used for chip interconnection applications, for example, the invention replaces the currently used complicated ball-limiting-metallurgy. The invention may also be used to inhibit hillock formation and electromigration in copper wire structures found in computers and micron dimension electronic devices.
摘要翻译: 公开了一种用于无电沉积具有可调锡含量从1至超过25原子%的锡的钴锡合金的方法。 沉积的合金在电子和计算机工业中可用于器件,芯片互连和封装应用。 当用于芯片互连应用时,例如,本发明替代了目前使用的复杂的限制 - 限制冶金技术。 本发明还可以用于抑制计算机和微米尺寸电子设备中发现的铜线结构中的小丘形成和电迁移。
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