公开(公告)号：US08999764B2

公开(公告)日：2015-04-07

申请号：US11836819

申请日：2007-08-10

申请人： Mukta G. Farooq ,  Ian D. Melville ,  Kevin S. Petrarca ,  Kenneth P. Rodbell

发明人： Mukta G. Farooq ,  Ian D. Melville ,  Kevin S. Petrarca ,  Kenneth P. Rodbell

IPC分类号： H01L21/00 ,  H01L23/532 ,  H01L23/556

CPC分类号： H01L23/5329 ,  H01L23/556 ,  H01L2924/0002 ,  Y10S438/958 ,  Y10S438/967 ,  H01L2924/00

摘要： Methods of blocking ionizing radiation to reduce soft errors and resulting IC chips are disclosed. One embodiment includes forming a front end of line (FEOL) for an integrated circuit (IC) chip; and forming at least one back end of line (BEOL) dielectric layer including ionizing radiation blocking material therein. Another embodiment includes forming a front end of line (FEOL) for an integrated circuit (IC) chip; and forming an ionizing radiation blocking layer positioned in a back end of line (BEOL) of the IC chip. The ionizing radiation blocking material or layer absorbs ionizing radiation and reduces soft errors within the IC chip.

摘要翻译： 公开了阻止电离辐射以减少软错误的方法和产生的IC芯片。 一个实施例包括形成用于集成电路（IC）芯片的线路前端（FEOL）; 以及在其中形成包括其中的电离辐射阻挡材料的至少一个后端线（BEOL）电介质层。 另一实施例包括形成用于集成电路（IC）芯片的线路前端（FEOL）; 以及形成位于IC芯片的后端（BEOL）的电离辐射阻挡层。 电离辐射阻挡材料或层吸收电离辐射并减少IC芯片内的软误差。

公开(公告)号：US08679611B2

公开(公告)日：2014-03-25

申请号：US13556369

申请日：2012-07-24

申请人： Mukta G. Farooq ,  Emily Kinser ,  Richard S. Wise ,  Hakeem B. S. Akinmade-Yusuff

发明人： Mukta G. Farooq ,  Emily Kinser ,  Richard S. Wise ,  Hakeem B. S. Akinmade-Yusuff

IPC分类号： B32B3/02 ,  B29C65/48

CPC分类号： H01L21/02263 ,  H01L21/187 ,  H01L21/76898 ,  H01L25/074 ,  H01L25/50 ,  H01L2924/0002 ,  H01L2924/00

摘要： A dielectric material layer is deposited on exposed surfaces of a bonded structure that includes a first substrate and a second substrate. The dielectric material layer is formed on an exposed planar surface of a second substrate and the entirety of peripheral sidewalls of the first and second substrates. The dielectric material layer can be formed by chemical vapor deposition, atomic layer deposition, or plasma induced deposition. Further, the dielectric material layer seals the entire periphery of the interface between the first and second substrates. If a planar portion of the dielectric material layer can be removed by planarization to facilitate thinning of the bonded structure, the remaining portion of the dielectric material layer can form a dielectric ring.

摘要翻译： 介电材料层沉积在包括第一基板和第二基板的接合结构的暴露表面上。 介电材料层形成在第二基板的暴露的平坦表面和第一和第二基板的整个周边侧壁上。 介电材料层可以通过化学气相沉积，原子层沉积或等离子体诱导沉积形成。 此外，介电材料层密封第一和第二基板之间的界面的整个周边。 如果可以通过平坦化去除电介质材料层的平面部分以便于键合结构的薄化，则介电材料层的剩余部分可以形成介电环。

公开(公告)号：US08664081B2

公开(公告)日：2014-03-04

申请号：US13572037

申请日：2012-08-10

申请人： Mukta G. Farooq ,  Robert Hannon ,  Subramanian S. Iyer ,  Steven J. Koester ,  Fei Liu ,  Sampath Purushothaman ,  Albert M. Young ,  Roy R. Yu

发明人： Mukta G. Farooq ,  Robert Hannon ,  Subramanian S. Iyer ,  Steven J. Koester ,  Fei Liu ,  Sampath Purushothaman ,  Albert M. Young ,  Roy R. Yu

IPC分类号： H01L21/30

CPC分类号： H01L25/0657 ,  H01L21/6835 ,  H01L25/18 ,  H01L25/50 ,  H01L2221/68377 ,  H01L2224/0401 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05009 ,  H01L2224/05024 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05558 ,  H01L2224/05568 ,  H01L2224/0557 ,  H01L2224/056 ,  H01L2224/131 ,  H01L2224/16227 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/33181 ,  H01L2224/73153 ,  H01L2224/73253 ,  H01L2224/83121 ,  H01L2224/83895 ,  H01L2224/92242 ,  H01L2224/94 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2225/06593 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/1431 ,  H01L2924/1433 ,  H01L2924/1434 ,  H01L2924/1436 ,  H01L2924/1437 ,  H01L2924/15311 ,  H01L2924/157 ,  H01L2924/37001 ,  H01L2224/83 ,  H01L2224/11 ,  H01L2924/014 ,  H01L2924/00014

摘要： A computer readable medium is provided that is encoded with a program comprising instructions for performing a method for fabricating a 3D integrated circuit structure. Provided are an interface wafer including a first wiring layer and through-silicon vias, and a first active circuitry layer wafer including active circuitry. The first active circuitry layer wafer is bonded to the interface wafer. Then, a first portion of the first active circuitry layer wafer is removed such that a second portion remains attached to the interface wafer. A stack structure including the interface wafer and the second portion of the first active circuitry layer wafer is bonded to a base wafer. Next, the interface wafer is thinned so as to form an interface layer, and metallizations coupled through the through-silicon vias in the interface layer to the first wiring layer are formed on the interface layer.

摘要翻译： 提供了一种计算机可读介质，其由包括用于执行制造3D集成电路结构的方法的指令的程序编码。 提供了包括第一布线层和穿硅通孔的接口晶片，以及包括有源电路的第一有源电路层晶片。 第一有源电路层晶片被结合到界面晶片。 然后，去除第一有源电路层晶片的第一部分，使得第二部分保持附着到界面晶片。 包括接口晶片和第一有源电路层晶片的第二部分的堆叠结构被结合到基底晶片。 接下来，将界面晶片减薄以形成界面层，并且在界面层上形成通过界面层中的穿硅通孔耦合到第一布线层的金属化。

公开(公告)号：US20130334691A1

公开(公告)日：2013-12-19

申请号：US13525823

申请日：2012-06-18

申请人： Mukta G. Farooq ,  John A. Fitzsimmons ,  Troy L. Graves-Abe

发明人： Mukta G. Farooq ,  John A. Fitzsimmons ,  Troy L. Graves-Abe

IPC分类号： H01L23/52 ,  H01L21/283

CPC分类号： H05K3/423 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76858 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/53209 ,  H01L23/53214 ,  H01L23/53238 ,  H01L23/53242 ,  H01L23/53257 ,  H01L2924/0002 ,  Y10T428/12764 ,  H01L2924/00

摘要： A structure formed in an opening having a substantially vertical sidewall defined by a non-metallic material and having a substantially horizontal bottom defined by a conductive pad, the structure including a diffusion barrier covering the sidewall and a fill composed of conductive material. The structure including a first intermetallic compound separating the diffusion barrier from the conductive material, the first intermetallic compound comprises an alloying material and the conductive material, and is mechanically bound to the conductive material, the alloying material is at least one of the materials selected from the group of chromium, tin, nickel, magnesium, cobalt, aluminum, manganese, titanium, zirconium, indium, palladium, and silver; and a first high friction interface located between the diffusion barrier and the first intermetallic compound and parallel to the sidewall of the opening, wherein the first high friction interface results in a mechanical bond between the diffusion barrier and the first intermetallic compound.

摘要翻译： 一种形成在开口中的结构，其具有由非金属材料限定的基本上垂直的侧壁，并且具有由导电垫限定的基本上水平的底部，该结构包括覆盖侧壁的扩散阻挡层和由导电材料构成的填充物。 所述结构包括将所述扩散阻挡物与所述导电材料分离的第一金属间化合物，所述第一金属间化合物包括合金材料和所述导电材料，并且机械地结合到所述导电材料上，所述合金材料是选自以下的至少一种材料： 铬，锡，镍，镁，钴，铝，锰，钛，锆，铟，钯和银的组合; 以及位于所述扩散阻挡层和所述第一金属间化合物之间且平行于所述开口的侧壁的第一高摩擦界面，其中所述第一高摩擦界面导致所述扩散阻挡层和所述第一金属间化合物之间的机械结合。

公开(公告)号：US08546961B2

公开(公告)日：2013-10-01

申请号：US12987202

申请日：2011-01-10

申请人： Mukta G. Farooq ,  Troy L. Graves-Abe ,  Robert Hannon ,  Emily R. Kinser ,  William F. Landers ,  Kevin S. Petrarca ,  Richard P. Volant ,  Kevin R. Winstel

发明人： Mukta G. Farooq ,  Troy L. Graves-Abe ,  Robert Hannon ,  Emily R. Kinser ,  William F. Landers ,  Kevin S. Petrarca ,  Richard P. Volant ,  Kevin R. Winstel

IPC分类号： H01L23/544 ,  H01L21/02

CPC分类号： H01L21/76898 ,  H01L21/8221 ,  H01L23/544 ,  H01L24/83 ,  H01L24/92 ,  H01L24/94 ,  H01L25/0657 ,  H01L2223/54426 ,  H01L2224/29187 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/8385 ,  H01L2224/83896 ,  H01L2224/9202 ,  H01L2224/94 ,  H01L2225/06541 ,  H01L2225/06593 ,  H01L2924/14 ,  H01L2924/1431 ,  H01L2924/1434 ,  H01L2924/1436 ,  H01L2224/83

摘要： Disclosed are a structure including alignment marks and a method of forming alignment marks in three dimensional (3D) structures. The method includes forming apertures in a first surface of a first semiconductor substrate; joining the first surface of the first semiconductor substrate to a first surface of a second semiconductor substrate; thinning the first semiconductor on a second surface of the first semiconductor substrate to provide optical contrast between the apertures and the first semiconductor substrate; and aligning a feature on the second surface of the first semiconductor substrate using the apertures as at least one alignment mark.

摘要翻译： 公开了包括对准标记的结构和在三维（3D）结构中形成对准标记的方法）。 该方法包括在第一半导体衬底的第一表面中形成孔; 将第一半导体衬底的第一表面接合到第二半导体衬底的第一表面; 在第一半导体衬底的第二表面上使第一半导体薄化以提供孔和第一半导体衬底之间的光学对比度; 以及使用所述孔将所述第一半导体衬底的所述第二表面上的特征对准为至少一个对准标记。

公开(公告)号：US08492878B2

公开(公告)日：2013-07-23

申请号：US12840688

申请日：2010-07-21

申请人： Mukta G. Farooq ,  Robert Hannon ,  Richard P. Volant

发明人： Mukta G. Farooq ,  Robert Hannon ,  Richard P. Volant

IPC分类号： H01L29/40

CPC分类号： H01L21/76898 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/3171 ,  H01L23/481 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L24/93 ,  H01L24/94 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68381 ,  H01L2224/03002 ,  H01L2224/0401 ,  H01L2224/0557 ,  H01L2224/05572 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/06181 ,  H01L2224/11002 ,  H01L2224/11334 ,  H01L2224/131 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/81801 ,  H01L2224/93 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/10253 ,  H01L2924/12044 ,  H01L2924/15788 ,  H01L2924/014 ,  H01L2224/81 ,  H01L2224/03 ,  H01L2224/11 ,  H01L2924/00 ,  H01L2224/05552

摘要： A through-substrate via (TSV) structure that is immune to metal contamination due to a backside planarization process is provided. After forming a through-substrate via (TSV) trench, a diffusion barrier liner is conformally deposited on the sidewalls of the TSV trench. A dielectric liner is formed by depositing a dielectric material on vertical portions of the diffusion barrier liner. A metallic conductive via structure is formed by subsequently filling the TSV trench. Horizontal portions of the diffusion barrier liner are removed. The diffusion barrier liner protects the semiconductor material of the substrate during the backside planarization by blocking residual metallic material originating from the metallic conductive via structure from entering into the semiconductor material of the substrate, thereby protecting the semiconductor devices within the substrate from metallic contamination.

摘要翻译： 提供了由于背面平坦化处理而对金属污染免疫的贯穿衬底通孔（TSV）结构。 在形成贯穿衬底通孔（TSV）沟槽之后，扩散阻挡衬里共形沉积在TSV沟槽的侧壁上。 通过在扩散阻挡衬里的垂直部分上沉积介电材料形成电介质衬垫。 通过随后填充TSV沟槽形成金属导电通孔结构。 去除扩散阻挡衬里的水平部分。 扩散阻挡衬里通过阻挡源自金属导电通路结构的残余金属材料进入衬底的半导体材料来保护衬底的半导体材料，从而保护衬底内的半导体器件免受金属污染。

公开(公告)号：US20120315753A1

公开(公告)日：2012-12-13

申请号：US13154905

申请日：2011-06-07

申请人： Mukta G. Farooq ,  Troy Lawrence Graves-Abe

发明人： Mukta G. Farooq ,  Troy Lawrence Graves-Abe

IPC分类号： H01L21/283

CPC分类号： H01L21/76898 ,  H01L21/2885 ,  H01L21/306 ,  H01L21/6835 ,  H01L21/76841 ,  H01L21/76846 ,  H01L21/76879 ,  H01L23/562 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2221/1084 ,  H01L2221/68372 ,  H01L2221/68381 ,  H01L2224/0401 ,  H01L2224/05022 ,  H01L2224/05572 ,  H01L2224/05647 ,  H01L2224/05666 ,  H01L2224/13023 ,  H01L2224/131 ,  H01L2924/00014 ,  H01L2924/07802 ,  H01L2924/00012 ,  H01L2924/01074 ,  H01L2924/014 ,  H01L2924/00 ,  H01L2224/05552

摘要： A method for fabricating through-silicon vias (TSVs) for semiconductor devices is provided. Specifically, the method involves utilizing copper contact pads in a back-end-of-line wiring level, wherein the copper contact pads act as cathodes for performing an electroplating technique to fill TSVs with plated-conductive material (e.g., copper) from an electroplating solution. Moreover, the method provides a way to fill high aspect ratio TSVs with minimal additional semiconductor fabrication process steps, which can increase the silicon area that is available for forming additional electronic components on integrated circuits.

摘要翻译： 提供了一种用于制造用于半导体器件的硅通孔（TSV）的方法。 具体地，该方法包括在后端线路布线层中利用铜接触焊盘，其中铜接触焊盘用作执行电镀技术的阴极，用电镀导电材料（例如铜）填充TSV 解。 此外，该方法提供了通过最小的附加半导体制造工艺步骤填充高纵横比TSV的方法，其可以增加可用于在集成电路上形成附加电子部件的硅面积。

公开(公告)号：US20120199975A1

公开(公告)日：2012-08-09

申请号：US13023743

申请日：2011-02-09

申请人： Mukta G. Farooq ,  John A. Griesemer ,  Gary LaFontant ,  William Francis Landers ,  Timothy Dooling Sullivan

发明人： Mukta G. Farooq ,  John A. Griesemer ,  Gary LaFontant ,  William Francis Landers ,  Timothy Dooling Sullivan

IPC分类号： H01L23/522 ,  H01L21/768

CPC分类号： H01L23/481 ,  H01L2924/0002 ,  H01L2924/00

摘要： The embodiments provide a method for reducing electromigration in a circuit containing a through-silicon via (TSV) and the resulting novel structure for the TSV. A TSV is formed through a semiconductor substrate. A first end of the TSV connects to a first metallization layer on a device side of the semiconductor substrate. A second end of the TSV connects to a second metallization layer on a grind side of the semiconductor substrate. A first flat edge is created on the first end of the TSV at the intersection of the first end of the TSV and the first metallization layer. A second flat edge is created on the second end of the TSV at the intersection of the second end of the TSV and the second metallization layer. On top of the first end a metal contact grid is placed, having less than eighty percent metal coverage.

公开(公告)号：US20120168952A1

公开(公告)日：2012-07-05

申请号：US13418261

申请日：2012-03-12

申请人： Mukta G. Farooq ,  Emily R. Kinser ,  Ian D. Melville ,  Krystyna W. Semkow

发明人： Mukta G. Farooq ,  Emily R. Kinser ,  Ian D. Melville ,  Krystyna W. Semkow

IPC分类号： H01L23/522 ,  H01L21/768

CPC分类号： H01L21/02697 ,  H01L23/53238 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/0401 ,  H01L2224/05006 ,  H01L2224/05007 ,  H01L2224/05016 ,  H01L2224/05026 ,  H01L2224/05027 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05157 ,  H01L2224/05187 ,  H01L2224/05562 ,  H01L2224/05572 ,  H01L2224/131 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/15787 ,  H01L2924/04953 ,  H01L2924/01014 ,  H01L2224/05552 ,  H01L2924/00

摘要： Disclosed is a process of making a semiconductor device wherein an insulation layer has a copper plug in contact with the last wiring layer of the device. There may also be a barrier layer separating the copper plug from the insulation layer. There may also be a cap layer over the copper plug to protect it from oxidation. There may also be a dielectric layer over the cap layer.

摘要翻译： 公开了制造半导体器件的方法，其中绝缘层具有与器件的最后布线层接触的铜插塞。 还可以存在将铜塞与绝缘层分离的阻挡层。 在铜塞上方也可能有一个盖层，以防止它被氧化。 在盖层上还可以存在介电层。

公开(公告)号：US08039964B2

公开(公告)日：2011-10-18

申请号：US12038241

申请日：2008-02-27

申请人： Mukta G. Farooq ,  Emily R. Kinser

发明人： Mukta G. Farooq ,  Emily R. Kinser

IPC分类号： H01L23/48 ,  H01L23/52

CPC分类号： H01L21/76831 ,  H01L21/76807 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76829 ,  H01L23/5226 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05027 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05572 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05666 ,  H01L2224/11 ,  H01L2224/13006 ,  H01L2924/0002 ,  H01L2924/00 ,  H01L2924/00014

摘要： A line trough and a via cavity are formed within a dielectric layer comprising a fluorosilicate glass (FSG) layer. A fluorine depleted adhesion layer is formed within the line trough and the via cavity either by a plasma treatment that removes fluorine from exposed surfaces of the FSG layer, or by deposition of a substantially fluorine-free dielectric layer. Metal is deposited within the line trough and the via cavity to form a metal line and a metal via. The fluorine depleted adhesion layer provides enhanced adhesion to the metal line compared with prior art structures in which a metal line directly contacts a FSG layer. The enhanced adhesion of metal with an underlying dielectric layer provides higher resistance to delamination for a semiconductor package employing lead-free C4 balls on a metal interconnect structure.

摘要翻译： 在包含氟硅酸盐玻璃（FSG）层的电介质层内形成线槽和通孔。 通过从FSG层的暴露表面除去氟的等离子体处理或通过沉积基本上无氟的介电层，在管线槽和通孔内形成氟贫化粘合层。 金属沉积在管线槽和通孔腔内以形成金属线和金属通孔。 与其中金属线直接接触FSG层的现有技术结构相比，氟贫化粘合层提供对金属线的增强的粘合性。 金属与底层电介质层的增强的粘附性对于在金属互连结构上使用无铅C4球的半导体封装提供更高的剥离性。