公开(公告)号：US20130026650A1

公开(公告)日：2013-01-31

申请号：US13556448

申请日：2012-07-24

申请人： Osamu Yamagata ,  Akio Katsumata ,  Hiroshi Inoue ,  Shigenori Sawachi ,  Satoru Itakura ,  Yasuhiro Yamaji

发明人： Osamu Yamagata ,  Akio Katsumata ,  Hiroshi Inoue ,  Shigenori Sawachi ,  Satoru Itakura ,  Yasuhiro Yamaji

IPC分类号： H01L23/48 ,  H01L21/50 ,  H01L21/78

CPC分类号： H01L24/97 ,  H01L24/19 ,  H01L24/24 ,  H01L24/29 ,  H01L24/32 ,  H01L24/82 ,  H01L25/105 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/24226 ,  H01L2224/2518 ,  H01L2224/29099 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/73267 ,  H01L2224/92244 ,  H01L2224/97 ,  H01L2225/1035 ,  H01L2225/1058 ,  H01L2225/1094 ,  H01L2924/01029 ,  H01L2924/014 ,  H01L2924/078 ,  H01L2924/0951 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/15311 ,  H01L2924/15321 ,  H01L2924/1579 ,  H01L2924/15798 ,  H01L2924/00014 ,  H01L2224/82 ,  H01L2924/00

摘要： A semiconductor device is made up of an organic substrate; through vias which penetrate the organic substrate in its thickness direction; external electrodes and internal electrodes provided to the front and back faces of the organic substrate and electrically connected to the through vias; a semiconductor element mounted on one main surface of the organic substrate via a bonding layer, with an element circuit surface thereof facing upward; an insulating material layer for sealing the semiconductor element and a periphery thereof; a metal thin film wiring layer provided in the insulating material layer, with a part of this metal thin film wiring layer being exposed on an external surface; metal vias provided in the insulating material layer and electrically connected to the metal thin film wiring layer; and external electrodes formed on the metal thin film wiring layer.

摘要翻译： 半导体器件由有机基片构成; 贯穿有机基板的厚度方向的通孔; 外部电极和内部电极，设置在有机基板的前表面和后表面上并电连接到通孔; 半导体元件经由接合层安装在有机基板的一个主表面上，其元件电路表面朝上; 用于密封半导体元件的绝缘材料层及其周边; 设置在所述绝缘材料层中的金属薄膜布线层，所述金属薄膜布线层的一部分露出在外表面上; 金属通孔，设置在绝缘材料层中并电连接到金属薄膜布线层; 以及形成在金属薄膜布线层上的外部电极。

公开(公告)号：US20130200523A1

公开(公告)日：2013-08-08

申请号：US13616549

申请日：2012-09-14

申请人： Shigenori SAWACHI ,  Osamu Yamagata ,  Hiroshi Inoue ,  Satoru Itakura ,  Tomoshige Chikai ,  Masahiko Hori ,  Akio Katsumata

发明人： Shigenori SAWACHI ,  Osamu Yamagata ,  Hiroshi Inoue ,  Satoru Itakura ,  Tomoshige Chikai ,  Masahiko Hori ,  Akio Katsumata

IPC分类号： H01L23/48 ,  H01L21/50

CPC分类号： H01L25/0657 ,  H01L23/49816 ,  H01L23/5384 ,  H01L23/5389 ,  H01L24/24 ,  H01L24/82 ,  H01L24/97 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/06135 ,  H01L2224/12105 ,  H01L2224/24226 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L2224/82031 ,  H01L2224/82039 ,  H01L2224/92244 ,  H01L2225/06524 ,  H01L2225/06548 ,  H01L2225/06562 ,  H01L2225/06586 ,  H01L2225/06589 ,  H01L2225/1023 ,  H01L2225/1029 ,  H01L2225/1035 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/15311 ,  H01L2924/00014 ,  H01L2924/00015 ,  H01L2924/00 ,  H01L2924/00012

摘要： A semiconductor device containing: a semiconductor element; a support substrate; an insulating material layer for sealing the semiconductor element and a periphery thereof; a metal thin film wiring layer provided in the insulating material layer, with a part thereof being exposed on an external surface; and metal vias provided in the insulating material layer and electrically connected to the metal thin film wiring layer. The semiconductor element is provided in a plurality of units and the respective semiconductor elements are stacked via an insulating material such that a circuit surface of each semiconductor element faces the metal thin film wiring layer, and electrode pads of each semiconductor element are exposed without being hidden by the semiconductor element stacked thereabove.

摘要翻译： 一种半导体器件，包括：半导体元件; 支撑基板; 用于密封半导体元件的绝缘材料层及其周边; 设置在所述绝缘材料层中的金属薄膜布线层，其一部分露出在外表面上; 以及设置在绝缘材料层中并电连接到金属薄膜布线层的金属通孔。 半导体元件设置在多个单元中，并且各个半导体元件经由绝缘材料层叠，使得每个半导体元件的电路表面面对金属薄膜布线层，并且每个半导体元件的电极焊盘暴露而不被隐藏 通过堆叠在其上的半导体元件。

公开(公告)号：US08872350B2

公开(公告)日：2014-10-28

申请号：US13616549

申请日：2012-09-14

申请人： Shigenori Sawachi ,  Osamu Yamagata ,  Hiroshi Inoue ,  Satoru Itakura ,  Tomoshige Chikai ,  Masahiko Hori ,  Akio Katsumata

发明人： Shigenori Sawachi ,  Osamu Yamagata ,  Hiroshi Inoue ,  Satoru Itakura ,  Tomoshige Chikai ,  Masahiko Hori ,  Akio Katsumata

IPC分类号： H01L23/48 ,  H01L23/495 ,  H01L23/02 ,  H01L23/52

CPC分类号： H01L25/0657 ,  H01L23/49816 ,  H01L23/5384 ,  H01L23/5389 ,  H01L24/24 ,  H01L24/82 ,  H01L24/97 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/06135 ,  H01L2224/12105 ,  H01L2224/24226 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L2224/82031 ,  H01L2224/82039 ,  H01L2224/92244 ,  H01L2225/06524 ,  H01L2225/06548 ,  H01L2225/06562 ,  H01L2225/06586 ,  H01L2225/06589 ,  H01L2225/1023 ,  H01L2225/1029 ,  H01L2225/1035 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/15311 ,  H01L2924/00014 ,  H01L2924/00015 ,  H01L2924/00 ,  H01L2924/00012

摘要： A semiconductor device containing: a semiconductor element; a support substrate; an insulating material layer for sealing the semiconductor element and a periphery thereof; a metal thin film wiring layer provided in the insulating material layer, with a part thereof being exposed on an external surface; and metal vias provided in the insulating material layer and electrically connected to the metal thin film wiring layer. The semiconductor element is provided in a plurality of units and the respective semiconductor elements are stacked via an insulating material such that a circuit surface of each semiconductor element faces the metal thin film wiring layer, and electrode pads of each semiconductor element are exposed without being hidden by the semiconductor element stacked thereabove.

摘要翻译： 一种半导体器件，包括：半导体元件; 支撑基板; 用于密封半导体元件的绝缘材料层及其周边; 设置在所述绝缘材料层中的金属薄膜布线层，其一部分露出在外表面上; 以及设置在绝缘材料层中并电连接到金属薄膜布线层的金属通孔。 半导体元件设置在多个单元中，并且各个半导体元件经由绝缘材料层叠，使得每个半导体元件的电路表面面对金属薄膜布线层，并且每个半导体元件的电极焊盘暴露而不被隐藏 通过堆叠在其上的半导体元件。

公开(公告)号：US09196507B1

公开(公告)日：2015-11-24

申请号：US14807193

申请日：2015-07-23

申请人： Hiroshi Inoue ,  Akio Katsumata ,  Shigenori Sawachi ,  Osamu Yamagata

发明人： Hiroshi Inoue ,  Akio Katsumata ,  Shigenori Sawachi ,  Osamu Yamagata

IPC分类号： H01L21/00 ,  H01L23/02 ,  H01L21/48 ,  H01L21/82 ,  H01L23/00

CPC分类号： H01L21/486 ,  H01L21/4853 ,  H01L21/4857 ,  H01L21/82 ,  H01L23/13 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/5389 ,  H01L24/19 ,  H01L24/73 ,  H01L24/83 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/105 ,  H01L25/50 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L2224/92244 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2225/1023 ,  H01L2225/1035 ,  H01L2225/1058 ,  H01L2924/12042 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2224/83 ,  H01L2224/82 ,  H01L2924/00012 ,  H01L2924/00

摘要： A method of manufacturing a semiconductor device having an insulating substrate, a semiconductor element which is mounted on one main surface of the insulating substrate via adhesive, with an element circuit surface of the semiconductor element facing upwards, a first insulating material layer (A) which seals the element circuit surface of the semiconductor element and the insulating substrate peripheral thereto, a first metal thin film wire layer provided on the first insulating material layer (A) and a portion of which is exposed to an external surface, a first insulating material layer (B) provided on the first metal thin film wire layer, a second insulating material layer provided on a main surface of the insulating substrate where the semiconductor element is not mounted, a second metal thin film wire layer provided inside the second insulating material layer.

摘要翻译： 一种制造具有绝缘基板的半导体器件的方法，半导体元件，其通过粘合剂安装在绝缘基板的一个主表面上，半导体元件的元件电路表面朝上，第一绝缘材料层（A），其 密封半导体元件的元件电路表面和周围的绝缘基板，设置在第一绝缘材料层（A）上并且其一部分暴露于外表面的第一金属薄膜线层，第一绝缘材料层 （B），设置在绝缘基板的未安装半导体元件的主表面上的第二绝缘材料层，设置在第二绝缘材料层内部的第二金属薄膜线层。

公开(公告)号：US09147671B2

公开(公告)日：2015-09-29

申请号：US14190885

申请日：2014-02-26

申请人： Hiroshi Inoue ,  Akio Katsumata ,  Shigenori Sawachi ,  Osamu Yamagata

发明人： Hiroshi Inoue ,  Akio Katsumata ,  Shigenori Sawachi ,  Osamu Yamagata

IPC分类号： H01L23/02 ,  H01L21/00 ,  H01L25/065 ,  H01L23/538 ,  H01L23/13 ,  H01L21/82 ,  H01L25/00

CPC分类号： H01L21/486 ,  H01L21/4853 ,  H01L21/4857 ,  H01L21/82 ,  H01L23/13 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/5389 ,  H01L24/19 ,  H01L24/73 ,  H01L24/83 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/105 ,  H01L25/50 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L2224/92244 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2225/1023 ,  H01L2225/1035 ,  H01L2225/1058 ,  H01L2924/12042 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2224/83 ,  H01L2224/82 ,  H01L2924/00012 ,  H01L2924/00

摘要： A semiconductor device, having an insulating substrate; a semiconductor element which is mounted on one main surface of the insulating substrate via adhesive, with an element circuit surface of the semiconductor element facing upwards; a first insulating material layer which seals the element circuit surface of the semiconductor element and the insulating substrate peripheral thereto; a first metal thin film wire layer which is provided on the first insulating material layer (A) and a portion of which is exposed to an external surface; a first insulating material layer (B) which is provided on the first metal thin film wire layer; a second insulating material layer which is provided on a main surface of the insulating substrate where the semiconductor element is not mounted; and a second metal thin film wire layer which is provided inside the second insulating material layer.

摘要翻译： 一种半导体器件，具有绝缘基板; 半导体元件，其通过粘合剂安装在绝缘基板的一个主表面上，半导体元件的元件电路表面朝上; 第一绝缘材料层，其密封半导体元件的元件电路表面和周边的绝缘基板; 第一金属薄膜线层，其设置在第一绝缘材料层（A）上并且其一部分暴露于外表面; 设置在第一金属薄膜线层上的第一绝缘材料层（B）; 第二绝缘材料层，设置在绝缘基板的未安装半导体元件的主表面上; 以及设置在第二绝缘材料层内部的第二金属薄膜线层。

公开(公告)号：US5479467A

公开(公告)日：1995-12-26

申请号：US232955

申请日：1994-04-25

申请人： Akio Katsumata

发明人： Akio Katsumata

IPC分类号： G06F11/30 ,  B41J29/393 ,  G06K15/00 ,  G06M3/00

CPC分类号： B41J29/393 ,  G06K15/00 ,  G06K2215/0082 ,  G06K2215/0097

摘要： A history recording apparatus comprises an EEPROM for storing operation history data regarding a predetermined operation performed by a label printer, and an IC socket provided on a circuit board of the label printer and detachably connectable to the EEPROM. In particular, the history recording apparatus further comprises a CPU for updating the operation history data stored in the nonvolatile memory connected to the IC socket, upon detection of the predetermined operation having been performed a preset number of times which is determined on the basis of a writing tolerance limit of the EEPROM.

摘要翻译： 历史记录装置包括用于存储关于由标签打印机执行的预定操作的操作历史数据的EEPROM，以及设置在标签打印机的电路板上并可拆卸地连接到EEPROM的IC插座。 具体地，历史记录装置还包括CPU，用于在检测到已经执行预定次数的预定次数时，更新存储在连接到IC插座的非易失性存储器中的操作历史数据，该预定次数是基于 写入EEPROM的容差限制。

公开(公告)号：US5420756A

公开(公告)日：1995-05-30

申请号：US77080

申请日：1993-06-16

申请人： Akio Katsumata ,  Kimihiro Ikebe

发明人： Akio Katsumata ,  Kimihiro Ikebe

IPC分类号： B42D15/10 ,  G06K19/077 ,  H01L21/8247 ,  H01L27/115 ,  H05K1/18 ,  H05K5/02 ,  H05K7/02

CPC分类号： H05K5/026 ,  G06K19/072 ,  G06K19/077 ,  H05K1/181 ,  H05K2201/09772 ,  H05K2201/10515 ,  H05K2201/10681 ,  Y02P70/611

摘要： TCP (tape carrier package) type semiconductor memory elements, each having a thickness less than that of the conventional package, are provided on the front and rear surface of a print circuit board in a stacking manner. Close to the semiconductor memory elements stacked, provided are TCP type semiconductor memory elements stacked one on another. Each TCP type semiconductor memory element has outer leads on its one side surface. The outer leads having the same function are arranged in a straight line on the front or rear surface of the print substrate. The outer leads arranged in the straight line are connected with each other via a straight wiring pattern.

摘要翻译： 以堆叠方式在印刷电路板的前表面和后表面上设置厚度小于常规封装的厚度的TCP（带载封装）型半导体存储元件。 靠近堆叠的半导体存储器元件，提供了彼此层叠的TCP型半导体存储器元件。 每个TCP型半导体存储元件在其一个侧表面上具有外引线。 具有相同功能的外引线在印刷基板的前表面或后表面上以直线布置。 设置在直线上的外引线通过直线布线图案相互连接。

公开(公告)号：US5223739A

公开(公告)日：1993-06-29

申请号：US581700

申请日：1990-09-13

申请人： Akio Katsumata ,  Seiichi Hirata ,  Shinetsu Fujieda ,  Hiroshi Shimozawa

发明人： Akio Katsumata ,  Seiichi Hirata ,  Shinetsu Fujieda ,  Hiroshi Shimozawa

IPC分类号： H01L21/56 ,  H01L23/00 ,  H01L23/16 ,  H01L23/28 ,  H01L23/29 ,  H01L23/31

CPC分类号： H01L23/564 ,  H01L21/565 ,  H01L23/16 ,  H01L2224/48091 ,  H01L2224/48247

摘要： A plastic molded semiconductor device having a semiconductor chip mounted on a die pad supported by hanging pins. The semiconductor chip is encapsulated by mold plastic where the semiconductor chip has a lead portion protruding to a side, and in which practically the entire periphery of the semiconductor chip is covered by aluminum or some other moistureproof material that stops the entry of moisture.

摘要翻译： 一种塑料模制半导体器件，其具有安装在由悬挂销支撑的裸片上的半导体芯片。 半导体芯片由模具塑料封装，其中半导体芯片具有向一侧突出的引线部分，并且实际上半导体芯片的整个周边被铝或其它防止水分进入的其它防潮材料覆盖。

公开(公告)号：US06153448A

公开(公告)日：2000-11-28

申请号：US377864

申请日：1999-08-20

申请人： Takuya Takahashi ,  Akio Katsumata

发明人： Takuya Takahashi ,  Akio Katsumata

IPC分类号： H01L23/12 ,  H01L21/60 ,  H01L23/31 ,  H01L23/485 ,  H01L29/06 ,  H01L21/44 ,  H01L21/48 ,  H01L21/50

CPC分类号： H01L24/13 ,  H01L23/3114 ,  H01L24/11 ,  H01L24/48 ,  H01L24/73 ,  H01L2224/0231 ,  H01L2224/0401 ,  H01L2224/05548 ,  H01L2224/05599 ,  H01L2224/11334 ,  H01L2224/13023 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/48091 ,  H01L2224/4824 ,  H01L2224/484 ,  H01L2224/94 ,  H01L29/0657 ,  H01L2924/0001 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10157

摘要： There is provided a semiconductor device having a chip-size package structure comprising a semiconductor pellet including semiconductor elements, wires, a plurality of electrode pads, and final protection film, an insulation layer serving also as a sealing layer formed to cover the entire surface of the semiconductor pellet having a via hole portion above each of the electrode pads in association therewith, a plurality of wiring patterns formed with a via hole wiring portion electrically connected to the electrode pad at the bottom of each of the via hole portions of the insulation layer and formed with a land portion connected thereto and located in a position offset from the via hole portion, and an external electrode in the form of a ball provided on the land portion of each of the wiring patterns. This makes it possible to provide a semiconductor device in a chip-size package structure in which the length of wires led out from electrode pads is shortened as much as possible to lead out wires from electrode pads near the center of the pellet easily and to allow a pellet having an increased number of external electrodes to be accommodated.

摘要翻译： 提供了具有芯片尺寸封装结构的半导体器件，其包括半导体芯片，半导体芯片包括半导体元件，导线，多个电极焊盘和最终保护膜，还用作密封层的绝缘层，覆盖整个表面的 所述半导体芯片具有与每个电极焊盘相关联的通孔部分，多个布线图案形成有通孔布线部分，其电连接到绝缘层的每个通孔部分的底部处的电极焊盘 并且形成有连接到其上并位于偏离通孔部分的位置的平台部分，以及设置在每个布线图案的台面部分上的以球形形式的外部电极。 这使得可以提供一种芯片尺寸封装结构中的半导体器件，其中从电极焊盘引出的导线的长度尽可能地缩短以便容易地从芯片的中心附近的电极焊盘引出线，并允许 具有增加数量的待容纳的外部电极的颗粒。

公开(公告)号：US5977641A

公开(公告)日：1999-11-02

申请号：US76725

申请日：1998-05-13

申请人： Takuya Takahashi ,  Akio Katsumata

发明人： Takuya Takahashi ,  Akio Katsumata

IPC分类号： H01L23/12 ,  H01L21/60 ,  H01L23/31 ,  H01L23/485 ,  H01L29/06 ,  H01L21/66 ,  H01L24/78

CPC分类号： H01L24/13 ,  H01L23/3114 ,  H01L24/11 ,  H01L24/48 ,  H01L24/73 ,  H01L2224/0231 ,  H01L2224/0401 ,  H01L2224/05548 ,  H01L2224/05599 ,  H01L2224/11334 ,  H01L2224/13023 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/48091 ,  H01L2224/4824 ,  H01L2224/484 ,  H01L2224/94 ,  H01L29/0657 ,  H01L2924/0001 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10157

摘要： There is provided a semiconductor device having a chip-size package structure comprising a semiconductor pellet including semiconductor elements, wires, a plurality of electrode pads, and final protection film, an insulation layer serving also as a sealing layer formed to cover the entire surface of the semiconductor pellet having a via hole portion above each of the electrode pads in association therewith, a plurality of wiring patterns formed with a via hole wiring portion electrically connected to the electrode pad at the bottom of each of the via hole portions of the insulation layer and formed with a land portion connected thereto and located in a position offset from the via hole portion, and an external electrode in the form of a ball provided on the land portion of each of the wiring patterns. This makes it possible to provide a semiconductor device in a chip-size package structure in which the length of wires led out from electrode pads is shortened as much as possible to lead out wires from electrode pads near the center of the pellet easily and to allow a pellet having an increased number of external electrodes to be accommodated.

摘要翻译： 提供了具有芯片尺寸封装结构的半导体器件，其包括半导体芯片，半导体芯片包括半导体元件，导线，多个电极焊盘和最终保护膜，还用作密封层的绝缘层，覆盖整个表面的 所述半导体芯片具有与每个电极焊盘相关联的通孔部分，多个布线图案形成有通孔布线部分，其电连接到绝缘层的每个通孔部分的底部处的电极焊盘 并且形成有连接到其上并位于偏离通孔部分的位置的平台部分，以及设置在每个布线图案的台面部分上的以球形形式的外部电极。 这使得可以提供一种芯片尺寸封装结构中的半导体器件，其中从电极焊盘引出的导线的长度尽可能地缩短以便容易地从芯片的中心附近的电极焊盘引出线，并允许 具有增加数量的待容纳的外部电极的颗粒。