Baseplate for chip burn-in and/of testing, and method thereof
    4.
    发明授权
    Baseplate for chip burn-in and/of testing, and method thereof 失效
    用于芯片烧录和/或测试的基板及其方法

    公开(公告)号:US06335210B1

    公开(公告)日:2002-01-01

    申请号:US09466607

    申请日:1999-12-17

    IPC分类号: H01L2166

    摘要: The present invention relates generally to a new structure and method for chip burn-in and/or testing. More particularly, the invention encompasses a baseplate that is secured to a delicate chip and a method for such an invention is also disclosed. The inventive baseplate provides an added strength to a complex chip while it is being tested and/or burned-in, and then during normal use the baseplate of this invention is an integrated component of the chip.

    摘要翻译: 本发明一般涉及用于芯片老化和/或测试的新结构和方法。 更具体地,本发明包括固定到精细芯片上的底板,并且还公开了用于这种发明的方法。 本发明的基板在被测试和/或燃烧时提供了对复合芯片的附加强度,然后在正常使用期间,本发明的底板是芯片的集成部件。

    Process and apparatus to remove closely spaced chips on a multi-chip module
    6.
    发明授权
    Process and apparatus to remove closely spaced chips on a multi-chip module 失效
    在多芯片模块上去除紧密间隔的芯片的工艺和装置

    公开(公告)号:US06216937B1

    公开(公告)日:2001-04-17

    申请号:US09470455

    申请日:1999-12-22

    IPC分类号: B23K100

    摘要: A process and apparatus for removing flip chips with C4 joints mounted on a multi-chip module by applying a tensile force to one or more removal member bonded to the back of one or more flip chips during heating of the module to a temperature sufficient to cause the C4 joints to become molten. The tensile force can either be a compressed spring, or a bimetallic member which is flat at room temperature and becomes curved when heated to such temperature, or a memory alloy whose original shape is curved and which is bent flat at room temperature but returns to its original curved shape when heated to such temperature. An adhesive is used to bond the removal member to the chip to be removed and is a low temperature, fast curing adhesive with high temperature tolerance after curing.

    摘要翻译: 一种用于通过在将模块加热到足以导致的温度的温度下向一个或多个倒装芯片的背面施加张力而将一个或多个去除构件施加拉力而移除通过安装在多芯片模块上的C4接头的倒装芯片的方法和装置 C4接头变得熔化。 张力可以是压缩弹簧,也可以是在室温下平坦并在加热到这样的温度时变得弯曲的双金属构件,或者原始形状是弯曲的并且在室温下弯曲平坦但回到其中的记忆合金 原来弯曲的形状加热到这样的温度。 使用粘合剂将去除构件粘合到要去除的芯片上,并且是固化后具有耐高温性的低温快速固化粘合剂。

    Interconnection structure and process module assembly and rework
    7.
    发明授权
    Interconnection structure and process module assembly and rework 失效
    互连结构和过程模块组装和返工

    公开(公告)号:US06235996B1

    公开(公告)日:2001-05-22

    申请号:US09014804

    申请日:1998-01-28

    IPC分类号: H01L2348

    摘要: An interconnection structure and methods for making and detaching the same are presented for column and ball grid array (CGA and BGA) structures by using a transient solder paste on the electronic module side of the interconnection that includes fine metal powder additives to increase the melting point of the solder bond. The metal powder additives change the composition of the solder bond such that the transient melting solder composition does not completely melt at temperatures below +230° C. and detach from the electronic module during subsequent reflows. A Pb—Sn eutectic with a lower melting point is used on the opposite end of the interconnection structure. In the first method a transient melting solder paste is applied to the I/O pad of an electronic module by a screening mask. Interconnect structures are then bonded to the I/O pad. In a second method, solder preforms in a composition of the transient melting solder paste are wetted onto electronic module I/O pads and interconnect columns or balls are then bonded. Detachment of an electronic module from a circuit card can then be performed by heating the circuit card assembly to a temperature above the eutectic solder melting point, but below the transient solder joint melting point.

    摘要翻译: 通过使用包括细金属粉末添加剂的电子模块侧的瞬态焊膏来提供柱和球栅阵列(CGA和BGA)结构的互连结构及其分离方法,以增加熔点 的焊点。 金属粉末添加剂改变焊料接合的组成,使得瞬态熔融焊料组合物在低于+ 230℃的温度下不会完全熔化,并且在随后的回流期间与电子模块分离。 在互连结构的另一端使用具有较低熔点的Pb-Sn共晶体。 在第一种方法中,通过屏蔽掩模将瞬态熔融焊膏施加到电子模块的I / O焊盘。 然后将互连结构结合到I / O焊盘。 在第二种方法中,将瞬态熔融焊膏的组合物中的焊料预成型件润湿到电子模块I / O焊盘上,然后将互连柱或球接合。 然后可以通过将电路卡组件加热到高于共熔焊料熔点但低于瞬态焊点熔点的温度来执行从电路卡分离电子模块。

    Interconnection process for module assembly and rework
    9.
    发明授权
    Interconnection process for module assembly and rework 有权
    模块组装和返工的互连过程

    公开(公告)号:US06574859B2

    公开(公告)日:2003-06-10

    申请号:US09785787

    申请日:2001-02-16

    IPC分类号: H05K336

    摘要: An interconnection structure and methods for making and detaching the same are presented for column and ball grid array (CGA and BGA) structures by using a transient solder paste on the electronic module side of the interconnection that includes fine metal powder additives to increase the melting point of the solder bond. The metal powder additives change the composition of the solder bond such that the transient melting solder composition does not completely melt at temperatures below +230° C. and detach from the electronic module during subsequent ref lows. A Pb—Sn eutectic with a lower melting point is used on the opposite end of the interconnection structure. In the first method a transient melting solder paste is applied to the I/O pad of an electronic module by means of a screening mask. Interconnect structures are then bonded to the I/O pad. In a second method, solder preforms in a composition of the transient melting solder paste are wetted onto electronic module I/O pads and interconnect columns or balls are then bonded. Detachment of an electronic module from a circuit card can then be performed by heating the circuit card assembly to a temperature above the eutectic solder melting point, but below the transient solder joint melting point.

    摘要翻译: 通过使用包括细金属粉末添加剂的电子模块侧的瞬态焊膏来提供柱和球栅阵列(CGA和BGA)结构的互连结构及其分离方法,以增加熔点 的焊点。 金属粉末添加剂改变焊料接合的组成,使得瞬态熔融焊料组合物在低于+ 230℃的温度下不会完全熔化,并且在后续参考低温期间与电子模块分离。 在互连结构的另一端使用具有较低熔点的Pb-Sn共晶体。在第一种方法中,通过掩模掩模将瞬态熔融焊膏施加到电子模块的I / O焊盘。 然后将互连结构结合到I / O焊盘。在第二种方法中,将瞬态熔融焊膏的组成中的焊料预成型件润湿到电子模块I / O焊盘上,然后连接互连柱或焊球。连接电子 然后可以通过将电路卡组件加热到高于共熔焊料熔点但低于瞬态焊点熔点的温度来执行电路卡的模块。