公开(公告)号：US08766312B2

公开(公告)日：2014-07-01

申请号：US13276475

申请日：2011-10-19

申请人： Shigenobu Sekine ,  Yurina Sekine ,  Yoshiharu Kuwana ,  Kazutoshi Kamibayashi

发明人： Shigenobu Sekine ,  Yurina Sekine ,  Yoshiharu Kuwana ,  Kazutoshi Kamibayashi

IPC分类号： H01L33/00

CPC分类号： H01L33/62 ,  H01L25/0753 ,  H01L27/153 ,  H01L33/486 ,  H01L2924/0002 ,  H01L2933/0066 ,  H01L2924/00

摘要： A light-emitting device includes a light-emitting element and a support substrate. The light-emitting element has an insulating layer and first and second vertical conductors passing through the insulating layer. The support substrate has a substrate part and first and second through electrodes and is disposed on the insulating layer. The first through electrode passes through the substrate part with one end connected to an opposing end of the first vertical conductor, while the second through electrode passes through the substrate part with one end connected to an opposing end of the second vertical conductor. The opposing ends of the first and second vertical conductors are projected from a surface of the insulating layer and connected to the ends of the first and second through electrode inside the support substrate.

摘要翻译： 发光装置包括发光元件和支撑基板。 发光元件具有绝缘层和穿过绝缘层的第一和第二垂直导体。 支撑基板具有基板部分和第一和第二贯通电极，并且设置在绝缘层上。 第一贯通电极通过基板部分，其一端连接到第一垂直导体的相对端，而第二贯穿电极通过基板部分，其一端连接到第二垂直导体的相对端。 第一和第二垂直导体的相对端从绝缘层的表面突出并且连接到支撑衬底内的第一和第二穿透电极的端部。

公开(公告)号：US20120091481A1

公开(公告)日：2012-04-19

申请号：US13276475

申请日：2011-10-19

申请人： Shigenobu Sekine ,  Yurina Sekine ,  Yoshiharu Kuwana ,  Kazutoshi Kamibayashi

发明人： Shigenobu Sekine ,  Yurina Sekine ,  Yoshiharu Kuwana ,  Kazutoshi Kamibayashi

IPC分类号： H01L33/08

CPC分类号： H01L33/62 ,  H01L25/0753 ,  H01L27/153 ,  H01L33/486 ,  H01L2924/0002 ,  H01L2933/0066 ,  H01L2924/00

摘要： A light-emitting device includes a light-emitting element and a support substrate. The light-emitting element has an insulating layer and first and second vertical conductors passing through the insulating layer. The support substrate has a substrate part and first and second through electrodes and is disposed on the insulating layer. The first through electrode passes through the substrate part with one end connected to an opposing end of the first vertical conductor, while the second through electrode passes through the substrate part with one end connected to an opposing end of the second vertical conductor. The opposing ends of the first and second vertical conductors are projected from a surface of the insulating layer and connected to the ends of the first and second through electrode inside the support substrate.

摘要翻译： 发光装置包括发光元件和支撑基板。 发光元件具有绝缘层和穿过绝缘层的第一和第二垂直导体。 支撑基板具有基板部分和第一和第二贯通电极，并且设置在绝缘层上。 第一贯通电极通过基板部分，其一端连接到第一垂直导体的相对端，而第二贯穿电极通过基板部分，其一端连接到第二垂直导体的相对端。 第一和第二垂直导体的相对端从绝缘层的表面突出并且连接到支撑衬底内的第一和第二穿透电极的端部。

公开(公告)号：US09685394B2

公开(公告)日：2017-06-20

申请号：US13106933

申请日：2011-05-13

申请人： Shigenobu Sekine ,  Yurina Sekine ,  Yoshiharu Kuwana

发明人： Shigenobu Sekine ,  Yurina Sekine ,  Yoshiharu Kuwana

IPC分类号： H01L33/62 ,  H01L21/28 ,  H01L23/48 ,  H01L21/768

CPC分类号： H01L23/481 ,  H01L21/76898 ,  H01L2224/13 ,  H01L2224/16146 ,  H01L2224/81 ,  H01L2924/09701 ,  H01L2924/13091 ,  H01L2924/1461 ,  H01L2924/00

摘要： An electronic device includes a semiconductor substrate, an insulating material-filled layer and a vertical conductor. The semiconductor substrate has a vertical hole extending in a thickness direction thereof. The insulating material-filled layer is a ring-shaped layer filled in the vertical hole for covering an inner periphery thereof and includes an organic insulating material or an inorganic insulating material mainly of a glass and a nanocomposite ceramic. The nanocomposite ceramic has a specific resistance of greater than 1014 Ω·cm at room temperature and a relative permittivity of 4 to 9. The vertical conductor is a solidified metal body filled in an area surrounded by the insulating material-filled layer.

公开(公告)号：US08415784B2

公开(公告)日：2013-04-09

申请号：US12789590

申请日：2010-05-28

申请人： Shigenobu Sekine ,  Yurina Sekine ,  Yoshiharu Kuwana ,  Ryuji Kimura

发明人： Shigenobu Sekine ,  Yurina Sekine ,  Yoshiharu Kuwana ,  Ryuji Kimura

IPC分类号： H01L23/52 ,  H01L21/768 ,  H01L23/48

CPC分类号： H05K13/0465 ,  H01B3/025 ,  H01B3/10 ,  H01L21/76898 ,  H01L23/147 ,  H01L23/481 ,  H01L23/49827 ,  H01L24/12 ,  H01L24/16 ,  H01L24/81 ,  H01L25/0657 ,  H01L25/50 ,  H01L2223/6616 ,  H01L2224/0401 ,  H01L2224/0557 ,  H01L2224/1131 ,  H01L2224/13009 ,  H01L2224/13025 ,  H01L2224/13099 ,  H01L2224/812 ,  H01L2224/8181 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01051 ,  H01L2924/01066 ,  H01L2924/01075 ,  H01L2924/01076 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/30105 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2224/05552 ,  H01L2224/8384

摘要： An electronic device includes a plurality of stacked substrates. Each of the substrates includes a semiconductor substrate, a columnar conductor, and a ring-shaped insulator. The columnar conductor extends along a thickness direction of the semiconductor substrate. The ring-shaped insulator includes an inorganic insulating layer mainly composed of a glass. The inorganic insulating layer fills a ring-shaped groove that is provided in the semiconductor substrate to surround the columnar conductor.

摘要翻译： 电子设备包括多个堆叠的基板。 每个基板包括半导体基板，柱状导体和环形绝缘体。 柱状导体沿半导体衬底的厚度方向延伸。 环状绝缘体包括主要由玻璃构成的无机绝缘层。 无机绝缘层填充设置在半导体衬底中以围绕柱状导体的环形槽。

公开(公告)号：US08377565B2

公开(公告)日：2013-02-19

申请号：US13084847

申请日：2011-04-12

申请人： Shigenobu Sekine ,  Yurina Sekine ,  Yoshiharu Kuwana

发明人： Shigenobu Sekine ,  Yurina Sekine ,  Yoshiharu Kuwana

IPC分类号： B22F7/00 ,  B32B15/01

CPC分类号： H01L21/76898 ,  H01L21/76882 ,  H01L2924/0002 ,  Y10T428/12014 ,  Y10T428/12028 ,  Y10T428/12493 ,  Y10T428/12535 ,  Y10T428/12632 ,  H01L2924/00

摘要： A filling material includes a support base member and a metal layer, the metal layer including a first metal layer and a second metal layer and being disposed on one side of the support base member, the first metal layer being an aggregate of nano metal particles and having a film thickness enabling melting at a temperature lower than a melting point, the second metal layer being an aggregate of metal particles having a lower melting point than the first metal layer.

摘要翻译： 填充材料包括支撑基底构件和金属层，所述金属层包括第一金属层和第二金属层，并且设置在所述支撑基底构件的一侧，所述第一金属层是纳米金属颗粒的聚集体， 具有能够在低于熔点的温度下熔化的膜厚度，所述第二金属层是具有比所述第一金属层低的熔点的金属颗粒的聚集体。

公开(公告)号：US20110284912A1

公开(公告)日：2011-11-24

申请号：US13106933

申请日：2011-05-13

申请人： Shigenobu Sekine ,  Yurina Sekine ,  Yoshiharu Kuwana

发明人： Shigenobu Sekine ,  Yurina Sekine ,  Yoshiharu Kuwana

IPC分类号： H01L33/62 ,  H01L21/28

CPC分类号： H01L23/481 ,  H01L21/76898 ,  H01L2224/13 ,  H01L2224/16146 ,  H01L2224/81 ,  H01L2924/09701 ,  H01L2924/13091 ,  H01L2924/1461 ,  H01L2924/00

摘要： An electronic device includes a semiconductor substrate, an insulating material-filled layer and a vertical conductor. The semiconductor substrate has a vertical hole extending in a thickness direction thereof. The insulating material-filled layer is a ring-shaped layer filled in the vertical hole for covering an inner periphery thereof and includes an organic insulating material or an inorganic insulating material mainly of a glass and a nanocomposite ceramic. The nanocomposite ceramic has a specific resistance of greater than 1014 Ω·cm at room temperature and a relative permittivity of 4 to 9. The vertical conductor is a solidified metal body filled in an area surrounded by the insulating material-filled layer.

摘要翻译： 电子设备包括半导体衬底，绝缘材料填充层和垂直导体。 半导体衬底具有沿其厚度方向延伸的垂直孔。 绝缘材料填充层是填充在用于覆盖其内周的垂直孔中的环状层，并且包括主要由玻璃和纳米复合陶瓷组成的有机绝缘材料或无机绝缘材料。 纳米复合陶瓷在室温下的电阻率大于1014＆OHgr·cm，相对介电常数为4〜9。垂直导体是填充在被绝缘材料填充层包围的区域中的凝固金属体。

公开(公告)号：US08580581B2

公开(公告)日：2013-11-12

申请号：US12943447

申请日：2010-11-10

申请人： Shigenobu Sekine ,  Yurina Sekine ,  Yoshiharu Kuwana

发明人： Shigenobu Sekine ,  Yurina Sekine ,  Yoshiharu Kuwana

IPC分类号： H01L21/00

CPC分类号： H01L25/50 ,  H01L23/481 ,  H01L24/11 ,  H01L24/12 ,  H01L24/16 ,  H01L24/81 ,  H01L25/0657 ,  H01L2224/0401 ,  H01L2224/05023 ,  H01L2224/05025 ,  H01L2224/05155 ,  H01L2224/05157 ,  H01L2224/0516 ,  H01L2224/05568 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/10135 ,  H01L2224/13025 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13157 ,  H01L2224/1316 ,  H01L2224/16146 ,  H01L2224/81121 ,  H01L2224/81193 ,  H01L2224/81801 ,  H01L2224/81986 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2225/06593 ,  H01L2924/0002 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01066 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/12042 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/00 ,  H01L2224/05552 ,  H01L2924/00012 ,  H01L2924/00014

摘要： A method for manufacturing an electronic device, including a step of aligning and stacking a plurality of substrates, each of the plurality of substrates having a plurality of vertical conductors and magnetic films, the vertical conductors being directed along a thickness direction of the substrate and distributed in a row with respect to a substrate surface, the magnetic films being disposed in place on the substrate surface in a predetermined positional relationship with the vertical conductors, upon aligning the plurality of substrates, the electronic device manufacturing method including a step of applying an external magnetic field to produce a magnetic attractive force between the magnetic films of adjacent stacked substrates and align the vertical conductors by the magnetic attractive force.

摘要翻译： 一种电子装置的制造方法，其特征在于，包括：对准和堆叠多个基板的步骤，所述多个基板中的每一个具有多个垂直导体和磁性膜，所述垂直导体沿着所述基板的厚度方向引导并分布 相对于基板表面成一排地，在对准多个基板时，磁性膜以与垂直导体预定的位置关系被布置在基板表面上的适当位置，该电子设备制造方法包括施加外部 磁场，以在相邻堆叠的衬底的磁性膜之间产生磁吸引力，并通过磁吸引力对准垂直导体。

公开(公告)号：US20110262762A1

公开(公告)日：2011-10-27

申请号：US13084847

申请日：2011-04-12

申请人： Shigenobu Sekine ,  Yurina Sekine ,  Yoshiharu Kuwana

发明人： Shigenobu Sekine ,  Yurina Sekine ,  Yoshiharu Kuwana

IPC分类号： B22F7/02 ,  B05D3/02 ,  B05D3/12 ,  B05D7/22

CPC分类号： H01L21/76898 ,  H01L21/76882 ,  H01L2924/0002 ,  Y10T428/12014 ,  Y10T428/12028 ,  Y10T428/12493 ,  Y10T428/12535 ,  Y10T428/12632 ,  H01L2924/00

摘要： A filling material includes a support base member and a metal layer, the metal layer including a first metal layer and a second metal layer and being disposed on one side of the support base member, the first metal layer being an aggregate of nano metal particles and having a film thickness enabling melting at a temperature lower than a melting point, the second metal layer being an aggregate of metal particles having a lower melting point than the first metal layer.

摘要翻译： 填充材料包括支撑基底构件和金属层，所述金属层包括第一金属层和第二金属层，并且设置在所述支撑基底构件的一侧，所述第一金属层是纳米金属颗粒的聚集体， 具有能够在低于熔点的温度下熔化的膜厚度，所述第二金属层是具有比所述第一金属层低的熔点的金属颗粒的聚集体。

公开(公告)号：US07842958B1

公开(公告)日：2010-11-30

申请号：US12753418

申请日：2010-04-02

申请人： Shigenobu Sekine ,  Yurina Sekine ,  Yoshiharu Kuwana

发明人： Shigenobu Sekine ,  Yurina Sekine ,  Yoshiharu Kuwana

IPC分类号： H01L29/18

CPC分类号： H01L33/382

摘要： A light-emitting diode includes a substrate, a semiconductive light-emitting layer, and electrodes. The semiconductive light-emitting layer is deposited on one side of the substrate. The electrodes are composed of a conductive material filled in pores leading to the semiconductive light-emitting layer through the substrate. The semiconductive light-emitting layer includes sequentially deposited n-type and p-type semiconductive layers. The electrodes include n-side and p-side electrodes. One of the n-side and p-side electrodes penetrates through one of the n-type and p-type semiconductive layers, which is disposed closer to the substrate but not targeted for connection, and terminates with a tip thereof located within the other semiconductive layer. The other of the n-side and p-side electrodes penetrates through the substrate from the other side opposite to the one side of the substrate and terminates with a tip thereof located within the one semiconductive layer disposed closer to the substrate.

摘要翻译： 发光二极管包括基板，半导体发光层和电极。 半导体发光层沉积在衬底的一侧。 电极由填充在通过基板通向半导体发光层的孔中的导电材料构成。 半导体发光层包括顺序沉积的n型和p型半导体层。 电极包括n侧和p侧电极。 n侧和p侧电极中的一个穿过n型和p型半导体层之一，n型和p型半导体层设置得更靠近衬底而不是连接的目的，并且其端部位于另一半导电层内 层。 n侧和p侧电极中的另一个从与衬底的一侧相反的另一侧穿过衬底，并且其末端位于设置在更靠近衬底的一个半导体层内。

公开(公告)号：US08217280B2

公开(公告)日：2012-07-10

申请号：US13017544

申请日：2011-01-31

申请人： Shigenobu Sekine ,  Yurina Sekine ,  Yoshiharu Kuwana

发明人： Shigenobu Sekine ,  Yurina Sekine ,  Yoshiharu Kuwana

IPC分类号： H05K1/11

CPC分类号： H01L21/76898 ,  H01L23/481 ,  H01L2924/0002 ,  H05K3/4038 ,  H05K3/4061 ,  H05K3/4614 ,  H05K2201/0215 ,  H05K2201/0218 ,  H05K2201/0305 ,  H05K2201/0394 ,  H05K2201/083 ,  H05K2203/0285 ,  H05K2203/104 ,  H05K2203/128 ,  Y10T29/49155 ,  Y10T29/49156 ,  H01L2924/00012 ,  H01L2924/00

摘要： A circuit board includes a substrate, a circuit pattern and a through electrode. The circuit pattern is disposed on one side of the substrate in a thickness direction thereof. The through electrode is filled in a through-hole formed in the substrate with one end connected to the circuit pattern. The circuit pattern and the through electrode each have an area containing a noble metal component (e.g., Au component) and are connected to each other therethrough.

摘要翻译： 电路板包括基板，电路图案和通孔电极。 电路图案沿其厚度方向设置在基板的一侧。 通孔电极填充在形成在基板中的通孔中，其一端连接到电路图案。 电路图案和贯通电极各自具有含有贵金属成分（例如Au成分）的区域，并且通过其彼此连接。