公开(公告)号：US20060118604A1

公开(公告)日：2006-06-08

申请号：US11005557

申请日：2004-12-05

申请人： Stephen Buchwalter ,  Claudius Feger ,  Peter Gruber ,  Sung Kang ,  Paul Lauro ,  Da-Yuan Shih

发明人： Stephen Buchwalter ,  Claudius Feger ,  Peter Gruber ,  Sung Kang ,  Paul Lauro ,  Da-Yuan Shih

IPC分类号： B23K35/12

CPC分类号： H05K3/3436 ,  B23K35/26 ,  H01L24/11 ,  H01L24/12 ,  H01L2224/0554 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13176 ,  H01L2224/13181 ,  H01L2224/13184 ,  H01L2224/1357 ,  H01L2224/13639 ,  H01L2224/13644 ,  H01L2224/13655 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01044 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/15787 ,  H05K3/3426 ,  H05K3/3468 ,  H05K2201/10287 ,  H05K2201/10992 ,  H05K2203/0113 ,  H05K2203/0415 ,  H05K2203/128 ,  Y02P70/613 ,  H01L2224/13099 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： Improved interconnects are produced by injection molded solder which fills mold arrays with molten solder so that columns that have much greater height to width aspect ratios greater than one are formed, rather than conventional flip chip bumps. The columns may have filler particles or reinforcing conductors therein. In the interconnect structures produced, the cost and time of a subsequent underfill step is reduced or avoided. The problem of incompatibility with optical interconnects between chips because underfills require high loading of silica fillers which scatter light, is solved, thus allowing flip chips to incorporate optical interconnects.

公开(公告)号：US20060177568A1

公开(公告)日：2006-08-10

申请号：US11049846

申请日：2005-02-04

申请人： Gareth Hougham ,  Leena Buchwalter ,  Stephen Buchwalter ,  Jon Casey ,  Claudius Feger ,  Matteo Flotta ,  Jeffrey Gelorme ,  Kathleen Hinge ,  Anurag Jain ,  Sung Kang ,  John Knickerbocker

发明人： Gareth Hougham ,  Leena Buchwalter ,  Stephen Buchwalter ,  Jon Casey ,  Claudius Feger ,  Matteo Flotta ,  Jeffrey Gelorme ,  Kathleen Hinge ,  Anurag Jain ,  Sung Kang ,  John Knickerbocker

IPC分类号： B05D5/12 ,  H05K3/00 ,  B05C1/00

CPC分类号： H05K3/4053 ,  B05D1/002 ,  H01L21/486 ,  H01L21/76898 ,  H05K2201/09509 ,  H05K2203/1554

摘要： The present disclosure relates generally to semiconductor, integrated circuits, and particularly, but not by way of limitation, to centrifugal methods of filling high-aspect ratio vias and trenches with powders, pastes, suspensions of materials to act as any of a conducting, structural support, or protective member of an electronic component.

摘要翻译： 本公开一般涉及半导体，集成电路，特别是但不限于，用于填充高纵横比通孔和沟槽的离心方法，其具有粉末，糊料，材料悬浮液，用作导电，结构 支撑或电子部件的保护构件。

公开(公告)号：US20150147851A1

公开(公告)日：2015-05-28

申请号：US14526268

申请日：2014-10-28

申请人： Claudius Feger ,  Michael A. Gaynes ,  Jae-Woong Nah ,  Da-Yuan Shih

发明人： Claudius Feger ,  Michael A. Gaynes ,  Jae-Woong Nah ,  Da-Yuan Shih

IPC分类号： H01L23/00 ,  H01L21/56

CPC分类号： H01L24/81 ,  H01L21/463 ,  H01L21/563 ,  H01L23/49816 ,  H01L23/544 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/743 ,  H01L24/83 ,  H01L24/92 ,  H01L2223/54426 ,  H01L2223/54473 ,  H01L2223/54486 ,  H01L2224/11462 ,  H01L2224/13082 ,  H01L2224/13147 ,  H01L2224/1605 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16238 ,  H01L2224/2741 ,  H01L2224/32225 ,  H01L2224/73104 ,  H01L2224/73204 ,  H01L2224/8113 ,  H01L2224/81132 ,  H01L2224/81192 ,  H01L2224/81193 ,  H01L2224/81203 ,  H01L2224/814 ,  H01L2224/81801 ,  H01L2224/81815 ,  H01L2224/83192 ,  H01L2224/83856 ,  H01L2224/9211 ,  H01L2224/94 ,  H01L2924/01029 ,  H01L2924/10253 ,  H01L2924/1461 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/014 ,  H01L2224/11 ,  H01L2224/27 ,  H01L2224/81 ,  H01L2224/83

摘要： A preassembly semiconductor device comprises chip soldering structures on a semiconductor chip and substrate soldering structures on a substrate corresponding to the chip soldering structures. The substrate soldering structures extend toward the chip soldering structures for forming solder connections with the chip soldering structures. The chip and the substrate are in preassembly positions relative to one another. The height of the substrate soldering structures is greater than the height of the chip soldering structures. A pre-applied underfill is contiguous with the substrate and is sufficiently thick so as to extend substantially no further than the full height of the substrate soldering structures. In another embodiment the height of the chip soldering structures is greater than the height of the substrate soldering structures and the pre-applied underfill is contiguous with the semiconductor chip and sufficiently thick so as to extend substantially no further than the full height of the chip soldering structures. A process comprises manufacturing semiconductor assemblies from these devices by soldering the chip and the substrate to one another

公开(公告)号：US08963340B2

公开(公告)日：2015-02-24

申请号：US13231594

申请日：2011-09-13

申请人： Claudius Feger ,  Michael A. Gaynes ,  Jae-Woong Nah ,  Da-Yuan Shih

发明人： Claudius Feger ,  Michael A. Gaynes ,  Jae-Woong Nah ,  Da-Yuan Shih

IPC分类号： H01L23/52 ,  H01L23/48 ,  H01L27/146 ,  H01L23/498 ,  H01L21/56 ,  H01L23/544 ,  H01L23/00

CPC分类号： H01L24/81 ,  H01L21/463 ,  H01L21/563 ,  H01L23/49816 ,  H01L23/544 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/743 ,  H01L24/83 ,  H01L24/92 ,  H01L2223/54426 ,  H01L2223/54473 ,  H01L2223/54486 ,  H01L2224/11462 ,  H01L2224/13082 ,  H01L2224/13147 ,  H01L2224/1605 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16238 ,  H01L2224/2741 ,  H01L2224/32225 ,  H01L2224/73104 ,  H01L2224/73204 ,  H01L2224/8113 ,  H01L2224/81132 ,  H01L2224/81192 ,  H01L2224/81193 ,  H01L2224/81203 ,  H01L2224/814 ,  H01L2224/81801 ,  H01L2224/81815 ,  H01L2224/83192 ,  H01L2224/83856 ,  H01L2224/9211 ,  H01L2224/94 ,  H01L2924/01029 ,  H01L2924/10253 ,  H01L2924/1461 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/014 ,  H01L2224/11 ,  H01L2224/27 ,  H01L2224/81 ,  H01L2224/83

摘要： A preassembly semiconductor device comprises substrate soldering structures extending toward chip soldering structures for forming solder connections with the chip soldering structures, i.e., the chip and the substrate are in preassembly positions relative to one another. The height of the substrate soldering structures is greater than the height of the chip soldering structures. A pre-applied underfill is contiguous with the substrate and is sufficiently thick so as to extend substantially no further than the full height of the substrate soldering structures. In another embodiment the height of the chip soldering structures is greater than the height of the substrate soldering structures and the pre-applied underfill is contiguous with the semiconductor chip and sufficiently thick so as to extend substantially no further than the full height of the chip soldering structures. A process comprises manufacturing semiconductor assemblies from these devices by soldering the semiconductor chip and the substrate to one another.

摘要翻译： 预组装半导体器件包括朝向芯片焊接结构延伸的衬底焊接结构，用于形成与芯片焊接结构的焊接连接，即，芯片和衬底相对于彼此处于预组装位置。 基板焊接结构的高度大于芯片焊接结构的高度。 预先施加的底部填充物与基底相邻并且足够厚以便基本上不超过基底焊接结构的全高度延伸。 在另一个实施例中，芯片焊接结构的高度大于衬底焊接结构的高度，并且预先施加的底部填充物与半导体芯片邻接并且足够厚以便基本上不超过芯片焊接的全部高度 结构。 一种方法包括通过将半导体芯片和衬底相互焊接来从这些器件制造半导体组件。

公开(公告)号：US07523852B2

公开(公告)日：2009-04-28

申请号：US11005557

申请日：2004-12-05

申请人： Stephen L. Buchwalter ,  Claudius Feger ,  Peter A. Gruber ,  Sung K. Kang ,  Paul A. Lauro ,  Da-Yuan Shih

发明人： Stephen L. Buchwalter ,  Claudius Feger ,  Peter A. Gruber ,  Sung K. Kang ,  Paul A. Lauro ,  Da-Yuan Shih

IPC分类号： B23K35/12

CPC分类号： H05K3/3436 ,  B23K35/26 ,  H01L24/11 ,  H01L24/12 ,  H01L2224/0554 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13176 ,  H01L2224/13181 ,  H01L2224/13184 ,  H01L2224/1357 ,  H01L2224/13639 ,  H01L2224/13644 ,  H01L2224/13655 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01044 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/15787 ,  H05K3/3426 ,  H05K3/3468 ,  H05K2201/10287 ,  H05K2201/10992 ,  H05K2203/0113 ,  H05K2203/0415 ,  H05K2203/128 ,  Y02P70/613 ,  H01L2224/13099 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： Improved interconnects are produced by injection molded solder which fills mold arrays with molten solder so that columns that have much greater height to width aspect ratios greater than one are formed, rather than conventional flip chip bumps. The columns may have filler particles or reinforcing conductors therein. In the interconnect structures produced, the cost and time of a subsequent underfill step is reduced or avoided. The problem of incompatibility with optical interconnects between chips because underfills require high loading of silica fillers which scatter light, is solved, thus allowing flip chips to incorporate optical interconnects.

摘要翻译： 改进的互连通过注射成型的焊料生产，该焊料用熔融焊料填充模具阵列，使得形成具有大于1的高宽比宽高比的柱而不是传统的倒装芯片凸块。 该列可以在其中具有填料颗粒或增强导体。 在所生产的互连结构中，减少或避免了后续底部填充步骤的成本和时间。 与芯片之间的光学互连不兼容的问题，因为底部填充物需要高散射光的二氧化硅填料的高负载，因此可以使倒装芯片结合光学互连。

公开(公告)号：US20130062757A1

公开(公告)日：2013-03-14

申请号：US13231594

申请日：2011-09-13

申请人： Claudius Feger ,  Michael A. Gaynes ,  Jae-Woong Nah ,  Da-Yuan Shih

发明人： Claudius Feger ,  Michael A. Gaynes ,  Jae-Woong Nah ,  Da-Yuan Shih

IPC分类号： H01L23/498 ,  H01L21/50

CPC分类号： H01L24/81 ,  H01L21/463 ,  H01L21/563 ,  H01L23/49816 ,  H01L23/544 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/743 ,  H01L24/83 ,  H01L24/92 ,  H01L2223/54426 ,  H01L2223/54473 ,  H01L2223/54486 ,  H01L2224/11462 ,  H01L2224/13082 ,  H01L2224/13147 ,  H01L2224/1605 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16238 ,  H01L2224/2741 ,  H01L2224/32225 ,  H01L2224/73104 ,  H01L2224/73204 ,  H01L2224/8113 ,  H01L2224/81132 ,  H01L2224/81192 ,  H01L2224/81193 ,  H01L2224/81203 ,  H01L2224/814 ,  H01L2224/81801 ,  H01L2224/81815 ,  H01L2224/83192 ,  H01L2224/83856 ,  H01L2224/9211 ,  H01L2224/94 ,  H01L2924/01029 ,  H01L2924/10253 ,  H01L2924/1461 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/014 ,  H01L2224/11 ,  H01L2224/27 ,  H01L2224/81 ,  H01L2224/83

摘要： A preassembly semiconductor device comprises substrate soldering structures extending toward chip soldering structures for forming solder connections with the chip soldering structures, i.e., the chip and the substrate are in preassembly positions relative to one another. The height of the substrate soldering structures is greater than the height of the chip soldering structures. A pre-applied underfill is contiguous with the substrate and is sufficiently thick so as to extend substantially no further than the full height of the substrate soldering structures. In another embodiment the height of the chip soldering structures is greater than the height of the substrate soldering structures and the pre-applied underfill is contiguous with the semiconductor chip and sufficiently thick so as to extend substantially no further than the full height of the chip soldering structures. A process comprises manufacturing semiconductor assemblies from these devices by soldering the semiconductor chip and the substrate to one another.

摘要翻译： 预组装半导体器件包括朝向芯片焊接结构延伸的衬底焊接结构，用于形成与芯片焊接结构的焊接连接，即，芯片和衬底相对于彼此处于预组装位置。 基板焊接结构的高度大于芯片焊接结构的高度。 预先施加的底部填充物与基底相邻并且足够厚以便基本上不超过基底焊接结构的全高度延伸。 在另一个实施例中，芯片焊接结构的高度大于衬底焊接结构的高度，并且预先施加的底部填充物与半导体芯片邻接并且足够厚以便基本上不超过芯片焊接的全部高度 结构。 一种方法包括通过将半导体芯片和衬底相互焊接来从这些器件制造半导体组件。

公开(公告)号：US20050250248A1

公开(公告)日：2005-11-10

申请号：US11154794

申请日：2005-06-15

申请人： Stephen Buchwalter ,  Claudius Feger ,  Gareth Hougham ,  Nancy LaBianca ,  Hosadurga Shobha

发明人： Stephen Buchwalter ,  Claudius Feger ,  Gareth Hougham ,  Nancy LaBianca ,  Hosadurga Shobha

IPC分类号： C08G65/26 ,  H01L21/56 ,  H01L23/29 ,  H01L21/44

CPC分类号： C08G65/2654 ,  H01L21/563 ,  H01L23/293 ,  H01L24/29 ,  H01L2224/16225 ,  H01L2224/274 ,  H01L2224/32225 ,  H01L2224/73104 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/10253 ,  H01L2924/12042 ,  Y10T428/12528 ,  Y10T428/31511 ,  H01L2924/00 ,  H01L2224/27 ,  H01L2224/11 ,  H01L2224/0401

摘要： A reworkable thermoset epoxy-containing material that allows for a reworkable assembly such as a reworkable waferlevel underfilled miocroelectronic package. A method for using the reworkable thermoset material in the formation of a microelectronic package using this material.

摘要翻译： 可重复使用的热固性环氧树脂材料，其允许可再加工的组件，例如可再加工的晶片级底部填充的电子包装。 使用该材料在形成微电子封装中使用可再加工热固性材料的方法。

公开(公告)号：US08178153B2

公开(公告)日：2012-05-15

申请号：US11395857

申请日：2006-03-31

申请人： Claudius Feger ,  Maurice McGlashan-Powell ,  Ijeoma M. Nnebe

发明人： Claudius Feger ,  Maurice McGlashan-Powell ,  Ijeoma M. Nnebe

IPC分类号： B05D5/12 ,  H05K7/20

CPC分类号： H01L23/3735 ,  H01L23/34 ,  H01L2924/0002 ,  H01L2924/00

摘要： A heat transfer control structure and a method for fabrication thereof includes at least one heat transfer control layer interposed between and contacting a heat source material and a heat sink material. The at least one heat transfer control layer is selected predicated upon thermal phonon spectra overlap between the heat source material, the at least one heat transfer control layer and the heat sink material. The at least one heat transfer control layer may enhance or retard heat transfer between the heat source material and the heat sink material. The at least one heat transfer control layer may be selected based upon a value of a thermal phonon correlating parameter such as a Debye temperature, a density or a lattice constant.

摘要翻译： 传热控制结构及其制造方法包括插入在热源材料和散热材料之间并与之接触的至少一个传热控制层。 根据热源材料，至少一个传热控制层和散热材料之间的热声子光谱重叠来选择至少一个传热控制层。 至少一个传热控制层可以增强或延缓热源材料和散热材料之间的热传递。 可以基于诸如德拜温度，密度或晶格常数的热声子相关参数的值来选择至少一个传热控制层。

公开(公告)号：US20120117666A1

公开(公告)日：2012-05-10

申请号：US13382814

申请日：2010-04-13

申请人： Stefano S. Oggioni ,  Vincenzo Condorelli ,  Claudius Feger

发明人： Stefano S. Oggioni ,  Vincenzo Condorelli ,  Claudius Feger

IPC分类号： G06F21/00

CPC分类号： G06F21/87 ,  G06F2221/2107 ,  G06F2221/2131 ,  H01L23/576 ,  H01L2224/16225 ,  Y10S257/922

摘要： An arrangement for the protection of cryptographic keys and codes from being compromised by external tampering, wherein the arrangement is utilized within a multilayered securing structure. More particularly, there is provided a multilayered securing structure for the protection of cryptographic keys and codes, which may be subject to potential tampering when employed in computers and/or telecommunication systems. A method is provided for producing such multilayered securing structures within a modular substrate with the intent to protect cryptographic keys and codes which are employed in computers and/or telecommunication systems from the dangers of potential tampering or unauthorized access.

摘要翻译： 用于保护加密密钥和代码免受外部篡改损害的布置，其中该布置在多层固定结构内使用。 更具体地，提供了一种用于保护加密密钥和代码的多层固定结构，当在计算机和/或电信系统中使用密钥和密码时，可能会受到潜在的篡改。 提供了一种用于在模块化基板内制造这种多层固定结构的方法，其目的是保护在计算机和/或电信系统中使用的加密密钥和代码免受潜在篡改或未授权访问的危险。

公开(公告)号：US07981849B2

公开(公告)日：2011-07-19

申请号：US11683825

申请日：2007-03-08

申请人： Claudius Feger ,  Jeffrey D. Gelorme ,  Sushumna Iruvanti ,  Rajneesh Kumar ,  Ijeoma M. Nnebe

发明人： Claudius Feger ,  Jeffrey D. Gelorme ,  Sushumna Iruvanti ,  Rajneesh Kumar ,  Ijeoma M. Nnebe

IPC分类号： C10M145/24 ,  C10M145/22 ,  C10M145/14 ,  C10M143/00 ,  C10M125/04 ,  C10M125/10 ,  C10M125/20

CPC分类号： H01L23/3737 ,  C10M169/02 ,  C10M171/02 ,  C10M2201/0413 ,  C10M2201/053 ,  C10M2201/0613 ,  C10M2201/0623 ,  C10M2201/1006 ,  C10M2201/1023 ,  C10M2203/1025 ,  C10M2203/1045 ,  C10M2205/02 ,  C10M2205/04 ,  C10M2207/401 ,  C10M2209/084 ,  C10M2209/102 ,  C10M2209/103 ,  C10M2209/1033 ,  C10M2211/083 ,  C10M2217/044 ,  C10M2229/02 ,  C10M2229/025 ,  C10N2220/00 ,  C10N2220/082 ,  C10N2220/084 ,  C10N2220/086 ,  C10N2230/00 ,  C10N2230/02 ,  C10N2230/08 ,  C10N2240/20 ,  C10N2250/18 ,  H01L2924/0002 ,  H01L2924/00

摘要： A reversible thermal thickening grease for microelectronic packages, in which the grease contains filler particles; at least one polymer; and a binder; in which the filler particles are dispersed within the binder, in which one or more segments of the at least one polymer may be attached to the filler particles prior to dispersion in the binder, and in which the polymer collapses at temperatures below a Theta temperature and swells at temperatures above a Theta temperature. During the operation of a microelectronic package, grease pump-out and air proliferation are minimized with use of the reversible thermal thickening grease, while grease fluidity is retained under repetitive thermal stresses.

摘要翻译： 用于微电子封装的可逆热增稠润滑脂，其中润滑脂含有填料颗粒; 至少一种聚合物; 和粘合剂; 其中所述填料颗粒分散在所述粘合剂内，其中所述至少一种聚合物的一个或多个链段可以在分散在所述粘合剂中之前附着到所述填料颗粒上，并且其中所述聚合物在低于所述陶瓷温度的温度下塌陷， 在高于Theta温度的温度下膨胀。 在微电子封装的运行过程中，使用可逆的热增稠润滑脂使润滑脂泵出和空气扩散最小化，同时在重复的热应力下保持润滑脂的流动性。