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1.
公开(公告)号:US5104695A
公开(公告)日:1992-04-14
申请号:US404803
申请日:1989-09-08
IPC分类号: C23C14/24
CPC分类号: C23C14/243
摘要: A method and apparatus for depositing the material onto a substrate is provided. The apparatus includes a mesh member which has impregnated therein the material which is to be vapor deposited. The mesh member with the material thereon is heated to vaporize the material and the vaporized material is then deposited onto the desired substrate. Preferably the material that is deposited is maintained in a crucible having an opening and the mesh member is disposed over the opening. The material in the crucible is vaporized and condensed onto the mesh member, and the condensed material wicks through the mesh member and then revaporizes from the top of the mesh member and is deposited onto the substrates.
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公开(公告)号:US06951775B2
公开(公告)日:2005-10-04
申请号:US10604164
申请日:2003-06-28
CPC分类号: B23K3/0623 , B23K2101/40 , H01L24/02 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/12 , H01L24/13 , H01L24/74 , H01L2221/68359 , H01L2224/0345 , H01L2224/0401 , H01L2224/05006 , H01L2224/05018 , H01L2224/05027 , H01L2224/05147 , H01L2224/05166 , H01L2224/05171 , H01L2224/05558 , H01L2224/05568 , H01L2224/05572 , H01L2224/05599 , H01L2224/05644 , H01L2224/05647 , H01L2224/1145 , H01L2224/11472 , H01L2224/11849 , H01L2224/13022 , H01L2224/13023 , H01L2224/13116 , H01L2224/16 , H01L2224/742 , H01L2224/94 , H01L2924/00013 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/01022 , H01L2924/01029 , H01L2924/01042 , H01L2924/0105 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/04941 , H01L2924/1305 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/00014 , H01L2224/11 , H01L2224/03 , H01L2224/13099 , H01L2224/05099 , H01L2224/13599 , H01L2224/29099 , H01L2224/29599 , H01L2924/00 , H01L2224/05552
摘要: A method of forming a semiconductor interconnect including, in the order recited: (a) providing a semiconductor wafer; (b) forming bonding pads in a terminal wiring level on the frontside of the wafer; (c) reducing the thickness of the wafer; (d) forming solder bumps on the bonding pads; and (e) dicing the wafer into bumped semiconductor chips.
摘要翻译: 一种形成半导体互连的方法,包括:(a)提供半导体晶片; (b)在晶片的前侧的端子布线层中形成接合焊盘; (c)减小晶片的厚度; (d)在焊盘上形成焊料凸块; 和(e)将晶片切割成凸起的半导体芯片。
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公开(公告)号:US07288492B2
公开(公告)日:2007-10-30
申请号:US11184695
申请日:2005-07-19
CPC分类号: B23K3/0623 , B23K2101/40 , H01L24/02 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/12 , H01L24/13 , H01L24/74 , H01L2221/68359 , H01L2224/0345 , H01L2224/0401 , H01L2224/05006 , H01L2224/05018 , H01L2224/05027 , H01L2224/05147 , H01L2224/05166 , H01L2224/05171 , H01L2224/05558 , H01L2224/05568 , H01L2224/05572 , H01L2224/05599 , H01L2224/05644 , H01L2224/05647 , H01L2224/1145 , H01L2224/11472 , H01L2224/11849 , H01L2224/13022 , H01L2224/13023 , H01L2224/13116 , H01L2224/16 , H01L2224/742 , H01L2224/94 , H01L2924/00013 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/01022 , H01L2924/01029 , H01L2924/01042 , H01L2924/0105 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/04941 , H01L2924/1305 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/00014 , H01L2224/11 , H01L2224/03 , H01L2224/13099 , H01L2224/05099 , H01L2224/13599 , H01L2224/29099 , H01L2224/29599 , H01L2924/00 , H01L2224/05552
摘要: A method of forming a semiconductor interconnect including, in the order recited: (a) providing a semiconductor wafer; (b) forming bonding pads in a terminal wiring level on the frontside of the wafer; (c) reducing the thickness of the wafer; (d) forming solder bumps on the bonding pads; and (e) dicing the wafer into bumped semiconductor chips.
摘要翻译: 一种形成半导体互连的方法,包括:(a)提供半导体晶片; (b)在晶片的前侧的端子布线层中形成接合焊盘; (c)减小晶片的厚度; (d)在焊盘上形成焊料凸块; 和(e)将晶片切割成凸起的半导体芯片。
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公开(公告)号:US07138326B2
公开(公告)日:2006-11-21
申请号:US10625635
申请日:2003-07-23
申请人: Harry D. Cox , David P. Daniel , Leonard J. Gardecki , Albert J. Gregoritsch, III , Ruth A. Machell Julianelle , Charles H. Keeler , Doris P. Pulaski , Mary A. Schaffer , David L. Smith , David J. Specht , Adolf E. Wirsing
发明人: Harry D. Cox , David P. Daniel , Leonard J. Gardecki , Albert J. Gregoritsch, III , Ruth A. Machell Julianelle , Charles H. Keeler , Doris P. Pulaski , Mary A. Schaffer , David L. Smith , David J. Specht , Adolf E. Wirsing
IPC分类号: H01L21/44
CPC分类号: H01L23/528 , H01L23/544 , H01L24/10 , H01L24/11 , H01L24/13 , H01L2223/54406 , H01L2223/54493 , H01L2224/05001 , H01L2224/05022 , H01L2224/05111 , H01L2224/05124 , H01L2224/05147 , H01L2224/05171 , H01L2224/05568 , H01L2224/05572 , H01L2224/05573 , H01L2224/05644 , H01L2224/05647 , H01L2224/13 , H01L2224/13099 , H01L2224/131 , H01L2224/13611 , H01L2924/0001 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01018 , H01L2924/0102 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01057 , H01L2924/01075 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/15787 , H01L2924/00014 , H01L2924/00
摘要: A shadow mask for depositing solder bumps includes additional dummy holes located adjacent holes corresponding to most of the perimeter chips of the wafer. The additional dummy provide more uniform plasma etching of contacts of the wafer, improve etching of contacts of perimeter chips, and lower contact resistance of contacts of perimeter chips. The extra holes also provide solder bumps outside the perimeter chips that can be used to support a second shadow mask for deposition of an additional material, such as tin, on the reflowed solder bumps for mounting the chips on a plastic substrate at low temperature. An improved mask to wafer alignment aid is formed from standard solder bumps. The improved alignment aid avoids damage to test probes and provides improved course alignment.
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公开(公告)号:US06706621B2
公开(公告)日:2004-03-16
申请号:US10302412
申请日:2002-11-22
申请人: Harry D. Cox , David P. Daniel , Leonard J. Gardecki , Albert J. Gregoritsch, III , Ruth A. Machell Julianelle , Charles H. Keeler , Doris P. Pulaski , Mary A. Schaffer , David L. Smith , David J. Specht , Adolf E. Wirsing
发明人: Harry D. Cox , David P. Daniel , Leonard J. Gardecki , Albert J. Gregoritsch, III , Ruth A. Machell Julianelle , Charles H. Keeler , Doris P. Pulaski , Mary A. Schaffer , David L. Smith , David J. Specht , Adolf E. Wirsing
IPC分类号: H01L2144
CPC分类号: H01L23/528 , H01L23/544 , H01L24/10 , H01L24/11 , H01L24/13 , H01L2223/54406 , H01L2223/54493 , H01L2224/05001 , H01L2224/05022 , H01L2224/05111 , H01L2224/05124 , H01L2224/05147 , H01L2224/05171 , H01L2224/05568 , H01L2224/05572 , H01L2224/05573 , H01L2224/05644 , H01L2224/05647 , H01L2224/13 , H01L2224/13099 , H01L2224/131 , H01L2224/13611 , H01L2924/0001 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01018 , H01L2924/0102 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01057 , H01L2924/01075 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/15787 , H01L2924/00014 , H01L2924/00
摘要: A shadow mask for depositing solder bumps includes additional dummy holes located adjacent holes corresponding to most of the perimeter chips of the wafer. The additional dummy provide more uniform plasma etching of contacts of the wafer, improve etching of contacts of perimeter chips, and lower contact resistance of contacts of perimeter chips. The extra holes also provide solder bumps outside the perimeter chips that can be used to support a second shadow mask for deposition of an additional material, such as tin, on the reflowed solder bumps for mounting the chips on a plastic substrate at low temperature. An improved mask to wafer alignment aid is formed from standard solder bumps. The improved alignment aid avoids damage to test probes and provides improved course alignment.
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公开(公告)号:US5457345A
公开(公告)日:1995-10-10
申请号:US182310
申请日:1994-01-14
申请人: Herbert C. Cook , Paul A. Farrar, Sr. , Robert M. Geffken , William T. Motsiff , Adolf E. Wirsing
发明人: Herbert C. Cook , Paul A. Farrar, Sr. , Robert M. Geffken , William T. Motsiff , Adolf E. Wirsing
IPC分类号: H01L21/28 , H01L21/60 , H01L23/485 , H01L29/45 , H01L23/48 , H01L29/46 , H01L29/54 , H01L29/62
CPC分类号: H01L24/11 , H01L24/13 , H01L29/456 , H01L2224/13113 , H01L2224/13116 , H01L2924/00013 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01022 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/0104 , H01L2924/01042 , H01L2924/01046 , H01L2924/01072 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014
摘要: A metallization composite comprises a refractory metal, nickel, and copper. The refractory metal is preferably titanium (Ti), but other suitable refractory metals such as zirconium and hafnium can also be utilized. An additional optional layer of gold can overlie the copper. The metallization composite is used to connect a solder contact to a semiconductor substrate.
摘要翻译: 金属化复合材料包括难熔金属,镍和铜。 难熔金属优选为钛(Ti),但也可以使用其它合适的难熔金属如锆和铪。 另外一个可选的金层可以覆盖铜。 金属化复合材料用于将焊料接触件连接到半导体衬底。
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公开(公告)号:US5251806A
公开(公告)日:1993-10-12
申请号:US870647
申请日:1992-04-16
申请人: Birendra N. Agarwala , Aziz M. Ahsan , Arthur Bross , Mark F. Chadurjian , Nicholas G. Koopman , Li-Chung Lee , Karl J. Puttlitz , Sudipta K. Ray , James G. Ryan , Joseph G. Schaefer , Kamalesh K. Srivastava , Paul A. Totta , Erick G. Walton , Adolf E. Wirsing
发明人: Birendra N. Agarwala , Aziz M. Ahsan , Arthur Bross , Mark F. Chadurjian , Nicholas G. Koopman , Li-Chung Lee , Karl J. Puttlitz , Sudipta K. Ray , James G. Ryan , Joseph G. Schaefer , Kamalesh K. Srivastava , Paul A. Totta , Erick G. Walton , Adolf E. Wirsing
IPC分类号: H01L21/60 , H01L23/485 , H05K3/34 , H01L21/283
CPC分类号: H01L24/12 , H01L24/11 , H01L2224/11901 , H01L2224/13082 , H01L2224/131 , H01L2224/13111 , H01L2224/1357 , H01L2224/13582 , H01L2224/13583 , H01L2224/13647 , H01L2224/13655 , H01L2224/13657 , H01L2224/1366 , H01L2224/13664 , H01L2224/13666 , H01L2224/13669 , H01L2224/1367 , H01L2224/13671 , H01L2224/13672 , H01L2224/13676 , H01L2224/13679 , H01L2224/1368 , H01L2224/13681 , H01L2224/13684 , H01L24/16 , H01L2924/00013 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01018 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01039 , H01L2924/0104 , H01L2924/01041 , H01L2924/01042 , H01L2924/01044 , H01L2924/01046 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/10253 , H01L2924/10329 , H01L2924/15787 , H05K3/3431 , H05K3/3457
摘要: The present invention relates generally to a new interconnection and a method for making the same, and more particularly, to an elongated solder interconnection and a method for making the same. On an electronic carrier, a pad is formed on which a solder mass is deposited and capped with a metal layer, thereby forming an elongated solder interconnection. A further elongated solder interconnection can now be formed by forming a second solder mass on the first solder mass that has been capped by a metal layer. Additional elongated solder interconnection can be formed by capping the preceding solder mass and/or the last solder mass with a metal capping layer. Alternatively, the encapsulating layer can be in the form of a sidewall spacer formed on the sidewalls of the solder mass.
摘要翻译: 本发明一般涉及新的互连及其制造方法,更具体地说,涉及一种细长的焊料互连及其制造方法。 在电子载体上,形成焊盘,在其上沉积焊料块并用金属层封盖,从而形成细长的焊料互连。 现在可以通过在已经被金属层覆盖的第一焊料块上形成第二焊料块来形成另外细长的焊料互连。 可以通过用金属覆盖层封盖前述焊料块和/或最后的焊料块来形成附加的细长焊料互连。 或者,封装层可以是形成在焊料块的侧壁上的侧壁间隔物的形式。
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公开(公告)号:US5130779A
公开(公告)日:1992-07-14
申请号:US540256
申请日:1990-06-19
申请人: Birendra N. Agarwala , Aziz M. Ahsan , Arthur Bross , Mark F. Chadurjian , Nicholas G. Koopman , Li-Chung Lee , Karl J. Puttlitz , Sudipta K. Ray , James G. Ryan , Joseph G. Schaefer , Kamalesh K. Srivastava , Paul A. Totta , Erick G. Walton , Adolf E. Wirsing
发明人: Birendra N. Agarwala , Aziz M. Ahsan , Arthur Bross , Mark F. Chadurjian , Nicholas G. Koopman , Li-Chung Lee , Karl J. Puttlitz , Sudipta K. Ray , James G. Ryan , Joseph G. Schaefer , Kamalesh K. Srivastava , Paul A. Totta , Erick G. Walton , Adolf E. Wirsing
IPC分类号: H01L21/60 , H01L23/485 , H05K3/34
CPC分类号: H01L24/13 , H01L24/11 , H01L24/16 , H01L24/81 , H01L2224/13082 , H01L2224/131 , H01L2224/1357 , H01L2224/13582 , H01L2224/13583 , H01L2224/13647 , H01L2224/13655 , H01L2224/13657 , H01L2224/1366 , H01L2224/13664 , H01L2224/13666 , H01L2224/13669 , H01L2224/1367 , H01L2224/13671 , H01L2224/13672 , H01L2224/13676 , H01L2224/13679 , H01L2224/1368 , H01L2224/13681 , H01L2224/13684 , H01L2224/81801 , H01L2924/00013 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01018 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01039 , H01L2924/0104 , H01L2924/01041 , H01L2924/01042 , H01L2924/01044 , H01L2924/01046 , H01L2924/0105 , H01L2924/01051 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/10253 , H01L2924/10329 , H01L2924/15787 , H05K3/3431 , H05K3/3457
摘要: The present invention relates generally to a new interconnection and a method for making the same, and more particularly, to an elongated solder interconnection and a method for making the same. On an electronic carrier, a pad is formed on which a solder mass is deposited and capped with a metal layer, thereby forming an elongated solder interconnection. A further elongated solder interconnection can now be formed by forming a second solder mass on the first solder mass that has been capped by a metal layer. Additional elongated solder interconnection can be formed by capping the preceding solder mass and/or the last solder mass with a metal capping layer. Alternatively, the encapsulating layer can be in the form of a sidewall spacer formed on the sidewalls of the solder mass.
摘要翻译: 本发明一般涉及新的互连及其制造方法,更具体地说,涉及一种细长的焊料互连及其制造方法。 在电子载体上,形成焊盘,在其上沉积焊料块并用金属层封盖,从而形成细长的焊料互连。 现在可以通过在已经被金属层覆盖的第一焊料块上形成第二焊料块来形成另外细长的焊料互连。 可以通过用金属覆盖层封盖前述焊料块和/或最后的焊料块来形成附加的细长焊料互连。 或者,封装层可以是形成在焊料块的侧壁上的侧壁间隔物的形式。
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