摘要:
In a semiconductor strain detector, the temperature characteristic of the output of a zero-point temperature compensating circuit is added to the zero-point temperature characteristic of the output of a bridge circuit composed of strain gauges, to perform a zero-point temperature compensation of the final output. Further, two kinds of diffusion resistors having different surface impurity densities are used in each amplifying circuit to perform a sensitivity-temperature compensation in which a temperature coefficient of sensitivity is considered up to the second-order term.
摘要:
Solder is connected to the electrodes of the circuit board by using a temperature profile with a constant fusion temperature, a connection interface strength evaluation test is carried out on the soldered joints to obtain an appropriate reflow range free of decreases in the strength at the connection interface. On the basis of the appropriate reflow range obtained and using as the basis the chemical compound thickness which is determined uniquely by heat load, an appropriate reflow range in an optional temperature profile with one temperature peak is obtained. By carrying out connection in this appropriate reflow range, soldered joints can be obtained without decreases in the connection interface strength in the large-scale production stage.
摘要:
A waste gas stream containing toxic NF.sub.3 and optionally other gases, such as acidic fluoride gases, for example, HF, SiF.sub.4, MoF.sub.6 and WF.sub.6 is first treated with particles or ribbons of a Cr-containing Fe alloy at about 300.degree.-600.degree. C. to remove the NF.sub.3 content and, if desired, subsequently with an alkaline neutralizing agent in the form of pellets to remove the acidic fluoride contents, if any; said alloy containing preferably about 16-26% Cr and being used in a form of bed packed with said ribbons.
摘要:
An oscillator for producing an output signal having a predetermined frequency for use in an electronic timepiece. The oscillator comprises a miniature crystal vibrator having a high resonant frequency, a case housing the crystal vibrator, an integrated circuit comprising an oscillator circuit with the crystal vibrator, and a trimmer condenser for adjusting the high resonant frequency. The trimmer condenser is formed on an external recess portion of said case, and is connected with the crystal vibrator and integrated circuit by a circuit having low stray capacitances. The oscillator is therefor highly insensitive to external electric fields.
摘要:
In ultrasonic bonding of a metal terminal to a substrate pad, a thin buffer metal layer which is formed of a soft metal or a highly slidable metal is interposed between a terminal edge and a pad so as to prevent direct contact between an end of the terminal and the pad upon bonding. This makes it possible to prevent abrasion and a crack in the pad at the end of the terminal caused by pressure and an ultrasonic wave upon the ultrasonic bonding. This makes it possible to realize a compact bonded structure with high reliability.
摘要:
In an electronic device having an interposer substrate as an MCM structure, heat dissipation properties are enhanced while the reliability of joint between the interposer substrate and a motherboard is maintained. In the invention, a metal core base material of great heat capacity and high thermal conductivity is used for both the interposer substrate and the motherboard. Furthermore, a part where a core metal is exposed is provided on at least one of the interposer substrate and the motherboard. A solder joint pad is directly formed on the core metal exposed part, and the interposer substrate is solder-joined to the motherboard.
摘要:
In a semiconductor device according to the present invention, a first bare chip, and a second bare chip having a wider principal surface than that of the first bare chip are connected to one principal surface and the other principal surface of an interposer substrate, respectively. In the semiconductor device, a resin having a larger coefficient of linear expansion than that of the second bare chip is applied to a backgrind surface (a principal surface at an opposite side to the interposer substrate) of the second bare chip, thereby preventing the second bare chip from cracking due to warpage of the interposer substrate.
摘要:
In order to inhibit the connection failure due to the degradation of the connection interface strength of the electrode pad and the warp thereof in the semiconductor device having an electrode pad, a metal layer formed on the electrode pad, and a metal bump formed on the metal layer, in the present invention, gold (Au) is contained in the metal layer, the metal bump is made of solder mainly made of Sn and designed to have an average height H of 100 μm or less per unit area in the electrode pad, and the concentration of Au of the metal layer dissolved in the solder is set to 1.3×10−3 (Vol %) or less. More preferably, the metal bump contains palladium (Pd), and the solder coating for forming the metal bump on the electrode pad is performed by using the dipping and the paste printing in combination.
摘要:
The present invention provides a method for removing solder adhering to an LSI. In this method, a plate-shaped first member for causing molten solder to adhere thereto is mounted on top of a heater. An LSI is placed on top of the first member with the surface on which solder is attached facing downward. A second member for adding a load to the LSI is placed on top of the LSI. The heater is heated up to heat the first member and the LSI, and to melt the solder. The molten solder is transferred to the first member. A suction mechanism is positioned at a location a predetermined distance away from the top surface of the second member. The second member and the LSI are attracted by the suction mechanism, and the LSI is pulled away from the first member. The solder is thereby removed from the LSI.