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公开(公告)号:US09684193B2
公开(公告)日:2017-06-20
申请号:US14943599
申请日:2015-11-17
发明人: Geoff W. Taylor
IPC分类号: G02F1/017 , G02B6/35 , G02B6/134 , G02B6/13 , G02B6/124 , G02B6/125 , G02B6/12 , G02B6/293 , H01L45/00 , B82Y20/00 , G02F1/015
CPC分类号: G02F1/01708 , B82Y20/00 , G02B6/12007 , G02B6/124 , G02B6/125 , G02B6/131 , G02B6/1347 , G02B6/29338 , G02B6/3536 , G02F2001/0151 , G02F2001/0154 , H01L45/06 , Y10S977/755
摘要: A semiconductor device that includes an optical resonator spaced from a waveguide structure to provide for evanescent-wave optical coupling therebetween. The optical resonator includes a closed loop waveguide defined by an epitaxial layer structure that includes at least one quantum well. The semiconductor device also includes circuitry configured to supply an electrical signal that flows within the epitaxial layer structure of the closed loop waveguide. The electrical signal affects charge density in at least quantum well of the closed loop waveguide and controls refractive index of the closed loop waveguide. In one embodiment, the electrical signal is a DC current signal that flows within a vertical thyristor structure of the closed loop waveguide to control refractive index of the closed loop waveguide such that resonance frequency of the closed loop waveguide corresponds to a characteristic wavelength of light.
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公开(公告)号:US09590600B2
公开(公告)日:2017-03-07
申请号:US14578893
申请日:2014-12-22
发明人: Geoff W. Taylor
摘要: An optical flip-flop circuit that includes an optical thyristor configured to receive a digital optical signal input and produce a digital signal output based on the ON/OFF state of the digital optical signal input. The optical flip-flop circuit further includes control circuitry operably coupled to the terminals of the optical thyristor. The control circuitry is configured to control switching operation of the optical thyristor in response to the level of a digital electrical signal input.
摘要翻译: 一种光学触发器电路,包括配置成接收数字光信号输入并基于数字光信号输入的ON / OFF状态产生数字信号输出的光晶闸管。 光学触发器电路还包括可操作地耦合到光学晶闸管的端子的控制电路。 控制电路被配置为响应于数字电信号输入的电平来控制光晶闸管的开关操作。
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公开(公告)号:US09553715B2
公开(公告)日:2017-01-24
申请号:US14579066
申请日:2014-12-22
发明人: Geoff W. Taylor
IPC分类号: H04B10/00 , H04L7/00 , H04L7/033 , H04B10/2575
CPC分类号: H04L7/0075 , H04B10/2575 , H04B10/5161 , H04B10/541 , H04B10/5561 , H04B10/613 , H04L7/0331
摘要: An optical phase detector circuit is provided that is suitable for use in an optical phase lock loop. The optical phase detector includes a first optical flip-flop circuit configured to produce a first digital output based on ON/OFF state of a first digital optical input and a digital electrical control signal. A second optical flip-flop circuit is configured to produce a second digital output based on ON/OFF state of a second digital optical input and the digital electrical control signal. An AND gate is operably coupled to both the first and second optical flip-flops. The AND gate produces the digital electrical control signal for supply to the first and second optical flip-flop circuits according to an AND function of the first and second digital outputs produced by the first and second optical flip-flop circuits.
摘要翻译: 提供了一种适用于光锁相环的光相位检测电路。 光学相位检测器包括:第一光学触发器电路,被配置为基于第一数字光学输入和数字电气控制信号的ON / OFF状态产生第一数字输出。 第二光学触发器电路被配置为基于第二数字光输入和数字电控信号的ON / OFF状态产生第二数字输出。 与门可操作地耦合到第一和第二光学触发器两者。 根据第一和第二光触发器电路产生的第一和第二数字输出的与功能,与门产生数字电控信号,以提供给第一和第二光触发器电路。
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公开(公告)号:US09490336B1
公开(公告)日:2016-11-08
申请号:US14736552
申请日:2015-06-11
发明人: Geoff W. Taylor
IPC分类号: H01L29/45 , H01L21/324 , H01L21/3213 , H01L29/40 , H01L29/205 , H01L29/15
CPC分类号: H01L29/452 , H01L21/28575 , H01L21/32134 , H01L21/32135 , H01L29/0653 , H01L29/0843 , H01L29/1075 , H01L29/7783
摘要: A method of forming an integrated circuit includes depositing a multilayer metal stack on at least one contact layer of semiconductor material. The multilayer metal stack includes a bottom interface layer formed by a combination of indium and at least one high temperature metal on the at least one contact layer of semiconductor material, at least one barrier layer formed on the bottom interface layer, and a layer formed from at least one high temperature metal on the at least one barrier layer. The metal stack is heated such that indium of the bottom interface layer forms a low resistance interface to contact layer. The at least one barrier layer functions as a barrier to diffusion of indium from the bottom interface layer. Subsequent to the heating, the resultant multilayer metal stack can be patterned to form at least one electrode for a given device of the integrated circuit.
摘要翻译: 形成集成电路的方法包括在半导体材料的至少一个接触层上沉积多层金属堆叠。 多层金属堆叠包括在半导体材料的至少一个接触层上的铟和至少一种高温金属的组合形成的底部界面层,形成在底部界面层上的至少一个势垒层,以及由 至少一个阻挡层上的至少一个高温金属。 金属叠层被加热使得底部界面层的铟形成接触层的低电阻界面。 所述至少一个阻挡层用作从底部界面层扩散铟的屏障。 在加热之后,可以对所得到的多层金属堆叠进行构图以形成用于集成电路的给定器件的至少一个电极。
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公开(公告)号:US20160091738A1
公开(公告)日:2016-03-31
申请号:US14943599
申请日:2015-11-17
发明人: Geoff W. Taylor
CPC分类号: G02F1/01708 , B82Y20/00 , G02B6/12007 , G02B6/124 , G02B6/125 , G02B6/131 , G02B6/1347 , G02B6/29338 , G02B6/3536 , G02F2001/0151 , G02F2001/0154 , H01L45/06 , Y10S977/755
摘要: A semiconductor device that includes an optical resonator spaced from a waveguide structure to provide for evanescent-wave optical coupling therebetween. The optical resonator includes a closed loop waveguide defined by an epitaxial layer structure that includes at least one quantum well. The semiconductor device also includes circuitry configured to supply an electrical signal that flows within the epitaxial layer structure of the closed loop waveguide. The electrical signal affects charge density in at least quantum well of the closed loop waveguide and controls refractive index of the closed loop waveguide. In one embodiment, the electrical signal is a DC current signal that flows within a vertical thyristor structure of the closed loop waveguide to control refractive index of the closed loop waveguide such that resonance frequency of the closed loop waveguide corresponds to a characteristic wavelength of light.
摘要翻译: 一种半导体器件,其包括与波导结构间隔开的光学谐振器,以在其之间提供ev逝波光耦合。 光学谐振器包括由包括至少一个量子阱的外延层结构限定的闭环波导。 半导体器件还包括被配置为提供在闭环波导的外延层结构内流动的电信号的电路。 电信号影响闭环波导的至少量子阱中的电荷密度,并控制闭环波导的折射率。 在一个实施例中,电信号是在闭环波导的垂直晶闸管结构内流动的DC电流信号,以控制闭环波导的折射率,使得闭环波导的谐振频率对应于光的特征波长。
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公开(公告)号:US09201287B1
公开(公告)日:2015-12-01
申请号:US14698087
申请日:2015-04-28
发明人: Geoff W. Taylor
CPC分类号: G02F7/00 , G02F1/225 , G02F2203/055 , H03M1/00 , H03M1/12
摘要: A photonic analog-to-digital converter is provided that includes a tunable light source, an optical sampling clock source, an optical splitter and a plurality of optical signal processing channels. The tunable light source produces an optical signal at a variable wavelength corresponding to analog levels of an electrical input signal. The optical sampling clock source produces an optical sampling clock signal that defines a sequence of sampling periods. The optical splitter is operably coupled to the tunable light source. The optical splitter splits the optical signal produced by the tunable light source for supply to the plurality of optical signal processing channels. Each one of the optical signal processing channels includes a photonic filter and corresponding optoelectronic thyristor comparator that is operably coupled to the optical sampling clock source. The optoelectronic thyristor comparator operates as a discriminator that generates a digital electrical signal representing whether the optical signal produced by the tunable light source has a wavelength that lies within a predetermined wavelength quantization level during the sampling periods defined by the optical sampling clock source. The photonic analog-to-digital converter further includes circuitry that generates a digital word corresponding to the digital electrical signals generated by the optoelectronic thyristor comparators of the plurality of optical signal processing channels.
摘要翻译: 提供了一种光子模数转换器,其包括可调谐光源,光采样时钟源,光分路器和多个光信号处理通道。 可调谐光源以对应于电输入信号的模拟电平的可变波长产生光信号。 光采样时钟源产生定义采样周期序列的光采样时钟信号。 光分路器可操作地耦合到可调谐光源。 光分路器将由可调谐光源产生的光信号分离,以供给多个光信号处理通道。 每个光信号处理通道包括光子滤波器和可操作地耦合到光采样时钟源的相应的光电晶闸管比较器。 光电晶闸管比较器用作鉴别器,其产生数字电信号,该数字电信号表示在由光采样时钟源限定的采样周期期间由可调谐光源产生的光信号是否具有位于预定波长量化级内的波长。 光子模数转换器还包括产生对应于由多个光信号处理通道的光电晶闸管比较器产生的数字电信号的数字字的电路。
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公开(公告)号:US10038302B2
公开(公告)日:2018-07-31
申请号:US15450400
申请日:2017-03-06
发明人: Geoff W. Taylor
IPC分类号: H01S5/10 , G02B6/293 , G02B6/134 , G02B6/13 , H01S5/042 , H01S5/062 , H01S5/20 , H01S5/30 , H01L31/0352 , H01L31/0304 , H01L31/112 , H01L31/11 , H01L31/0232 , H01L31/18 , H01S5/343
CPC分类号: H01S5/1071 , G02B6/131 , G02B6/1347 , G02B6/29338 , H01L21/8252 , H01L27/0605 , H01L27/085 , H01L27/1443 , H01L29/083 , H01L29/1066 , H01L29/15 , H01L29/36 , H01L29/66401 , H01L29/74 , H01L29/7783 , H01L31/02327 , H01L31/03046 , H01L31/035209 , H01L31/035236 , H01L31/1105 , H01L31/1113 , H01L31/1129 , H01L31/1844 , H01L33/06 , H01L33/105 , H01S5/0228 , H01S5/0421 , H01S5/0424 , H01S5/0425 , H01S5/06203 , H01S5/06226 , H01S5/0625 , H01S5/1028 , H01S5/1032 , H01S5/1042 , H01S5/1075 , H01S5/125 , H01S5/183 , H01S5/187 , H01S5/2027 , H01S5/2063 , H01S5/2086 , H01S5/222 , H01S5/3054 , H01S5/309 , H01S5/34313
摘要: A semiconductor device includes an n-type ohmic contact layer, cathode and anode electrodes, p-type and n-type modulation doped quantum well (QW) structures, and first and second ion implant regions. The anode electrode is formed on the first ion implant region that contacts the p-type modulation doped QW structure and the cathode electrode is formed by patterning the first and second ion implant regions and the n-type ohmic contact layer. The semiconductor device is configured to operate as at least one of a diode laser and a diode detector. As the diode laser, the semiconductor device emits photons. As the diode detector, the semiconductor device receives an input optical light and generates a photocurrent.
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公开(公告)号:US09698457B2
公开(公告)日:2017-07-04
申请号:US14444629
申请日:2014-07-28
发明人: Geoff W. Taylor
CPC分类号: G02B6/29343 , G02B6/12007 , G02B6/122 , G02B6/124 , G02B6/29338 , G02B6/2938 , G02B6/29395 , G02B6/34 , G02B6/4274 , G02B2006/12104 , G02F1/011 , G02F2203/15 , H01P3/003 , H01P3/026 , H01S5/026 , H01S5/1032 , H01S5/125 , H01S5/4025 , H01S5/4087
摘要: A WDM transmitter and/or receiver optoelectronic integrated circuit includes a plurality of microresonators and corresponding waveguides and couplers that are integrally formed on a substrate. For the WDM transmitter, the microresonators and waveguides are configured to generate a plurality of optical signals at different wavelengths. Each coupler includes a resonant cavity waveguide that is configured to transmit one optical signal from one waveguide to the output waveguide such that the plurality of optical signals are multiplexed on the output waveguide. For the WDM receiver, an input waveguide is configured to provide for propagation of a plurality of optical signals at different wavelengths. Each coupler includes a resonant cavity waveguide that is configured to transmit at least one optical signal from the input waveguide to one waveguide. The waveguides and microresonators are configured to perform optical-to-electrical conversion of the plurality of optical signals at different wavelengths that propagate in the waveguides.
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公开(公告)号:US09684192B2
公开(公告)日:2017-06-20
申请号:US14943502
申请日:2015-11-17
发明人: Geoff W. Taylor
IPC分类号: G02F1/017 , G02B6/35 , G02B6/134 , G02B6/13 , H01L45/00 , G02B6/125 , G02B6/124 , G02B6/12 , G02B6/293 , B82Y20/00 , G02F1/015
CPC分类号: G02F1/01708 , B82Y20/00 , G02B6/12007 , G02B6/124 , G02B6/125 , G02B6/131 , G02B6/1347 , G02B6/29338 , G02B6/3536 , G02F2001/0151 , G02F2001/0154 , H01L45/06 , Y10S977/755
摘要: A semiconductor device that includes an optical resonator spaced from a waveguide structure to provide for evanescent-wave optical coupling therebetween. The optical resonator includes a closed loop waveguide defined by a vertical thyristor structure. In one embodiment, the vertical thyristor structure is formed by an epitaxial layer structure including complementary (both an n-type and a p-type) modulation doped quantum well interfaces formed between an N+ region and a P+ region.
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公开(公告)号:US09625647B2
公开(公告)日:2017-04-18
申请号:US14222841
申请日:2014-03-24
发明人: Geoff W. Taylor
IPC分类号: H01L29/10 , G02B6/134 , H01L27/144 , H01L31/0352 , H01S5/042 , H01L29/66 , H01L29/74 , H01L21/8252 , H01L29/778 , H01L27/06 , H01L27/085 , H01L31/111 , H01L33/10 , H01S5/0625 , H01S5/343 , H01S5/062 , H01S5/10 , H01S5/20 , H01S5/30 , H01S5/22
CPC分类号: H01S5/1071 , G02B6/131 , G02B6/1347 , G02B6/29338 , H01L21/8252 , H01L27/0605 , H01L27/085 , H01L27/1443 , H01L29/083 , H01L29/1066 , H01L29/15 , H01L29/36 , H01L29/66401 , H01L29/74 , H01L29/7783 , H01L31/02327 , H01L31/03046 , H01L31/035209 , H01L31/035236 , H01L31/1105 , H01L31/1113 , H01L31/1129 , H01L31/1844 , H01L33/06 , H01L33/105 , H01S5/0228 , H01S5/0421 , H01S5/0424 , H01S5/0425 , H01S5/06203 , H01S5/06226 , H01S5/0625 , H01S5/1028 , H01S5/1032 , H01S5/1042 , H01S5/1075 , H01S5/125 , H01S5/183 , H01S5/187 , H01S5/2027 , H01S5/2063 , H01S5/2086 , H01S5/222 , H01S5/3054 , H01S5/309 , H01S5/34313
摘要: A semiconductor device employs an epitaxial layer arrangement including a first ohmic contact layer and first modulation doped quantum well structure disposed above the first ohmic contact layer. The first ohmic contact layer has a first doping type, and the first modulation doped quantum well structure has a modulation doped layer of a second doping type. At least one isolation ion implant region is provided that extends through the first ohmic contact layer. The at least one isolation ion implant region can include oxygen ions. The at least one isolation ion implant region can define a region that is substantially free of charge carriers in order to reduce a characteristic capacitance of the device. A variety of high performance transistor devices (e.g., HFET and BICFETs) and optoelectronic devices can employ this device structure. Other aspects of wavelength-tunable microresonantors and related semiconductor fabrication methodologies are also described and claimed.
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