公开(公告)号：US06458912B1

公开(公告)日：2002-10-01

申请号：US09674916

申请日：2001-02-05

申请人： Takashi Kuroki ,  Yoshihiro Sakata ,  Tomomi Okumura ,  Atsushi Shibuya ,  Yuichi Okawa ,  Hideaki Oikawa ,  Kayako Yanagihara ,  Yasunori Yoshida ,  Masaji Yoshimura ,  Hiroyasu Kido ,  Shoji Tamai

发明人： Takashi Kuroki ,  Yoshihiro Sakata ,  Tomomi Okumura ,  Atsushi Shibuya ,  Yuichi Okawa ,  Hideaki Oikawa ,  Kayako Yanagihara ,  Yasunori Yoshida ,  Masaji Yoshimura ,  Hiroyasu Kido ,  Shoji Tamai

IPC分类号： C08G7300

CPC分类号： C08G73/1042 ,  C08G73/101 ,  C08G73/105

摘要： A thermoplastic polyimide having good thermal stability, comprising a repeating unit represented by the chemical formula (1), a molecular terminal being composed of the chemical formula (2) and/or chemical formula (3), characterized in that: a melt viscosity ratio calculated by the numerical formula (1) and/or the numerical formula (3) is within a numerical range shown in the numerical formula (2) and/or the numerical formula (4) and 1,3-bis(4-aminophenoxy)benzene represented by the chemical formula (3) for production of the above polyimide, characterized in that the content of an azo compound is from 0.0 to 0.2%. The thermoplastic polyimide of the present invention has excellent characteristics {circle around (1)} to {circle around (4)} described below. {circle around (1)} It is superior in thermal stability on melting. That is, the degree of lowering of the fluidity on melting with a lapse of time is small and it is possible to apply to conventional melt molding. {circle around (2)} It has high heat resistance. {circle around (3)} It is superior in productivity. {circle around (4)} It is superior in dimensional accuracy.

摘要翻译： 一种具有良好热稳定性的热塑性聚酰亚胺，其包含由化学式（1）表示的重复单元，由化学式（2）和/或化学式（3）组成的分子末端，其特征在于：熔体粘度比 由式（1）和/或数值式（3）计算的数值在数值式（2）和/或数值式（4）和1,3-双（4-氨基苯氧基） 由化学式（3）表示的用于制备上述聚酰亚胺的苯，其特征在于偶氮化合物的含量为0.0-0.2％。 本发明的热塑性聚酰亚胺具有以下所述的{圆周（1）}〜{圆周（4）}的特性。 {circle around（1）}熔融时的热稳定性优异。 也就是说，随着时间的流逝，熔融流动性的降低程度小，可以适用于常规的熔融成型。 {circle around（2）}它具有很高的耐热性。 {circle around（3）}它的生产力优越。 {circle around（4）}尺寸精度优越。

公开(公告)号：US06531568B1

公开(公告)日：2003-03-11

申请号：US09762260

申请日：2001-04-09

申请人： Atsushi Shibuya ,  Tomomi Okumura ,  Hideaki Oikawa ,  Yoshihiro Sakata ,  Takashi Kuroki ,  Yuichi Okawa ,  Shoji Tamai

发明人： Atsushi Shibuya ,  Tomomi Okumura ,  Hideaki Oikawa ,  Yoshihiro Sakata ,  Takashi Kuroki ,  Yuichi Okawa ,  Shoji Tamai

IPC分类号： C08G7310

CPC分类号： C08G73/10 ,  C08G73/101

摘要： This invention provides crosslinkable-group-containing polyimides of various known thermoplastic polyimide backbone structures, which are provided with far better heat resistance, chemical resistance and mechanical properties than known polyimides of the structures without impairing excellent moldability or formability, superb sliding property, low water absorption property, outstanding electrical properties, high thermal oxidation stability and high radiation resistance, all of which are inherent to the structures.

摘要翻译： 本发明提供了各种已知的热塑性聚酰亚胺骨架结构的含交联性基团的聚酰亚胺，其具有比已知结构的聚酰亚胺更好的耐热性，耐化学性和机械性能，而不损害优异的成型性或成型性，优异的滑动性，低水 吸收性能，优异的电性能，高热氧化稳定性和高耐辐射性，所有这些都是结构固有的。

公开(公告)号：US08742556B2

公开(公告)日：2014-06-03

申请号：US13349993

申请日：2012-01-13

申请人： Takuya Kadoguchi ,  Tomomi Okumura ,  Tatsuya Miyoshi

发明人： Takuya Kadoguchi ,  Tomomi Okumura ,  Tatsuya Miyoshi

IPC分类号： H01L23/495

CPC分类号： H01L23/4334 ,  H01L23/3142 ,  H01L23/473 ,  H01L23/492 ,  H01L24/06 ,  H01L24/29 ,  H01L24/32 ,  H01L24/36 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L25/072 ,  H01L2224/06181 ,  H01L2224/27013 ,  H01L2224/291 ,  H01L2224/32245 ,  H01L2224/40095 ,  H01L2224/40225 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73221 ,  H01L2224/73265 ,  H01L2224/83385 ,  H01L2224/83801 ,  H01L2224/8381 ,  H01L2224/84801 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01068 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01088 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/351 ,  H01L2924/3656 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/37099

摘要： A semiconductor module comprises: a metal block; a semiconductor device installed via a solder layer in a semiconductor device installation area on a surface of the metal block; and a molded portion formed by molding a resin on the metal block and the semiconductor device; wherein the surface of the metal block includes a plating area and a roughened area, and the semiconductor device installation area is provided in the plating area.

摘要翻译： 半导体模块包括：金属块; 半导体器件，其通过焊料层安装在所述金属块的表面上的半导体器件安装区域中; 以及通过在所述金属块和所述半导体器件上模制树脂而形成的模制部分; 其中金属块的表面包括电镀区域和粗糙区域，并且半导体器件安装区域设置在电镀区域中。

公开(公告)号：US20090236725A1

公开(公告)日：2009-09-24

申请号：US12226764

申请日：2007-04-26

申请人： Naohiko Hirano ,  Yoshitsugu Sakamoto ,  Tomomi Okumura ,  Kaichi Tsuruta ,  Minoru Ueshima ,  Takashi Ishii

发明人： Naohiko Hirano ,  Yoshitsugu Sakamoto ,  Tomomi Okumura ,  Kaichi Tsuruta ,  Minoru Ueshima ,  Takashi Ishii

IPC分类号： H01L23/488 ,  B23K35/24

CPC分类号： H05K3/3478 ,  B23K35/262 ,  B23K35/40 ,  H01L23/492 ,  H01L23/49866 ,  H01L24/29 ,  H01L24/83 ,  H01L2224/291 ,  H01L2224/29101 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/29211 ,  H01L2224/29355 ,  H01L2224/29499 ,  H01L2224/29582 ,  H01L2224/29611 ,  H01L2224/29694 ,  H01L2224/29695 ,  H01L2224/32225 ,  H01L2224/83101 ,  H01L2224/83455 ,  H01L2224/83801 ,  H01L2924/00013 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01327 ,  H01L2924/0133 ,  H01L2924/0134 ,  H01L2924/014 ,  H01L2924/15747 ,  H05K2201/0215 ,  H05K2201/2036 ,  H05K2203/0415 ,  H01L2924/00 ,  H01L2924/01028 ,  H01L2924/01026 ,  H01L2924/01049 ,  H01L2924/01083 ,  H01L2924/3512 ,  H01L2924/00014 ,  H01L2224/13111 ,  H01L2224/13109 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299 ,  H01L2224/2929

摘要： An electronic component having a semiconductor element bonded to a substrate with solder has a decreased bonding strength if there is not a suitable clearance between the semiconductor element and the substrate. Therefore, a solder preform having high melting point metal particles dispersed in solder has been used in the manufacture of electronic components. However, when an electronic component was manufactured using a conventional solder preform, there were cases in which the semiconductor element leaned or the bonding strength was not adequate.A solder preform according to the present invention has a variation in the size of high melting point metal particles which is at most 20 micrometers when the metal particle diameter is 50 micrometers, and an alloy layer of the high melting point metal particles and the main component of solder is formed around the high melting point metal particles. In addition, no voids at all are present in the solder. An electronic component according to the present invention has a semiconductor element bonded to a substrate with the above-described solder preform and has excellent resistance to heat cycles.

摘要翻译： 如果半导体元件和基板之间没有合适的间隙，则具有用焊料与基板结合的半导体元件的电子部件的接合强度降低。 因此，在电子部件的制造中已经使用了分散在焊料中的高熔点金属粒子的焊料预成型体。 然而，当使用常规的焊料预制件制造电子部件时，存在半导体元件倾斜或接合强度不足的情况。 根据本发明的焊料预成型体在金属粒径为50微米时具有至多20微米的高熔点金属颗粒的尺寸变化，并且高熔点金属颗粒和主要组分的合金层 的焊料形成在高熔点金属颗粒周围。 另外，在焊料中也不存在空隙。 根据本发明的电子部件具有利用上述焊料预成型件与基板结合的半导体元件，并具有优异的耐热循环性。

公开(公告)号：US20070057373A1

公开(公告)日：2007-03-15

申请号：US11516501

申请日：2006-09-07

申请人： Tomomi Okumura ,  Yoshitsugu Sakamoto ,  Naohiko Hirano ,  Kuniaki Mamitsu

发明人： Tomomi Okumura ,  Yoshitsugu Sakamoto ,  Naohiko Hirano ,  Kuniaki Mamitsu

IPC分类号： H01L23/52

CPC分类号： H01L23/051 ,  H01L23/492 ,  H01L23/49503 ,  H01L23/49513 ,  H01L23/49541 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/32 ,  H01L24/33 ,  H01L24/48 ,  H01L24/49 ,  H01L24/83 ,  H01L2224/26175 ,  H01L2224/27013 ,  H01L2224/291 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/32014 ,  H01L2224/32057 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2224/83051 ,  H01L2224/83385 ,  H01L2224/83455 ,  H01L2224/83801 ,  H01L2224/92147 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/0132 ,  H01L2224/83 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device includes: first and second metallic plates, each of which includes a heat radiation surface and an inner surface; a semiconductor element between the metallic plates; a block between the second metallic plate and the semiconductor element; a solder member between the second metallic plate and the block; and a resin mold. The heat radiation surface is exposed from the resin mold. The second metallic plate includes a groove for preventing the solder member from expanding outside of the block. The groove is disposed on the inner surface and disposed on an outer periphery of the block. The second metallic plate further includes an inner surface member on an inner surface of the groove. The inner surface member has a solder wettability, which is larger than a solder wettability of the block.

摘要翻译： 一种半导体器件包括：第一和第二金属板，每个金属板包括散热表面和内表面; 金属板之间的半导体元件; 第二金属板和半导体元件之间的块; 在所述第二金属板和所述块之间的焊料构件; 和树脂模具。 散热面从树脂模具露出。 所述第二金属板包括用于防止所述焊料部件在所述块体的外部扩展的槽。 槽设置在内表面上并且设置在块的外周。 第二金属板还包括在槽的内表面上的内表面构件。 内表面构件具有大于块的焊料润湿性的焊料润湿性。

公开(公告)号：US09331001B2

公开(公告)日：2016-05-03

申请号：US13819209

申请日：2010-09-02

申请人： Takuya Kadoguchi ,  Yoshikazu Suzuki ,  Masaya Kaji ,  Kiyofumi Nakajima ,  Tatsuya Miyoshi ,  Takanori Kawashima ,  Tomomi Okumura

发明人： Takuya Kadoguchi ,  Yoshikazu Suzuki ,  Masaya Kaji ,  Kiyofumi Nakajima ,  Tatsuya Miyoshi ,  Takanori Kawashima ,  Tomomi Okumura

IPC分类号： H01L23/40 ,  H01L23/31 ,  H01L23/373 ,  H01L23/433 ,  H01L23/473 ,  H01L23/495 ,  H01L25/07 ,  H01L23/00

CPC分类号： H01L23/40 ,  G01N29/07 ,  G01N2291/044 ,  G01N2291/2697 ,  H01L23/3121 ,  H01L23/3735 ,  H01L23/4006 ,  H01L23/4334 ,  H01L23/473 ,  H01L23/49548 ,  H01L24/36 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L25/072 ,  H01L2224/32245 ,  H01L2224/371 ,  H01L2224/40095 ,  H01L2224/40225 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73221 ,  H01L2224/83801 ,  H01L2224/84801 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/014 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012

摘要： A semiconductor module includes a semiconductor device; a metal plate portion that includes a first surface on a side of the semiconductor device and has a fastening portion at an end thereof; a molded portion that is formed by molding a resin on the semiconductor device and the metal plate portion, a cooling plate portion that is a separate member from the metal plate portion, is provided on a side opposite to the first surface on the side of the semiconductor device, and includes fins on a side opposite to the side of the metal plate portion; wherein the fastening portion of the metal plate portion is exposed out of the molded portion, and the cooling plate portion includes a fastening portion at a position that corresponds to a position of the fastening portion of the metal plate portion.

摘要翻译： 半导体模块包括半导体器件; 金属板部，其包括在半导体器件的一侧上的第一表面，并且在其端部具有紧固部分; 通过在半导体器件和金属板部分上模制树脂而形成的模制部分，作为与金属板部分分离的部件的冷却板部分设置在与金属板部分的侧面上的第一表面相对的一侧上 半导体器件，并且在与金属板部分的侧面相对的一侧包括翅片; 其特征在于，所述金属板部的所述固定部从所述模制部露出，所述冷却板部在与所述金属板部的所述固定部的位置对应的位置包括紧固部。

公开(公告)号：US09236330B2

公开(公告)日：2016-01-12

申请号：US13988602

申请日：2010-11-29

申请人： Takuya Kadoguchi ,  Takanori Kawashima ,  Tomomi Okumura

发明人： Takuya Kadoguchi ,  Takanori Kawashima ,  Tomomi Okumura

IPC分类号： H01L23/48 ,  H01L21/00 ,  H01L23/495 ,  H01L23/00 ,  H02M7/537 ,  H01L23/433 ,  H01L25/07 ,  H02M7/00

CPC分类号： H01L23/495 ,  H01L23/4334 ,  H01L23/49524 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/32 ,  H01L24/33 ,  H01L24/34 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L25/072 ,  H01L2224/32245 ,  H01L2224/37011 ,  H01L2224/4007 ,  H01L2224/40095 ,  H01L2224/40137 ,  H01L2224/40139 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2224/83385 ,  H01L2224/83801 ,  H01L2224/84801 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/01082 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H02M7/003 ,  H02M7/537 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00012 ,  H01L2224/37099

摘要： A power module according to the present invention includes a semiconductor device; a base part formed from an electrically conductive material on which the semiconductor device is mounted; a signal lead part formed from the same material as the base part, the signal lead part being electrically connected to the semiconductor device; and a thin plate lead part formed from the same material as the base part such that it is formed seamlessly from the base part and it is thinner than the base part, the thin plate lead part extending on the same side as the signal lead part with respect to the base part, wherein the thin plate lead part is electrically connected to a predetermined terminal of the semiconductor device via the base part such that it forms a potential detecting terminal for detecting a potential of the predetermined terminal of the semiconductor device.

摘要翻译： 根据本发明的功率模块包括半导体器件; 由其上安装有半导体器件的导电材料形成的基部; 由与所述基底部分相同的材料形成的信号引线部分，所述信号引线部分电连接到所述半导体器件; 以及由与基部相同的材料形成的薄板引线部，使得从基部无缝地形成并且比基部更薄，薄板引线部在与信号引线部相同的一侧延伸， 其特征在于，所述薄板引线部经由所述基底部与所述半导体器件的预定端子电连接，使得形成用于检测所述半导体器件的所述预定端子的电位的电位检测端子。

公开(公告)号：US08994167B2

公开(公告)日：2015-03-31

申请号：US14368628

申请日：2012-12-21

申请人： Takuya Kadoguchi ,  Shingo Iwasaki ,  Tomohiro Miyazaki ,  Masayoshi Nishihata ,  Tomomi Okumura

发明人： Takuya Kadoguchi ,  Shingo Iwasaki ,  Tomohiro Miyazaki ,  Masayoshi Nishihata ,  Tomomi Okumura

IPC分类号： H01L29/72 ,  H01L23/367 ,  H01L23/31

CPC分类号： H01L23/3672 ,  H01L23/3142 ,  H01L23/4334 ,  H01L24/33 ,  H01L2224/32245 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012

摘要： A semiconductor device includes a plurality of semiconductor elements each having a front surface and a back surface; a front surface-side heatsink that is positioned on a front-surface side of the semiconductor elements and dissipates heat generated by the semiconductor elements; a back surface-side heatsink that is positioned on a back surface-side of the semiconductor elements and dissipates heat generated by the semiconductor elements; a sealing material that covers the semiconductor device except for a front surface of the front surface-side heatsink and a back surface of the back surface-side heatsink; a primer that is coated on at least one of the front surface-side heatsink and the back surface-side heatsink and improves contact with the sealing member; and a protruding portion positioned between the plurality of semiconductor elements, on at least one of the back surface of the front surface-side heatsink and the front surface of the back surface-side heatsink.

摘要翻译： 半导体器件包括多个半导体元件，每个半导体元件具有前表面和后表面; 位于所述半导体元件的前表面侧并散发由所述半导体元件产生的热的前表面侧散热器; 背面侧散热器，位于半导体元件的背面侧，散发由半导体元件产生的热量; 覆盖前表面侧散热片前表面的半导体器件和后表面侧散热片后表面的密封材料; 涂覆在前表面侧散热片和背面侧散热片中的至少一个上的底漆，改善与密封部件的接触; 以及位于所述多个半导体元件之间的突出部分，位于所述前表面侧散热器的后表面和所述背面侧散热片的前表面中的至少一个上。

公开(公告)号：US20140145193A1

公开(公告)日：2014-05-29

申请号：US14129342

申请日：2012-04-26

申请人： Takuya Kadoguchi ,  Tatsuya Miyoshi ,  Takanori Kawashima ,  Tomomi Okumura

发明人： Takuya Kadoguchi ,  Tatsuya Miyoshi ,  Takanori Kawashima ,  Tomomi Okumura

IPC分类号： H01L21/66 ,  H01L23/495

CPC分类号： H01L23/49562 ,  H01L22/34 ,  H01L23/3114 ,  H01L23/4334 ,  H01L23/492 ,  H01L23/495 ,  H01L23/4951 ,  H01L23/4952 ,  H01L23/49537 ,  H01L23/49541 ,  H01L23/49551 ,  H01L23/49555 ,  H01L23/49568 ,  H01L23/49575 ,  H01L24/37 ,  H01L24/40 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/85 ,  H01L25/072 ,  H01L25/16 ,  H01L25/18 ,  H01L2224/371 ,  H01L2224/37147 ,  H01L2224/40095 ,  H01L2224/40137 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/49171 ,  H01L2224/73221 ,  H01L2224/73263 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/84801 ,  H01L2224/859 ,  H01L2924/00014 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099

摘要： A problem to be solved is to provide a lead frame and a power module having high material yield.A lead frame includes a plurality of first leads extending to one side of an area in which a semiconductor device is disposed in a planar view; a plurality of second leads extending to another side that is opposite the one side of the area in which the semiconductor device is disposed in a planar view; a third lead arranged outside of one of the plurality of first leads positioned at an edge of the plurality of first leads in a planar view; and a wiring part that is connected to the third lead, acts as a part of a guide frame of the plurality of first leads, the plurality of second leads, and the third lead, and acts as a wiring connected to the third lead after parts of the guide frame other than the part of the guide frame have been cut off.

摘要翻译： 要解决的问题是提供具有高材料产量的引线框架和功率模块。 引线框架包括延伸到其中半导体器件在平面图中设置的区域的一侧的多个第一引线; 多个第二引线延伸到在平面图中与半导体器件设置的区域的一侧相对的另一侧; 第三引线，布置在平面图中位于所述多个第一引线的边缘的所述多个第一引线中的一个之外; 以及连接到第三引线的布线部分，用作多个第一引线，多个第二引线和第三引线的引导框架的一部分，并且用作连接到第三引线的布线部件 引导框架除了引导框架的一部分已被切断。

公开(公告)号：US20130235636A1

公开(公告)日：2013-09-12

申请号：US13988602

申请日：2010-11-29

申请人： Takuya Kadoguchi ,  Takanori Kawashima ,  Tomomi Okumura

发明人： Takuya Kadoguchi ,  Takanori Kawashima ,  Tomomi Okumura

IPC分类号： H01L23/495 ,  H02M7/537

CPC分类号： H01L23/495 ,  H01L23/4334 ,  H01L23/49524 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/32 ,  H01L24/33 ,  H01L24/34 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L25/072 ,  H01L2224/32245 ,  H01L2224/37011 ,  H01L2224/4007 ,  H01L2224/40095 ,  H01L2224/40137 ,  H01L2224/40139 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2224/83385 ,  H01L2224/83801 ,  H01L2224/84801 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/01082 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H02M7/003 ,  H02M7/537 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00012 ,  H01L2224/37099

摘要： A power module according to the present invention includes a semiconductor device; a base part formed from an electrically conductive material on which the semiconductor device is mounted; a signal lead part formed from the same material as the base part, the signal lead part being electrically connected to the semiconductor device; and a thin plate lead part formed from the same material as the base part such that it is formed seamlessly from the base part and it is thinner than the base part, the thin plate lead part extending on the same side as the signal lead part with respect to the base part, wherein the thin plate lead part is electrically connected to a predetermined terminal of the semiconductor device via the base part such that it forms a potential detecting terminal for detecting a potential of the predetermined terminal of the semiconductor device.

摘要翻译： 根据本发明的功率模块包括半导体器件; 由其上安装有半导体器件的导电材料形成的基部; 由与所述基底部分相同的材料形成的信号引线部分，所述信号引线部分电连接到所述半导体器件; 以及由与基部相同的材料形成的薄板引线部，使得从基部无缝地形成并且比基部更薄，薄板引线部在与信号引线部相同的一侧延伸， 其特征在于，所述薄板引线部经由所述基底部与所述半导体器件的预定端子电连接，使得形成用于检测所述半导体器件的所述预定端子的电位的电位检测端子。