公开(公告)号：US07205256B2

公开(公告)日：2007-04-17

申请号：US10399576

申请日：2001-09-03

申请人： Takeshi Kijima ,  Hiroshi Ishiwara

发明人： Takeshi Kijima ,  Hiroshi Ishiwara

IPC分类号： B01J21/06 ,  B01J32/00 ,  B32B18/00 ,  H01L29/00

CPC分类号： B82Y30/00 ,  C01B13/14 ,  C01B13/32 ,  C01B33/20 ,  C01G23/003 ,  C01G25/006 ,  C01G29/00 ,  C01G29/006 ,  C01G35/006 ,  C01P2002/02 ,  C01P2002/34 ,  C01P2002/50 ,  C01P2002/72 ,  C01P2002/77 ,  C01P2002/85 ,  C01P2004/64 ,  C01P2004/80 ,  C01P2006/40 ,  H01L21/02142 ,  H01L21/02161 ,  H01L21/02197 ,  H01L21/02282 ,  H01L21/02356 ,  H01L21/31691 ,  Y10S502/514 ,  Y10S502/525

摘要： An oxide material characterized by that it has a perovskite structure comprising an oxide represented by ABO3, (Bi2O2)2+ (Am−1BmO3m+1)2− wherein A represents one kind or two or more kinds of ions selected from the group consisting of Li+, Na+, K+, Pb2+, Ca2+, Sr2+, Ba2+, Bi3+, Y3+, Mn3+ and La3+, B represents one kind or two or more kinds of ions selected from the group consisting of Ru3+, Fe3+, Ti4+, Zr4+, Cu4+, Nb5+, Ta5+, V5+, W6+ and Mo6+, and m represents a natural number of 1 or more, LnBa2Cu3O7, Z2Ba2Can−1CunO2n+4 or ZBa2Can−1CunO2n+3, wherein Ln represents one kind or two or more kinds of ions selected from the group consisting of Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu, Z represents one kind or two or more kinds of ions selected from the group consisting of Bi, Tl and Hg, and n represents a natural number of from 1 to 5; and a catalytic substance containing one or more kinds of elements selected from the group consisting of Si, Ge and Sn.

公开(公告)号：US20140319405A1

公开(公告)日：2014-10-30

申请号：US14350864

申请日：2011-10-14

申请人： Takeshi Kijima ,  Yuuji Honda ,  Tomoyuki Araki

发明人： Takeshi Kijima ,  Yuuji Honda ,  Tomoyuki Araki

IPC分类号： H01L41/187 ,  H01L41/257

CPC分类号： H01L41/1876 ,  G02F1/3558 ,  H01L41/0805 ,  H01L41/257 ,  H01L41/314 ,  Y10T29/42

摘要： To perform poling treatment in a simple procedure by dry process. An aspect of the invention is a magnetic field poling device including: a first holding part configured to hold a film-to-be-poled 2; a second holding part configured to hold a magnet generating a magnetic field B to the film-to-be-poled 2; and a moving mechanism configured to move the first holding part or the second holding part in a direction perpendicular to the direction of the magnetic field B.

摘要翻译： 通过干法在简单的程序中进行极化处理。 本发明的一个方面是一种磁场极化装置，包括：第一保持部分，被配置成保持被膜极2; 第二保持部构造成将产生磁场B的磁体保持在被膜极2上; 以及移动机构，被配置为沿着与磁场B的方向垂直的方向移动第一保持部或第二保持部。

公开(公告)号：US20140242379A1

公开(公告)日：2014-08-28

申请号：US14235626

申请日：2011-07-29

申请人： Takeshi Kijima ,  Yuuji Honda

发明人： Takeshi Kijima ,  Yuuji Honda

IPC分类号： B05D5/00

CPC分类号： H01L41/0815 ,  B05D1/005 ,  B05D3/0254 ,  B05D5/00 ,  B05D7/54 ,  H01L41/187 ,  H01L41/1873 ,  H01L41/1878 ,  H01L41/318 ,  Y10T428/26

摘要： To produce a ferroelectric film formed of a lead-free material. The ferroelectric film according to an aspect of the present invention includes a (K1-XNaX)NbO3 film or a BiFeO3 film having a perovskite structure and a crystalline oxide preferentially oriented to (001) formed on at least one of the upper side and lower side of the (K1-XNaX)NbO3 film or BiFeO3 film, and X satisfies the formula below 0.3≦X≦0.7.

摘要翻译： 制造由无铅材料形成的铁电体膜。 根据本发明的一个方面的铁电体膜包括（K1-XNaX）NbO3膜或具有钙钛矿结构的BiFeO 3膜和优先取向成（001）的结晶氧化物，其形成在上侧和下侧的至少一个上 的（K1-XNaX）NbO3膜或BiFeO3膜，X满足下式0.3≤nlE; X＆lt; l1; 0.7。

公开(公告)号：US20130059076A1

公开(公告)日：2013-03-07

申请号：US13643873

申请日：2010-04-28

申请人： Mitsuhiro Suzuki ,  Takeshi Kijima ,  Yuuji Honda

发明人： Mitsuhiro Suzuki ,  Takeshi Kijima ,  Yuuji Honda

IPC分类号： B05C11/08 ,  B05D3/12

CPC分类号： H01L21/67017 ,  B05C11/023 ,  B05C11/08 ,  B05D1/005 ,  B05D3/0486 ,  H01L21/02197 ,  H01L21/02282 ,  H01L21/6715 ,  H01L21/67196 ,  H01L21/67207

摘要： To provide a substrate treatment apparatus capable of suppressing adherence of dust to a film coated on a substrate. As an aspect of the present invention is a substrate treatment apparatus provided with a spin-coating treatment chamber 4a for coating a film on the substrate by spin-coating, a first air-conditioning mechanism that regulates an amount of dust in the air in the spin-coating treatment chamber, an annealing treatment chamber 7a for performing lamp annealing treatment on the film coated on the substrate, a conveying chamber 2a that is connected to each of the spin-coating treatment chamber and the annealing treatment chamber and is for conveying the substrate between the spin-coating treatment chamber and the annealing treatment chamber each other, and a second air-conditioning mechanism that regulate an amount of dust in the air in the conveying chamber.

摘要翻译： 提供能够抑制灰尘对涂布在基材上的膜的粘附性的基板处理装置。 作为本发明的一个方面，提供一种基板处理装置，该基板处理装置具有旋转涂布处理室4a，用于通过旋转涂布在基板上涂覆膜;第一空调机构，其调节空气中的灰尘量 旋涂处理室，对涂布在基板上的膜进行灯退火处理的退火处理室7a，与旋涂处理室和退火处理室连接的输送室2a， 旋转涂布处理室和退火处理室之间的基板，以及调节输送室中的空气中的灰尘量的第二空调机构。

公开(公告)号：US07960901B2

公开(公告)日：2011-06-14

申请号：US12662619

申请日：2010-04-26

申请人： Eiji Natori ,  Takeshi Kijima ,  Koichi Furuyama ,  Yuzo Tasaki

发明人： Eiji Natori ,  Takeshi Kijima ,  Koichi Furuyama ,  Yuzo Tasaki

IPC分类号： H01L41/187

CPC分类号： C04B35/457 ,  C04B35/01 ,  C04B35/16 ,  C04B35/42 ,  C04B35/4521 ,  C04B35/465 ,  C04B35/472 ,  C04B35/475 ,  C04B35/491 ,  C04B35/493 ,  C04B35/495 ,  C04B35/497 ,  C04B35/624 ,  C04B35/6264 ,  C04B35/62645 ,  C04B35/64 ,  C04B2235/3205 ,  C04B2235/3208 ,  C04B2235/3213 ,  C04B2235/3215 ,  C04B2235/3224 ,  C04B2235/3227 ,  C04B2235/3232 ,  C04B2235/3244 ,  C04B2235/3251 ,  C04B2235/3256 ,  C04B2235/3258 ,  C04B2235/3287 ,  C04B2235/3296 ,  C04B2235/3298 ,  C04B2235/3418 ,  C04B2235/3427 ,  C04B2235/3436 ,  C04B2235/3445 ,  C04B2235/3454 ,  C04B2235/3463 ,  C04B2235/664 ,  C04B2235/76 ,  C04B2235/80 ,  C23C14/08 ,  C23C16/40 ,  C23C16/409 ,  C23C18/1208 ,  C23C18/1225 ,  H01L21/02197 ,  H01L21/02282 ,  H01L21/31691 ,  H01L27/11502 ,  H01L27/11507 ,  H01L41/1878 ,  H01L41/318

摘要： A method of manufacturing a ceramic includes forming a film which includes a complex oxide material having an oxygen octahedral structure and a paraelectric material having a catalytic effect for the complex oxide material in a mixed state, and performing a heat treatment to the film, wherein the paraelectric material is one of a layered catalytic substance which includes Si in the constituent elements and a layered catalytic substance which includes Si and Ge in the constituent elements. The heat treatment includes sintering and post-annealing. At least the post-annealing is performed in a pressurized atmosphere including at least one of oxygen and ozone. A ceramic is a complex oxide having an oxygen octahedral structure, and has Si and Ge in the oxygen octahedral structure.

摘要翻译： 一种制造陶瓷的方法包括：形成包含具有氧八面体结构的复合氧化物材料和对复合氧化物材料具有催化作用的顺电性材料的混合状态的膜，并对膜进行热处理，其中， 顺电材料是构成元素中包含Si的层状催化物质和构成元素中包含Si和Ge的层状催化物质之一。 热处理包括烧结和后退火。 至少在包括氧和臭氧中的至少一种的加压气氛中进行后退火。 陶瓷是具有氧八面体结构的复合氧化物，并且具有氧八面体结构中的Si和Ge。

公开(公告)号：US20100207492A1

公开(公告)日：2010-08-19

申请号：US12662617

申请日：2010-04-26

申请人： Eiji Natori ,  Takeshi Kijima ,  Koichi Furuyama ,  Yuzo Tasaki

发明人： Eiji Natori ,  Takeshi Kijima ,  Koichi Furuyama ,  Yuzo Tasaki

IPC分类号： H01L41/187

CPC分类号： C04B35/457 ,  C04B35/01 ,  C04B35/16 ,  C04B35/42 ,  C04B35/4521 ,  C04B35/465 ,  C04B35/472 ,  C04B35/475 ,  C04B35/491 ,  C04B35/493 ,  C04B35/495 ,  C04B35/497 ,  C04B35/624 ,  C04B35/6264 ,  C04B35/62645 ,  C04B35/64 ,  C04B2235/3205 ,  C04B2235/3208 ,  C04B2235/3213 ,  C04B2235/3215 ,  C04B2235/3224 ,  C04B2235/3227 ,  C04B2235/3232 ,  C04B2235/3244 ,  C04B2235/3251 ,  C04B2235/3256 ,  C04B2235/3258 ,  C04B2235/3287 ,  C04B2235/3296 ,  C04B2235/3298 ,  C04B2235/3418 ,  C04B2235/3427 ,  C04B2235/3436 ,  C04B2235/3445 ,  C04B2235/3454 ,  C04B2235/3463 ,  C04B2235/664 ,  C04B2235/76 ,  C04B2235/80 ,  C23C14/08 ,  C23C16/40 ,  C23C16/409 ,  C23C18/1208 ,  C23C18/1225 ,  H01L21/02197 ,  H01L21/02282 ,  H01L21/31691 ,  H01L27/11502 ,  H01L27/11507 ,  H01L41/1878 ,  H01L41/318

摘要： A method of manufacturing a ceramic includes forming a film which includes a complex oxide material having an oxygen octahedral structure and a paraelectric material having a catalytic effect for the complex oxide material in a mixed state, and performing a heat treatment to the film, wherein the paraelectric material is one of a layered catalytic substance which includes Si in the constituent elements and a layered catalytic substance which includes Si and Ge in the constituent elements. The heat treatment includes sintering and post-annealing. At least the post-annealing is performed in a pressurized atmosphere including at least one of oxygen and ozone. A ceramic is a complex oxide having an oxygen octahedral structure, and has Si and Ge in the oxygen octahedral structure.

摘要翻译： 一种制造陶瓷的方法包括：形成包含具有氧八面体结构的复合氧化物材料和对复合氧化物材料具有催化作用的顺电性材料的混合状态的膜，并对膜进行热处理，其中， 顺电材料是构成元素中包含Si的层状催化物质和构成元素中包含Si和Ge的层状催化物质之一。 热处理包括烧结和后退火。 至少在包括氧和臭氧中的至少一种的加压气氛中进行后退火。 陶瓷是具有氧八面体结构的复合氧化物，并且具有氧八面体结构中的Si和Ge。

公开(公告)号：US07731933B2

公开(公告)日：2010-06-08

申请号：US11511663

申请日：2006-08-29

申请人： Takeshi Kijima ,  Takamitsu Higuchi

发明人： Takeshi Kijima ,  Takamitsu Higuchi

IPC分类号： C01G25/02 ,  C23C14/00

CPC分类号： C23C14/3414 ,  C04B35/493 ,  C04B35/497 ,  C04B35/6264 ,  C04B35/6325 ,  C04B35/6346 ,  C04B2235/3234 ,  C04B2235/3239 ,  C04B2235/3248 ,  C04B2235/3251 ,  C04B2235/3255 ,  C04B2235/3258 ,  C04B2235/3287 ,  C04B2235/3418 ,  C04B2235/3427 ,  C04B2235/441 ,  C04B2235/449 ,  C04B2235/768 ,  C23C14/088 ,  H01L21/31691 ,  H01L41/0805 ,  H01L41/1876 ,  H01L41/316

摘要： An insulating target material for obtaining an insulating complex oxide film represented by a general formula AB1-XCXO3, an element A including at least Pb, an element B including at least one of Zr, Ti, V, W, and Hf, and an element C including at least one of Nb and Ta.

摘要翻译： 一种用于获得由通式AB1-XCXO3表示的绝缘复合氧化物膜，至少包含Pb的元素A，包括Zr，Ti，V，W和Hf中的至少一种的元素B的绝缘靶材料，以及元素 包括Nb和Ta中的至少一种。

公开(公告)号：US07718487B2

公开(公告)日：2010-05-18

申请号：US11413145

申请日：2006-04-27

申请人： Takeshi Kijima

发明人： Takeshi Kijima

IPC分类号： H01L21/8242 ,  H01L21/00

CPC分类号： H01L41/318 ,  H01L21/31691 ,  H01L28/56 ,  H01L41/1876 ,  H01L41/316

摘要： A method of manufacturing a ferroelectric layer, including: forming a first ferroelectric layer above a base by a vapor phase method; and forming a second ferroelectric layer above the first ferroelectric layer by a liquid phase method.

摘要翻译： 一种铁电体层的制造方法，其特征在于，包括：通过气相法在基材的上方形成第一强电介质层; 以及通过液相法在所述第一铁电体层的上方形成第二铁电体层。

公开(公告)号：US07569400B2

公开(公告)日：2009-08-04

申请号：US11316168

申请日：2005-12-22

申请人： Takeshi Kijima ,  Yasuaki Hamada ,  Tomokazu Kobayashi ,  Hiromu Miyazawa

发明人： Takeshi Kijima ,  Yasuaki Hamada ,  Tomokazu Kobayashi ,  Hiromu Miyazawa

IPC分类号： H01L21/00

CPC分类号： H01G7/06 ,  C04B35/493 ,  C04B35/495 ,  C04B35/499 ,  C04B35/624 ,  C04B35/6264 ,  C04B35/6303 ,  C04B2235/3232 ,  C04B2235/3244 ,  C04B2235/3251 ,  C04B2235/3255 ,  C04B2235/3287 ,  C04B2235/3296 ,  C04B2235/3298 ,  C04B2235/3418 ,  C04B2235/441 ,  C04B2235/449 ,  C04B2235/765 ,  C04B2235/768 ,  C04B2235/787 ,  C23C18/00 ,  H01G4/1218 ,  H01G4/1236 ,  H01G4/1263 ,  H01L21/02197 ,  H01L21/02282 ,  H01L21/31691 ,  H01L27/11502 ,  H01L27/11507

摘要： A ferroelectric film having a ferroelectric shown by a general formula (Pb1-dBid)(B1-aXa)O3, B including at least one of Zr and Ti, X including at least one of Nb and Ta, “a” being in a range of “0.05≦a≦0.4”, and “d” being in a range of “0

摘要翻译： 具有由通式（Pb1-dBid）（B1-aXa）O3表示的铁电体的铁电体膜，包含Zr和Ti中的至少一种的B，包含Nb和Ta中的至少一种的X，“a”在一定范围内 的“0.05 <= a <= 0.4”，“d”在“0

公开(公告)号：US20090184290A1

公开(公告)日：2009-07-23

申请号：US12318121

申请日：2008-12-22

申请人： Takeshi Kijima ,  Yasuaki Hamada ,  Mayumi Ueno

发明人： Takeshi Kijima ,  Yasuaki Hamada ,  Mayumi Ueno

IPC分类号： C09K3/00

CPC分类号： H01L21/02205 ,  B41J2/14233 ,  B41J2202/03 ,  C01G25/00 ,  C01G33/006 ,  C01P2002/34 ,  C01P2002/72 ,  C01P2002/82 ,  C01P2006/40 ,  C01P2006/42 ,  C04B35/493 ,  C04B35/624 ,  C04B35/6264 ,  C04B2235/3251 ,  C04B2235/3287 ,  C04B2235/3427 ,  C04B2235/441 ,  C04B2235/449 ,  C04B2235/761 ,  C23C18/1216 ,  C23C18/1241 ,  C23C18/1254 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/02194 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/02356 ,  H01L21/31691 ,  H01L27/11502 ,  H01L41/1876 ,  H01L41/318

摘要： To provide precursor compositions for forming ferroelectric, methods for manufacturing precursor compositions, and methods for forming ferroelectric films using precursor compositions, which have excellent composition controllability in a liquid phase method, and in which metal compositions such as lead can be reused. A precursor composition pertains to a precursor composition including a precursor for forming a ferroelectric, wherein the ferroelectric is expressed by a general formula of AB1-xCxO3, where an element A is composed of at least Pb, an element B is composed of at least one of Zr, Ti, V, W and Hf, an element C is composed of at least one of Nb and Ta, and the precursor includes at least the element B and the element C, and has an ester-bond in a part thereof.