摘要:
A method for forming an electrical structure. A dielectric substrate having a metal signal line therein is provided. A first metal voltage plane is laminated to a first surface of the dielectric substrate. An opening in the first metal voltage plane is formed such that a first electrically conductive strip across the opening includes an image of a first portion of the metal signal line, wherein the image of the first portion of the metal signal line projects across the opening in the first metal voltage plane. A signal current is flowed through the metal signal line, wherein the signal current is an alternating current. A return current is flowed through the first electrically conductive strip, wherein the return current includes a portion of the signal current.
摘要:
A method, structure, and method of design relating an electrical structure that includes a metal voltage plane laminated to a dielectric substrate. A determination is made as to where to place an opening for venting gases generated during fabrication of the dielectric laminate. An identification is made of a problematic opening in the metal voltage plane that is above or below a corresponding metal signal line within the dielectric laminate, such that an image of a portion of the corresponding metal signal line projects across the problematic opening. An electrically conductive strip is positioned across the problematic opening, such that the strip includes the image. In fabrication, the dielectric substrate having the metal signal line therein is provided. The metal voltage plane is laminated to the dielectric substrate. The opening in the metal voltage plane is formed such that the strip is across the opening and includes the image.
摘要:
A method, structure, and method of design relating an electrical structure that includes a metal voltage plane laminated to a dielectric substrate. A determination is made as to where to place an opening for venting gases generated during fabrication of the dielectric laminate. An identification is made of a problematic opening in the metal voltage plane that is above or below a corresponding metal signal line within the dielectric laminate, such that an image of a portion of the corresponding metal signal line projects across the problematic opening. An electrically conductive strip is positioned across the problematic opening, such that the strip includes the image. In fabrication, the dielectric substrate having the metal signal line therein is provided. The metal voltage plane is laminated to the dielectric substrate. The opening in the metal voltage plane is formed such that the strip is across the opening and includes the image.
摘要:
An organic integrated circuit chip carrier for high density integrated circuit chip attach, wherein the contact pads or microvias which provide electrical interconnections to external circuitry are located in a first array pattern, while the plated through holes or through-vias are located in a second array pattern. This allows utilization of wiring channels within the chip carrier in which signal wiring traces can be routed.
摘要:
An electronic device, including: a plurality of contacts pads on a surface of a substrate; the contacts pads spaced apart a first predetermined distance in a first direction; and the contact pads spaced apart a second predetermined distance in a second direction, the first predetermined distance different from the second predetermined distance, the first direction perpendicular to the second direction.
摘要:
A structure and associated method comprising contact pads on a surface of a substrate for coupling signal, power, and ground connections for an electrical device to a plurality of conductive wires on the substrate. The contact pads are formed in single lines along radial edges of sectors on the substrate. Each of the sectors comprise a predetermined angle between the radial edges of each of the sectors. The plurality of sectors collectively form a circular area. The contact pads comprise signal, power, and ground connections located at predetermined positions on the single lines along the radial edges of each of the sectors on the substrate.
摘要:
Detection circuits, methods of use and manufacture and design structures are provided herein. The structure includes at least one signal line traversing one or more metal layers of an integrated circuit. Circuitry is coupled to the at least one signal line, which is structured to receive a signal with a known signal from the at least one signal line or a signal from a different potential and, based on which signal is received, determine whether there is a structural defect in the integrated circuit.
摘要:
A method of reducing white bump formation and dielectric cracking under controlled collapse chip connections (C4s). The method comprises fabricating a substrate having a plurality of metallization layers, one or more of the layers is of low k dielectric material. The substrate includes a plurality of attachment pads for the C4s. The fabricating comprises selectively forming at least a portion of the substrate with metal fill having a higher Young's modulus of elasticity than any of the one or more layers of low k dielectric material in portions of the substrate located beneath at least some of the attachment pads.
摘要:
A computer-implemented method provides an elastic modulus map of a chip carrier of a flip chip package. Design data including dielectric and conductive design elements of each of vertically aligned sub-areas of each of the layers of the chip carrier are modeled as springs to provide the elastic modulus map. Determining the elastic modulus of the sub-areas of the chip carrier identifies probable mechanical failure sites during chip-join and cools down of the flip chip package. Modifying a footprint of solder bumps to the chip carrier reduces stresses applied to the identified probable mechanical failure sites. Modifying the chip carrier design to reduce a stiffness of sub-areas associated with identified probable mechanical failure sites also reduces stresses from chip-join and cool-down.
摘要:
A method of reducing white bump formation and dielectric cracking under controlled collapse chip connections (C4s). The method comprises fabricating a substrate having a plurality of metallization layers, one or more of the layers is of low k dielectric material. The substrate includes a plurality of attachment pads for the C4s. The fabricating comprises selectively forming at least a portion of the substrate with metal fill having a higher Young's modulus of elasticity than any of the one or more layers of low k dielectric material in portions of the substrate located beneath at least some of the attachment pads.