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公开(公告)号:US20120045611A1
公开(公告)日:2012-02-23
申请号:US12858211
申请日:2010-08-17
申请人: Ying-Ching Shih , Weng-Jin Wu , Jing-Cheng Lin , Wen-Chih Chiou , Shin-Puu Jeng , Chen-Hua Yu
发明人: Ying-Ching Shih , Weng-Jin Wu , Jing-Cheng Lin , Wen-Chih Chiou , Shin-Puu Jeng , Chen-Hua Yu
IPC分类号: H01L23/12 , B32B3/24 , B32B3/26 , B32B38/10 , H01L21/50 , B32B37/02 , B32B37/12 , B32B17/06 , B32B7/12
CPC分类号: G07F17/3213 , B32B17/10 , B32B37/1207 , B32B37/182 , B32B37/185 , B32B2457/14 , H01L21/6835 , H01L2221/68318 , H01L2221/68327 , H01L2221/6834 , H01L2221/68381
摘要: A composite carrier structure for manufacturing semiconductor devices is provided. The composite carrier structure utilizes multiple carrier substrates, e.g., glass or silicon substrates, coupled together by interposed adhesive layers. The composite carrier structure may be attached to a wafer or a die for, e.g., backside processing, such as thinning processes. In an embodiment, the composite carrier structure comprises a first carrier substrate having through-substrate vias formed therethrough. The first substrate is attached to a second substrate using an adhesive such that the adhesive may extend into the through-substrate vias.
摘要翻译: 提供了一种用于制造半导体器件的复合载体结构。 复合载体结构利用多个载体衬底,例如玻璃或硅衬底,通过插入的粘合剂层耦合在一起。 复合载体结构可以附接到晶片或模具,用于例如背面处理,例如变薄处理。 在一个实施例中,复合载体结构包括具有贯穿其中形成的贯通基板通孔的第一载体基板。 使用粘合剂将第一衬底附接到第二衬底,使得粘合剂可以延伸到贯穿衬底通孔中。
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公开(公告)号:US08846499B2
公开(公告)日:2014-09-30
申请号:US12858211
申请日:2010-08-17
申请人: Ying-Ching Shih , Weng-Jin Wu , Jing-Cheng Lin , Wen-Chih Chiou , Shin-Puu Jeng , Chen-Hua Yu
发明人: Ying-Ching Shih , Weng-Jin Wu , Jing-Cheng Lin , Wen-Chih Chiou , Shin-Puu Jeng , Chen-Hua Yu
IPC分类号: H01L21/30
CPC分类号: G07F17/3213 , B32B17/10 , B32B37/1207 , B32B37/182 , B32B37/185 , B32B2457/14 , H01L21/6835 , H01L2221/68318 , H01L2221/68327 , H01L2221/6834 , H01L2221/68381
摘要: A composite carrier structure for manufacturing semiconductor devices is provided. The composite carrier structure utilizes multiple carrier substrates, e.g., glass or silicon substrates, coupled together by interposed adhesive layers. The composite carrier structure may be attached to a wafer or a die for, e.g., backside processing, such as thinning processes. In an embodiment, the composite carrier structure comprises a first carrier substrate having through-substrate vias formed therethrough. The first substrate is attached to a second substrate using an adhesive such that the adhesive may extend into the through-substrate vias.
摘要翻译: 提供了一种用于制造半导体器件的复合载体结构。 复合载体结构利用多个载体衬底,例如玻璃或硅衬底,通过插入的粘合剂层耦合在一起。 复合载体结构可以附接到晶片或模具,用于例如背面处理,例如变薄处理。 在一个实施例中,复合载体结构包括具有贯穿其中形成的贯通基板通孔的第一载体基板。 使用粘合剂将第一衬底附接到第二衬底,使得粘合剂可以延伸到贯穿衬底通孔中。
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公开(公告)号:US08581418B2
公开(公告)日:2013-11-12
申请号:US12840949
申请日:2010-07-21
申请人: Weng-Jin Wu , Ying-Ching Shih , Wen-Chih Chiou , Shin-Puu Jeng , Chen-Hua Yu
发明人: Weng-Jin Wu , Ying-Ching Shih , Wen-Chih Chiou , Shin-Puu Jeng , Chen-Hua Yu
IPC分类号: H01L23/48
CPC分类号: H01L21/768 , H01L21/56 , H01L21/563 , H01L21/6835 , H01L23/147 , H01L23/293 , H01L23/3107 , H01L23/3128 , H01L23/3157 , H01L23/481 , H01L23/5384 , H01L24/11 , H01L24/14 , H01L24/97 , H01L25/0652 , H01L25/0655 , H01L2224/0401 , H01L2224/06181 , H01L2224/13022 , H01L2224/13025 , H01L2224/13099 , H01L2224/131 , H01L2224/13124 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13184 , H01L2224/1403 , H01L2224/14181 , H01L2224/16147 , H01L2224/16225 , H01L2224/16227 , H01L2224/16235 , H01L2224/16237 , H01L2224/73204 , H01L2224/81005 , H01L2224/81192 , H01L2224/81801 , H01L2224/81895 , H01L2224/83102 , H01L2224/92125 , H01L2924/00011 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01074 , H01L2924/01075 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/10253 , H01L2924/10271 , H01L2924/10272 , H01L2924/10329 , H01L2924/14 , H01L2924/15321 , H01L2924/181 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/00014 , H01L2924/00 , H01L2224/81805
摘要: A device includes a first die having a first side and a second side opposite to first side, the first side includes a first region and a second region, and a first metal bump of a first horizontal size formed on the first region of the first side of the first die. A second die is bonded to the first side of the first die through the first metal bump. A dielectric layer is formed over the first side of the first die and includes a first portion directly over the second die, a second portion encircling the second die, and an opening exposing the second region of the first side of the first die. A second metal bump of a second horizontal size is formed on the second region of the first side of the first die and extending into the opening of the dielectric layer. The second horizontal size is greater than the first horizontal size. An electrical component is bonded to the first side of the first die through the second metal bump.
摘要翻译: 一种器件包括具有第一侧和与第一侧相对的第二侧的第一管芯,第一侧包括第一区域和第二区域,以及形成在第一侧面的第一区域上的第一水平尺寸的第一金属凸块 的第一个死亡。 通过第一金属凸块将第二模具结合到第一模具的第一侧。 介电层形成在第一管芯的第一侧上,并且包括直接在第二管芯上方的第一部分,环绕第二管芯的第二部分和暴露第一管芯的第一侧的第二区域的开口。 第二水平尺寸的第二金属凸块形成在第一模具的第一侧的第二区域上并且延伸到电介质层的开口中。 第二个水平尺寸大于第一个水平尺寸。 电子部件通过第二金属凸块接合到第一管芯的第一侧。
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公开(公告)号:US20120018876A1
公开(公告)日:2012-01-26
申请号:US12840949
申请日:2010-07-21
申请人: Weng-Jin Wu , Ying-Ching Shih , Wen-Chih Chiou , Shin-Puu Jeng , Chen-Hua Yu
发明人: Weng-Jin Wu , Ying-Ching Shih , Wen-Chih Chiou , Shin-Puu Jeng , Chen-Hua Yu
IPC分类号: H01L23/485 , H01L21/768
CPC分类号: H01L21/768 , H01L21/56 , H01L21/563 , H01L21/6835 , H01L23/147 , H01L23/293 , H01L23/3107 , H01L23/3128 , H01L23/3157 , H01L23/481 , H01L23/5384 , H01L24/11 , H01L24/14 , H01L24/97 , H01L25/0652 , H01L25/0655 , H01L2224/0401 , H01L2224/06181 , H01L2224/13022 , H01L2224/13025 , H01L2224/13099 , H01L2224/131 , H01L2224/13124 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13184 , H01L2224/1403 , H01L2224/14181 , H01L2224/16147 , H01L2224/16225 , H01L2224/16227 , H01L2224/16235 , H01L2224/16237 , H01L2224/73204 , H01L2224/81005 , H01L2224/81192 , H01L2224/81801 , H01L2224/81895 , H01L2224/83102 , H01L2224/92125 , H01L2924/00011 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01074 , H01L2924/01075 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/10253 , H01L2924/10271 , H01L2924/10272 , H01L2924/10329 , H01L2924/14 , H01L2924/15321 , H01L2924/181 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/00014 , H01L2924/00 , H01L2224/81805
摘要: A device includes a first die having a first side and a second side opposite to first side, the first side includes a first region and a second region, and a first metal bump of a first horizontal size formed on the first region of the first side of the first die. A second die is bonded to the first side of the first die through the first metal bump. A dielectric layer is formed over the first side of the first die and includes a first portion directly over the second die, a second portion encircling the second die, and an opening exposing the second region of the first side of the first die. A second metal bump of a second horizontal size is formed on the second region of the first side of the first die and extending into the opening of the dielectric layer. The second horizontal size is greater than the first horizontal size. An electrical component is bonded to the first side of the first die through the second metal bump.
摘要翻译: 一种器件包括具有第一侧和与第一侧相对的第二侧的第一管芯,第一侧包括第一区域和第二区域,以及形成在第一侧面的第一区域上的第一水平尺寸的第一金属凸块 的第一个死亡。 通过第一金属凸块将第二模具结合到第一模具的第一侧。 介电层形成在第一管芯的第一侧上,并且包括直接在第二管芯上方的第一部分,环绕第二管芯的第二部分和暴露第一管芯的第一侧的第二区域的开口。 第二水平尺寸的第二金属凸块形成在第一模具的第一侧的第二区域上并且延伸到电介质层的开口中。 第二个水平尺寸大于第一个水平尺寸。 电子部件通过第二金属凸块接合到第一管芯的第一侧。
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公开(公告)号:US08426961B2
公开(公告)日:2013-04-23
申请号:US12823851
申请日:2010-06-25
申请人: Ying-Ching Shih , Jing-Cheng Lin , Wen-Chih Chiou , Shin-Puu Jeng , Chen-Hua Yu
发明人: Ying-Ching Shih , Jing-Cheng Lin , Wen-Chih Chiou , Shin-Puu Jeng , Chen-Hua Yu
IPC分类号: H01L23/14 , H01L23/498 , H01L23/538 , H01L25/065 , H01L21/48
CPC分类号: H01L21/76885 , H01L21/486 , H01L21/56 , H01L23/13 , H01L23/147 , H01L23/3128 , H01L23/49816 , H01L23/49827 , H01L23/5389 , H01L24/94 , H01L24/97 , H01L25/0657 , H01L2224/04105 , H01L2224/11002 , H01L2224/12105 , H01L2224/13025 , H01L2224/14181 , H01L2224/16148 , H01L2224/16238 , H01L2224/2518 , H01L2224/32145 , H01L2224/32225 , H01L2224/73204 , H01L2224/73267 , H01L2224/92244 , H01L2224/94 , H01L2224/97 , H01L2225/06513 , H01L2225/06517 , H01L2225/06524 , H01L2225/06548 , H01L2924/01322 , H01L2924/14 , H01L2924/15153 , H01L2924/181 , H05K1/0306 , H05K1/185 , H05K3/4007 , H05K2203/016 , H05K2203/025 , H01L2224/83 , H01L2224/82 , H01L2224/16225 , H01L2924/00 , H01L2224/16145 , H01L2924/00012
摘要: A device includes an interposer, which includes a substrate; and at least one dielectric layer over the substrate. A plurality of through-substrate vias (TSVs) penetrate through the substrate. A first metal bump is in the at least one dielectric layer and electrically coupled to the plurality of TSVs. A second metal bump is over the at least one dielectric layer. A die is embedded in the at least one dielectric layer and bonded to the first metal bump.
摘要翻译: 一种装置包括:插入件,其包括基板; 以及衬底上的至少一个电介质层。 多个穿通基板通孔(TSV)穿透基板。 第一金属凸块在至少一个电介质层中并电耦合到多个TSV。 第二金属凸块在至少一个电介质层的上方。 模具嵌入在至少一个电介质层中并结合到第一金属凸块。
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公开(公告)号:US20110316147A1
公开(公告)日:2011-12-29
申请号:US12823851
申请日:2010-06-25
申请人: Ying-Ching Shih , Jing-Cheng Lin , Wen-Chih Chiou , Shin-Puu Jeng , Chen-Hua Yu
发明人: Ying-Ching Shih , Jing-Cheng Lin , Wen-Chih Chiou , Shin-Puu Jeng , Chen-Hua Yu
IPC分类号: H01L23/488
CPC分类号: H01L21/76885 , H01L21/486 , H01L21/56 , H01L23/13 , H01L23/147 , H01L23/3128 , H01L23/49816 , H01L23/49827 , H01L23/5389 , H01L24/94 , H01L24/97 , H01L25/0657 , H01L2224/04105 , H01L2224/11002 , H01L2224/12105 , H01L2224/13025 , H01L2224/14181 , H01L2224/16148 , H01L2224/16238 , H01L2224/2518 , H01L2224/32145 , H01L2224/32225 , H01L2224/73204 , H01L2224/73267 , H01L2224/92244 , H01L2224/94 , H01L2224/97 , H01L2225/06513 , H01L2225/06517 , H01L2225/06524 , H01L2225/06548 , H01L2924/01322 , H01L2924/14 , H01L2924/15153 , H01L2924/181 , H05K1/0306 , H05K1/185 , H05K3/4007 , H05K2203/016 , H05K2203/025 , H01L2224/83 , H01L2224/82 , H01L2224/16225 , H01L2924/00 , H01L2224/16145 , H01L2924/00012
摘要: A device includes an interposer, which includes a substrate; and at least one dielectric layer over the substrate. A plurality of through-substrate vias (TSVs) penetrate through the substrate. A first metal bump is in the at least one dielectric layer and electrically coupled to the plurality of TSVs. A second metal bump is over the at least one dielectric layer. A die is embedded in the at least one dielectric layer and bonded to the first metal bump.
摘要翻译: 一种装置包括:插入件,其包括基板; 以及衬底上的至少一个电介质层。 多个穿通基板通孔(TSV)穿透基板。 第一金属凸块在至少一个电介质层中并电耦合到多个TSV。 第二金属凸块在至少一个电介质层的上方。 模具嵌入在至少一个电介质层中并结合到第一金属凸块。
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公开(公告)号:US20120001337A1
公开(公告)日:2012-01-05
申请号:US12827563
申请日:2010-06-30
申请人: Chen-Yu Tsai , Shih-Hui Wang , Chien-Ming Chiu , Chia-Ho Chen , Fang Wen Tsai , Weng-Jin Wu , Jing-Cheng Lin , Wen-Chih Chiou , Shin-Puu Jeng , Chen-Hua Yu
发明人: Chen-Yu Tsai , Shih-Hui Wang , Chien-Ming Chiu , Chia-Ho Chen , Fang Wen Tsai , Weng-Jin Wu , Jing-Cheng Lin , Wen-Chih Chiou , Shin-Puu Jeng , Chen-Hua Yu
IPC分类号: H01L23/532 , H01L21/71 , H01L23/522
CPC分类号: H01L23/481 , H01L21/30604 , H01L21/6835 , H01L21/76831 , H01L21/76877 , H01L21/76898 , H01L23/544 , H01L2221/68327 , H01L2223/54426 , H01L2224/13
摘要: In accordance with an embodiment, a structure comprises a substrate having a first area and a second area; a through substrate via (TSV) in the substrate penetrating the first area of the substrate; an isolation layer over the second area of the substrate, the isolation layer having a recess; and a conductive material in the recess of the isolation layer, the isolation layer being disposed between the conductive material and the substrate in the recess.
摘要翻译: 根据实施例,结构包括具有第一区域和第二区域的基板; 穿过基板的第一区域的贯穿基板通孔(TSV); 在所述衬底的所述第二区域上方的隔离层,所述隔离层具有凹部; 以及在所述隔离层的所述凹部中的导电材料,所述隔离层设置在所述凹部中的所述导电材料和所述基板之间。
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公开(公告)号:US08896136B2
公开(公告)日:2014-11-25
申请号:US12827563
申请日:2010-06-30
申请人: Chen-Yu Tsai , Shih-Hui Wang , Chien-Ming Chiu , Chia-Ho Chen , Fang Wen Tsai , Weng-Jin Wu , Jing-Cheng Lin , Wen-Chih Chiou , Shin-Puu Jeng , Chen-Hua Yu
发明人: Chen-Yu Tsai , Shih-Hui Wang , Chien-Ming Chiu , Chia-Ho Chen , Fang Wen Tsai , Weng-Jin Wu , Jing-Cheng Lin , Wen-Chih Chiou , Shin-Puu Jeng , Chen-Hua Yu
IPC分类号: H01L23/544 , H01L29/40 , H01L23/48 , H01L23/52 , H01L21/76 , H01L21/00 , H01L21/4763 , H01L21/44 , H01L21/683
CPC分类号: H01L23/481 , H01L21/30604 , H01L21/6835 , H01L21/76831 , H01L21/76877 , H01L21/76898 , H01L23/544 , H01L2221/68327 , H01L2223/54426 , H01L2224/13
摘要: In accordance with an embodiment, a structure comprises a substrate having a first area and a second area; a through substrate via (TSV) in the substrate penetrating the first area of the substrate; an isolation layer over the second area of the substrate, the isolation layer having a recess; and a conductive material in the recess of the isolation layer, the isolation layer being disposed between the conductive material and the substrate in the recess.
摘要翻译: 根据实施例,结构包括具有第一区域和第二区域的基板; 穿过基板的第一区域的贯穿基板通孔(TSV); 在所述衬底的所述第二区域上方的隔离层,所述隔离层具有凹部; 以及在所述隔离层的所述凹部中的导电材料,所述隔离层设置在所述凹部中的所述导电材料和所述基板之间。
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公开(公告)号:US08900994B2
公开(公告)日:2014-12-02
申请号:US13157137
申请日:2011-06-09
申请人: Chen-Hua Yu , Shin-Puu Jeng , Wen-Chih Chiou , Fang Wen Tsai , Chen-Yu Tsai
发明人: Chen-Hua Yu , Shin-Puu Jeng , Wen-Chih Chiou , Fang Wen Tsai , Chen-Yu Tsai
IPC分类号: H01L21/44 , H01L25/065 , H01L23/00 , H01L23/48 , H01L21/683
CPC分类号: H01L25/0657 , H01L21/0217 , H01L21/6835 , H01L21/76831 , H01L21/76834 , H01L21/76871 , H01L21/76895 , H01L21/76898 , H01L23/481 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/14 , H01L24/16 , H01L25/50 , H01L2221/68372 , H01L2224/03002 , H01L2224/0345 , H01L2224/03452 , H01L2224/03462 , H01L2224/0347 , H01L2224/0391 , H01L2224/0401 , H01L2224/05008 , H01L2224/05018 , H01L2224/05023 , H01L2224/05025 , H01L2224/05073 , H01L2224/05144 , H01L2224/05147 , H01L2224/05155 , H01L2224/05166 , H01L2224/05548 , H01L2224/05559 , H01L2224/05562 , H01L2224/05568 , H01L2224/05647 , H01L2224/13023 , H01L2224/13025 , H01L2224/1411 , H01L2224/14181 , H01L2224/16113 , H01L2224/16145 , H01L2224/16225 , H01L2224/16227 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2924/00014 , H01L2924/10253 , H01L2924/01029 , H01L2224/05552
摘要: A system and method for manufacturing a through silicon via is disclosed. An embodiment comprises forming a through silicon via with a liner protruding from a substrate. A passivation layer is formed over the substrate and the through silicon via, and the passivation layer and liner are recessed from the sidewalls of the through silicon via. Conductive material may then be formed in contact with both the sidewalls and a top surface of the through silicon via.
摘要翻译: 公开了一种制造硅通孔的系统和方法。 一个实施例包括用从衬底突出的衬垫形成通孔硅通孔。 钝化层形成在衬底和穿通硅通孔之上,钝化层和衬垫从通硅通孔的侧壁凹陷。 然后可以将导电材料形成为与通孔硅通孔的两个侧壁和顶表面接触。
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公开(公告)号:US08759150B2
公开(公告)日:2014-06-24
申请号:US13488188
申请日:2012-06-04
申请人: Hsien-Pin Hu , Chen-Hua Yu , Shin-Puu Jeng , Shang-Yun Hou , Jing-Cheng Lin , Wen-Chih Chiou , Hung-Jung Tu
发明人: Hsien-Pin Hu , Chen-Hua Yu , Shin-Puu Jeng , Shang-Yun Hou , Jing-Cheng Lin , Wen-Chih Chiou , Hung-Jung Tu
IPC分类号: H01L21/50
CPC分类号: H01L21/561 , H01L21/486 , H01L23/147 , H01L23/3128 , H01L23/49816 , H01L23/49822 , H01L23/49827 , H01L24/97 , H01L25/0655 , H01L2224/05001 , H01L2224/05027 , H01L2224/05571 , H01L2224/16225 , H01L2224/16227 , H01L2224/32225 , H01L2224/73204 , H01L2224/97 , H01L2924/00014 , H01L2924/01029 , H01L2924/01322 , H01L2924/014 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2924/18161 , H01L2224/81 , H01L2924/00012 , H01L2924/00 , H01L2224/05541 , H01L2224/05005 , H01L2224/05599 , H01L2224/05099
摘要: A method includes providing an interposer wafer including a substrate, and a plurality of through-substrate vias (TSVs) extending from a front surface of the substrate into the substrate. A plurality of dies is bonded onto a front surface of the interposer wafer. After the step of bonding the plurality of dies, a grinding is performed on a backside of the substrate to expose the plurality of TSVs. A plurality of metal bumps is formed on a backside of the interposer wafer and electrically coupled to the plurality of TSVs.
摘要翻译: 一种方法包括提供包括衬底的中介层晶片,以及从衬底的前表面延伸到衬底中的多个贯通衬底通孔(TSV)。 多个管芯结合到插入件晶片的前表面上。 在结合多个模具的步骤之后,在基板的背面进行研磨以暴露多个TSV。 多个金属凸块形成在插入器晶片的背面并电耦合到多个TSV。
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