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1.发明授权公开(公告)号：US12119613B2
公开(公告)日：2024-10-15
申请号：US16985916
申请日：2020-08-05
发明人： Atsushi Sugiyama , Akio Ito , Tadataka Edamura
CPC分类号： H01S5/0287 , G02B1/113 , H01S5/166 , H01S5/3402 , H01S5/12 , H01S5/22
摘要： A sintered body of the present invention includes cerium oxide and cerium fluoride or yttrium fluoride.
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2.发明公开公开(公告)号：US20240332910A1
公开(公告)日：2024-10-03
申请号：US18572689
申请日：2023-05-29
申请人： SUZHOU EVERBRIGHT PHOTONICS CO., LTD. , EVERBRIGHT INSTITUTE OF SEMICONDUCTOR PHOTONICS CO., LTD.
发明人： Jun WANG , Shaoyang TAN , Li ZHOU , Yang CHENG , Xiao XIAO , Yintao GUO , Hao YU , Quanling LI , Xinsheng LIAO , Dayong MIN
CPC分类号： H01S5/3403 , H01S5/3407 , H01S5/3434 , H01S5/34353 , H01S5/3436
摘要： A high-efficiency active layer includes a strained quantum well layer and, at one side thereof, a first strained barrier layer configured to transport electrons. The first strained barrier layer and the strained quantum well layers are configured to form strain compensation. A second barrier layer is positioned on the other side of the strained quantum well layer and is configured to transport holes. A band offset between conduction bands of the first strained barrier layer and of the strained quantum well layer is less than a band offset between valence bands of the strained quantum well layer and of the first strained barrier layer. A band offset between valence bands of the strained quantum well layer and of the second barrier layer is less than a band offset between conduction bands of the second barrier layer and of the strained quantum well layer. Light-emitting efficiency and reliability are improved.
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公开(公告)号：US20240313509A1
公开(公告)日：2024-09-19
申请号：US18575153
申请日：2022-06-30
CPC分类号： H01S5/34346 , H01S5/0218 , H01S5/3422
摘要： The invention relates to an optoelectronic component (1) that is insensitive to dislocations, comprising:
a semiconductor heterostructure (2) able to emit laser radiation, said semiconductor heterostructure being formed from first semiconductors comprising a cascade of gain-providing active regions (21) in which the inter-band radiative transition is of type II, and
a carrier structure (30) comprising a non-native substrate (3) different from the first semiconductors, said semiconductor heterostructure (2) being formed by epitaxial growth on the carrier structure (30),
wherein the active regions have a dislocation density higher than 107 .cm−2.-
公开(公告)号：US12076080B2
公开(公告)日：2024-09-03
申请号：US17338395
申请日：2021-06-03
发明人： Fatima Toor
CPC分类号： A61B18/22 , A61B90/36 , H01S5/3401 , A61B2018/00577 , A61B2018/2015 , A61B2018/2035 , A61B2018/2233
摘要： An apparatus and method of treatment of an animal using the apparatus are disclosed. The apparatus includes a scalpel, a laser included in the scalpel, and a visible light source included in the scalpel. The visible light source provides a visible targeting beam. The method of treatment includes activating a visible targeting beam in a laser scalpel. The visible targeting beam has an illumination intensity. The method further includes illuminating a tumor that includes cancerous cells and non-cancerous cells with the visible targeting beam, activating an invisible mid-infrared laser included in the scalpel to produce a laser spot at the tumor, and ablating the cancerous cells while leaving the non-cancerous cells substantially undamaged.
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公开(公告)号：US20240291240A1
公开(公告)日：2024-08-29
申请号：US18655906
申请日：2024-05-06
IPC分类号： H01S5/32 , B82Y20/00 , H01S3/04 , H01S3/067 , H01S3/094 , H01S3/0941 , H01S3/30 , H01S5/00 , H01S5/02251 , H01S5/02253 , H01S5/024 , H01S5/028 , H01S5/10 , H01S5/14 , H01S5/20 , H01S5/22 , H01S5/227 , H01S5/34 , H01S5/343
CPC分类号： H01S5/3216 , H01S3/0675 , H01S3/06754 , H01S5/02251 , H01S5/02253 , H01S5/1064 , H01S5/2018 , H01S5/2077 , H01S5/2205 , H01S5/2206 , H01S5/227 , H01S5/3213 , H01S5/34 , H01S5/3406 , H01S5/34306 , H01S5/3434 , B82Y20/00 , H01S3/04 , H01S3/094003 , H01S3/094011 , H01S3/09415 , H01S3/302 , H01S5/0064 , H01S5/024 , H01S5/0287 , H01S5/1039 , H01S5/146 , H01S5/2222 , H01S2301/03 , H01S2301/166
摘要： An optical semiconductor device outputting a predetermined wavelength of laser light includes a quantum well active layer positioned between a p-type cladding layer and an n-type cladding layer in thickness direction. The optical semiconductor device includes a separate confinement heterostructure layer positioned between the quantum well active layer and the n-type cladding layer. The optical semiconductor device further includes an electric-field-distribution-control layer positioned between the separate confinement heterostructure layer and the n-type cladding layer and configured by at least two semiconductor layers having band gap energy greater than band gap energy of a barrier layer constituting the quantum well active layer. The optical semiconductor device is applied to a ridge-stripe type laser.
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公开(公告)号：US12072351B1
公开(公告)日：2024-08-27
申请号：US16954000
申请日：2020-11-20
CPC分类号： G01Q60/06 , C12Q1/6869 , G01N21/65 , H01S5/0601 , H01S5/3402 , H01S5/343
摘要： A new integrated III-V/silicon Atomic Force Microscopy (AFM) active optical probe integrates a III-V semiconductor laser source and a silicon cantilever AFM probe into a robust easy-to-use single III-V/silicon chip to enable AFM measurements, optical imaging, and spectroscopy at the nanoscale.
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公开(公告)号：US20240266469A1
公开(公告)日：2024-08-08
申请号：US18629555
申请日：2024-04-08
发明人： Petar Atanackovic
IPC分类号： H01L33/26 , H01L21/02 , H01L23/66 , H01L27/15 , H01L29/15 , H01L29/20 , H01L29/24 , H01L29/267 , H01L29/51 , H01L29/66 , H01L29/778 , H01L29/786 , H01L33/00 , H01L33/06 , H01L33/16 , H01L33/18 , H01L33/62 , H01S5/34
CPC分类号： H01L33/26 , H01L21/02178 , H01L21/02192 , H01L21/02194 , H01L21/0228 , H01L21/02458 , H01L21/02507 , H01L23/66 , H01L27/15 , H01L29/151 , H01L29/2003 , H01L29/24 , H01L29/267 , H01L29/517 , H01L29/66462 , H01L29/7869 , H01L33/002 , H01L33/007 , H01L33/06 , H01L33/16 , H01L33/18 , H01L33/62 , H01S5/34 , H01L29/778 , H01L29/7786 , H01L2223/6627
摘要： The techniques described herein relate to a transistor including a substrate including sapphire, an epitaxial channel layer on the substrate, and an epitaxial gate layer on the channel layer. The epitaxial channel layer can include α-Ga2O3, with a first bandgap. The epitaxial gate layer can include an oxide material with a second bandgap, wherein the second bandgap is wider than the first bandgap. The transistor can also include electrical contacts, including: a source electrical contact coupled to the epitaxial channel layer; a drain electrical contact coupled to the epitaxial channel layer; and a gate electrical contact coupled to the epitaxial gate layer.
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公开(公告)号：US20240264076A1
公开(公告)日：2024-08-08
申请号：US18539113
申请日：2023-12-13
发明人： Shinji SAITO , Masatoshi HIRONO , Kei KANEKO , Tsutomu KAKUNO , Rei HASHIMOTO
IPC分类号： G01N21/3504 , G02B1/00 , G02B17/00 , H01S5/00 , H01S5/34
CPC分类号： G01N21/3504 , G02B1/005 , G02B17/002 , H01S5/005 , H01S5/3402 , G02B5/045
摘要： According to one embodiment, a sensing system includes a reflective optical element, and an optical device. The reflective optical element includes a plurality of optical structures arranged along a first plane. The optical device includes an element face. The optical device is configured to perform a first operation and a second operation. The optical device is configured to emit infrared rays from the element face in the first operation. The optical device is configured to detect the infrared rays reflected by the reflective optical element and incident on the element face in the second operation.
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公开(公告)号：US20240258460A1
公开(公告)日：2024-08-01
申请号：US18629606
申请日：2024-04-08
发明人： Petar Atanackovic
IPC分类号： H01L33/26 , H01L21/02 , H01L23/66 , H01L27/15 , H01L29/15 , H01L29/20 , H01L29/24 , H01L29/267 , H01L29/51 , H01L29/66 , H01L29/778 , H01L29/786 , H01L33/00 , H01L33/06 , H01L33/16 , H01L33/18 , H01L33/62 , H01S5/34
CPC分类号： H01L33/26 , H01L21/02178 , H01L21/02192 , H01L21/02194 , H01L21/0228 , H01L21/02458 , H01L21/02507 , H01L23/66 , H01L27/15 , H01L29/151 , H01L29/2003 , H01L29/24 , H01L29/267 , H01L29/517 , H01L29/66462 , H01L29/7869 , H01L33/002 , H01L33/007 , H01L33/06 , H01L33/16 , H01L33/18 , H01L33/62 , H01S5/34 , H01L29/778 , H01L29/7786 , H01L2223/6627
摘要： The techniques described herein relate to a transistor, including a substrate, an epitaxial buffer layer, an epitaxial channel layer, and a gate layer. The substrate includes a first oxide material with a first crystal symmetry, the epitaxial buffer layer includes a second oxide material with a second crystal symmetry, the epitaxial channel layer includes a third oxide material with a third crystal symmetry and a first bandgap, and the gate layer includes a fourth oxide material with a second bandgap. The first crystal symmetry is different from either the second crystal symmetry or the third crystal symmetry, and the second bandgap is wider than the first bandgap. The transistor also includes electrical contacts including a source electrical contact coupled to the epitaxial channel layer, a drain electrical contact coupled to the epitaxial channel layer, and a gate electrical contact coupled to the gate layer.
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公开(公告)号：US12046875B2
公开(公告)日：2024-07-23
申请号：US17313389
申请日：2021-05-06
CPC分类号： H01S5/3401 , H01S5/0425 , H01S5/0604 , H01S5/3086 , H01S5/3402 , H01S5/0287 , H01S5/04257 , H01S5/12 , H01S5/22 , H01S2302/02
摘要： A quantum cascade laser device includes a semiconductor substrate, an active layer provided on the semiconductor substrate, and an upper clad layer provided on a side of the active layer opposite to the semiconductor substrate side and having a doping concentration of impurities of less than 1×1017 cm−3. Unit laminates included in the active layer each include a first emission upper level, a second emission upper level, and at least one emission lower level in their subband level structure. The active layer is configured to generate light having a center wavelength of 10 μm or more due to electron transition between at least two levels of the first emission upper level, the second emission upper level, and the at least one emission lower level in the light emission layer in each of the unit laminates.
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