QUANTUM-CASCADE LASER ELEMENT AND QUANTUM-CASCADE LASER DEVICE

    公开(公告)号:US20230139139A1

    公开(公告)日:2023-05-04

    申请号:US17914806

    申请日:2021-03-25

    摘要: A quantum-cascade laser element includes: an embedding layer including a first portion formed on a side surface of a ridge portion, and a second portion extending from an edge portion of the first portion on a side of a semiconductor substrate along a width direction of the semiconductor substrate; and a metal layer formed at least on a top surface of the ridge portion and on the first portion. A surface of the second portion on a side opposite to the semiconductor substrate is located between a surface of an active layer on a side opposite to the semiconductor substrate and a surface of the active layer on a side of the semiconductor substrate. When viewed in the width direction of the semiconductor substrate, a part of the metal layer on the first portion overlaps the active layer. The metal layer is directly formed on the first portion.

    QUANTUM CASCADE LASER ELEMENT AND QUANTUM CASCADE LASER DEVICE

    公开(公告)号:US20230132974A1

    公开(公告)日:2023-05-04

    申请号:US17914525

    申请日:2021-03-25

    摘要: A quantum-cascade laser element includes: a semiconductor substrate; a semiconductor mesa formed on the semiconductor substrate to include an active layer having a quantum-cascade structure and to extend along a light waveguide direction; an embedding layer formed to interpose the semiconductor mesa along a width direction of the semiconductor substrate; a cladding layer formed over the semiconductor mesa and over the embedding layer; and a metal layer formed on the cladding layer. A pair of groove portions extending along the light waveguide direction are formed in a surface on an opposite side of the cladding layer from the semiconductor substrate. The pair of groove portions are disposed in two respective outer regions when the cladding layer is equally divided into four regions in the width direction of the semiconductor substrate. The metal layer enters the pair of groove portions.

    VERTICALLY OFFSET VERTICAL CAVITY SURFACE EMITTING LASERS

    公开(公告)号:US20230102622A1

    公开(公告)日:2023-03-30

    申请号:US17453060

    申请日:2021-11-01

    摘要: A vertical cavity surface emitting laser (VCSEL) device may include a substrate layer and a first set of epitaxial layers, for a first VCSEL, disposed on the substrate layer. The first set of epitaxial layers may include a first set of mirrors and at least one first active layer. The VCSEL device may include a second set of epitaxial layers, for a second VCSEL, disposed on the first set of epitaxial layers for the first VCSEL. The second set of epitaxial layers may include a second set of mirrors and at least one second active layer. The first VCSEL and the second VCSEL may be configured to emit light in a light emission direction. The at least one first active layer of the first VCSEL may be offset in the light emission direction from the at least one second active layer of the second VCSEL.

    EXTERNAL RESONANT LASER MODULE
    5.
    发明申请

    公开(公告)号:US20230087419A1

    公开(公告)日:2023-03-23

    申请号:US17945252

    申请日:2022-09-15

    摘要: The laser module includes a QCL element, a diffraction grating unit, a first lens holder, a second lens holder, and a mount member. The first mounting portion has a first top surface on which the first lens holder is mounted via an adhesive layer. The third mounting portion has a third top surface on which the second lens holder is mounted via an adhesive layer. The second mounting portion has a second top surface located higher than the first top surface and the third top surface, a first side surface connecting the second top surface and the first top surface, and a second side surface connecting the second top surface and the third top surface. A notch extending from the second top surface to the first top surface or the third top surface is formed in at least one of the first side surface and the second side surface.

    Semiconductor Structures
    7.
    发明申请

    公开(公告)号:US20230051827A1

    公开(公告)日:2023-02-16

    申请号:US17957197

    申请日:2022-09-30

    摘要: A semiconductor device comprises a substrate, one or more first III-semiconductor layers, and a plurality of superlattice structures between the substrate and the one or more first layers. The plurality of superlattice structures comprises an initial superlattice structure and one or more further superlattice structures between the initial superlattice structure and the one or more first layers. The plurality of superlattice structures is configured such that a strain-thickness product of semiconductor layer pairs in each superlattice structure of the one or more further superlattice structures is greater than or equal to a strain-thickness product of semiconductor layer pairs in superlattice structure(s) of the plurality of superlattice structures between that superlattice structure and the substrate. The plurality of superlattice structures is also configured such that a strain-thickness product of semiconductor layer pairs in at least one of the one or more further superlattice structures is greater than a strain-thickness product of semiconductor layer pairs in the initial superlattice structure.

    Monolithically Integrated Mid-Infrared Two-Dimensional Optical Phased Array

    公开(公告)号:US20230036709A1

    公开(公告)日:2023-02-02

    申请号:US17093612

    申请日:2020-11-09

    IPC分类号: H01S5/12 H01S5/34 H01S5/10

    摘要: A novel, monolithically integrated mid-IR optical phased array (OPA) structure which eliminates the wafer bonding process to achieve highly efficient surface emitting optical beam steering in two dimensions is disclosed. Since solar energy is about 15-20 times smaller than that at 1.55 um, mid-IR is more favorable for the atmospheric transmission due to lower solar radiance backgrounds. For the beam steering, thermo-optic phase shifting is used for azimuthal plane beam steering and laser wavelength tuning is used for elevation plane beam steering. The OPA structure disclosed comprises a wavelength- tunable a QCL, a 1×32 splitter, thermo-optic phase-shifters, and sub-wavelength grating emitters. The disclosed OPA provides a low-cost, low-loss, low-power consumption, robust, small footprint, apparatus that may be used with expendable UAV swarms. A LiDAR may be created by monolithically integrating a QCD with the apparatus. Other embodiments are described and claimed.

    Light emitting device and projector

    公开(公告)号:US11569636B2

    公开(公告)日:2023-01-31

    申请号:US16912781

    申请日:2020-06-26

    发明人: Takashi Miyata

    摘要: A light emitting device includes a substrate, a laminated structure provided to the substrate, and including a plurality of columnar parts, and an electrode disposed at an opposite side to the substrate of the laminated structure, wherein the columnar parts have a light emitting layer, the columnar parts are disposed between the electrode and the substrate, light generated in the light emitting layer propagates through the plurality of columnar parts to cause laser oscillation, and the electrode is provided with a hole.