Abstract:
A manufacturing method of a substrate with through electrodes 14, comprising a substrate 11 having through holes 18, and through electrodes 14 received in the through holes 18, includes a through electrode formation step of forming the through electrodes 14 on a support plate, a substrate formation step of forming the substrate 11, a through electrode reception step of stacking the substrate 11 on the support plate and receiving the through electrodes 14 in the through holes 18, a resin filling step of filling gaps between side surfaces of the through electrodes and inner walls of the through holes of the substrate 11 with a resin 12, and a support plate removal step of removing the support plate after the resin filling step.
Abstract:
In a spread illuminating apparatus including: an LED (3) at a side surface of a light conductor plate; and an FPC (10) having a land (26) formed on a side thereof for mounting the LED, throughholes (42) are formed at the land, and solder is contained at least partly in each of the throughholes, whereby the LED can be mounted solidly on the FPC with a high precision in height position from the FPC, and at the same time the heat emitted from the LED can be efficiently conducted to a conductive pattern at the rear side of the FPC through an electrode terminal of the LED and the throughholes filled with the solder composed of a metallic material having a high heat conductance.
Abstract:
A stacked via structure (200) adapted to transmit high frequency signals or high intensity current through conductive layers of an electronic device carrier is disclosed. The stacked via structure comprises at least three conductive tracks (205a, 205b, 205c) belonging to three adjacent conductive layers (110a, 110b, 110c) separated by dielectric layers (120), aligned according to z axis. Connections between these conductive tracks are done with at least two vias (210, 215) between each conductive layer. Vias connected to one side of a conductive track are disposed such that they are not aligned with the ones connected to the other side according to z axis. In a preferred embodiment, the shape of these aligned conductive tracks looks like a disk or an annular ring and four vias are used to connect two adjacent conductive layers. These four vias are symmetrically disposed on each of said conductive track. The position of the vias between a first and a second adjacent conductive layers and between a second and a third adjacent conductive layers forms an angle of 45° according to z axis.
Abstract:
A wiring substrate to which a semiconductor element 10 is connected, is a wiring substrate 20 comprised of a glass substrate with through-hole groups 20d, each group consisting of a plurality of through holes 20c extending from input surface 20a to output surface 20b and formed in a predetermined array, and conductive members 21 formed on respective inner walls of the through holes 20c in each through-hole group 20d so as to establish electrical continuity between input surface 20a and output surface 20b. A bump electrode 12 of semiconductor element 10 connected to the input surface 20a corresponds to each through-hole group 20d, conductive member 21, and conductive part 22 formed in a region covering the through-hole group 20d, and is connected so that a portion of the bump electrode 12 enters into an interior of each of the through holes 20c. This provides a semiconductor device in which good connection is made between the semiconductor element and the corresponding conduction path in the wiring substrate, and a radiation detector using it.
Abstract:
In a high-frequency module, intermediate ground electrodes (Go1, Gm1, Gg1, Go2, Gm2, Gg2) are provided between a common ground electrode (Gd) and upper-surface ground electrodes (Gq1, Gq2,) for mounting high-frequency components (21, 22) on an upper surface of a multilayer substrate. With regard to the number of via-hole conductors interconnecting ground electrodes, the number of via-hole conductors (Vdg) between the intermediate ground electrodes (Go1, Gm1, Gg1, Go2, Gm2, Gg2) and the common ground electrode (Gg) is larger than the number of via-hole conductors (Voq) between the upper-surface ground electrodes (Gq1, Gq2) and the intermediate ground electrodes (Go1, Gm1, Gg1, Go2, Gm2, Gg2).
Abstract:
Provided is a printed wiring board for a chip size scale package, which overcomes the poor adhesion of solder balls to a base material which poor adhesion is caused by a recent decrease in the size of the solder balls, and in the chip size scale package, the distortion of the printed wiring board is decreased and the distortion of a semiconductor plastic package formed by mounting a semiconductor chip on the printed wiring board by wire bonding or flip chip bonding is decreased. The printed wiring board has, as a substrate for a chip scale package, a double-side copper-clad laminate formed of an insulation layer and having copper foils on both surfaces, wherein the double-side copper-clad laminate has an upper copper foil surface and a lower copper foil surface, the upper copper foil surface has a wire bonding or flip chip bonding terminal and has a copper pad in a position where the copper pad can be electrically connected to said wire bonding or flip chip bonding terminal and can be connected to a blind via hole formed in the lower copper surface, the lower copper foil surface has a solder-balls-fixing pad in a position corresponding to said copper pad, the solder-balls-fixing pad has at least 2 blind via holes within itself, and the solder-balls-fixing pad connected to a reverse surface of the copper pad with a conductive material is electrically connected with solder balls which are melted and filled in blind via holes so as to be mounded.
Abstract:
Die Erfindung betrifft ein Verfahren zur Herstellung einer Lötverbindung eines Anschlußelements 9 mit einer auf einer Platine 1 vorgesehenen Kontaktstelle 5, 7 mit folgenden Schritten: a) Vorsehen einer ersten Kontaktstelle 5 auf der Unterseite der Platine 1 und einer zweiten Kontaktstelle 7 in gegenüberliegender Anordnung auf der Oberseite der Platine 1, b) Durchführen des Anschlußelements 9 durch einen die erste 5 und die zweite Kontaktstelle 7 durchgreifenden Durchbruch 6, so daß das freie Ende des Anschlußelements 9 über eine durch die erste Kontaktstelle 5 beschriebene Ebene hervorsteht und zwischen der Wand des Durchbruchs 6 und dem Anschlußelements 9 ein Ringspalt gebildet ist, und c) Aufbringen eines schmelzflüssigen Lots 12 auf das die erste Kontaktstelle 5 und das freie Ende des Anschlußelements 9, so daß das Lot 12 in den Ringspalt 11 eindringt und entlang des Anschlußelements 9 zur zweiten Kontaktstelle 7 fließt, und eine Lötverbindung zwischen der ersten 5 und der zweiten Kontaktstelle 7 und dem Anschlußelement 9 gebildet wird.