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公开(公告)号:TWI538112B
公开(公告)日:2016-06-11
申请号:TW102139711
申请日:2013-11-01
发明人: 廖宗仁 , LIAO, TSUNG JEN
IPC分类号: H01L23/12 , H01L23/495
CPC分类号: H01L25/105 , H01L23/3107 , H01L23/433 , H01L23/4952 , H01L23/49541 , H01L23/49555 , H01L23/49568 , H01L23/49582 , H01L24/16 , H01L24/81 , H01L25/50 , H01L2224/1191 , H01L2224/13147 , H01L2224/1626 , H01L2224/811 , H01L2224/8114 , H01L2224/81191 , H01L2224/81815 , H01L2224/81897 , H01L2224/81904 , H01L2224/81951 , H01L2225/1029 , H01L2225/1058 , H01L2924/12042 , H01L2924/00 , H01L2924/00012 , H01L2924/00014
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公开(公告)号:TWI538072B
公开(公告)日:2016-06-11
申请号:TW101103356
申请日:2012-02-02
申请人: 史達晶片有限公司 , STATS CHIPPAC, LTD.
发明人: 林耀劍 , LIN, YAOJIAN , 陳康 , CHEN, KANG
CPC分类号: H01L25/50 , H01L21/561 , H01L21/568 , H01L21/6835 , H01L23/3157 , H01L23/49816 , H01L23/49827 , H01L23/5389 , H01L23/552 , H01L24/04 , H01L24/11 , H01L24/16 , H01L24/81 , H01L24/82 , H01L24/96 , H01L24/97 , H01L25/0655 , H01L25/0657 , H01L25/074 , H01L25/105 , H01L2221/68345 , H01L2221/68381 , H01L2223/54426 , H01L2224/03002 , H01L2224/03003 , H01L2224/0401 , H01L2224/04105 , H01L2224/0557 , H01L2224/0613 , H01L2224/12105 , H01L2224/13014 , H01L2224/13021 , H01L2224/13025 , H01L2224/131 , H01L2224/13111 , H01L2224/13113 , H01L2224/13116 , H01L2224/13124 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/14104 , H01L2224/16111 , H01L2224/16145 , H01L2224/16237 , H01L2224/16238 , H01L2224/24137 , H01L2224/73253 , H01L2224/73267 , H01L2224/76155 , H01L2224/81191 , H01L2224/81193 , H01L2224/82005 , H01L2224/92 , H01L2224/94 , H01L2224/96 , H01L2224/97 , H01L2225/06513 , H01L2225/06541 , H01L2225/06544 , H01L2225/06548 , H01L2225/1035 , H01L2225/1058 , H01L2924/00014 , H01L2924/0002 , H01L2924/01004 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/09701 , H01L2924/12041 , H01L2924/12042 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/1433 , H01L2924/15311 , H01L2924/1532 , H01L2924/15321 , H01L2924/15331 , H01L2924/181 , H01L2924/1815 , H01L2924/18161 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/30105 , H01L2924/3025 , H01L2924/3511 , H01L2224/82 , H01L2224/11 , H01L2224/16225 , H01L2924/00 , H01L2924/00012 , H01L2224/05552 , H01L2224/13015 , H01L2224/81
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公开(公告)号:TW201620091A
公开(公告)日:2016-06-01
申请号:TW104126062
申请日:2015-08-11
申请人: 艾馬克科技公司 , AMKOR TECHNOLOGY, INC.
发明人: 杜旺朱 , DO, WON CHUL , 朴錦和 , PARK, JIN HEE
CPC分类号: H01L24/81 , H01L21/563 , H01L23/49827 , H01L2224/16227 , H01L2224/32225 , H01L2224/73204 , H01L2224/81191 , H01L2224/81815 , H01L2224/92125 , H01L2924/15311 , H01L2924/3511 , H05K3/3436 , H05K2201/09136 , H05K2201/10378 , H05K2201/10674 , H05K2201/10977 , H05K2203/047 , H05K2203/1476 , Y02P70/613
摘要: 一種製造半導體裝置的方法,舉例而言是利用元件堆疊而形成。舉非限制性範例來說,本揭示的多樣方面提供減少堆疊半導體裝置中之彎翹和/或應力的方法。
简体摘要: 一种制造半导体设备的方法,举例而言是利用组件堆栈而形成。举非限制性范例来说,本揭示的多样方面提供减少堆栈半导体设备中之弯翘和/或应力的方法。
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公开(公告)号:TWI534971B
公开(公告)日:2016-05-21
申请号:TW102111094
申请日:2013-03-28
发明人: 陳憲偉 , CHEN, HSIEN WEI , 陳英儒 , CHEN, YING JU , 于宗源 , YU, TSUNG YUAN , 陳玉芬 , CHEN, YU FENG , 王宗鼎 , WANG, TSUNG DING
IPC分类号: H01L23/488 , H01L21/60
CPC分类号: H01L24/06 , H01L24/05 , H01L24/13 , H01L24/16 , H01L2224/0401 , H01L2224/05008 , H01L2224/05541 , H01L2224/05548 , H01L2224/05552 , H01L2224/05567 , H01L2224/05569 , H01L2224/05572 , H01L2224/05644 , H01L2224/0603 , H01L2224/06131 , H01L2224/06133 , H01L2224/06179 , H01L2224/1134 , H01L2224/13005 , H01L2224/13022 , H01L2224/131 , H01L2224/13111 , H01L2224/13144 , H01L2224/13147 , H01L2224/13166 , H01L2224/13181 , H01L2224/16145 , H01L2224/16238 , H01L2224/81191 , H01L2924/00014 , H01L2924/10253 , H01L2924/1306 , H01L2924/014 , H01L2924/00 , H01L2924/207 , H01L2924/206
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公开(公告)号:TWI532110B
公开(公告)日:2016-05-01
申请号:TW101132466
申请日:2012-09-06
发明人: 沈更新 , SHEN, GENG HSIN
IPC分类号: H01L21/60 , H01L23/488
CPC分类号: H01L24/11 , H01L23/3114 , H01L23/3121 , H01L24/13 , H01L24/16 , H01L24/81 , H01L2224/034 , H01L2224/036 , H01L2224/0401 , H01L2224/05572 , H01L2224/056 , H01L2224/11005 , H01L2224/111 , H01L2224/11334 , H01L2224/11462 , H01L2224/11849 , H01L2224/13022 , H01L2224/1308 , H01L2224/13082 , H01L2224/13144 , H01L2224/13147 , H01L2224/13541 , H01L2224/16237 , H01L2224/73204 , H01L2224/81191 , H01L2224/814 , H01L2224/83104 , H01L2924/00014 , H01L2924/014 , H01L2924/00012 , H01L2924/206 , H01L2224/05552
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公开(公告)号:TWI529830B
公开(公告)日:2016-04-11
申请号:TW102129623
申请日:2013-08-19
发明人: 陳冠宇 , CHEN, GUAN YU , 林育蔚 , LIN, YU WEI , 曾裕仁 , TSENG, YU JEN , 郭庭豪 , KUO, TIN HAO , 陳承先 , CHEN, CHEN SHIEN
IPC分类号: H01L21/60
CPC分类号: H01L24/02 , H01L21/4853 , H01L21/76885 , H01L23/49811 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/14 , H01L24/16 , H01L24/81 , H01L25/0657 , H01L25/50 , H01L2224/02125 , H01L2224/02141 , H01L2224/02145 , H01L2224/0215 , H01L2224/0401 , H01L2224/05114 , H01L2224/05124 , H01L2224/05147 , H01L2224/05155 , H01L2224/05647 , H01L2224/10125 , H01L2224/11013 , H01L2224/11019 , H01L2224/1112 , H01L2224/11462 , H01L2224/11472 , H01L2224/13012 , H01L2224/13015 , H01L2224/13017 , H01L2224/13023 , H01L2224/13026 , H01L2224/1308 , H01L2224/13082 , H01L2224/13083 , H01L2224/13111 , H01L2224/13116 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13164 , H01L2224/13166 , H01L2224/13551 , H01L2224/13564 , H01L2224/13565 , H01L2224/1357 , H01L2224/13582 , H01L2224/136 , H01L2224/13686 , H01L2224/1369 , H01L2224/14051 , H01L2224/16148 , H01L2224/16227 , H01L2224/16238 , H01L2224/16503 , H01L2224/81007 , H01L2224/81143 , H01L2224/81191 , H01L2224/81203 , H01L2224/81424 , H01L2224/81439 , H01L2224/81444 , H01L2224/81447 , H01L2224/8181 , H01L2224/81895 , H01L2224/8192 , H01L2224/81948 , H01L2225/06513 , H01L2924/04941 , H01L2924/07025 , H01L2924/181 , H01L2924/301 , H01L2924/35 , Y10T29/49144 , H01L2924/00014 , H01L2924/014 , H01L2924/05432 , H01L2924/053 , H01L2924/00 , H01L2924/00012
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公开(公告)号:TWI528515B
公开(公告)日:2016-04-01
申请号:TW100102446
申请日:2011-01-24
申请人: 史達晶片有限公司 , STATS CHIPPAC, LTD.
发明人: 潘斯 拉簡德拉D , PENDSE, RAJENDRA D.
IPC分类号: H01L23/488 , H01L23/52 , H01L21/60
CPC分类号: H01L24/17 , H01L21/56 , H01L21/563 , H01L21/768 , H01L23/3128 , H01L23/49838 , H01L23/50 , H01L23/528 , H01L24/03 , H01L24/09 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/48 , H01L24/73 , H01L24/81 , H01L2224/0401 , H01L2224/09133 , H01L2224/09135 , H01L2224/11 , H01L2224/1134 , H01L2224/13 , H01L2224/13016 , H01L2224/13018 , H01L2224/13019 , H01L2224/1308 , H01L2224/13082 , H01L2224/131 , H01L2224/13111 , H01L2224/13116 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/16 , H01L2224/16225 , H01L2224/16227 , H01L2224/16235 , H01L2224/16237 , H01L2224/17133 , H01L2224/27013 , H01L2224/274 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/48105 , H01L2224/48157 , H01L2224/48158 , H01L2224/4816 , H01L2224/48227 , H01L2224/73203 , H01L2224/73204 , H01L2224/73265 , H01L2224/81191 , H01L2224/812 , H01L2224/81385 , H01L2224/81801 , H01L2224/94 , H01L2924/00013 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/12041 , H01L2924/12042 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/1433 , H01L2924/15311 , H01L2924/15787 , H01L2924/181 , H01L2924/19041 , H01L2924/3011 , H01L2924/3025 , H01L2224/13099 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
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公开(公告)号:TWI527134B
公开(公告)日:2016-03-21
申请号:TW099123084
申请日:2010-07-14
发明人: 前島研三 , MAEJIMA, KENZOU , 桂山悟 , KATSURAYAMA, SATORU , 和布浦徹 , MEURA, TORU
CPC分类号: C09D163/00 , H01L21/563 , H01L24/13 , H01L24/29 , H01L24/81 , H01L24/83 , H01L2224/131 , H01L2224/16225 , H01L2224/2919 , H01L2224/32225 , H01L2224/73203 , H01L2224/73204 , H01L2224/81091 , H01L2224/81093 , H01L2224/81097 , H01L2224/81121 , H01L2224/81191 , H01L2224/81193 , H01L2224/81204 , H01L2224/81209 , H01L2224/81211 , H01L2224/81815 , H01L2224/83192 , H01L2224/83193 , H01L2224/8349 , H01L2224/83862 , H01L2224/92125 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01045 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/00014 , H01L2924/01014 , H01L2924/00 , H01L2924/3512
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公开(公告)号:TW201611186A
公开(公告)日:2016-03-16
申请号:TW104129281
申请日:2015-09-04
申请人: 吉帝偉士股份有限公司 , J-DEVICES CORPORATION
发明人: 松原寬明 , MATSUBARA, HIROAKI , 近井智哉 , CHIKAI, TOMOSHIGE , 石堂仁則 , ISHIDO, KIMINORI , 中村卓 , NAKAMURA, TAKASHI , 本多広一 , HONDA, HIROKAZU , 出町浩 , DEMACHI, HIROSHI , 熊谷欣一 , KUMAGAYA, YOSHIKAZU , 作元祥太朗 , SAKUMOTO, SHOTARO , 渡邉真司 , WATANABE, SHINJI , 細山田澄和 , HOSOYAMADA, SUMIKAZU , 中村慎吾 , NAKAMURA, SHINGO , 宮腰武 , MIYAKOSHI, TAKESHI , 岩崎俊寬 , IWASAKI, TOSHIHIRO , 玉川道昭 , TAMAKAWA, MICHIAKI
IPC分类号: H01L21/768 , H01L23/498 , H01L23/28 , H01L21/304
CPC分类号: H01L24/96 , H01L21/3043 , H01L21/56 , H01L21/561 , H01L21/565 , H01L21/78 , H01L23/3114 , H01L23/3128 , H01L23/562 , H01L24/19 , H01L24/20 , H01L24/81 , H01L24/94 , H01L24/97 , H01L2224/04105 , H01L2224/12105 , H01L2224/16145 , H01L2224/16227 , H01L2224/18 , H01L2224/2518 , H01L2224/32145 , H01L2224/32225 , H01L2224/73204 , H01L2224/73209 , H01L2224/73253 , H01L2224/73259 , H01L2224/81191 , H01L2224/81203 , H01L2224/8203 , H01L2224/92124 , H01L2224/92224 , H01L2224/94 , H01L2224/97 , H01L2924/18161 , H01L2924/18162 , H01L2924/3511 , H01L2924/3512 , H01L2224/03 , H01L2224/81 , H01L2224/83 , H01L2924/00 , H01L2924/00014
摘要: 提供一種半導體裝置之製造方法以抑制晶片破裂及凸狀電極連接不良且提升良率及信賴性,包含以下步驟。經由凸狀電極電性連接半導體晶片及半導體晶圓。連接前或後,於二者間隙形成第一絕緣樹脂層。於半導體晶圓上形成第二絕緣樹脂層以掩埋半導體晶片。研磨第二絕緣樹脂層及半導體晶片至半導體晶片成為指定厚度。第二絕緣樹脂層上及半導體晶片上形成第一絕緣層,且於第一絕緣層及第二絕緣樹脂層形成露出電極之開口部。導電性材料埋設於開口部。於第一絕緣層上形成配線連接導電性材料。形成第一端子電性連接配線。研磨半導體晶圓達到完成厚度。
简体摘要: 提供一种半导体设备之制造方法以抑制芯片破裂及凸状电极连接不良且提升良率及信赖性,包含以下步骤。经由凸状电极电性连接半导体芯片及半导体晶圆。连接前或后,于二者间隙形成第一绝缘树脂层。于半导体晶圆上形成第二绝缘树脂层以掩埋半导体芯片。研磨第二绝缘树脂层及半导体芯片至半导体芯片成为指定厚度。第二绝缘树脂层上及半导体芯片上形成第一绝缘层,且于第一绝缘层及第二绝缘树脂层形成露出电极之开口部。导电性材料埋设于开口部。于第一绝缘层上形成配线连接导电性材料。形成第一端子电性连接配线。研磨半导体晶圆达到完成厚度。
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公开(公告)号:TW201611134A
公开(公告)日:2016-03-16
申请号:TW104126411
申请日:2015-08-13
发明人: 林彥良 , LIN, YENLIANG , 黃昶嘉 , HUANG, CHANGCHIA , 郭庭豪 , KUO, TINHAO , 吳勝郁 , WU, SHENGYU , 陳承先 , CHEN, CHENSHIEN
CPC分类号: H01L2224/16237 , H01L2224/73204 , H01L2224/81191
摘要: 提供第一基板附著至第二基板之方法及裝置。在一些實施方式中,第一基板具有保護層,如焊罩(solder mask),其圍繞第二基板所附著之晶粒附著區域(die attach area)。排除區域(keep-out region)(例如第二基板與保護層間之區域)為一個區域圍繞未形成或移除保護層之第二基板。排除區域的尺寸大小使第二基板與保護層間存在足夠的間隔,以放置底部填膠(underfill)於第一基板與第二基板之間,同時降低或避免空隙,且同時允許排除區域中之導線藉由底部填膠而覆蓋。
简体摘要: 提供第一基板附着至第二基板之方法及设备。在一些实施方式中,第一基板具有保护层,如焊罩(solder mask),其围绕第二基板所附着之晶粒附着区域(die attach area)。排除区域(keep-out region)(例如第二基板与保护层间之区域)为一个区域围绕未形成或移除保护层之第二基板。排除区域的尺寸大小使第二基板与保护层间存在足够的间隔,以放置底部填胶(underfill)于第一基板与第二基板之间,同时降低或避免空隙,且同时允许排除区域中之导线借由底部填胶而覆盖。
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