Abstract:
A method for attaching a handler to a wafer, the wafer comprising an integrated circuit (IC), includes forming a layer of an adhesive on the wafer, the adhesive comprising a polyimide-based polymer configured to withstand processing at a temperature of over about 280° C.; and adhering a handler to the wafer using the layer of adhesive. A system for attaching a handler to a wafer, the wafer comprising IC, includes a layer of an adhesive located on the wafer, the adhesive comprising a polyimide-based polymer configured to withstand processing at a temperature of over about 280° C.; and a handler adhered to the wafer using the layer of adhesive.
Abstract:
A system, method, and apparatus for injection molding conductive bonding material into a plurality of cavities in a surface are disclosed. The method comprises aligning a fill head with a surface. The mold includes a plurality of cavities. The method further includes placing the fill head in substantial contact with the surface. At least a first gas is channeled about a first region of the fill head. The at least first gas has a temperature above a melting point of conductive bonding material residing in a reservoir thereby maintaining the conductive bonding material in a molten state. The conductive bonding material is forced out of the fill head toward the surface. The conductive bonding material is provided into at least one cavity of the plurality of cavities contemporaneous with the at least one cavity being in proximity to the fill head.
Abstract:
A system, method, and device for applying conductive bonding material to a substrate are disclosed. The method includes providing conductive bonding material in a plurality of cavities of a mold. A total number of cavities in the plurality of cavities being greater than a total number of at least one conductive pad of a circuit supporting substrate corresponding to the mold. The conductive bonding material in the mold is heated to a reflow temperature of the conductive bonding material. At least one wettable surface is placed in substantial contact with the heated conductive bonding material in at least one cavity. The mold and the corresponding circuit supporting substrate are brought in close proximity to each other such that the heated conductive bonding material in at least one cavity comes in contact with at least one conductive pad of the corresponding circuit supporting substrate.
Abstract:
A physically secure processing assembly is provided that includes dies mounted on a substrate so as to sandwich the electrical contacts of the dies between the dies and the substrate. The substrate is provided with substrate contacts and conductive pathways that are electrically coupled to the die contacts and extend through the substrate. Electrical conductors surround the conductive pathways. A monitoring circuit detects a break in continuity of one or more of the electrical conductors, and preferably renders the assembly inoperable. Preferably, an epoxy encapsulation is provided to prevent probing tools from being able to reach the die or substrate contacts.
Abstract:
Disclosed is a laminated (or non-laminated) conductive interconnection for joining an integrated circuit device to a device carrier, where the conductive interconnection comprises alternating metal layers and polymer layers. In addition, the polymer can include dendrites, metal projections from the carrier or device, and/or micelle brushes on the outer portion of the polymer. The polymer layers include metal particles and the alternating metal layers and polymer layers form either a cube-shaped structure or a cylinder-shaped structure.
Abstract:
Apparatus and methods are provided for constructing balanced semiconductor chip package structures that minimize bowing, in-plane strain and/or other thermally induced mechanical strains that may arise during thermal cycling, to thus prevent structural damage to chip package structures.
Abstract:
A method for releasing a handler from a wafer, the wafer comprising an integrated circuit (IC), includes attaching the handler to the wafer using an adhesive comprising a thermoset polymer, the handler comprising a material that is transparent in a wavelength range of about 193 nanometers (nm) to about 400 nm; ablating the adhesive through the handler using a laser, wherein a wavelength of the laser is selected based on the transparency of the handler material; and separating the handler from the wafer.
Abstract:
A method for releasing a handler from a wafer, the wafer comprising an integrated circuit (IC) includes attaching the handler to the wafer using an adhesive comprising a polymer; performing edge processing to remove an excess portion of the adhesive from an edge of the handler and wafer; ablating the adhesive through the handler using a laser, wherein a wavelength of the laser is selected based on the transparency of the handler material; and separating the handler from the wafer. A system for releasing a handler from a wafer, the wafer comprising an IC includes a handler attached to a wafer using an adhesive comprising a polymer; an edge processing module, the edge processing module configured to remove an excess portion of the adhesive from the edge of the handler and wafer; and a laser, the laser configured to ablate the adhesive through the handler.
Abstract:
Techniques for electronic device fabrication are provided. In one aspect, an electronic device is provided. The electronic device comprises at least one interposer structure having one or mote vias and a plurality of decoupling capacitors integrated therein, the at least one interposer structure being configured to allow for one or more of the plurality of decoupling capacitors to be selectively deactivated. In another aspect, a method of fabricating an electronic device comprising at least one interposer structure having one or more vias and a plurality of decoupling capacitors integrated therein comprises the following step. One or more of the plurality of decoupling capacitors are selectively deactivated
Abstract:
Under the present invention, a semiconductor chip is electrically connected to a substrate (e.g., organic, ceramic, etc.) by an interposer structure. The interposer structure comprises an elastomeric, compliant material that includes metallurgic through connections having a predetermined shape. In a typical embodiment, the metallurgical through connections electrically connect an under bump metallization of the semiconductor chip to a top surface metallization of the substrate. By utilizing the interposer structure in accordance with the present invention, the problems associated with previous semiconductor module designs are alleviated.