High-speed semiconductor modules
    6.
    发明授权

    公开(公告)号:US10522506B2

    公开(公告)日:2019-12-31

    申请号:US15264579

    申请日:2016-09-13

    Abstract: A semiconductor module, comprising: a module substrate with an electric connection element; at least one semiconductor package provided on the module substrate, the at least one semiconductor package including a plurality of semiconductor chips; and a connection region electrically connecting the semiconductor package to the module substrate, wherein the connection region comprises: a first region electrically connected between data signal terminals of a first chip of the semiconductor chips of the semiconductor package and the module substrate; a second region electrically connected between data signal terminals of a second chip of the semiconductor chips of the semiconductor package and the module substrate; and a third region electrically connected between command/address signal terminals of both the first and second chips of the semiconductor package and the module substrate, wherein the first region is closer to the electric connection element of the module substrate, compared with the third region.

    HIGH-SPEED SEMICONDUCTOR MODULES
    7.
    发明申请

    公开(公告)号:US20170179079A1

    公开(公告)日:2017-06-22

    申请号:US15264579

    申请日:2016-09-13

    Abstract: A semiconductor module, comprising: a module substrate with an electric connection element; at least one semiconductor package provided on the module substrate, the at least one semiconductor package including a plurality of semiconductor chips; and a connection region electrically connecting the semiconductor package to the module substrate, wherein the connection region comprises: a first region electrically connected between data signal terminals of a first chip of the semiconductor chips of the semiconductor package and the module substrate; a second region electrically connected between data signal terminals of a second chip of the semiconductor chips of the semiconductor package and the module substrate; and a third region electrically connected between command/address signal terminals of both the first and second chips of the semiconductor package and the module substrate, wherein the first region is closer to the electric connection element of the module substrate, compared with the third region.

    Semiconductor chip package including voltage generation circuit with reduced power noise
    10.
    发明授权
    Semiconductor chip package including voltage generation circuit with reduced power noise 有权
    半导体芯片封装包括具有降低功耗噪声的电压发生电路

    公开(公告)号:US08933747B2

    公开(公告)日:2015-01-13

    申请号:US13617802

    申请日:2012-09-14

    CPC classification number: H01L23/642 G11C11/4074 H01L2924/0002 H01L2924/00

    Abstract: A semiconductor chip package eliminates and minimizes a power noise generated from a voltage generation circuit in the semiconductor chip package includes an integrated circuit chip with a voltage generation circuit that receives an external voltage to generate a supply voltage to be used in an internal circuit and a connection terminal connected to an output node of the voltage generation circuit, and a mounting substrate including a noise eliminator electrically connected to the connection terminal to reduce a power noise of the supply voltage and a mounting substrate to mount the integrated circuit chip to package the integrated circuit chip as the semiconductor chip package.

    Abstract translation: 半导体芯片封装消除并最小化半导体芯片封装中的电压产生电路产生的功率噪声包括具有接收外部电压以产生要用于内部电路的电源电压的电压产生电路的集成电路芯片,以及 连接端子连接到电压产生电路的输出节点,以及安装基板,包括电连接到连接端子的噪声消除器,以降低电源电压的功率噪声,以及安装基板以安装集成电路芯片以封装集成 电路芯片作为半导体芯片封装。

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