公开(公告)号：US20200295258A1

公开(公告)日：2020-09-17

申请号：US16890505

申请日：2020-06-02

Applicant: FUJIFILM CORPORATION

Inventor： Keeyoung PARK ,  Atsushi MIZUTANI

IPC: H01L43/12 ,  H01L21/3065 ,  H01L21/308 ,  H01L43/08 ,  H01L27/105 ,  C23F1/40 ,  C23F4/00 ,  C23F1/30

Abstract: A treatment liquid contains orthoperiodic acid and water, and the pH is 11 or more. It is preferable that the content of orthoperiodic acid in the treatment liquid is 0.01% to 5% by mass with respect to the total mass of the treatment liquid.

公开(公告)号：US20180122628A1

公开(公告)日：2018-05-03

申请号：US15854778

申请日：2017-12-27

Applicant: FUJIFILM Corporation

Inventor： Atsushi MIZUTANI ,  Tadashi INABA

IPC: H01L21/02 ,  B08B3/08 ,  C08K3/16 ,  C08K5/17

Abstract: Provided are a method for treating a pattern structure which is capable of inhibiting collapse of a pattern structure, a method for manufacturing an electronic device including such a treatment method, and a treatment liquid for inhibiting collapse of a pattern structure. The method for treating a pattern structure includes applying a treatment liquid containing a fluorine-based polymer having a repeating unit containing a fluorine atom to a pattern structure formed of an inorganic material.

公开(公告)号：US20160056054A1

公开(公告)日：2016-02-25

申请号：US14927798

申请日：2015-10-30

Applicant: FUJIFILM Corporation

Inventor： Satomi TAKAHASHI ,  Tetsuya KAMIMURA ,  Akiko KOYAMA ,  Atsushi MIZUTANI ,  Yasuo SUGISHIMA ,  Satoru MURAYAMA

IPC: H01L21/3213 ,  H01L21/285 ,  C23F1/44 ,  C23F1/30 ,  C23F1/26 ,  H01L21/324 ,  H01L21/02

CPC classification number: H01L21/32134 ,  C23F1/26 ,  C23F1/28 ,  C23F1/30 ,  C23F1/44 ,  H01L21/02068 ,  H01L21/28088 ,  H01L21/28518 ,  H01L21/324 ,  H01L21/823842 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/665 ,  H01L29/66545 ,  H01L29/66575

Abstract: There is provided an etching method of a semiconductor substrate that includes a first layer containing germanium (Ge) and a second layer containing at least one metal element selected from nickel platinum (NiPt), titanium (Ti), nickel (Ni), and cobalt (Co), the method including: bringing an etching liquid which contains a specific acid compound into contact with the second layer and selectively removing the second layer.

Abstract translation: 提供一种半导体衬底的蚀刻方法，其包括含有锗（Ge）的第一层和包含至少一种选自镍铂（NiPt），钛（Ti），镍（Ni）和钴的金属元素的第二层） （Co），该方法包括：使包含特定酸化合物的蚀刻液与第二层接触并选择性地除去第二层。

公开(公告)号：US20150179471A1

公开(公告)日：2015-06-25

申请号：US14624860

申请日：2015-02-18

Applicant: FUJIFILM Corporation

Inventor： Atsushi MIZUTANI ,  Akiko YOSHII ,  Tetsuya KAMIMURA ,  Tetsuya SHIMIZU

IPC: H01L21/311 ,  H01L21/28

CPC classification number: H01L21/31111 ,  C09K13/08 ,  H01L21/28158 ,  H01L21/30604

Abstract: A method of producing a semiconductor substrate product, having the steps of: providing an etching liquid containing water, a hydrofluoric acid compound, and a water-soluble polymer; and applying the etching liquid to a semiconductor substrate, the semiconductor substrate having a silicon layer and a silicon oxide layer, the silicon layer containing an impurity, and thereby selectively etching the silicon oxide layer.

Abstract translation: 一种制造半导体衬底产品的方法，具有以下步骤：提供含有水，氢氟酸化合物和水溶性聚合物的蚀刻液; 并且将蚀刻液施加到半导体衬底，所述半导体衬底具有硅层和氧化硅层，所述硅层含有杂质，从而选择性地蚀刻氧化硅层。

公开(公告)号：US20140332713A1

公开(公告)日：2014-11-13

申请号：US14337301

申请日：2014-07-22

Applicant: FUJIFILM Corporation

Inventor： Atsushi MIZUTANI ,  Hisamitsu TOMEBA ,  Kazutaka TAKAHASHI ,  Tadashi INABA

IPC: C23F1/26 ,  H05K3/06

CPC classification number: C23F1/26 ,  C23F1/44 ,  H01L21/32134 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L2224/0345 ,  H01L2224/0346 ,  H01L2224/03614 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05027 ,  H01L2224/05082 ,  H01L2224/05166 ,  H01L2224/05559 ,  H01L2224/05572 ,  H01L2224/05647 ,  H01L2224/13082 ,  H01L2224/13111 ,  H01L2224/13155 ,  H01L2924/00014 ,  H01L2924/12041 ,  H05K3/067 ,  H05K3/108 ,  H01L2924/01074 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/01082 ,  H01L2924/00 ,  H01L2224/05552

Abstract: An etching method having the step of: applying an etching liquid to a substrate, the etching liquid containing: a fluorine ion, a nitrogen-containing compound having at least 2 of nitrogen-containing structural units, and water, the etching liquid having a pH of being adjusted to 5 or less; and etching a titanium compound in the substrate.

Abstract translation: 一种蚀刻方法，具有以下步骤：向基板施加蚀刻液，所述蚀刻液含有氟离子，至少含有2个含氮结构单元的含氮化合物和水，所述蚀刻液具有pH 调整为5以下; 并在基板中蚀刻钛化合物。

公开(公告)号：US20230402275A1

公开(公告)日：2023-12-14

申请号：US18452311

申请日：2023-08-18

Applicant: FUJIFILM Corporation

Inventor： Atsushi MIZUTANI

IPC: H01L21/02 ,  H01L21/311

CPC classification number: H01L21/02052 ,  H01L21/02063 ,  H01L21/31116 ,  H01L21/02068

Abstract: An object of the present invention is to provide a washing solution for a semiconductor device, the washing solution being excellent in the dissolution suppressing performance with respect to a metal layer containing tungsten and also being excellent in the washing performance of a dry etching residue. Another object of the present invention is to provide a washing method for a semiconductor substrate.
The washing solution for a semiconductor device according to the present invention is a washing solution for a semiconductor device, containing one or more hydroxylamine compounds one selected from the group consisting of hydroxylamine and a hydroxylamine salt, a predetermined component A represented by Formula (1) described later, and water, in which a mass ratio of a content of the hydroxylamine compound to a content of the component A is 5 to 200.

公开(公告)号：US20230212485A1

公开(公告)日：2023-07-06

申请号：US18158544

申请日：2023-01-24

Applicant: FUJIFILM Corporation

Inventor： Yasuo SUGISHIMA ,  Atsushi MIZUTANI

IPC: C11D7/50 ,  C11D11/00 ,  C11D7/24 ,  C11D7/26 ,  C11D7/32 ,  H01L21/02

CPC classification number: C11D7/5022 ,  C11D7/244 ,  C11D7/261 ,  C11D7/267 ,  C11D7/3209 ,  C11D7/3218 ,  C11D11/0047 ,  H01L21/02057

Abstract: An object of the present invention is to provide a treatment liquid for a semiconductor device, which is excellent in removal performance for residues present on a substrate, and to provide a substrate washing method using the treatment liquid.
The treatment liquid of the present invention is a treatment liquid for a semiconductor device, which includes water, a basic compound, hexylene glycol, and a compound A that is at least one kind selected from the group consisting of isobutene, (E)-2-methyl-1,3-pentadiene, 4-methyl-1,3-pentadiene, 2,2,4-trimethyloxetane, 4-methyl-3-penten-2-ol, and 2,4,4,6-tetramethyl-1,3-dioxane.

公开(公告)号：US20230160072A1

公开(公告)日：2023-05-25

申请号：US18158061

申请日：2023-01-23

Applicant: FUJIFILM Corporation

Inventor： Atsushi MIZUTANI

IPC: C23F1/30

CPC classification number: C23F1/30

Abstract: The present invention provides a chemical liquid that has an excellent ruthenium dissolving ability and leaves small amounts of residual ruthenium and sodium, a chemical liquid container, and a method for treating a substrate. The chemical liquid according to an embodiment of the present invention is a chemical liquid used for removing a ruthenium-containing substance on a substrate. The chemical liquid contains hypochlorous acid or a salt thereof and bromic acid or a salt thereof, in which a content of the hypochlorous acid or a salt thereof is 0.1% to 9.0% by mass with respect to a total mass of the chemical liquid, and a content of the bromic acid or a salt thereof is 0.001 to 15.0 ppm by mass with respect to the total mass of the chemical liquid.

公开(公告)号：US20220393104A1

公开(公告)日：2022-12-08

申请号：US17820056

申请日：2022-08-16

Applicant: FUJIFILM CORPORATION

Inventor： Keeyoung PARK ,  Atsushi MIZUTANI

IPC: H01L43/12 ,  H01L21/3065 ,  H01L21/308 ,  H01L43/08 ,  H01L27/105 ,  C23F1/40 ,  C23F4/00 ,  C23F1/30

Abstract: A treatment liquid contains orthoperiodic acid and water, and the pH is 11 or more. It is preferable that the content of orthoperiodic acid in the treatment liquid is 0.01% to 5% by mass with respect to the total mass of the treatment liquid.

公开(公告)号：US20190148634A1

公开(公告)日：2019-05-16

申请号：US16245570

申请日：2019-01-11

Applicant: FUJIFILM CORPORATION

Inventor： Keeyoung PARK ,  Atsushi MIZUTANI

IPC: H01L43/12 ,  C23F1/40 ,  C23F4/00 ,  H01L27/105 ,  C23F1/30 ,  H01L21/308 ,  H01L21/3065 ,  H01L43/08

Abstract: An object is to provide a ruthenium removal composition capable of dissolving Ru while suppressing dissolution of CoFeB, and a method of producing a magnetoresistive random access memory (MRAM) using the same. A ruthenium removal composition of the present invention contains orthoperiodic acid and water, and the pH is 11 or more. It is preferable that the content of orthoperiodic acid in the ruthenium removal composition is 0.01% to 5% by mass with respect to the total mass of the composition.