公开(公告)号：US07298022B2

公开(公告)日：2007-11-20

申请号：US11075881

申请日：2005-03-10

申请人： Tetsuo Fujii ,  Tsuyoshi Fukada ,  Kenichi Ao

发明人： Tetsuo Fujii ,  Tsuyoshi Fukada ,  Kenichi Ao

IPC分类号： H01L23/544

CPC分类号： H01L21/6836 ,  B29C33/0022 ,  B29C2043/023 ,  B81C1/00888 ,  B81C1/00896 ,  B81C2201/053 ,  H01L2221/68327 ,  H01L2224/16 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48095 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2924/01057 ,  H01L2924/01068 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/16235 ,  H01L2924/30105 ,  H01L2924/00 ,  H01L2924/00014

摘要： A protective sheet is fixed to a jig, and regions of the protective sheet corresponding to regions where dicing-cut is to be performed are removed to form grooves. Then, a semiconductor wafer is bonded to the protective sheet at an opposite side of the jig, and the jig is detached from the protective sheet and the semiconductor wafer bonded together. After that, the semiconductor wafer is cut into semiconductor chips by dicing along the grooves of the protective sheet. Because the protective sheet is not cut by dicing, no scraps of the protective sheet is produced, thereby preventing contamination to the chips.

摘要翻译： 将保护片固定在夹具上，除去对应于要进行切割的区域的保护片的区域，形成槽。 然后，在夹具的相反侧将半导体晶片接合到保护片，并将夹具与保护片和半导体晶片接合在一起。 之后，通过沿保护片的沟槽切割将半导体晶片切割成半导体芯片。 由于保护片不是通过切割而切割的，因此不会产生保护片的废料，从而防止对芯片的污染。

公开(公告)号：US06787866B2

公开(公告)日：2004-09-07

申请号：US10091497

申请日：2002-03-07

申请人： Tetsuo Fujii ,  Tsuyoshi Fukada ,  Kenichi Ao

发明人： Tetsuo Fujii ,  Tsuyoshi Fukada ,  Kenichi Ao

IPC分类号： H01L2984

CPC分类号： H01L21/6836 ,  B29C33/0022 ,  B29C2043/023 ,  B81C1/00888 ,  B81C1/00896 ,  B81C2201/053 ,  H01L2221/68327 ,  H01L2224/16 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48095 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2924/01057 ,  H01L2924/01068 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/16235 ,  H01L2924/30105 ,  H01L2924/00 ,  H01L2924/00014

摘要： A protective sheet is fixed to a jig, and regions of the protective sheet corresponding to regions where dicing-cut is to be performed are removed to form grooves. Then, a semiconductor wafer is bonded to the protective sheet at an opposite side of the jig, and the jig is detached from the protective sheet and the semiconductor wafer bonded together. After that, the semiconductor wafer is cut into semiconductor chips by dicing along the grooves of the protective sheet. Because the protective sheet is not cut by dicing, no scraps of the protective sheet is produced, thereby preventing contamination to the chips.

摘要翻译： 将保护片固定在夹具上，除去对应于要进行切割的区域的保护片的区域，形成槽。 然后，在夹具的相反侧将半导体晶片接合到保护片，并将夹具与保护片和半导体晶片接合在一起。 之后，通过沿保护片的沟槽切割将半导体晶片切割成半导体芯片。 由于保护片不是通过切割而切割的，所以不会产生保护片的废料，从而防止对芯片的污染。

公开(公告)号：US06429506B1

公开(公告)日：2002-08-06

申请号：US09525514

申请日：2000-03-15

申请人： Tetsuo Fujii ,  Tsuyoshi Fukada ,  Hiroshi Muto ,  Kenichi Ao ,  Shinji Yoshihara ,  Sumitomo Inomata

发明人： Tetsuo Fujii ,  Tsuyoshi Fukada ,  Hiroshi Muto ,  Kenichi Ao ,  Shinji Yoshihara ,  Sumitomo Inomata

IPC分类号： H01L21301

CPC分类号： H01L21/6836 ,  B29C33/0022 ,  B29C2043/023 ,  B81C1/00888 ,  B81C1/00896 ,  B81C2201/053 ,  H01L2221/68327 ,  H01L2224/16 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48095 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2924/01057 ,  H01L2924/01068 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/16235 ,  H01L2924/30105 ,  H01L2924/00 ,  H01L2924/00014

摘要： A protective sheet is fixed to a jig, and regions of the protective sheet corresponding to regions where dicing-cut is to be performed are removed to form grooves. Then, a semiconductor wafer is bonded to the protective sheet at an opposite side of the jig, and the jig is detached from the protective sheet and the semiconductor wafer bonded together. After that, the semiconductor wafer is cut into semiconductor chips by dicing along the grooves of the protective sheet. Because the protective sheet is not cut by dicing, no scraps of the protective sheet is produced, thereby preventing contamination to the chips.

摘要翻译： 将保护片固定在夹具上，除去对应于要进行切割的区域的保护片的区域，形成槽。 然后，在夹具的相反侧将半导体晶片接合到保护片，并将夹具与保护片和半导体晶片接合在一起。 之后，通过沿保护片的沟槽切割将半导体晶片切割成半导体芯片。 由于保护片不是通过切割而切割的，所以不会产生保护片的废料，从而防止对芯片的污染。

公开(公告)号：US20050156309A1

公开(公告)日：2005-07-21

申请号：US11075881

申请日：2005-03-10

申请人： Tetsuo Fujii ,  Tsuyoshi Fukada ,  Kenichi Ao

发明人： Tetsuo Fujii ,  Tsuyoshi Fukada ,  Kenichi Ao

IPC分类号： B81C1/00 ,  H01L21/301 ,  H01L21/68 ,  H01L21/48

CPC分类号： H01L21/6836 ,  B29C33/0022 ,  B29C2043/023 ,  B81C1/00888 ,  B81C1/00896 ,  B81C2201/053 ,  H01L2221/68327 ,  H01L2224/16 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48095 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2924/01057 ,  H01L2924/01068 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/16235 ,  H01L2924/30105 ,  H01L2924/00 ,  H01L2924/00014

摘要： A protective sheet is fixed to a jig, and regions of the protective sheet corresponding to regions where dicing-cut is to be performed are removed to form grooves. Then, a semiconductor wafer is bonded to the protective sheet at an opposite side of the jig, and the jig is detached from the protective sheet and the semiconductor wafer bonded together. After that, the semiconductor wafer is cut into semiconductor chips by dicing along the grooves of the protective sheet. Because the protective sheet is not cut by dicing, no scraps of the protective sheet is produced, thereby preventing contamination to the chips.

摘要翻译： 将保护片固定在夹具上，除去对应于要进行切割的区域的保护片的区域，形成槽。 然后，在夹具的相反侧将半导体晶片接合到保护片，并将夹具与保护片和半导体晶片接合在一起。 之后，通过沿保护片的沟槽切割将半导体晶片切割成半导体芯片。 由于保护片不是通过切割而切割的，所以不会产生保护片的废料，从而防止对芯片的污染。

公开(公告)号：US08829627B2

公开(公告)日：2014-09-09

申请号：US13479393

申请日：2012-05-24

申请人： Tetsuo Fujii ,  Keisuke Gotoh ,  Kenichi Ao

发明人： Tetsuo Fujii ,  Keisuke Gotoh ,  Kenichi Ao

IPC分类号： H01L29/84 ,  G01P1/02 ,  B60C23/04 ,  G01L9/00 ,  G01P15/08 ,  G01L19/00 ,  B81B7/02 ,  G01P15/125

CPC分类号： G01L9/0073 ,  B60C23/0488 ,  B81B7/02 ,  B81B2201/025 ,  B81B2207/015 ,  G01L9/0085 ,  G01L19/0092 ,  G01P1/023 ,  G01P15/08 ,  G01P15/125

摘要： A dynamic quantity sensor device includes: first and second dynamic quantity sensors having first and second dynamic quantity detecting units; and first and second substrates, which are bonded to each other to provide first and second spaces. The first and second units are air-tightly accommodated in the first and second spaces, respectively. A SOI layer of the first substrate is divided into multiple semiconductor regions by trenches. First and second parts of the semiconductor regions provide the first and second units, respectively. The second part includes: a second movable semiconductor region having a second movable electrode, which is provided by a sacrifice etching of the embedded oxide film; and a second fixed semiconductor region having a second fixed electrode. The second sensor detects the second dynamic quantity by measuring a capacitance between the second movable and fixed electrodes, which is changeable in accordance with the second dynamic quantity.

摘要翻译： 动态量传感器装置包括：具有第一和第二动态量检测单元的第一和第二动态量传感器; 以及彼此结合以提供第一和第二空间的第一和第二基板。 第一和第二单元分别气密地容纳在第一和第二空间中。 第一衬底的SOI层被沟槽分成多个半导体区域。 半导体区域的第一和第二部分分别提供第一和第二单元。 第二部分包括：具有第二可移动电极的第二可移动半导体区域，其通过对嵌入的氧化膜的牺牲蚀刻而提供; 以及具有第二固定电极的第二固定半导体区域。 第二传感器通过测量可根据第二动态量改变的第二可动电极和固定电极之间的电容来检测第二动态量。

公开(公告)号：US09341513B2

公开(公告)日：2016-05-17

申请号：US13570233

申请日：2012-08-08

申请人： Shunsuke Akasaka ,  Tetsuo Fujii ,  Koki Sakamoto

发明人： Shunsuke Akasaka ,  Tetsuo Fujii ,  Koki Sakamoto

IPC分类号： H01L31/0232 ,  G01J1/42 ,  G01J1/04 ,  H01L31/0203 ,  H01L31/0224 ,  H01L31/09

CPC分类号： G01J1/4204 ,  G01J1/0488 ,  G01J1/429 ,  H01L31/0203 ,  H01L31/0224 ,  H01L31/09

摘要： To provide both a photodetecting element and a photodetecting device which can prevent generating of a plurality of current paths, and can detect with stability and high sensitivity regardless of a surface state instability of an optical absorption layer. The photodetecting element includes an optically transparent substrate, an optical absorption layer, an electrode, an electrode, an adhesive layer, an insulating film, and a package. The optical absorption layer is formed on the optically transparent substrate, and a part of each the electrodes is embedded in the optical absorption layer. The photodetecting unit is bonded junction down with the adhesive layer on the package. The optical absorption layer absorbs light of a specified wavelength selectively to be converted into an electric signal. The light to be measured is irradiated from a back side surface of the optically transparent substrate.

摘要翻译： 为了提供可以防止多个电流路径的产生的光检测元件和光电检测器件，并且不管光吸收层的表面状态不稳定，都可以以稳定性和高灵敏度进行检测。 光检测元件包括光学透明基板，光吸收层，电极，电极，粘合剂层，绝缘膜和封装。 光学吸收层形成在光学透明基板上，并且每个电极的一部分嵌入在光吸收层中。 光电检测单元与封装上的粘合剂层接合结合。 光吸收层选择性地吸收特定波长的光以转换成电信号。 从光学透明基板的背面侧照射被测光。

公开(公告)号：US08759926B2

公开(公告)日：2014-06-24

申请号：US13033941

申请日：2011-02-24

申请人： Tetsuo Fujii ,  Keisuke Gotoh

发明人： Tetsuo Fujii ,  Keisuke Gotoh

IPC分类号： G11C11/15

CPC分类号： G01P15/0802 ,  B81B7/0006 ,  B81B2201/0235 ,  B81B2203/0307 ,  B81B2207/095 ,  G01P15/125 ,  G01P2015/0814 ,  G01P2015/0877 ,  G01P2015/088 ,  H01L2224/48463

摘要： In a semiconductor physical quantity sensor, a pattern portion including a wiring pattern as a wiring is formed on a surface of a first semiconductor substrate. A support substrate having a surface made of an electrically insulating material is prepared. The first semiconductor substrate is joined to the support substrate by bonding the pattern portion to the surface of the support substrate. Further, a sensor structure is formed in the first semiconductor substrate. The sensor structure is electrically connected to the wiring pattern. A cap is bonded to the first semiconductor substrate such that the sensor structure is hermetically sealed.

摘要翻译： 在半导体物理量传感器中，在第一半导体衬底的表面上形成包括布线图案作为布线的图案部分。 准备具有由电绝缘材料制成的表面的支撑基板。 第一半导体衬底通过将图案部分结合到支撑衬底的表面而与支撑衬底接合。 此外，在第一半导体衬底中形成传感器结构。 传感器结构电连接到布线图案。 将盖接合到第一半导体基板，使得传感器结构被气密密封。

公开(公告)号：US08455973B2

公开(公告)日：2013-06-04

申请号：US12902696

申请日：2010-10-12

申请人： Tetsuo Fujii ,  Masaya Tanaka ,  Keisuke Gotoh

发明人： Tetsuo Fujii ,  Masaya Tanaka ,  Keisuke Gotoh

IPC分类号： H01L21/00

CPC分类号： H01L21/76898 ,  G01P15/0802 ,  G01P15/125 ,  G01P2015/0877 ,  G01P2015/088 ,  H01L23/481 ,  H01L24/16 ,  H01L24/73 ,  H01L24/81 ,  H01L25/0655 ,  H01L25/16 ,  H01L2224/17181 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/73257 ,  H01L2224/80097 ,  H01L2224/80099 ,  H01L2224/80896 ,  H01L2224/81075 ,  H01L2224/81805 ,  H01L2224/81894 ,  H01L2224/83851 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01018 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01051 ,  H01L2924/01056 ,  H01L2924/01058 ,  H01L2924/01072 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/1461 ,  H01L2924/3025 ,  H01L2924/351 ,  H01L2224/29075 ,  H01L2924/00014 ,  H01L2924/00

摘要： A region divided substrate includes a substrate, a plurality of trenches, a conductive layer, and an insulating member. The substrate has a first surface and a second surface opposed to each other. The trenches penetrate the substrate from the first surface to the second surface and divide the substrate into a plurality of partial regions. The conductive layer is disposed on a sidewall of each of the trenches from a portion adjacent to the first surface to a portion adjacent to the second surface. The conductive layer has an electric conductivity higher than an electric conductivity of the substrate. The insulating member fills each of the trenches through the conductive layer.

摘要翻译： 区域分割衬底包括衬底，多个沟槽，导电层和绝缘构件。 基板具有彼此相对的第一表面和第二表面。 沟槽从第一表面穿过基板到第二表面，并将基板分成多个部分区域。 导电层设置在每个沟槽的侧壁上，从与第一表面相邻的部分到与第二表面相邻的部分。 导电层的导电率高于基板的电导率。 绝缘构件通过导电层填充每个沟槽。

公开(公告)号：US08413507B2

公开(公告)日：2013-04-09

申请号：US12801405

申请日：2010-06-08

申请人： Tetsuo Fujii ,  Hisanori Yokura ,  Hirofumi Higuchi

发明人： Tetsuo Fujii ,  Hisanori Yokura ,  Hirofumi Higuchi

IPC分类号： G01C19/56 ,  G01P15/125

CPC分类号： H01L27/1203 ,  B81B2201/025 ,  B81B2201/0257 ,  B81B2201/0285 ,  B81B2201/047 ,  B81C1/00182 ,  G01C19/5755 ,  G01P15/0802 ,  G01P15/125 ,  G01P2015/0814 ,  H01L21/84

摘要： A semiconductor dynamic quantity sensor has a substrate including a semiconductor substrate, an insulation layer on a main surface of the semiconductor substrate, and a semiconductor layer on the insulation layer. The main surface has a projection that is trapezoidal or triangular in cross section. The semiconductor layer is divided by a through hole into a movable portion. A tip of the projection is located directly below the movable portion and spaced from the movable portion by a predetermined distance in a thickness direction of the substrate. A width of the tip of the projection is less than a width of the movable portion in a planar direction of the substrate. The distance between the tip of the projection and the movable portion is equal to a thickness of the insulation layer.

摘要翻译： 半导体动态量传感器具有包括半导体衬底，半导体衬底的主表面上的绝缘层和绝缘层上的半导体层的衬底。 主表面具有横截面为梯形或三角形的突起。 半导体层由通孔分割成可动部。 突出部的尖端位于可动部的正下方，与基板的厚度方向与可动部隔开预定的距离。 突起的尖端的宽度小于基板的平面方向上的可动部的宽度。 突起的尖端和可动部之间的距离等于绝缘层的厚度。

公开(公告)号：US08390106B2

公开(公告)日：2013-03-05

申请号：US13076525

申请日：2011-03-31

申请人： Yukihiro Maeda ,  Kouji Kondoh ,  Yoshiharu Harada ,  Takeshi Yamauchi ,  Tetsuo Fujii

发明人： Yukihiro Maeda ,  Kouji Kondoh ,  Yoshiharu Harada ,  Takeshi Yamauchi ,  Tetsuo Fujii

IPC分类号： H01L23/02

CPC分类号： H05K3/4632 ,  H01L23/145 ,  H01L23/3128 ,  H01L23/367 ,  H01L23/3677 ,  H01L23/49894 ,  H01L23/5389 ,  H01L24/13 ,  H01L24/16 ,  H01L24/19 ,  H01L24/20 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L2224/05624 ,  H01L2224/1134 ,  H01L2224/13144 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/73259 ,  H01L2224/81203 ,  H01L2224/83192 ,  H01L2224/92224 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/351 ,  H05K1/0206 ,  H05K1/185 ,  H05K3/0061 ,  H05K2201/096 ,  H05K2201/10674 ,  H05K2203/063 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2224/8384 ,  H01L2924/00014

摘要： A circuit board includes an insulating member and a semiconductor chip encapsulated with the thermoplastic resin portion of the insulating member. A wiring member is located in the insulating member and electrically connected to first and second electrodes on respective sides of the semiconductor chip. The wiring member includes a pad, an interlayer connection member, and a connection portion. A diffusion layer is located between the first electrode and the connection portion, between the pad and the connection portion, and between the second electrode and the interlayer connection member. At least one element of the interlayer connection member has a melting point lower than a glass-transition point of the thermoplastic resin portion. The connection portion is made of material having a melting point higher than a melting point of the thermoplastic resin portion.

摘要翻译： 电路板包括绝缘构件和用绝缘构件的热塑性树脂部分封装的半导体芯片。 布线构件位于绝缘构件中并且电连接到半导体芯片的相应侧上的第一和第二电极。 布线构件包括垫，层间连接构件和连接部。 扩散层位于第一电极和连接部分之间，焊盘和连接部分之间，以及第二电极和层间连接部件之间。 层间连接部件的至少一个元件的熔点低于热塑性树脂部分的玻璃化转变点。 连接部由熔点高于热塑性树脂部分的熔点的材料制成。