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公开(公告)号：US08476759B2
公开(公告)日：2013-07-02
申请号：US13308249
申请日：2011-11-30
IPC分类号： H01L23/48
CPC分类号： H01L24/11 , H01L23/293 , H01L23/3192 , H01L24/03 , H01L24/05 , H01L24/13 , H01L2224/03462 , H01L2224/0401 , H01L2224/05005 , H01L2224/05022 , H01L2224/05086 , H01L2224/05091 , H01L2224/05124 , H01L2224/05541 , H01L2224/05572 , H01L2224/1145 , H01L2224/11462 , H01L2224/13022 , H01L2224/13111 , H01L2224/13147 , H01L2924/00014 , H01L2924/206 , H01L2924/01047 , H01L2924/01029 , H01L2924/00012 , H01L2224/05552
摘要： A structure comprises a top metal connector formed underneath a bond pad. The bond pad is enclosed by a first passivation layer and a second passivation layer. A polymer layer is further formed on the second passivation layer. The dimension of an opening in the first passivation layer is less than the dimension of the top metal connector. The dimension of the top metal connector is less than the dimensions of an opening in the second passivation layer and an opening in the polymer layer.
摘要翻译： 结构包括形成在接合焊盘下方的顶部金属连接器。 接合焊盘由第一钝化层和第二钝化层包围。 聚合物层进一步形成在第二钝化层上。 第一钝化层中的开口的尺寸小于顶部金属连接器的尺寸。 顶部金属连接器的尺寸小于第二钝化层中的开口的尺寸和聚合物层中的开口的尺寸。
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公开(公告)号：US20110101519A1
公开(公告)日：2011-05-05
申请号：US12842304
申请日：2010-07-23
IPC分类号： H01L23/498
CPC分类号： H01L23/49827 , H01L23/49816 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/81 , H01L2224/0401 , H01L2224/05022 , H01L2224/05073 , H01L2224/05075 , H01L2224/05139 , H01L2224/05144 , H01L2224/05147 , H01L2224/05155 , H01L2224/05184 , H01L2224/05571 , H01L2224/05572 , H01L2224/05582 , H01L2224/05647 , H01L2224/05655 , H01L2224/05666 , H01L2224/1146 , H01L2224/1147 , H01L2224/13022 , H01L2224/13083 , H01L2224/131 , H01L2224/13111 , H01L2224/13116 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13562 , H01L2224/13582 , H01L2224/13644 , H01L2224/13655 , H01L2224/16145 , H01L2224/16148 , H01L2224/16225 , H01L2224/16227 , H01L2224/16238 , H01L2224/81193 , H01L2224/81203 , H01L2224/81815 , H01L2924/00011 , H01L2924/0002 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/14 , H01L2924/00014 , H01L2924/0105 , H01L2224/05552 , H01L2924/00 , H01L2224/81805
摘要： An integrated circuit structure includes a first work piece and a second work piece. The first work piece includes a copper bump at a main surface of the first work piece and having a first dimension; and a nickel-containing barrier layer over and adjoining the copper bump. The second work piece is bonded to the first work piece and includes a bond pad at a main surface of the second work piece; and a solder mask at the main surface of the second work piece and having a solder resist opening with a second dimension exposing a portion of the bond pad. A ratio of the first dimension to the second dimension is greater than about 1. Further, a solder region electrically connects the copper bump to the bond pad, with a vertical distance between the bond pad and the copper bump being greater than about 30 μm.
摘要翻译： 集成电路结构包括第一工件和第二工件。 第一工件包括在第一工件的主表面处的铜凸块并且具有第一尺寸; 以及在铜凸块上并邻接铜凸点的含镍阻挡层。 第二工件被接合到第一工件并且在第二工件的主表面上包括接合焊盘; 以及在第二工件的主表面处的焊料掩模，并且具有暴露焊接焊盘的一部分的具有第二尺寸的阻焊剂开口。 第一尺寸与第二尺寸的比率大于约1.此外，焊料区域将铜凸块电连接到接合焊盘，接合焊盘和铜凸块之间的垂直距离大于约30μm。
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公开(公告)号：US09257412B2
公开(公告)日：2016-02-09
申请号：US13611226
申请日：2012-09-12
申请人： Yao-Chun Chuang , Yu-Chen Hsu , Hao-Juin Liu , Chita Chuang , Chen-Cheng Kuo , Chen-Shien Chen
发明人： Yao-Chun Chuang , Yu-Chen Hsu , Hao-Juin Liu , Chita Chuang , Chen-Cheng Kuo , Chen-Shien Chen
CPC分类号： H01L25/50 , H01L21/563 , H01L23/3192 , H01L23/562 , H01L24/11 , H01L24/13 , H01L24/16 , H01L25/0657 , H01L2224/0401 , H01L2224/05022 , H01L2224/05572 , H01L2224/10125 , H01L2224/13022 , H01L2224/13111 , H01L2224/13147 , H01L2224/14133 , H01L2224/14135 , H01L2224/16145 , H01L2224/73204 , H01L2225/06513 , H01L2225/06527 , H01L2225/06582 , H01L2924/00014 , H01L2924/01047 , H01L2924/01029 , H01L2924/00012 , H01L2224/05552
摘要： A structure comprises a plurality of connectors formed on a top surface of a first semiconductor die, a second semiconductor die formed on the first semiconductor die and coupled to the first semiconductor die through the plurality of connectors and a first dummy conductive plane formed between an edge of the first semiconductor die and the plurality of connectors, wherein an edge of the first dummy conductive plane and a first distance to neutral point (DNP) direction form a first angle, and wherein the first angle is less than or equal to 45 degrees.
摘要翻译： 一种结构包括形成在第一半导体管芯的顶表面上的多个连接器，形成在第一半导体管芯上并通过多个连接器耦合到第一半导体管芯的第二半导体管芯，以及形成在第一半导体管芯的边缘 的第一半导体管芯和多个连接器，其中第一虚拟导电平面的边缘和中性点（DNP）方向的第一距离形成第一角度，并且其中第一角度小于或等于45度。
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公开(公告)号：US08847387B2
公开(公告)日：2014-09-30
申请号：US12842304
申请日：2010-07-23
IPC分类号： H01L23/48 , H01L23/00 , H01L23/498
CPC分类号： H01L23/49827 , H01L23/49816 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/81 , H01L2224/0401 , H01L2224/05022 , H01L2224/05073 , H01L2224/05075 , H01L2224/05139 , H01L2224/05144 , H01L2224/05147 , H01L2224/05155 , H01L2224/05184 , H01L2224/05571 , H01L2224/05572 , H01L2224/05582 , H01L2224/05647 , H01L2224/05655 , H01L2224/05666 , H01L2224/1146 , H01L2224/1147 , H01L2224/13022 , H01L2224/13083 , H01L2224/131 , H01L2224/13111 , H01L2224/13116 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13562 , H01L2224/13582 , H01L2224/13644 , H01L2224/13655 , H01L2224/16145 , H01L2224/16148 , H01L2224/16225 , H01L2224/16227 , H01L2224/16238 , H01L2224/81193 , H01L2224/81203 , H01L2224/81815 , H01L2924/00011 , H01L2924/0002 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/14 , H01L2924/00014 , H01L2924/0105 , H01L2224/05552 , H01L2924/00 , H01L2224/81805
摘要： An integrated circuit structure includes a first work piece and a second work piece. The first work piece includes a copper bump at a main surface of the first work piece and having a first dimension; and a nickel-containing barrier layer over and adjoining the copper bump. The second work piece is bonded to the first work piece and includes a bond pad at a main surface of the second work piece; and a solder mask at the main surface of the second work piece and having a solder resist opening with a second dimension exposing a portion of the bond pad. A ratio of the first dimension to the second dimension is greater than about 1. Further, a solder region electrically connects the copper bump to the bond pad, with a vertical distance between the bond pad and the copper bump being greater than about 30 μm.
摘要翻译： 集成电路结构包括第一工件和第二工件。 第一工件包括在第一工件的主表面处的铜凸块并且具有第一尺寸; 以及在铜凸块上并邻接铜凸点的含镍阻挡层。 第二工件被接合到第一工件并且在第二工件的主表面上包括接合焊盘; 以及在第二工件的主表面处的焊料掩模，并且具有暴露焊接焊盘的一部分的具有第二尺寸的阻焊剂开口。 第一尺寸与第二尺寸的比率大于约1.此外，焊料区域将铜凸块电连接到接合焊盘，焊接块和铜凸块之间的垂直距离大于约30μm。
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公开(公告)号：US08729699B2
公开(公告)日：2014-05-20
申请号：US13276090
申请日：2011-10-18
IPC分类号： H01L23/48
CPC分类号： H01L24/16 , H01L23/3114 , H01L23/3192 , H01L23/49811 , H01L24/03 , H01L24/05 , H01L24/06 , H01L24/13 , H01L24/14 , H01L24/81 , H01L2224/0401 , H01L2224/05022 , H01L2224/05027 , H01L2224/05124 , H01L2224/05166 , H01L2224/05572 , H01L2224/05647 , H01L2224/061 , H01L2224/06132 , H01L2224/13014 , H01L2224/13022 , H01L2224/13027 , H01L2224/1308 , H01L2224/13083 , H01L2224/13111 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13164 , H01L2224/13541 , H01L2224/1405 , H01L2224/141 , H01L2224/16105 , H01L2224/16237 , H01L2924/00014 , H01L2924/01029 , H01L2924/014 , H01L2924/00012 , H01L2924/01047 , H01L2924/206 , H01L2224/05552
摘要： A die includes a substrate, a metal pad over the substrate, and a passivation layer covering edge portions of the metal pad. A metal pillar is formed over the metal pad. A portion of the metal pillar overlaps a portion of the metal pad. A center of the metal pillar is misaligned with a center of the metal pad.
摘要翻译： 芯片包括衬底，衬底上的金属焊盘以及覆盖金属焊盘的边缘部分的钝化层。 在金属垫上形成金属支柱。 金属柱的一部分与金属垫的一部分重叠。 金属支柱的中心与金属垫的中心不对齐。
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公开(公告)号：US08299616B2
公开(公告)日：2012-10-30
申请号：US12697008
申请日：2010-01-29
CPC分类号： H01L21/50 , H01L21/768 , H01L23/498 , H01L24/11 , H01L24/13 , H01L2224/05124 , H01L2224/05139 , H01L2224/05147 , H01L2224/05166 , H01L2224/05184 , H01L2224/05624 , H01L2224/05639 , H01L2224/05647 , H01L2224/05666 , H01L2224/05681 , H01L2224/05684 , H01L2224/13017 , H01L2224/13019 , H01L2224/13076 , H01L2224/13082 , H01L2224/13083 , H01L2224/131 , H01L2224/16503 , H01L2224/32503 , H01L2224/32507 , H01L2224/81193 , H01L2224/8181 , H01L2924/14 , H01L2924/15788 , H01L2924/181 , H01L2924/014 , H01L2924/00 , H01L2924/00014 , H01L2924/013
摘要： A T-shaped post for semiconductor devices is provided. The T-shaped post has an under-bump metallization (UBM) section and a pillar section extending from the UBM section. The UBM section and the pillar section may be formed of a same material or different materials. In an embodiment, a substrate, such as a die, wafer, printed circuit board, packaging substrate, or the like, having T-shaped posts is attached to a contact of another substrate, such as a die, wafer, printed circuit board, packaging substrate, or the like. The T-shaped posts may have a solder material pre-formed on the pillar section such that the pillar section is exposed or such that the pillar section is covered by the solder material. In another embodiment, the T-shaped posts may be formed on one substrate and the solder material formed on the other substrate.
摘要翻译： 提供了一种用于半导体器件的T形柱。 T形柱具有凸起下金属化（UBM）部分和从UBM部分延伸的柱部分。 UBM部分和支柱部分可以由相同的材料或不同的材料形成。 在一个实施例中，具有T形柱的衬底（例如管芯，晶片，印刷电路板，封装衬底等）被附接到另一个衬底（例如管芯，晶片，印刷电路板， 包装衬底等。 T形柱可以具有预先形成在柱部上的焊料材料，使得柱部分暴露或者使得柱部分被焊料材料覆盖。 在另一个实施例中，T形柱可以形成在一个基底上，并且焊料材料形成在另一个基底上。
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公开(公告)号：US20120270369A1
公开(公告)日：2012-10-25
申请号：US13540439
申请日：2012-07-02
IPC分类号： H01L21/60
CPC分类号： H01L23/49816 , H01L23/49811 , H01L23/49866 , H01L24/13 , H01L24/16 , H01L2224/1308 , H01L2224/13083 , H01L2224/13111 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13157 , H01L2224/13164 , H01L2224/13169 , H01L2224/16225 , H01L2224/16227 , H01L2224/73204 , H01L2924/00013 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01043 , H01L2924/01046 , H01L2924/01047 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/10329 , H01L2924/14 , H01L2924/15787 , H01L2924/181 , H01L2924/351 , H01L2924/00014 , H01L2924/01027 , H01L2924/01083 , H01L2924/01015 , H01L2224/13099 , H01L2924/00
摘要： Methods for forming lead free solder interconnections for integrated circuits. A copper column extends from an input/output terminal of an integrated circuit. A cap layer of material is formed on the input/output terminal of the integrated circuit. A lead free solder connector is formed on the cap layer. A substrate having a metal finish solder pad is aligned with the solder connector. An intermetallic compound is formed at the interface between the cap layer and the lead free solder connector. A solder connection is formed between input/output terminal of the integrated circuit and the metal finish pad that is less than 0.5 weight percent copper, and the intermetallic compound is substantially free of copper.
摘要翻译： 用于形成用于集成电路的无铅焊料互连的方法。 铜列从集成电路的输入/输出端子延伸。 在集成电路的输入/输出端子上形成覆盖层材料。 在盖层上形成无铅焊料连接器。 具有金属整理剂焊盘的基板与焊料连接器对准。 在盖层和无铅焊料连接器之间的界面处形成金属间化合物。 在集成电路的输入/输出端子和小于0.5重量百分比的铜的金属表面焊盘之间形成焊料连接，并且金属间化合物基本上不含铜。
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公开(公告)号：US08232643B2
公开(公告)日：2012-07-31
申请号：US12729021
申请日：2010-03-22
IPC分类号： H01L23/488 , H01L21/60 , H01L23/31
CPC分类号： H01L23/49816 , H01L23/49811 , H01L23/49866 , H01L24/13 , H01L24/16 , H01L2224/1308 , H01L2224/13083 , H01L2224/13111 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13157 , H01L2224/13164 , H01L2224/13169 , H01L2224/16225 , H01L2224/16227 , H01L2224/73204 , H01L2924/00013 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01043 , H01L2924/01046 , H01L2924/01047 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/10329 , H01L2924/14 , H01L2924/15787 , H01L2924/181 , H01L2924/351 , H01L2924/00014 , H01L2924/01027 , H01L2924/01083 , H01L2924/01015 , H01L2224/13099 , H01L2924/00
摘要： Lead free solder interconnections for integrated circuits. A copper column extends from an input/output terminal of an integrated circuit. A cap layer of material is formed on the input/output terminal of the integrated circuit. A lead free solder connector is formed on the cap layer. A substrate having a metal finish solder pad is aligned with the solder connector. An intermetallic compound is formed at the interface between the cap layer and the lead free solder connector. A solder connection is formed between the input/output terminal of the integrated circuit and the metal finish pad that is less than 0.5 weight percent copper, and the intermetallic compound is substantially free of copper.
摘要翻译： 集成电路的无铅焊接互连。 铜列从集成电路的输入/输出端子延伸。 在集成电路的输入/输出端子上形成覆盖层材料。 在盖层上形成无铅焊料连接器。 具有金属整理剂焊盘的基板与焊料连接器对准。 在盖层和无铅焊料连接器之间的界面处形成金属间化合物。 在集成电路的输入/输出端子和小于0.5重量百分比的铜的金属表面焊盘之间形成焊料连接，并且金属间化合物基本上不含铜。
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公开(公告)号：US20140070402A1
公开(公告)日：2014-03-13
申请号：US13611226
申请日：2012-09-12
申请人： Yao-Chun Chuang , Yu-Chen Hsu , Hao-Juin Liu , Chita Chuang , Chen-Cheng Kuo , Chen-Shien Chen
发明人： Yao-Chun Chuang , Yu-Chen Hsu , Hao-Juin Liu , Chita Chuang , Chen-Cheng Kuo , Chen-Shien Chen
CPC分类号： H01L25/50 , H01L21/563 , H01L23/3192 , H01L23/562 , H01L24/11 , H01L24/13 , H01L24/16 , H01L25/0657 , H01L2224/0401 , H01L2224/05022 , H01L2224/05572 , H01L2224/10125 , H01L2224/13022 , H01L2224/13111 , H01L2224/13147 , H01L2224/14133 , H01L2224/14135 , H01L2224/16145 , H01L2224/73204 , H01L2225/06513 , H01L2225/06527 , H01L2225/06582 , H01L2924/00014 , H01L2924/01047 , H01L2924/01029 , H01L2924/00012 , H01L2224/05552
摘要： A structure comprises a plurality of connectors formed on a top surface of a first semiconductor die, a second semiconductor die formed on the first semiconductor die and coupled to the first semiconductor die through the plurality of connectors and a first dummy conductive plane formed between an edge of the first semiconductor die and the plurality of connectors, wherein an edge of the first dummy conductive plane and a first distance to neutral point (DNP) direction form a first angle, and wherein the first angle is less than or equal to 45 degrees.
摘要翻译： 一种结构包括形成在第一半导体管芯的顶表面上的多个连接器，形成在第一半导体管芯上并通过多个连接器耦合到第一半导体管芯的第二半导体管芯，以及形成在第一半导体管芯的边缘 的第一半导体管芯和多个连接器，其中第一虚拟导电平面的边缘和中性点（DNP）方向的第一距离形成第一角度，并且其中第一角度小于或等于45度。
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公开(公告)号：US08659123B2
公开(公告)日：2014-02-25
申请号：US13247616
申请日：2011-09-28
申请人： Yao-Chun Chuang , Chita Chuang , Chen-Cheng Kuo , Chen-Shien Chen
发明人： Yao-Chun Chuang , Chita Chuang , Chen-Cheng Kuo , Chen-Shien Chen
IPC分类号： H01L23/58
CPC分类号： H01L24/05 , H01L23/291 , H01L23/293 , H01L23/3192 , H01L24/06 , H01L24/13 , H01L2224/02235 , H01L2224/0401 , H01L2224/05012 , H01L2224/05022 , H01L2224/05124 , H01L2224/05572 , H01L2224/05647 , H01L2224/05666 , H01L2224/06051 , H01L2224/06179 , H01L2224/13012 , H01L2224/13022 , H01L2224/13083 , H01L2224/13111 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13164 , H01L2924/00014 , H01L2924/01029 , H01L2924/014 , H01L2924/01047 , H01L2924/00012 , H01L2224/05552
摘要： A die includes a substrate, a metal pad over the substrate, and a passivation layer that has a portion over the metal pad. A dummy pattern is disposed adjacent to the metal pad. The dummy pattern is level with, and is formed of a same material as, the metal pad. The dummy pattern forms at least a partial ring surrounding at least a third of the metal pad.
摘要翻译： 芯片包括衬底，衬底上的金属焊盘以及在金属焊盘上方具有一部分的钝化层。 伪图案邻近金属垫设置。 虚拟图案与金属垫相同并且由与金属垫相同的材料形成。 虚设图案至少形成围绕金属垫的至少三分之一的部分环。
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