公开(公告)号：US20180350826A1

公开(公告)日：2018-12-06

申请号：US15995693

申请日：2018-06-01

Applicant: Applied Materials, Inc.

Inventor： Jacqueline S. Wrench ,  Jing Zhou ,  Fuqun Grace Vasiknanonte ,  Jiang Lu ,  Paul F. Ma ,  Nobuyuki Sasaki ,  Sree Rangasai V. Kesapragada ,  Sang Ho Yu ,  Mei Chang

IPC: H01L27/11551 ,  H01L27/11578 ,  H01L21/822 ,  H01L21/8229 ,  H01L21/8239 ,  H01L21/285

Abstract: Embodiments of the invention provide methods of processing a substrate having a stack of spaced oxide layers with gaps between the oxide layers. A metallic nucleation layer is formed in the gaps and a cobalt film is deposited on the nucleation layer to form wordlines.

公开(公告)号：US10094023B2

公开(公告)日：2018-10-09

申请号：US14815156

申请日：2015-07-31

Applicant: APPLIED MATERIALS, INC.

Inventor： Sang Ho Yu ,  Mei Chang

IPC: H01L21/00 ,  C23C16/46 ,  C23C16/458 ,  C23C16/18 ,  C23C16/56 ,  H01L21/285 ,  H01L21/768 ,  H01L23/532

Abstract: Methods and apparatus for depositing a cobalt layer in features formed on a substrate are provided herein. In some embodiments, a method of depositing a cobalt layer atop a substrate includes: (a) providing a substrate to a substrate support that is rotatable between two processing positions; (b) exposing the substrate to a cobalt containing precursor at a first processing position to deposit a cobalt layer atop the substrate; (c) rotating the substrate having the deposited cobalt layer to a second processing position; and (d) treating the substrate at the second processing position to remove contaminants from the cobalt layer.

公开(公告)号：US20180250695A1

公开(公告)日：2018-09-06

申请号：US15910398

申请日：2018-03-02

Applicant: Applied Materials, Inc.

Inventor： Kenric Choi ,  Xiaoxiong Yuan ,  Daping Yao ,  Mei Chang

IPC: B05B7/24 ,  B65D1/09 ,  B05B7/00

CPC classification number: B05B7/2491 ,  B05B7/0075 ,  B65D1/09 ,  C23C16/448 ,  H01L21/67017 ,  H01L21/68

Abstract: Ampoules for a semiconductor manufacturing precursors and methods of use are described. The ampoules include a container with an inlet port and an outlet port. The inlet port has a showerhead that the end within the container. The showerhead has at least two angled nozzles to direct the flow of gas within the cavity so that the gas flow is not perpendicular to the surface of a liquid within the ampoule.

公开(公告)号：US20180144973A1

公开(公告)日：2018-05-24

申请号：US15800784

申请日：2017-11-01

Applicant: Applied Materials, Inc.

Inventor： Weifeng Ye ,  Jiang Lu ,  Feng Chen ,  Zhiyuan Wu ,  Kai Wu ,  Vikash Banthia ,  He Ren ,  Sang Ho Yu ,  Mei Chang ,  Feiyue Ma ,  Yu Lei ,  Keyvan Kashefizadeh ,  Kevin Moraes ,  Paul F. Ma ,  Hua Ai

IPC: H01L21/768 ,  H01L21/02 ,  H01L23/532 ,  H01L23/522

CPC classification number: H01L21/7685 ,  H01L21/02068 ,  H01L21/28562 ,  H01L21/76834 ,  H01L21/76849 ,  H01L21/76877 ,  H01L21/76883 ,  H01L23/5226 ,  H01L23/53238

Abstract: Methods to selectively deposit capping layers on a copper surface relative to a dielectric surface comprising separately the copper surface to a cobalt precursor gas and a tungsten precursor gas, each in a separate processing chamber. The copper surface and the dielectric surfaces can be substantially coplanar. The combined thickness of cobalt and tungsten capping films is in the range of about 2 Å to about 60 Å.

公开(公告)号：US20170362710A1

公开(公告)日：2017-12-21

申请号：US15696969

申请日：2017-09-06

Applicant: Applied Materials, Inc.

Inventor： Zhenbin Ge ,  Chien-Teh Kao ,  Joel M. Huston ,  Mei Chang

IPC: C23C16/455 ,  B08B9/032 ,  C23C14/22 ,  C23C16/52 ,  C23C16/44

CPC classification number: C23C16/45565 ,  B08B9/0325 ,  C23C14/22 ,  C23C16/4412 ,  C23C16/45574 ,  C23C16/45578 ,  C23C16/52 ,  Y10T137/4259

Abstract: Provided are gas distribution apparatus with a delivery channel having an inlet end, an outlet end and a plurality of apertures spaced along the length. The inlet end is connectable to an inlet gas source and the outlet end is connectible with a vacuum source. Also provided are gas distribution apparatus with spiral delivery channels, intertwined spiral delivery channels, splitting delivery channels, merging delivery channels and shaped delivery channels in which an inlet end and outlet end are configured for rapid exchange of gas within the delivery channels.

公开(公告)号：US09773663B2

公开(公告)日：2017-09-26

申请号：US15230218

申请日：2016-08-05

Applicant: Applied Materials, Inc. ,  The Regents of the University of California

Inventor： Jessica S. Kachian ,  Naomi Yoshida ,  Mei Chang ,  Mary Edmonds ,  Andrew C. Kummel ,  Sang Wook Park ,  Hyunwoong Kim

IPC: H01L21/02

CPC classification number: H01L21/0228 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02178 ,  H01L21/022 ,  H01L21/02205 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/02299 ,  H01L21/02301 ,  H01L21/02304

Abstract: Embodiments described herein provide a self-limiting and saturating Si—Ox bilayer process which does not require the use of a plasma or catalyst and that does not lead to undesirable substrate oxidation. Methods of the disclosure do not produce SiO2, but instead produce a saturated Si—Ox film with —OH termination to make substrate surfaces highly reactive towards metal ALD precursors to seed high nucleation and growth of gate oxide ALD materials.

公开(公告)号：US09595466B2

公开(公告)日：2017-03-14

申请号：US14717740

申请日：2015-05-20

Applicant: APPLIED MATERIALS, INC.

Inventor： Xinyu Fu ,  Srinivas Gandikota ,  Mei Chang ,  Seshadri Ganguli ,  Guoqiang Jian ,  Yixiong Yang ,  Vikash Banthia ,  Jonathan Bakke

IPC: H01L21/44 ,  H01L21/768

CPC classification number: H01L21/76816 ,  H01L21/32135 ,  H01L21/76843 ,  H01L21/76865 ,  H01L21/76877 ,  H01L21/76879

Abstract: Methods for etching a substrate are provided herein. In some embodiments, a method for etching a substrate disposed within a processing volume of a process chamber includes: (a) exposing a first layer disposed atop the substrate to a first gas comprising tungsten chloride (WClx) for a first period of time and at a first pressure, wherein x is 5 or 6; (b) purging the processing volume of the first gas using an inert gas for a second period of time; (c) exposing the substrate to a hydrogen-containing gas for a third period of time to etch the first layer after purging the processing volume of the first gas; and (d) purging the processing volume of the hydrogen-containing gas using the inert gas for a fourth period of time.

Abstract translation: 本发明提供蚀刻基板的方法。 在一些实施例中，用于蚀刻设置在处理室的处理体积内的衬底的方法包括：（a）将设置在衬底顶部的第一层暴露于包含氯化钨（WClx）的第一气体第一时间段 第一压力，其中x为5或6; （b）使用惰性气体吹扫第一气体的处理量第二段; （c）在清洗第一气体的处理容积之后，将衬底暴露于含氢气体持续第三时间以蚀刻第一层; 和（d）使用惰性气体净化含氢气体的处理量第四个时间段。

公开(公告)号：US20170062224A1

公开(公告)日：2017-03-02

申请号：US15234448

申请日：2016-08-11

Applicant: Applied Materials, Inc.

Inventor： Xinyu Fu ,  David Knapp ,  David Thompson ,  Jeffrey W. Anthis ,  Mei Chang

IPC: H01L21/285 ,  C23C16/455 ,  C23C16/08

CPC classification number: H01L21/28562 ,  C23C16/06 ,  C23C16/08 ,  C23C16/45527 ,  C23C16/45553 ,  H01L21/28556 ,  H01L29/7869

Abstract: Processing methods comprising exposing a substrate to an optional nucleation promoter followed by sequential exposure of a first reactive gas comprising a metal oxyhalide compound and a second reactive gas to form a metal film on the substrate.

Abstract translation: 处理方法包括将基底暴露于任选的成核促进剂，随后连续暴露包含金属卤化物化合物和第二反应气体的第一反应气体，以在基底上形成金属膜。

公开(公告)号：US09551070B2

公开(公告)日：2017-01-24

申请号：US14291781

申请日：2014-05-30

Applicant: APPLIED MATERIALS, INC.

Inventor： Mei Chang ,  Chien-Teh Kao ,  Juno Yu-Ting Huang

IPC: C23C16/455 ,  C23C16/22 ,  C23C16/44 ,  C23C16/458 ,  H01J37/32

CPC classification number: C23C16/45525 ,  C23C16/22 ,  C23C16/4401 ,  C23C16/4581 ,  H01J37/32477 ,  H01J37/32715

Abstract: Corrosion resistant substrate supports and methods of making corrosion resistant substrate supports are provided herein. In some embodiments, a method of making corrosion resistant substrate supports includes exposing the substrate support disposed within a substrate processing chamber to a process gas comprising an aluminum containing precursor; and depositing an aluminum containing layer atop surfaces of the substrate support.

Abstract translation: 本文提供了耐腐蚀基板支撑件和制造耐腐蚀基板支撑件的方法。 在一些实施例中，制造耐腐蚀的衬底支撑件的方法包括将设置在衬底处理室内的衬底支撑件暴露于包含含铝前体的工艺气体; 以及在所述基底支撑体的表面的顶部上沉积含铝层。

公开(公告)号：US20160104624A1

公开(公告)日：2016-04-14

申请号：US14965349

申请日：2015-12-10

Applicant: Applied Materials, Inc.

Inventor： Xinyu Fu ,  Srinivas Gandikota ,  Avgerinos V. Gelatos ,  Atif Noori ,  Mei Chang ,  David Thompson ,  Steve G. Ghanayem

IPC: H01L21/285 ,  C23C16/455 ,  C23C16/06 ,  H01L21/3205

CPC classification number: H01L21/28562 ,  C23C16/0272 ,  C23C16/06 ,  C23C16/14 ,  C23C16/345 ,  C23C16/42 ,  C23C16/45525 ,  C23C16/45551 ,  C23C16/45553 ,  C23C16/45563 ,  C23C16/45565 ,  C23C16/4557 ,  C23C16/45574 ,  H01L21/28088 ,  H01L21/28506 ,  H01L21/32051 ,  H01L21/32053 ,  H01L21/76877

Abstract: Provided are atomic layer deposition methods to deposit a tungsten film or tungsten-containing film using a tungsten-containing reactive gas comprising one or more of tungsten pentachloride, a compound with the empirical formula WCl5 or WCl6.

Abstract translation: 提供了使用包含一种或多种五氯化钨，具有经验式WCl 5或WCl 6的化合物的含钨反应气体沉积钨膜或含钨膜的原子层沉积方法。