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    COPPER ALLOY SHEET WITH SN COATING LAYER FOR A FITTING TYPE CONNECTION TERMINAL AND A FITTING TYPE CONNECTION TERMINAL
    91.
    发明申请
    COPPER ALLOY SHEET WITH SN COATING LAYER FOR A FITTING TYPE CONNECTION TERMINAL AND A FITTING TYPE CONNECTION TERMINAL 审中-公开
    具有SN涂层的铜合金板用于配接型连接端子和配接型连接端子

    公开(公告)号：US20130237105A1

    公开(公告)日：2013-09-12

    申请号：US13785549

    申请日：2013-03-05

    申请人： KABUSHIKI KAISHA KOBE SEIKO SHO (KOBE STEEL, LTD.)

    发明人： Masahiro Tsuru ,  Ryoichi Ozaki ,  Koichi Taira

    IPC分类号： H01R13/03

    CPC分类号： H01R13/03 ,  B32B15/01 ,  C22C9/02 ,  C22C9/06 ,  C22F1/08 ,  C25D3/12 ,  C25D3/30 ,  C25D3/38 ,  C25D5/12 ,  C25D5/505 ,  C25D7/00 ,  Y10T428/12715

    摘要： A copper alloy sheet with a Sn coating layer comprises a base material made of Cu—Ni—Si system copper alloy. Formed on the base material is a Ni coating layer having an average thickness of 0.1 to 0.8 μm. Formed on the Ni coating layer is a Cu—Sn alloy coating layer having an average thickness of 0.4 to 1.0 μm. Formed on the Cu—Sn alloy coating layer is an Sn coating layer having average thickness of 0.1 to 0.8 μm. A material surface is subject to reflow treatment and has arithmetic mean roughness Ra of 0.03 μm or more and less than 0.15 μm in both a direction parallel to the rolling direction and a direction perpendicular to the rolling direction. An exposure rate of the Cu—Sn alloy coating layer to the material surface is 10 to 50%. A fitting type connection terminal requiring low insertion force can be obtained at a low cost.

    摘要翻译： 具有Sn涂层的铜合金板包括由Cu-Ni-Si系铜合金制成的基材。 在基材上形成平均厚度为0.1〜0.8μm的Ni被覆层。 在Ni涂层上形成平均厚度为0.4〜1.0μm的Cu-Sn合金被覆层。 在Cu-Sn合金涂层上形成平均厚度为0.1〜0.8μm的Sn被覆层。 材料表面进行回流处理，并且在平行于轧制方向的方向和垂直于轧制方向的方向上的算术平均粗糙度Ra为0.03μm以上且小于0.15μm。 Cu-Sn合金被覆层与材料表面的接触率为10〜50％。 可以以低成本获得需要低插入力的装配型连接端子。

    PHOTOVOLTAIC DEVICES WITH METAL SEMICONDUCTOR ALLOY METALLIZATION
    97.
    发明申请
    PHOTOVOLTAIC DEVICES WITH METAL SEMICONDUCTOR ALLOY METALLIZATION 审中-公开
    具有金属半导体合金金属化的光电器件

    公开(公告)号：US20130065345A1

    公开(公告)日：2013-03-14

    申请号：US13602120

    申请日：2012-09-01

    申请人： Qiang Huang

    发明人： Qiang Huang

    IPC分类号： H01L31/18

    CPC分类号： H01L31/022425 ,  C25D3/38 ,  C25D5/12 ,  C25D5/50 ,  C25D7/12 ,  Y02E10/50

    摘要： A photovoltaic device, such as a solar cell, having improved performance is provided. In one embodiment, the photovoltaic device includes a multimetal semiconductor alloy layer located on exposed portions of a front side surface of a semiconductor substrate. The multimetal semiconductor alloy layer includes at least a first elemental metal that forms an alloy with a semiconductor material, and a second elemental metal that differs from the first elemental metal and that does not form an alloy with a semiconductor material at the same temperature as the first elemental metal. The photovoltaic device further includes a copper-containing layer located atop the multimetal semiconductor alloy layer.

    摘要翻译： 提供了具有改进性能的光电器件，例如太阳能电池。 在一个实施例中，光伏器件包括位于半导体衬底的前侧表面的暴露部分上的多金属半导体合金层。 多金属半导体合金层至少包含与半导体材料形成合金的第一元素金属和与第一元素金属不同的第二元素金属，并且在与第一元素金属相同的温度下不与半导体材料形成合金 第一元素金属。 光电器件还包括位于多金属半导体合金层顶部的含铜层。

    Method of preparing chromium plating bath and method of forming plating film
    98.
    发明授权
    Method of preparing chromium plating bath and method of forming plating film 有权
    镀铬浴的制备方法及镀膜方法

    公开(公告)号：US08372259B2

    公开(公告)日：2013-02-12

    申请号：US12620352

    申请日：2009-11-17

    申请人： Toru Murakami ,  Suhaimi Hamid ,  Ryo Maeda

    发明人： Toru Murakami ,  Suhaimi Hamid ,  Ryo Maeda

    IPC分类号： C25D3/04 ,  C25D3/06 ,  C25D3/10

    CPC分类号： C25D3/04 ,  C25D3/06 ,  C25D5/12 ,  C25D5/14

    摘要： A chromium plating bath containing trivalent chromium ions and hexavalent chromium ions is prepared by a method including the steps of: (A) mixing chromic acid and an organic acid in an aqueous solution containing these acids and reducing chromic acid by the organic acid so as to prepare an aqueous solution not containing hexavalent chromium ions; (B) adding a pH adjustor to the aqueous solution not containing hexavalent chromium ions so as to adjust pH to a value of 1 to 4; and (C) further adding chromic acid to the aqueous solution not containing hexavalent chromium ions and having undergone the pH adjustment so as to prepare an aqueous solution containing trivalent chromium ions and hexavalent chromium ions. The chromium plating bath containing both trivalent chromium ions and hexavalent chromium ions can be prepared while easily and assuredly adjusting the contents (content ratio) of trivalent chromium ions and hexavalent chromium ions to predetermined values (a predetermined value).

    摘要翻译： 通过包括以下步骤的方法制备含有三价铬离子和六价铬离子的镀铬浴：（A）将含有这些酸的水溶液中的铬酸和有机酸混合并用有机酸还原铬酸， 制备不含六价铬离子的水溶液; （B）向不含六价铬离子的水溶液中添加pH调节剂，以将pH调节至1〜4的值; 和（C）进一步向不含六价铬离子的水溶液中加入铬酸，并进行pH调节，以制备含有三价铬离子和六价铬离子的水溶液。 可以容易且可靠地将三价铬离子和六价铬离子的含量（含有比例）调整为规定值（规定值），同时制备含有三价铬离子和六价铬离子的镀铬浴。