摘要:
A metal foil including: a steel layer whose thickness is 10 to 200 μm; an Al-containing metal layer arranged on the steel layer; and plural granular alloys which exist in an interface between the steel layer and the Al-containing metal layer, wherein, when a cutting-plane line of a surface of the Al-containing metal layer is defined as a contour curve and an approximation straight line of the contour curve is defined as a contour average straight line, a maximum point, whose distance from the contour average straight line is more than 10 μm, is absent on the contour curve, and wherein, when an equivalent sphere diameter of the granular alloys is x in units of μm and a thickness of the Al-containing metal layer is T in units of μm, the granular alloys satisfy x≦0.5T.
摘要:
A metal foil including: a steel layer whose thickness is 10 to 200 μm; an alloy layer which contains Fe and Al and which is formed on the steel layer; and an Al-containing metal layer arranged on the alloy layer, wherein, when a cutting-plane line of a surface of the Al-containing metal layer is defined as a contour curve and an approximation straight line of the contour curve is defined as a contour average straight line, a maximum point, whose distance from the contour average straight line is more than 10 μm, is absent on the contour curve, and a thickness of the alloy layer is 0.1 to 8 μm and the alloy layer contains an Al7Cu2Fe intermetallic compound or FeAl3 based intermetallic compounds.
摘要:
A metal foil including: a steel layer whose thickness is 10 to 200 μm; an Al-containing metal layer arranged on the steel layer; and plural granular alloys which exist in an interface between the steel layer and the Al-containing metal layer, wherein, when a cutting-plane line of a surface of the Al-containing metal layer is defined as a contour curve and an approximation straight line of the contour curve is defined as a contour average straight line, a maximum point, whose distance from the contour average straight line is more than 10 μm, is absent on the contour curve, and wherein, when an equivalent sphere diameter of the granular alloys is x in units of μm and a thickness of the Al-containing metal layer is T in units of μm, the granular alloys satisfy x≦0.5T.
摘要:
A metal foil including: a steel layer whose thickness is 10 to 200 μm; an alloy layer which contains Fe and Al and which is formed on the steel layer; and an Al-containing metal layer arranged on the alloy layer, wherein, when a cutting-plane line of a surface of the Al-containing metal layer is defined as a contour curve and an approximation straight line of the contour curve is defined as a contour average straight line, a maximum point, whose distance from the contour average straight line is more than 10 μm, is absent on the contour curve, and a thickness of the alloy layer is 0.1 to 8 μm and the alloy layer contains an Al7Cu2Fe intermetallic compound or FeAl3 based intermetallic compounds.
摘要:
The present invention relates to a solder ball for semiconductor packaging and an electronic member having such solder ball. Specifically there are provided: a solder ball capable of ensuring a sufficient thermal fatigue property even when a diameter thereof is not larger than 250 μm as observed in recent years; and an electronic member having such solder ball. More specifically, there are provided: a solder ball for semiconductor packaging that is made of a solder alloy containing Sn as a main element, 0.1-2.5% Ag by mass, 0.1-1.5% Cu by mass and at least one of Mg, Al and Zn in a total amount of 0.0001-0.005% by mass, such solder ball having a surface including a noncrystalline phase that has a thickness of 1-50 nm and contains at least one of Mg, Al and Zn, O and Sn, and an electronic member having such solder ball.
摘要:
The present invention relates to a solder ball for semiconductor packaging and an electronic member having such solder ball. Specifically there are provided: a solder ball capable of ensuring a sufficient thermal fatigue property even when a diameter thereof is not larger than 250 μm as observed in recent years; and an electronic member having such solder ball. More specifically, there are provided: a solder ball for semiconductor packaging that is made of a solder alloy containing Sn as a main element, 0.1-2.5% Ag by mass, 0.1-1.5% Cu by mass and at least one of Mg, Al and Zn in a total amount of 0.0001-0.005% by mass, such solder ball having a surface including a noncrystalline phase that has a thickness of 1-50 nm and contains at least one of Mg, Al and Zn, O and Sn, and an electronic member having such solder ball.
摘要:
A lead-free solder alloy, a solder ball and an electronic member comprising a solder bump which enable the prevention of the occurrence of yellow discoloration on the surface of a solder after soldering, the surface of a solder bump after the formation of the bump in a BGA, and the surface of a solder bump after a burn-in test of a BGA. Specifically disclosed are: a lead-free solder alloy; a solder ball; and an electronic member comprising a solder bump, containing at least one additive element selected from Li, Na, K, Ca, Be, Mg, Sc, Y, lanthanoid series elements, Ti, Zr, Hf, Nb, Ta, Mo, Zn, Al, Ga, In, Si and Mn in the total amount of 1 ppm by mass to 0.1% by mass inclusive, with the remainder being 40% by mass or more of Sn.
摘要:
According to a lead-free solder bump bonding structure, by causing the interface (IMC interface) of the intermetallic compound layer at a lead-free-solder-bump side to have scallop shapes of equal to or less than 0.02 [portions/μm] without forming in advance an Ni layer as a barrier layer on the surfaces of respective Cu electrodes of first and second electronic components like conventional technologies, a Cu diffusion can be inhibited, thereby inhibiting an occurrence of an electromigration. Hence, the burden at the time of manufacturing can be reduced by what corresponds to an omission of the formation process of the Ni layer as a barrier layer on the Cu electrode surfaces, and thus a lead-free solder bump bonding structure can be provided which reduces a burden at the time of manufacturing in comparison with conventional technologies and which can inhibit an occurrence of an electromigration.
摘要:
A lead-free solder alloy exhibiting good performance in impact resistance and vibration resistance. Also provided are a solder ball using such a lead-free solder alloy, and an electronic member having a solder bump using such a lead-free alloy. Specifically, the lead-free solder alloy consists of 1.0 to 2.0% by mass of Ag, 0.3 to 1.0% by mass of Cu, 0.005 to 0.1% by mass of Ni and the balance including Sn and unavoidable impurities. In an Sn—Ag—Cu based solder joint portion on a Cu electrode, a Cu3Sn intermetallic compound layer is formed directly on the Cu electrode, and then a Cu6Sn5 intermetallic compound layer is formed thereon. A Cu atomic site in the Cu6Sn5 intermetallic compound layer is replaced by Ni having a smaller atomic radius than Cu to thereby reduce strain in the Cu6Sn5 intermetallic compound layer, thus enabling impact resistance and vibration resistance to be improved therein.
摘要:
A lead-free solder alloy exhibiting good performance in impact resistance and vibration resistance. Also provided are a solder ball using such a lead-free solder alloy, and an electronic member having a solder bump using such a lead-free alloy. Specifically, the lead-free solder alloy consists of 1.0 to 2.0% by mass of Ag, 0.3 to 1.0% by mass of Cu, 0.005 to 0.1% by mass of Ni and the balance including Sn and unavoidable impurities. In an Sn—Ag—Cu based solder joint portion on a Cu electrode, a Cu3Sn intermetallic compound layer is formed directly on the Cu electrode, and then a Cu6Sn5 intermetallic compound layer is formed thereon. A Cu atomic site in the Cu6Sn5 intermetallic compound layer is replaced by Ni having a smaller atomic radius than Cu to thereby reduce strain in the Cu6Sn5 intermetallic compound layer, thus enabling impact resistance and vibration resistance to be improved therein.