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20 条记录 (耗时 0.017 秒)

    LEAD-FREE SOLDER ALLOY, SOLDER BALL AND ELECTRONIC MEMBER, AND LEAD-FREE SOLDER ALLOY, SOLDER BALL AND ELECTRONIC MEMBER FOR AUTOMOBILE-MOUNTED ELECTRONIC MEMBER
    3.
    发明申请
    LEAD-FREE SOLDER ALLOY, SOLDER BALL AND ELECTRONIC MEMBER, AND LEAD-FREE SOLDER ALLOY, SOLDER BALL AND ELECTRONIC MEMBER FOR AUTOMOBILE-MOUNTED ELECTRONIC MEMBER 有权
    无铅焊接合金，焊球和电子部件，以及无铅焊接合金，焊球和电子部件，用于汽车安装电子部件

    公开(公告)号：US20090304545A1

    公开(公告)日：2009-12-10

    申请号：US12281430

    申请日：2007-03-08

    申请人： Masamoto Tanaka ,  Tsutomu Sasaki ,  Takayuki Kobayashi ,  Kazuto Kawakami ,  Masayoshi Fujishima

    发明人： Masamoto Tanaka ,  Tsutomu Sasaki ,  Takayuki Kobayashi ,  Kazuto Kawakami ,  Masayoshi Fujishima

    IPC分类号： C22C13/02 ,  C22C13/00

    CPC分类号： C22C13/00 ,  B23K35/26 ,  B23K35/262 ,  H05K3/3463

    摘要： A lead-free solder alloy exhibiting good performance in impact resistance and vibration resistance. Also provided are a solder ball using such a lead-free solder alloy, and an electronic member having a solder bump using such a lead-free alloy. Specifically, the lead-free solder alloy consists of 1.0 to 2.0% by mass of Ag, 0.3 to 1.0% by mass of Cu, 0.005 to 0.1% by mass of Ni and the balance including Sn and unavoidable impurities. In an Sn—Ag—Cu based solder joint portion on a Cu electrode, a Cu3Sn intermetallic compound layer is formed directly on the Cu electrode, and then a Cu6Sn5 intermetallic compound layer is formed thereon. A Cu atomic site in the Cu6Sn5 intermetallic compound layer is replaced by Ni having a smaller atomic radius than Cu to thereby reduce strain in the Cu6Sn5 intermetallic compound layer, thus enabling impact resistance and vibration resistance to be improved therein.

    摘要翻译： 在耐冲击性和抗振性方面表现出良好性能的无铅焊料合金。 还提供了使用这种无铅焊料合金的焊球，以及使用这种无铅合金的具有焊锡凸块的电子部件。 具体地说，无铅焊料合金由1.0〜2.0质量％的Ag，0.3〜1.0质量％的Cu，0.005〜0.1质量％的Ni组成，余量包含Sn和不可避免的杂质。 在Cu电极上的Sn-Ag-Cu基焊料部中，在Cu电极上直接形成Cu 3 Sn金属间化合物层，然后在其上形成Cu6Sn5金属间化合物层。 Cu6Sn5金属间化合物层中的Cu原子位置被原子半径小于Cu的Ni代替，从而减小Cu6Sn5金属间化合物层的应变，从而可以提高耐冲击性和抗振性。

    METAL TAPE MATERIAL AND INTERCONNECTOR FOR SOLAR MODULE CURRENT COLLECTION
    5.
    发明申请
    METAL TAPE MATERIAL AND INTERCONNECTOR FOR SOLAR MODULE CURRENT COLLECTION 有权
    金属胶带材料和太阳能模块电流互连器件

    公开(公告)号：US20130008692A1

    公开(公告)日：2013-01-10

    申请号：US13635216

    申请日：2011-03-17

    申请人： Keiichi Kimura ,  Masamoto Tanaka ,  Wataru Ohashi

    发明人： Keiichi Kimura ,  Masamoto Tanaka ,  Wataru Ohashi

    IPC分类号： H01B5/00 ,  B32B15/01 ,  C22C9/00

    CPC分类号： C22F1/00 ,  B21B1/40 ,  B21B3/00 ,  B21B2267/065 ,  B22F1/0059 ,  B23K35/26 ,  C22C9/00 ,  C22C9/06 ,  C22C13/00 ,  C22C21/00 ,  C22F1/04 ,  C22F1/08 ,  C22F1/14 ,  H01L31/0512 ,  Y02E10/50 ,  Y10T428/12493

    摘要： Provided are a metal tape material improved in characteristics to be low in Young's modulus, low in yield stress and high in break elongation and a metal tape material for semiconductor packaging, such as a current-collection interconnector, comprising the same.The metal tape material comprises a metal having face centered cubic lattice structure, in which metal tape material an area fraction A1 of a preferentially oriented region in which crystal axes of a unit lattice of the face centered cubic structure are within an orientation difference of 15° relative to a thickness direction of the metal tape material and further within an orientation difference of 15° relative to a first in-plane direction of the metal tape material is 60% or greater and not greater than 100%, and, where an area fraction of a preferentially oriented region in which crystal axes of the unit lattice of the face centered cubic structure are within an orientation difference of 15° relative to the thickness direction of the metal tape material and further within an orientation difference of 15° relative to the first in-plane direction of the metal tape material is defined as A2, the total of the area fraction of the preferentially oriented region and the area fraction of the preferentially oriented region, A1+A2, is greater than 70% and not greater than 100%.

    摘要翻译： 本发明提供一种改善了杨氏模量低，屈服应力低，断裂伸长率高的特性的金属带材和用于半导体封装的金属带材料，例如集流互连器。 金属带材料包括具有面心立方晶格结构的金属，其中金属带材料是面心立方结构的单位晶格的晶轴<100>的优先<100取向区域的​​面积分数A1 相对于金属带材料的厚度方向的取向差为15°，并且相对于金属带材的第一面内方向为15°以内的取向差为60％以上且100％以下， 并且其中面心立方结构的单位晶格的晶轴<212>的优先<212>取向区域的​​面积分数在相对于金属带材料的厚度方向为15°的取向差之内，以及 进一步在相对于金属带材料的第一面内方向15°的取向差定义为A2时，优选方位角的面积分数的总和 d区域，优选<100>取向区域A1 + A2的面积分数大于70％且不大于100％。

    Oxide superconductor and process for preparation thereof
    6.
    发明授权
    Oxide superconductor and process for preparation thereof 失效
    氧化物超导体及其制备方法

    公开(公告)号：US5308799A

    公开(公告)日：1994-05-03

    申请号：US834554

    申请日：1992-02-06

    申请人： Mitsuru Morita ,  Keiichi Kimura ,  Katsuyoshi Miyamoto ,  Kiyoshi Sawano ,  Seiki Takebayashi ,  Masamoto Tanaka

    发明人： Mitsuru Morita ,  Keiichi Kimura ,  Katsuyoshi Miyamoto ,  Kiyoshi Sawano ,  Seiki Takebayashi ,  Masamoto Tanaka

    IPC分类号： C04B35/45 ,  C04B35/653 ,  C30B11/00 ,  H01L39/12 ,  C01F11/02 ,  C01F17/00 ,  C01G3/02

    CPC分类号： H01L39/2419 ,  C04B35/4508 ,  C04B35/653 ,  C30B11/00 ,  C30B29/225 ,  H01L39/128 ,  Y10S505/778 ,  Y10S505/779 ,  Y10S505/78 ,  Y10S505/785

    摘要： The present invention relates to an oxide superconductor comprising a composite oxide of RE , Ba and Cu, wherein the superconductor comprises a micro structure comprised of a monocrystalline REBa.sub.2 Cu.sub.3 O.sub.7-x phase (123 phase) and a RE.sub.2 BaCuO.sub.5 phase (211 phase) finely dispersed therein, the 123 phase being formed in a plurality of domains respectively for individual RE compositions and in the order of the 123 phase forming temperatures in respective layers. The present invention relates also to a process for the preparation of an oxide superconductor, characterized by forming a layer from a mixed powder of the RE, Ba and Cu compounds, forming another layer(s) of a mixed powder of RE, Ba and Cu compounds having another RE composition(s) different from the above-mentioned RE composition in the 123 phase forming temperature to form a multi layer structure, putting said plurality of layers on top of one another so that the 123 phase forming temperatures in respective layers continue towards a higher temperature side or a lower temperature side, subjecting the assembly to press molding to form a precursor, putting said precursor on a supporting material with the layer having the highest 123 phase forming temperature being located at the highest position, heating said precursor to a temperature range in a solid liquid coexisting region to bring said precursor into a semi molten state, and either gradually cooling said precursor in a 123 phase temperature range or inoculating the precursor with a seed crystal and gradually cooling the inoculated precursor in the above mentioned temperature range to grow a 123 phase crystal at a growth rate of 5 mm/hr or less.

    摘要翻译： PCT No.PCT / JP91 / 00769 Sec。 371日期：1992年2月6日 102（e）日期1992年2月6日PCT PCT 1991年6月7日PCT公布。 第WO91 / 19029号公报 1991年12月12日。本发明涉及包含RE，Ba和Cu的复合氧化物的氧化物超导体，其中超导体包括由单晶REBa2Cu3O7-x相（123相）和RE2BaCuO5相（ 211相），123相分别形成在多个畴中，用于单独的RE组合物，并且在相应层中以123相形成温度的顺序形成。 本发明还涉及制备氧化物超导体的方法，其特征在于由RE，Ba和Cu化合物的混合粉末形成层，形成RE，Ba和Cu的混合粉末的另一层 在123相形成温度中具有与上述RE组合物不同的另一种RE组合物的化合物以形成多层结构，将所述多个层彼此顶起，使得各层中的123相形成温度继续 朝向较高温度侧或较低温度侧，对组件进行压制成型以形成前体，将所述前体放置在支撑材料上，其中具有最高123相位形成温度的层位于最高位置，将所述前体加热至 固体液体共存区域中的温度范围，以使所述前体进入半熔融状态，并且逐渐地将所述前体在123相t 温度范围或用晶种接种前体，并在上述温度范围内逐渐冷却接种的前体，以生长速度为5mm /小时以下生长123相晶体。

    Solder alloy, solder ball and electronic member having solder bump
    9.
    发明授权
    Solder alloy, solder ball and electronic member having solder bump 失效
    焊锡合金，焊球和具有焊锡凸块的电子部件

    公开(公告)号：US08501088B2

    公开(公告)日：2013-08-06

    申请号：US12345942

    申请日：2008-12-30

    申请人： Takayuki Kobayashi ,  Tsutomu Sasaki ,  Masamoto Tanaka ,  Katsuichi Kimura

    发明人： Takayuki Kobayashi ,  Tsutomu Sasaki ,  Masamoto Tanaka ,  Katsuichi Kimura

    IPC分类号： C22C13/00

    CPC分类号： B23K35/262 ,  B23K2101/36 ,  C22C13/00 ,  C22C13/02 ,  H05K3/3463

    摘要： To provide a solder alloy, a solder ball and an electronic member having a solder bump, used for connection with a mother board or the like, having a melting temperature of less than 250° C. for the solder alloy, achieving high drop impact resistance required in mobile devices or the like. A solder alloy is used which consists of not less than 0.1 mass ppm of boron and not greater than 200 mass ppm of boron and a remainder comprising substantially not less than 40% by mass of Sn, in which its melting temperature is less than 250° C.

    摘要翻译： 为了提供用于焊料合金的熔融温度低于250℃的焊料合金，焊球和具有用于与母板等连接的焊料凸块的电子部件，实现高的耐跌落冲击强度 在移动设备等中需要。 使用焊料合金，其由不低于0.1质量ppm的硼和不大于200质量ppm的硼组成，剩余部分包含基本上不小于40质量％的Sn，其中其熔化温度低于250℃ C。