Electron beam irradiation apparatus

    公开(公告)号:US09601224B2

    公开(公告)日:2017-03-21

    申请号:US14785091

    申请日:2014-04-09

    CPC classification number: G21K5/04 A61L2/087 A61L2202/23 B65B55/08 G21K5/00

    Abstract: An electron beam irradiation apparatus that emits an electron beam into a container, the electron beam irradiation apparatus including: a vacuum housing constituting a vacuum chamber; an electron generator provided in the vacuum housing; a cylindrical nozzle member that is extended from the vacuum housing so as to be inserted into the container and has exit windows on the distal end of the nozzle member, the exit windows being provided for emission of an electron beam generated by the electron generator into the container; and a magnetic shield member for the vacuum chamber and a magnetic shield member for the nozzle member, the magnetic shield members being respectively provided for the vacuum housing and the nozzle member so as to block variable magnetism generated around an electron beam trajectory extended from the electron generator to the exit windows.

    EXTREME ULTRAVIOLET LIGHT GENERATION APPARATUS
    97.
    发明申请
    EXTREME ULTRAVIOLET LIGHT GENERATION APPARATUS 审中-公开
    极光紫外线发光装置

    公开(公告)号:US20170064800A1

    公开(公告)日:2017-03-02

    申请号:US15347241

    申请日:2016-11-09

    Abstract: An apparatus for generating extreme ultraviolet light used with a laser apparatus and connected to an external device so as to supply the extreme ultraviolet light thereto includes a chamber provided with at least one inlet through which a laser beam is introduced into the chamber; a target supply unit provided on the chamber configured to supply a target material to a predetermined region inside the chamber; a discharge pump connected to the chamber; at least one optical element provided inside the chamber; an etching gas introduction unit provided on the chamber through which an etching gas passes; and at least one temperature control mechanism for controlling a temperature of the at least one optical element.

    Abstract translation: 一种用于产生与激光装置并且连接到外部装置以便提供极紫外光的极紫外光的装置,包括设置有至少一个入口的腔室,激光束通过该入口引入腔室; 设置在所述室上的目标供给单元,其构造成将目标材料供应到所述室内的预定区域; 连接到所述室的排出泵; 设置在所述室内的至少一个光学元件; 蚀刻气体导入单元,设置在所述室上,蚀刻气体通过所述蚀刻气体导入单元; 以及用于控制所述至少一个光学元件的温度的至少一个温度控制机构。

    ELECTRON BEAM APPARATUS WITH ADJUSTABLE AIR GAP
    98.
    发明申请
    ELECTRON BEAM APPARATUS WITH ADJUSTABLE AIR GAP 审中-公开
    电子束设备与可调节的空气隙

    公开(公告)号:US20170062172A1

    公开(公告)日:2017-03-02

    申请号:US15246821

    申请日:2016-08-25

    CPC classification number: G21K5/00 G21K5/02

    Abstract: An electron beam processing apparatus for treating a substrate is provided. The apparatus has an electron beam generating assembly housed in a chamber that includes a filament for generating a plurality of electrons upon heating. The apparatus may also have a foil support assembly that is configured to direct the plurality of electrons through a thin foil out of the chamber. The apparatus may further have a processing assembly that is configured to pass the substrate by the thin foil so that the plurality of electrons penetrates the substrate and cause a chemical reaction. A distance of an air gap between the thin foil and the substrate may be adjustable.

    Abstract translation: 提供了一种用于处理基板的电子束处理装置。 该装置具有容纳在包括用于在加热时产生多个电子的细丝的室中的电子束产生组件。 该装置还可以具有箔支撑组件,其被配置成将多个电子引导通过薄膜离开室。 该设备还可以具有处理组件,该处理组件被配置为通过薄箔使衬底通过,使得多个电子穿透衬底并引起化学反应。 薄箔和基板之间的气隙的距离可以是可调节的。

    System and method for imaging a sample with a laser sustained plasma illumination output
    99.
    发明授权
    System and method for imaging a sample with a laser sustained plasma illumination output 有权
    用激光持续等离子体照明输出成像样品的系统和方法

    公开(公告)号:US09558858B2

    公开(公告)日:2017-01-31

    申请号:US14459155

    申请日:2014-08-13

    CPC classification number: G21K5/00

    Abstract: The inspection of a sample with VUV light from a laser sustained plasma includes generating pumping illumination including a first selected wavelength, or range of wavelength, containing a volume of gas suitable for plasma generation, generating broadband radiation including a second selected wavelength, or range of wavelengths, by forming a plasma within the volume of gas by focusing the pumping illumination into the volume of gas, illuminating a surface of a sample with the broadband radiation emitted from the plasma via an illumination pathway, collecting illumination from a surface of the sample, focusing the collected illumination onto a detector via a collection pathway to form an image of at least a portion of the surface of the sample and purging the illumination pathway and/or the collection pathway with a selected purge gas.

    Abstract translation: 使用来自激光持续等离子体的VUV光检测样品包括产生包括第一选定波长或波长范围的泵浦照明,其包含适于等离子体产生的气体体积,产生包括第二选定波长的宽度辐射或范围 通过将泵浦照明聚焦到气体体积中,通过将等离子体聚焦在气体体积中,利用从等离子体经由照明路径发射的宽带辐射来照射样品的表面,从样品的表面收集照明, 通过收集路径将收集的照明聚焦到检测器上,以形成样品表面的至少一部分的图像,并用所选择的吹扫气体吹扫照明路径和/或收集路径。

    Method for Integrated Circuit Manufacturing
    100.
    发明申请
    Method for Integrated Circuit Manufacturing 有权
    集成电路制造方法

    公开(公告)号:US20170004242A1

    公开(公告)日:2017-01-05

    申请号:US14754769

    申请日:2015-06-30

    Abstract: A method of manufacturing an integrated circuit (IC) includes: receiving a target layout of the IC, decomposing the target layout into a plurality of sub-layouts for a multiple patterning process, identifying re-locatable pattern edges in the sub-layouts, and relocating the edges to improve manufacturability of the IC. In an embodiment, relocating the edges includes: choosing an evaluation index based on a target manufacturing process, moving one or more of the edges, calculating a score of manufacturability based on the evaluation index, and repeating the moving and the calculating until the score meets a threshold.

    Abstract translation: 一种制造集成电路(IC)的方法包括:接收IC的目标布局,将目标布局分解为用于多个图案化处理的多个子布局,识别子布局中的可重新定位的图案边缘;以及 重新定位边缘以提高IC的可制造性。 在一个实施例中,重新定位边缘包括:基于目标制造过程选择评估指标,移动一个或多个边缘,基于评估指标计算可制造性的分数,并重复移动和计算,直到得分满足 一个门槛。

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