Abstract:
A method of includes determining a first set of width bias values of an i-th set of layout patterns of an original layout according a first type width variation. The original layout has N sets of layout patterns corresponding to N masks, where the i-th set of layout patterns has an i-th mask assignment corresponding to an i-th mask of the N masks. The order index i is an integer from 1 to N, and N is an integer and greater than 1. A second set of width bias values of the i-th set of layout patterns of the original layout is determined according to a second type width variation. The modified layout is generated based on the first and second sets of width bias values of the i-th set of layout patterns.
Abstract:
A method and a system for producing a change in a medium disposed in an artificial container. The method places in a vicinity of the medium at least one of a plasmonics agent and an energy modulation agent. The method applies an initiation energy through the artificial container to the medium. The initiation energy interacts with the plasmonics agent or the energy modulation agent to directly or indirectly produce the change in the medium. The system includes an initiation energy source configured to apply an initiation energy to the medium to activate the plasmonics agent or the energy modulation agent.
Abstract:
A method of manufacturing an integrated circuit (IC) includes: receiving a target layout of the IC, decomposing the target layout into a plurality of sub-layouts for a multiple patterning process, identifying re-locatable pattern edges in the sub-layouts, and relocating the edges to improve manufacturability of the IC. In an embodiment, relocating the edges includes: choosing an evaluation index based on a target manufacturing process, moving one or more of the edges, calculating a score of manufacturability based on the evaluation index, and repeating the moving and the calculating until the score meets a threshold.
Abstract:
A method and a system for producing a change in a medium disposed in an artificial container. The method places in a vicinity of the medium at least one of a plasmonics agent and an energy modulation agent. The method applies an initiation energy through the artificial container to the medium. The initiation energy interacts with the plasmonics agent or the energy modulation agent to directly or indirectly produce the change in the medium. The system includes an initiation energy source configured to apply an initiation energy to the medium to activate the plasmonics agent or the energy modulation agent.
Abstract:
An apparatus for producing light includes a chamber and an ignition source that ionizes a gas within the chamber. The apparatus also includes at least one laser that provides energy to the ionized gas within the chamber to produce a high brightness light. The laser can provide a substantially continuous amount of energy to the ionized gas to generate a substantially continuous high brightness light.
Abstract:
An electron beam irradiation apparatus that emits an electron beam into a container, the electron beam irradiation apparatus including: a vacuum housing constituting a vacuum chamber; an electron generator provided in the vacuum housing; a cylindrical nozzle member that is extended from the vacuum housing so as to be inserted into the container and has exit windows on the distal end of the nozzle member, the exit windows being provided for emission of an electron beam generated by the electron generator into the container; and a magnetic shield member for the vacuum chamber and a magnetic shield member for the nozzle member, the magnetic shield members being respectively provided for the vacuum housing and the nozzle member so as to block variable magnetism generated around an electron beam trajectory extended from the electron generator to the exit windows.
Abstract:
An apparatus for generating extreme ultraviolet light used with a laser apparatus and connected to an external device so as to supply the extreme ultraviolet light thereto includes a chamber provided with at least one inlet through which a laser beam is introduced into the chamber; a target supply unit provided on the chamber configured to supply a target material to a predetermined region inside the chamber; a discharge pump connected to the chamber; at least one optical element provided inside the chamber; an etching gas introduction unit provided on the chamber through which an etching gas passes; and at least one temperature control mechanism for controlling a temperature of the at least one optical element.
Abstract:
An electron beam processing apparatus for treating a substrate is provided. The apparatus has an electron beam generating assembly housed in a chamber that includes a filament for generating a plurality of electrons upon heating. The apparatus may also have a foil support assembly that is configured to direct the plurality of electrons through a thin foil out of the chamber. The apparatus may further have a processing assembly that is configured to pass the substrate by the thin foil so that the plurality of electrons penetrates the substrate and cause a chemical reaction. A distance of an air gap between the thin foil and the substrate may be adjustable.
Abstract:
The inspection of a sample with VUV light from a laser sustained plasma includes generating pumping illumination including a first selected wavelength, or range of wavelength, containing a volume of gas suitable for plasma generation, generating broadband radiation including a second selected wavelength, or range of wavelengths, by forming a plasma within the volume of gas by focusing the pumping illumination into the volume of gas, illuminating a surface of a sample with the broadband radiation emitted from the plasma via an illumination pathway, collecting illumination from a surface of the sample, focusing the collected illumination onto a detector via a collection pathway to form an image of at least a portion of the surface of the sample and purging the illumination pathway and/or the collection pathway with a selected purge gas.
Abstract:
A method of manufacturing an integrated circuit (IC) includes: receiving a target layout of the IC, decomposing the target layout into a plurality of sub-layouts for a multiple patterning process, identifying re-locatable pattern edges in the sub-layouts, and relocating the edges to improve manufacturability of the IC. In an embodiment, relocating the edges includes: choosing an evaluation index based on a target manufacturing process, moving one or more of the edges, calculating a score of manufacturability based on the evaluation index, and repeating the moving and the calculating until the score meets a threshold.