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    SEMICONDUCTOR LIGHT EMITTING ELEMENT
    102.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING ELEMENT 审中-公开
    半导体发光元件

    公开(公告)号：US20090059986A1

    公开(公告)日：2009-03-05

    申请号：US12039303

    申请日：2008-02-28

    Applicant: Koichi TACHIBANA ,  Shinji SAITO ,  Shinya NUNOUE ,  Haruhiko YOSHIDA

    Inventor： Koichi TACHIBANA ,  Shinji SAITO ,  Shinya NUNOUE ,  Haruhiko YOSHIDA

    IPC: H01S5/30

    CPC classification number: H01S5/34333 ,  B82Y20/00 ,  H01S5/22 ,  H01S5/2214 ,  H01S5/2218 ,  H01S2301/18

    Abstract: A semiconductor light emitting element includes a first clad layer of a first conductivity type provided on a substrate; an active layer provided on the first clad layer; a second clad layer of a second conductivity type provided on the active layer, an upper portion of the second clad layer implements a ridge extending in a predetermined direction; a pair of first current block layers provided on the second clad layer sandwiching the ridge along the extending direction; and a pair of second current block layers provided between the first current block layers on the second clad layer and at sidewalls of the ridge to be contacted with the first current block layers, sandwiching selectively a region including an edge of the ridge, the second current block layers having a refractive index larger than the first current block layers at an emission peak wavelength of the active layer.

    Abstract translation: 半导体发光元件包括设置在基板上的第一导电类型的第一覆盖层; 设置在所述第一包层上的有源层; 设置在所述有源层上的第二导电类型的第二覆盖层，所述第二覆层的上部实现沿预定方向延伸的脊; 一对第一电流阻挡层，设置在沿所述延伸方向夹着所述脊的所述第二覆层上; 以及一对第二电流阻挡层，设置在所述第二覆盖层上的所述第一电流阻挡层之间并且在所述脊的侧壁处与所述第一电流阻挡层接触，选择性地夹持包括所述脊的边缘的区域，所述第二电流 在有源层的发射峰值波长处具有大于第一电流阻挡层的折射率的阻挡层。

    LIGHT-EMITTING DEVICE
    103.
    发明申请
    LIGHT-EMITTING DEVICE 有权
    发光装置

    公开(公告)号：US20090058256A1

    公开(公告)日：2009-03-05

    申请号：US12143382

    申请日：2008-06-20

    Applicant: Iwao MITSUISHI ,  Shinya NUNOUE ,  Yasushi HATTORI

    Inventor： Iwao MITSUISHI ,  Shinya NUNOUE ,  Yasushi HATTORI

    IPC: H01J1/62

    CPC classification number: H01L33/504 ,  H01L2224/45144 ,  H01L2224/48247 ,  H01L2924/00

    Abstract: A light-emitting device is provided, which includes a package having a first portion and a second portion surrounding it, a semiconductor light-emitting element mounted on the first portion and emitting a light having an emission peak in a near-ultraviolet region, a transparent resin layer covering the semiconductor light-emitting element and contacted with the package, and a laminated body formed on the transparent resin layer with end faces of the laminated body being contacted with the second portion. The transparent resin layer has an arch-like outer profile perpendicular cross section. The laminated body has an arch-like outer profile in perpendicular cross section and comprises a red fluorescent layer, a yellow fluorescent layer, a green fluorescent layer and a blue fluorescent layer laminated in the mentioned order. The yellow fluorescent layer has a top portion which is made larger in thickness than that of the end face portions thereof.

    Abstract translation: 提供了一种发光器件，其包括具有第一部分和围绕其的第二部分的封装，安装在第一部分上并发射在近紫外区域具有发射峰的光的半导体发光元件， 覆盖半导体发光元件并与封装物接触的透明树脂层和形成在透明树脂层上的层叠体，层叠体的端面与第二部分接触。 透明树脂层具有拱形外形垂直横截面。 层叠体具有垂直截面的拱形外部轮廓，并且包括以上述顺序层压的红色荧光层，黄色荧光层，绿色荧光层和蓝色荧光体层。 黄色荧光层具有比其端面部分的厚度大的顶部。

    LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME
    104.
    发明申请
    LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
    发光装置及其制造方法

    公开(公告)号：US20090052159A1

    公开(公告)日：2009-02-26

    申请号：US12195536

    申请日：2008-08-21

    Applicant: Saori Abe ,  Toshiyuki Oka ,  Shinya Nunoue

    Inventor： Saori Abe ,  Toshiyuki Oka ,  Shinya Nunoue

    IPC: F21V9/16 ,  G02B5/04

    CPC classification number: G02B6/107 ,  B82Y20/00 ,  G02B3/0037 ,  G02B6/132 ,  G02B6/4207 ,  H01L33/20 ,  H01L33/42 ,  H01L33/44 ,  H01L2933/0083

    Abstract: A light-emitting device includes a support substrate which includes a light-emitting layer and a light extraction surface, and a light transmission layer, formed on the light extraction surface of the support substrate, having a periodic refractive index distribution structure in an in-plane direction and a thickness direction, the light transmission layer including a plurality of projections formed of a having a refractive index lower than that of the support substrate.

    Abstract translation: 发光装置包括：支撑基板，其包括发光层和光提取表面;以及透光层，形成在支撑基板的光提取表面上，具有周期性的折射率分布结构， 平面方向和厚度方向，所述光透射层包括由折射率低于所述支撑基板的折射率形成的多个突起。

    SEMICONDUCTOR DEVICE
    105.
    发明申请
    SEMICONDUCTOR DEVICE 失效
    半导体器件

    公开(公告)号：US20080151957A1

    公开(公告)日：2008-06-26

    申请号：US12036409

    申请日：2008-02-25

    Applicant: Koichi Tachibana ,  Chie Hongo ,  Hajime Nago ,  Shinya Nunoue

    Inventor： Koichi Tachibana ,  Chie Hongo ,  Hajime Nago ,  Shinya Nunoue

    IPC: H01S5/343

    CPC classification number: H01L33/0075 ,  B82Y20/00 ,  H01L33/02 ,  H01L33/305 ,  H01S5/2009 ,  H01S5/22 ,  H01S5/2224 ,  H01S5/3063 ,  H01S5/3072 ,  H01S5/3216 ,  H01S5/34333 ,  H01S2304/04 ,  Y10S257/918

    Abstract: A semiconductor device has an active layer, a first semiconductor layer of first conductive type, an overflow prevention layer disposed between the active layer and the first semiconductor layer, which is doped with impurities of first conductive type and which prevents overflow of electrons or holes, a second semiconductor layer of first conductive type disposed at least one of between the active layer and the overflow prevention layer and between the overflow prevention layer and the first semiconductor layer, and an impurity diffusion prevention layer disposed between the first semiconductor layer and the active layer, which has a band gap smaller than those of the overflow prevention layer, the first semiconductor layer and the second semiconductor layer and which prevents diffusion of impurities of first conductive type.

    Abstract translation: 半导体器件具有有源层，第一导电类型的第一半导体层，设置在有源层和第一半导体层之间的防溢出层，其被掺杂有第一导电类型的杂质并且防止电子或空穴溢出， 第一导电类型的第二半导体层设置在有源层和溢出防止层之间以及溢出防止层和第一半导体层之间的至少之一以及设置在第一半导体层和有源层之间的杂质扩散防止层 其具有比溢出防止层，第一半导体层和第二半导体层的带隙小的带隙，并且防止第一导电类型的杂质的扩散。

    Semiconductor device
    107.
    发明申请
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US20070096142A1

    公开(公告)日：2007-05-03

    申请号：US11511337

    申请日：2006-08-29

    Applicant: Koichi Tachibana ,  Chie Hongo ,  Hajime Nago ,  Shinya Nunoue

    Inventor： Koichi Tachibana ,  Chie Hongo ,  Hajime Nago ,  Shinya Nunoue

    IPC: H01L33/00 ,  H01L29/24

    CPC classification number: H01L33/0075 ,  B82Y20/00 ,  H01L33/02 ,  H01L33/305 ,  H01S5/2009 ,  H01S5/22 ,  H01S5/2224 ,  H01S5/3063 ,  H01S5/3072 ,  H01S5/3216 ,  H01S5/34333 ,  H01S2304/04 ,  Y10S257/918

    Abstract: A semiconductor device has an active layer, a first semiconductor layer of first conductive type, an overflow prevention layer disposed between the active layer and the first semiconductor layer, which is doped with impurities of first conductive type and which prevents overflow of electrons or holes, a second semiconductor layer of first conductive type disposed at least one of between the active layer and the overflow prevention layer and between the overflow prevention layer and the first semiconductor layer, and an impurity diffusion prevention layer disposed between the first semiconductor layer and the active layer, which has a band gap smaller than those of the overflow prevention layer, the first semiconductor layer and the second semiconductor layer and which prevents diffusion of impurities of first conductive type.

    Abstract translation: 半导体器件具有有源层，第一导电类型的第一半导体层，设置在有源层和第一半导体层之间的防溢出层，其被掺杂有第一导电类型的杂质并且防止电子或空穴溢出， 第一导电类型的第二半导体层设置在有源层和溢出防止层之间以及溢出防止层和第一半导体层之间的至少之一以及设置在第一半导体层和有源层之间的杂质扩散防止层 其具有比溢出防止层，第一半导体层和第二半导体层的带隙小的带隙，并且防止第一导电类型的杂质的扩散。

    Nitride compound semiconductor light emitting device
    109.
    发明授权
    Nitride compound semiconductor light emitting device 失效
    氮化物半导体发光元件

    公开(公告)号：US06242761B1

    公开(公告)日：2001-06-05

    申请号：US09026941

    申请日：1998-02-20

    Applicant: Hidetoshi Fujimoto ,  John Rennie ,  Masahiro Yamamoto ,  Masayuki Ishikawa ,  Shinya Nunoue ,  Lisa Sugiura

    Inventor： Hidetoshi Fujimoto ,  John Rennie ,  Masahiro Yamamoto ,  Masayuki Ishikawa ,  Shinya Nunoue ,  Lisa Sugiura

    IPC: H01L2972

    CPC classification number: H01L33/145 ,  H01L33/32 ,  H01S5/2205 ,  H01S5/2206 ,  H01S5/2214 ,  H01S5/2226 ,  H01S5/2231 ,  H01S5/32341

    Abstract: In order to remove the problems in conventional nitride compound semiconductor laser structures, namely, high operation voltage caused by a high resistance in a p-type layer and a high contact resistance of an electrode, damage to the crystal caused by dry etching, insufficient current injection, and the need for a high current density, a nitride compound semiconductor light emitting device has current blocking layers made of n-type B(1−x−y−z)InxAlyGazN (0≦x≦1, 0≦y≦1, 0≦z≦1) single crystal containing an oxide of a predetermined metal, carbon and impurities exhibiting p-type and n-type conductivity, or i-type B(1−x−y−z)InxAlyGazN (0≦x≦1, 0≦y≦1, 0≦z≦1) single crystal in which carriers are inactivated by hydrogen or oxygen to realize an internal current blocking structure without the need for dry etching. By applying a reverse bias voltage, the semiconductor can be activated only along a current path, and the remainder region is utilized as a current blocking layer. When the n-side electrode has a unique three-layered structure, a reduction in contact resistance and good wire bonding are promised.

    Abstract translation: 为了消除常规氮化物化合物半导体激光器结构中的问题，即由p型层中的高电阻引起的高操作电压和电极的高接触电阻，由干蚀刻引起的晶体损坏，电流不足 注入，并且需要高电流密度，氮化物化合物半导体发光器件具有由n型B（1-xyz）In x AlyGazN（0≤x≤1,0<= y <= 1）形成的电流阻挡层 ，0 <= z <= 1）含有预定金属的氧化物的单晶，碳和表现出p型和n型导电性的杂质，或i型B（1-xyz）In x AlyGazN（0 <= x < 1，0 <= y <= 1，0 <= z <= 1）其中载体被氢或氧灭活以实现内部电流阻挡结构而不需要干法蚀刻的单晶。 通过施加反向偏置电压，半导体只能沿着电流路径被激活，并且剩余区域被用作电流阻挡层。 当n侧电极具有独特的三层结构时，承诺了接触电阻的降低和良好的引线接合。

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