公开(公告)号：US20160225651A1

公开(公告)日：2016-08-04

申请号：US14612472

申请日：2015-02-03

Applicant: Applied Materials, Inc.

Inventor： Toan Q. Tran ,  Sultan Malik ,  Dmitry Lubomirsky ,  Shambhu N. Roy ,  Satoru Kobayashi ,  Tae Seung Cho ,  Soonam Park ,  Shankar Venkataraman

IPC: H01L21/683 ,  H01L21/67 ,  H01L21/3065

CPC classification number: H01L21/6833 ,  H01L21/3065 ,  H01L21/67103

Abstract: A wafer chuck assembly includes a puck, a shaft and a base. An insulating material defines a top surface of the puck, a heater element is embedded within the insulating material, and a conductive plate lies beneath the insulating material. The shaft includes a housing coupled with the plate, and electrical connectors for the heater elements and the electrodes. A conductive base housing couples with the shaft housing, and the connectors pass through a terminal block within the base housing. A method of plasma processing includes loading a workpiece onto a chuck having an insulating top surface, providing a DC voltage differential across two electrodes within the top surface, heating the chuck by passing current through heater elements, providing process gases in a chamber surrounding the chuck, and providing an RF voltage between a conductive plate beneath the chuck, and one or more walls of the chamber.

Abstract translation: 晶片卡盘组件包括圆盘，轴和基座。 绝缘材料限定了圆盘的顶表面，加热元件嵌入绝缘材料内，导电板位于绝缘材料的下方。 轴包括与板连接的壳体，以及用于加热器元件和电极的电连接器。 导电基座壳体与轴壳体耦合，并且连接器穿过基座壳体内的端子块。 等离子体处理的方法包括将工件加载到具有绝缘顶表面的卡盘上，在顶表面内的两个电极之间提供直流电压差，通过使电流通过加热器元件来加热卡盘，在围绕卡盘的腔室中提供工艺气体 并且在卡盘下方的导电板与腔室的一个或多个壁之间提供RF电压。

公开(公告)号：US09299538B2

公开(公告)日：2016-03-29

申请号：US14221146

申请日：2014-03-20

Applicant: Applied Materials, Inc.

Inventor： Satoru Kobayashi ,  Soonam Park ,  Dmitry Lubomirsky

IPC: H01J7/24 ,  H01J37/32 ,  H01J37/244

CPC classification number: H01J37/32201 ,  H01J7/24 ,  H01J37/244 ,  H01J37/32229 ,  H01J37/32302 ,  H01J37/32311 ,  H01J37/32935 ,  H01J37/3299

Abstract: A system provides post-match control of microwaves in a radial waveguide. The system includes the radial waveguide, and a signal generator that provides first and second microwave signals that have a common frequency. The signal generator adjusts a phase offset between the first and second signals in response to a correction signal. The system also includes first and second electronics sets, each of which amplifies a respective one of the first and second microwave signals. The system transmits the amplified, first and second microwave signals into the radial waveguide, and matches an impedance of the amplified microwave signals to an impedance presented by the waveguide. The system also includes at least two monitoring antennas disposed within the waveguide. A signal controller receives analog signals from the monitoring antennas, determines the digital correction signal based at least on the analog signals, and transmits the correction signal to the signal generator.

公开(公告)号：US20160064233A1

公开(公告)日：2016-03-03

申请号：US14936448

申请日：2015-11-09

Applicant: Applied Materials, Inc.

Inventor： Anchuan Wang ,  Xinglong Chen ,  Zihui Li ,  Hiroshi Hamana ,  Zhijun Chen ,  Ching-Mei Hsu ,  Jiayin Huang ,  Nitin K. Ingle ,  Dmitry Lubomirsky ,  Shankar Venkataraman ,  Randhir Thakur

IPC: H01L21/3065

CPC classification number: H01L21/324 ,  C23C16/4405 ,  H01J37/32357 ,  H01J37/32862 ,  H01L21/02041 ,  H01L21/02057 ,  H01L21/0206 ,  H01L21/263 ,  H01L21/2686 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/3105 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/32136 ,  H01L21/32137 ,  H01L21/67069 ,  H01L21/67075 ,  H01L21/6708 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/67184 ,  H01L21/6719 ,  H01L21/67196 ,  H01L21/67201 ,  H01L21/67207 ,  H01L21/67248 ,  H01L21/67253 ,  H01L21/67288 ,  H01L21/67703 ,  H01L21/67739 ,  H01L21/67742 ,  H01L21/6831

Abstract: Systems, chambers, and processes are provided for controlling process defects caused by moisture contamination. The systems may provide configurations for chambers to perform multiple operations in a vacuum or controlled environment. The chambers may include configurations to provide additional processing capabilities in combination chamber designs. The methods may provide for the limiting, prevention, and correction of aging defects that may be caused as a result of etching processes performed by system tools.

公开(公告)号：US09212099B2

公开(公告)日：2015-12-15

申请号：US13745589

申请日：2013-01-18

Applicant: Applied Materials, Inc.

Inventor： Jennifer Y. Sun ,  Ren-Guan Duan ,  Biraja P. Kanungo ,  Dmitry Lubomirsky

IPC: C04B41/00 ,  C04B41/80 ,  C04B41/89 ,  C04B41/52

CPC classification number: C04B41/87 ,  C04B41/0072 ,  C04B41/009 ,  C04B41/5025 ,  C04B41/5032 ,  C04B41/5042 ,  C04B41/5045 ,  C04B41/52 ,  C04B41/80 ,  C04B41/89 ,  Y10T428/249988 ,  Y10T428/265 ,  C04B35/00 ,  C04B35/10 ,  C04B41/4556

Abstract: A ceramic article having a ceramic substrate and a ceramic coating with an initial porosity and an initial amount of cracking is provided. The ceramic article is heated to a temperature range between about 1000° C. and about 1800° C. at a ramping rate of about 0.1° C. per minute to about 20° C. per minute. The ceramic article is heat treated at one or more temperatures within the temperature range for a duration of up to about 24 hours. The ceramic article is then cooled at the ramping rate, wherein after the heat treatment the ceramic coating has a reduced porosity and a reduced amount of cracking.

Abstract translation: 提供具有陶瓷基底和具有初始孔隙率和初始裂纹量的陶瓷涂层的陶瓷制品。 陶瓷制品以约0.1℃/分钟至约20℃/分钟的升温速率加热至约1000℃至约1800℃的温度范围。 陶瓷制品在一个或多个温度范围内在高达约24小时的持续时间内进行热处理。 然后将陶瓷制品以升高速度冷却，其中在热处理后，陶瓷涂层具有降低的孔隙率和减少的开裂量。

公开(公告)号：US09184055B2

公开(公告)日：2015-11-10

申请号：US14246952

申请日：2014-04-07

Applicant: APPLIED MATERIALS, INC.

Inventor： Anchuan Wang ,  Xinglong Chen ,  Zihui Li ,  Hiroshi Hamana ,  Zhijun Chen ,  Ching-Mei Hsu ,  Jiayin Huang ,  Nitin K. Ingle ,  Dmitry Lubomirsky ,  Shankar Venkataraman ,  Randhir Thakur

IPC: H01L21/263 ,  H01L21/02 ,  H01L21/67 ,  C23C16/44 ,  H01L21/677 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/683 ,  H01L21/3213 ,  H01L21/311 ,  H01J37/32

CPC classification number: H01L21/324 ,  C23C16/4405 ,  H01J37/32357 ,  H01J37/32862 ,  H01L21/02041 ,  H01L21/02057 ,  H01L21/0206 ,  H01L21/263 ,  H01L21/2686 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/3105 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/32136 ,  H01L21/32137 ,  H01L21/67069 ,  H01L21/67075 ,  H01L21/6708 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/67184 ,  H01L21/6719 ,  H01L21/67196 ,  H01L21/67201 ,  H01L21/67207 ,  H01L21/67248 ,  H01L21/67253 ,  H01L21/67288 ,  H01L21/67703 ,  H01L21/67739 ,  H01L21/67742 ,  H01L21/6831

Abstract: Systems, chambers, and processes are provided for controlling process defects caused by moisture contamination. The systems may provide configurations for chambers to perform multiple operations in a vacuum or controlled environment. The chambers may include configurations to provide additional processing capabilities in combination chamber designs. The methods may provide for the limiting, prevention, and correction of aging defects that may be caused as a result of etching processes performed by system tools.

Abstract translation: 提供系统，室和过程以控制由水分污染引起的过程缺陷。 这些系统可以提供腔室的配置，以在真空或受控环境中执行多个操作。 腔室可以包括在组合腔室设计中提供附加处理能力的构造。 这些方法可以提供由系统工具执行的蚀刻工艺可能引起的老化缺陷的限制，预防和校正。

公开(公告)号：US20150270106A1

公开(公告)日：2015-09-24

申请号：US14221146

申请日：2014-03-20

Applicant: Applied Materials, Inc.

Inventor： Satoru Kobayashi ,  Soonam Park ,  Dmitry Lubomirsky

IPC: H01J37/32 ,  H01J37/244

CPC classification number: H01J37/32201 ,  H01J7/24 ,  H01J37/244 ,  H01J37/32229 ,  H01J37/32302 ,  H01J37/32311 ,  H01J37/32935 ,  H01J37/3299

Abstract: A system provides post-match control of microwaves in a radial waveguide. The system includes the radial waveguide, and a signal generator that provides first and second microwave signals that have a common frequency. The signal generator adjusts a phase offset between the first and second signals in response to a correction signal. The system also includes first and second electronics sets, each of which amplifies a respective one of the first and second microwave signals. The system transmits the amplified, first and second microwave signals into the radial waveguide, and matches an impedance of the amplified microwave signals to an impedance presented by the waveguide. The system also includes at least two monitoring antennas disposed within the waveguide. A signal controller receives analog signals from the monitoring antennas, determines the digital correction signal based at least on the analog signals, and transmits the correction signal to the signal generator.

Abstract translation: 系统提供径向波导中微波的后匹配控制。 该系统包括径向波导和提供具有共同频率的第一和第二微波信号的信号发生器。 信号发生器响应于校正信号来调节第一和第二信号之间的相位偏移。 该系统还包括第一和第二电子设备组，每个电子组件放大第一和第二微波信号中相应的一个。 该系统将放大的第一和第二微波信号传输到径向波导中，并将放大的微波信号的阻抗与由波导呈现的阻抗相匹配。 该系统还包括设置在波导内的至少两个监控天线。 信号控制器从监控天线接收模拟信号，至少基于模拟信号确定数字校正信号，并将校正信号发送到信号发生器。

公开(公告)号：US20150247231A1

公开(公告)日：2015-09-03

申请号：US14195402

申请日：2014-03-03

Applicant: Applied Materials, Inc.

Inventor： Son T. Nguyen ,  Dmitry Lubomirsky

IPC: C23C14/04 ,  H01L21/687 ,  H01L21/67 ,  C23C14/16 ,  C23C14/34

CPC classification number: C23C14/042 ,  C23C14/185 ,  H01L21/67103 ,  H01L21/68785

Abstract: A method of forming thin film heater traces on a wafer chuck includes positioning a pattern, that forms openings corresponding to a desired layout of the heater traces, in proximity to the wafer chuck. The method includes sputtering a material toward the pattern and the wafer chuck such that a portion of the material passes through the openings and adheres to the wafer chuck to form the heater traces. A method of forming thin film heater traces on a wafer chuck includes sputtering a blanket layer of a material onto the wafer chuck, and patterning a photoresist layer utilizing photolithography. The photoresist layer covers the blanket layer in an intended layout of the heater traces, exposing the blanket layer in areas that are not part of the intended layout. The method removes the areas that are not part of the intended layout by etching, and removes the photoresist layer.

Abstract translation: 在晶片卡盘上形成薄膜加热器迹线的方法包括在晶片卡盘附近定位形成与加热器迹线的期望布局相对应的开口的图案。 该方法包括将材料溅射到图案和晶片卡盘，使得材料的一部分通过开口并粘附到晶片卡盘以形成加热器迹线。 在晶片卡盘上形成薄膜加热器迹线的方法包括将材料的覆盖层溅射到晶片卡盘上，以及利用光刻图案化光致抗蚀剂层。 光致抗蚀剂层以加热器迹线的预期布局覆盖橡皮布层，将橡皮布层暴露在不是预期布局的一部分的区域中。 该方法通过蚀刻除去不是预期布局的一部分的区域，并除去光致抗蚀剂层。

公开(公告)号：US09117855B2

公开(公告)日：2015-08-25

申请号：US14230237

申请日：2014-03-31

Applicant: Applied Materials, Inc.

Inventor： Tae Seung Cho ,  Yi-Heng Sen ,  Soonam Park ,  Dmitry Lubomirsky

IPC: B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00 ,  H01L21/67 ,  H01L21/3065

CPC classification number: H01L21/67069 ,  H01J37/32036 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/32541 ,  H01L21/3065

Abstract: Methods of controlling the polarity of capacitive plasma power applied to a remote plasma are described. Rather than applying a plasma power which involves both a positive and negative voltage swings equally, a capacitive plasma power is applied which favors either positive or negative voltage swings in order to select desirable process attributes. For example, the plasma power may be formed by applying a unipolar oscillating voltage between an electrode and a perforated plate. The unipolar oscillating voltage may have only positive or only negative voltages between the electrode and the perforated plate. The unipolar oscillating voltage may cross electrical ground in some portion of its oscillating voltage.

Abstract translation: 描述了控制施加到远程等离子体的电容等离子体功率的极性的方法。 不是施加包括正电压和负电压均等摆动的等离子体功率，而是施加电容性等离子体功率，其有利于正或负电压摆幅，以便选择期望的工艺属性。 例如，可以通过在电极和多孔板之间施加单极振荡电压来形成等离子体功率。 单极振荡电压在电极和多孔板之间可能仅具有正电压或仅负电压。 单极振荡电压可能在其振荡电压的某些部分交叉电接地。

公开(公告)号：US20150235865A1

公开(公告)日：2015-08-20

申请号：US14703299

申请日：2015-05-04

Applicant: Applied Materials, Inc.

Inventor： Anchuan Wang ,  Xinglong Chen ,  Zihui Li ,  Hiroshi Hamana ,  Zhijun Chen ,  Ching-Mei Hsu ,  Jiayin Huang ,  Nitin K. Ingle ,  Dmitry Lubomirsky ,  Shankar Venkataraman ,  Randhir Thakur

IPC: H01L21/324 ,  H01L21/306 ,  H01L21/311 ,  H01L21/3065

CPC classification number: H01L21/324 ,  C23C16/4405 ,  H01J37/32357 ,  H01J37/32862 ,  H01L21/02041 ,  H01L21/02057 ,  H01L21/0206 ,  H01L21/263 ,  H01L21/2686 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/3105 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/32136 ,  H01L21/32137 ,  H01L21/67069 ,  H01L21/67075 ,  H01L21/6708 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/67184 ,  H01L21/6719 ,  H01L21/67196 ,  H01L21/67201 ,  H01L21/67207 ,  H01L21/67248 ,  H01L21/67253 ,  H01L21/67288 ,  H01L21/67703 ,  H01L21/67739 ,  H01L21/67742 ,  H01L21/6831

Abstract: Systems, chambers, and processes are provided for controlling process defects caused by moisture contamination. The systems may provide configurations for chambers to perform multiple operations in a vacuum or controlled environment. The chambers may include configurations to provide additional processing capabilities in combination chamber designs. The methods may provide for the limiting, prevention, and correction of aging defects that may be caused as a result of etching processes performed by system tools.

Abstract translation: 提供系统，室和过程以控制由水分污染引起的过程缺陷。 这些系统可以提供腔室的配置，以在真空或受控环境中执行多个操作。 腔室可以包括在组合腔室设计中提供附加处理能力的构造。 这些方法可以提供由系统工具执行的蚀刻工艺可能引起的老化缺陷的限制，预防和校正。

公开(公告)号：US20140097270A1

公开(公告)日：2014-04-10

申请号：US13799840

申请日：2013-03-13

Applicant: Applied Materials, Inc.

Inventor： Qiwei Liang ,  Xinglong Chen ,  Kien Chuc ,  Dmitry Lubomirsky ,  Soonam Park ,  Jang-Gyoo Yang ,  Shankar Venkataraman ,  Toan Tran ,  Kimberly Hinckley ,  Saurabh Garg

IPC: B05B1/00

CPC classification number: H01J37/32449 ,  B05B1/005 ,  B05B1/18 ,  C23C16/452 ,  C23C16/455 ,  C23C16/45561 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/45582 ,  C23C16/50 ,  H01J37/32009 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32568 ,  H01J2237/002 ,  H01L21/67069

Abstract: Gas distribution assemblies are described including an annular body, an upper plate, and a lower plate. The upper plate may define a first plurality of apertures, and the lower plate may define a second and third plurality of apertures. The upper and lower plates may be coupled with one another and the annular body such that the first and second apertures produce channels through the gas distribution assemblies, and a volume is defined between the upper and lower plates.

Abstract translation: 描述了气体分配组件，其包括环形体，上板和下板。 上板可以限定第一多个孔，并且下板可以限定第二和第三多个孔。 上板和下板可以彼此耦合并且环形体使得第一和第二孔产生通过气体分配组件的通道，并且在上板和下板之间限定一个体积。