Lithium ion secondary battery electrode and method of forming same
    101.
    发明授权
    Lithium ion secondary battery electrode and method of forming same 有权
    锂离子二次电池电极及其形成方法

    公开(公告)号:US08835056B2

    公开(公告)日:2014-09-16

    申请号:US13114458

    申请日:2011-05-24

    摘要: A method of forming an electrode of a lithium ion secondary battery includes combining a binder and active particles to form a mixture, coating a surface with the mixture to form a coated article, translating the article along a first plane, cutting a first plurality of carbon fibers, each having a first average length, to form a second plurality of carbon fibers, each having a longitudinal axis and a second average length that is shorter than the first average length, inserting the second plurality of fibers into the mixture layer so that the longitudinal axis of each of at least a portion of the second plurality of fibers is not parallel to the first plane to form a preform, wherein the second plurality of fibers forms a truss structure disposed in three dimensions within the mixture layer, and heating the preform to form the electrode. An electrode is also disclosed.

    摘要翻译: 形成锂离子二次电池的电极的方法包括将粘合剂和活性颗粒组合以形成混合物,用混合物涂覆表面以形成涂布制品,沿着第一平面平移物品,切割第一多个碳 纤维,每个具有第一平均长度,以形成第二多个碳纤维,每个碳纤维具有比第一平均长度短的纵向轴线和第二平均长度,将第二多个纤维插入混合物层中,使得 所述第二多根纤维的至少一部分中的每一个的纵向轴线不平行于所述第一平面以形成预成型件,其中所述第二多根纤维形成三维地设置在所述混合物层内的桁架结构,并且加热所述预制件 以形成电极。 还公开了一种电极。

    Method for making Schottky barrier diode
    110.
    发明授权
    Method for making Schottky barrier diode 有权
    制造肖特基势垒二极管的方法

    公开(公告)号:US08809107B2

    公开(公告)日:2014-08-19

    申请号:US13337235

    申请日:2011-12-26

    IPC分类号: H01L21/04 H01L51/05 H01L51/00

    摘要: A method for making a Schottky barrier diode includes the following steps. A first metal layer, a second metal layer and a carbon nanotube composite material are provided. The carbon nanotube composite material is applied on the first metal layer and the second metal layer to form a semiconductor layer. The carbon nanotube composite material includes an insulated polymer and a number of carbon nanotubes dispersed in the insulated polymer. The semiconductor layer is in Schottky contact with the first metal layer and in ohmic contact with the second metal layer.

    摘要翻译: 制造肖特基势垒二极管的方法包括以下步骤。 提供第一金属层,第二金属层和碳纳米管复合材料。 将碳纳米管复合材料施加在第一金属层和第二金属层上以形成半导体层。 碳纳米管复合材料包括绝缘聚合物和分散在绝缘聚合物中的多个碳纳米管。 半导体层与第一金属层肖特基接触并与第二金属层欧姆接触。