中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

152 records (took 0.019 seconds)

    Method of etching
    111.
    发明授权
    Method of etching 有权
    蚀刻方法

    公开(公告)号：US09048066B2

    公开(公告)日：2015-06-02

    申请号：US13934531

    申请日：2013-07-03

    Applicant: SPTS TECHNOLOGIES LIMITED

    Inventor： Stephen R Burgess ,  Alex Theodosiou

    IPC: H01J37/20 ,  H01J37/32

    CPC classification number: H01J37/20 ,  H01J37/321 ,  H01J37/32862 ,  H01J2237/334

    Abstract: A method is for etching successive substrates on a platen in an inductively coupled plasma chamber in which the etching process results in carbonaceous deposits in the chamber. The method includes (a) interrupting the etching processing of substrates, (b) running an oxygen or oxygen containing plasma within the chamber and removing gaseous by-products, and (c) resuming the etch processing of substrates. The method is characterized in that it further includes the step of running an argon plasma in the chamber after step (b) with the platen biased.

    Abstract translation: 一种方法是用于在电感耦合等离子体室中的压板上蚀刻连续的衬底，其中蚀刻工艺导致腔室中的碳质沉积物。 该方法包括（a）中断衬底的蚀刻处理，（b）在室内运行含氧或含氧等离子体并除去气体副产物，以及（c）恢复衬底的蚀刻处理。 该方法的特征在于它还包括在步骤（b）之后在压板偏压的情况下在室中运行氩等离子体的步骤。

    METHOD AND APPARATUS FOR PROCESSING A SEMICONDUCTOR WORKPIECE
    112.
    发明申请
    METHOD AND APPARATUS FOR PROCESSING A SEMICONDUCTOR WORKPIECE 有权
    用于处理半导体工件的方法和装置

    公开(公告)号：US20140045340A1

    公开(公告)日：2014-02-13

    申请号：US13965254

    申请日：2013-08-13

    Applicant: SPTS TECHNOLOGIES LIMITED

    Inventor： STEPHEN R. BURGESS ,  ANTHONY P. WILBY

    IPC: H01L21/02 ,  C23C16/455 ,  C23C14/34

    CPC classification number: H01L21/02104 ,  C23C14/34 ,  C23C16/455 ,  H01L21/67109 ,  H01L21/67253

    Abstract: A method of processing a semiconductor workpiece includes placing a back surface of the workpiece on a workpiece support in a chamber so that the front surface of the workpiece faces into the chamber for processing, and the back surface is in fluid communication with a back region having an associated back gas pressure. The method further includes performing a workpiece processing step at a first chamber pressure Pc1 and a first back pressure Pb1, wherein Pc1 and Pb1 give rise to a pressure differential, Pb1-Pc1, and performing a workpiece cooling step at a second chamber pressure Pc2 and a second back pressure Pb2, wherein Pc2 and Pb2 are higher than Pc1 and Pb1, respectively.

    Abstract translation: 一种处理半导体工件的方法包括将工件的后表面放置在腔室中的工件支撑件上，使得工件的前表面面向腔室进行加工，并且后表面与具有 相关的后气体压力。 该方法还包括以第一室压Pc1和第一背压Pb1执行工件处理步骤，其中Pc1和Pb1产生压差Pb1-Pc1，并在第二室压力Pc2下执行工件冷却步骤， 第二背压Pb2，其中Pc2和Pb2分别高于Pc1和Pb1。

    METHOD OF CLEANING A PLASMA PROCESSING DEVICE
    114.
    发明申请
    METHOD OF CLEANING A PLASMA PROCESSING DEVICE 有权

    公开(公告)号：US20250122615A1

    公开(公告)日：2025-04-17

    申请号：US18752592

    申请日：2024-06-24

    Applicant: SPTS Technologies Limited

    Inventor： Matthew EDMONDS ,  William ROYLE ,  Caitlin Lane JONES ,  Daniel GOMEZ-SANCHEZ ,  Kathrine CROOK ,  Constantine FRAGOS ,  James MCGRATH

    IPC: C23C16/44 ,  C23C16/32 ,  C23C16/34

    Abstract: A method of cleaning a chamber of a plasma processing device to remove depositions formed after the plasma processing device has been used to deposit a dielectric material including silicon and carbon by introducing a first cleaning gas mixture into the chamber through a first gas inlet in a first introducing step; generating a first plasma in the chamber from the first cleaning gas mixture in a first cleaning step; introducing a second cleaning gas mixture into a remote plasma source in a second introducing step; generating a second plasma in the remote plasma source from a second cleaning gas mixture in a remote plasma generating step; and performing a second cleaning step by allowing fluorine radicals from the second plasma to enter the chamber and introducing a third cleaning gas mixture into the chamber at the same time as the fluorine radicals from the second plasma.

    Plasma Etched Compound Semiconductor
    115.
    发明申请
    Plasma Etched Compound Semiconductor 有权

    公开(公告)号：US20250079175A1

    公开(公告)日：2025-03-06

    申请号：US18607490

    申请日：2024-03-17

    Applicant: SPTS Technologies Limited

    Inventor： Alex CROOT

    IPC: H01L21/04 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/308

    Abstract: A silicon carbide substrate is etched to form a tapered feature. The plasma etch step includes generating a plasma from an etchant gas mixture comprising at least one chlorine-containing component, at least one inert gas component and at least one passivation material precursor. The anisotropic etching of the substrate comprises deposition of a passivation material.

    Method of deposition
    116.
    发明授权
    Method of deposition 有权

    公开(公告)号：US12207556B2

    公开(公告)日：2025-01-21

    申请号：US16865227

    申请日：2020-05-01

    Applicant: SPTS Technologies Limited

    Inventor： Adrian Thomas ,  Steve Burgess ,  Amit Rastogi ,  Tony Wilby ,  Scott Haymore

    IPC: H03H3/08 ,  C01B21/06 ,  C23C14/00 ,  C23C14/02 ,  C23C14/06 ,  H03H3/02 ,  H03H9/02 ,  H03H9/17 ,  H10N30/045 ,  H10N30/076 ,  H10N30/082

    Abstract: In a method for sputter depositing an additive-containing aluminium nitride film containing an additive element like Sc or Y, a first layer of the additive-containing aluminium nitride film is deposited onto a substrate disposed within a chamber by pulsed DC reactive sputtering. A second layer of the additive-containing aluminium nitride film is deposited onto the first layer by pulsed DC reactive sputtering. The second layer has the same composition as the first layer. A gas or gaseous mixture is introduced into the chamber when depositing the first layer. A gaseous mixture comprising nitrogen gas and an inert gas is introduced into the chamber when depositing the second layer. The percentage of nitrogen gas in the flow rate (in sccm) when depositing the first layer is greater than that when depositing the second layer.

Patent Agency Ranking