公开(公告)号：US20150064385A1

公开(公告)日：2015-03-05

申请号：US14472073

申请日：2014-08-28

Applicant: Brewer Science Inc.

Inventor： Tony D. Flaim ,  Jeremy McCutcheon

IPC: H01L21/683 ,  B32B38/08 ,  B32B38/00 ,  H01L21/306 ,  B32B38/10

CPC classification number: H01L21/6835 ,  B32B37/14 ,  B32B37/30 ,  B32B38/10 ,  B32B43/006 ,  B32B2037/243 ,  B32B2309/02 ,  B32B2309/04 ,  B32B2309/12 ,  B32B2457/14 ,  H01L2221/68318 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68381 ,  H01L2221/68386 ,  Y10T156/11 ,  Y10T156/1168 ,  Y10T156/1179 ,  Y10T156/1195 ,  Y10T156/19 ,  Y10T156/1961 ,  Y10T156/1978 ,  Y10T156/1983 ,  Y10T156/1994 ,  Y10T428/1452 ,  Y10T428/31645 ,  Y10T428/31667 ,  Y10T428/31692

Abstract: A process is disclosed for using two polymeric bonding material layers to bond a device wafer and carrier wafer in a way that allows debonding to occur between the two layers under low-force conditions at room temperature. Optionally, a third layer is included at the interface between the two layers of polymeric bonding material to facilitate the debonding at this interface. This process can potentially improve bond line stability during backside processing of temporarily bonded wafers, simplify the preparation of bonded wafers by eliminating the need for specialized release layers, and reduce wafer cleaning time and chemical consumption after debonding.

Abstract translation: 公开了一种使用两个聚合物粘合材料层以在低温条件下在室温下在两层之间发生剥离的方式来接合器件晶片和载体晶片的方法。 可选地，第三层包含在两层聚合物粘合材料之间的界面处，以便于在该界面处脱粘。 该过程可以潜在地改善临时接合的晶片的背面处理期间的结合线稳定性，通过消除对专用隔离层的需要来简化接合晶片的制备，以及在脱粘后减少晶片清洗时间和化学消耗。

公开(公告)号：US20140299969A1

公开(公告)日：2014-10-09

申请号：US14242551

申请日：2014-04-01

Applicant: Brewer Science Inc.

Inventor： Kui Xu ,  Mary Ann Hockey ,  Douglas Guerrero

IPC: H01L21/308

CPC classification number: H01L21/0331 ,  B81C1/00031 ,  B81C2201/0149 ,  C08F212/08 ,  C08F212/32 ,  C08F293/005 ,  C08F2438/03 ,  C08L33/12 ,  C09D125/08 ,  C09D125/14 ,  C09D125/16 ,  C09D153/00 ,  G03F7/0002 ,  H01L21/0337 ,  H01L21/31133 ,  H01L21/31138

Abstract: Compositions for directed self-assembly (DSA) patterning techniques are provided. Methods for directed self-assembly are also provided in which a DSA composition comprising a block copolymer is applied to a substrate and then self-assembled to form the desired pattern. The block copolymer includes at least two blocks of differing etch rates, so that one block (e.g., polymethylmethacrylate) is selectively removed during etching. Because the slower etching block (e.g., polystyrene) is modified with an additive to further slow the etch rate of that block, more of the slow etching block remains behind to fully transfer the pattern to underlying layers.

Abstract translation: 提供了用于定向自组装（DSA）图案化技术的组合。 还提供了用于定向自组装的方法，其中将包含嵌段共聚物的DSA组合物施加到基材上，然后自组装形成所需图案。 嵌段共聚物包括至少两个不同蚀刻速率的嵌段，使得在蚀刻期间选择性地除去一个嵌段（例如聚甲基丙烯酸甲酯）。 因为较慢的蚀刻块（例如，聚苯乙烯）用添加剂进行修饰以进一步降低该块的蚀刻速率，所以较慢的蚀刻块保留在后面以将图案完全转移到下面的层。

公开(公告)号：US20140295656A1

公开(公告)日：2014-10-02

申请号：US14229310

申请日：2014-03-28

Applicant: Brewer Science Inc.

Inventor： Blake Waterworth ,  Steven Matthew Rich ,  Molly Hladik ,  Kirk Emory

IPC: H01L21/677 ,  H01L21/768 ,  H01L21/28 ,  H01L21/306

CPC classification number: H01L21/76898 ,  H01L21/68707 ,  H01L21/68714 ,  H01L21/68757 ,  H01L21/68785 ,  Y10T156/11 ,  Y10T156/1744 ,  Y10T156/18 ,  Y10T156/19

Abstract: A wafer transfer assembly and method of using the assembly to transfer device wafers between processing tools in a manufacturing process are described herein. The assembly comprises a wafer transfer disk, an end effector configured to receive and support the wafer transfer disk, and an elongated handle extending from the end effector. The wafer transfer disk comprises a wafer-engaging surface configured to support a debonded device wafer placed on the wafer transfer assembly with the device surface adjacent the wafer-engaging surface. The wafer-engaging surface has non-stick properties, and yields a low bonding strength interface between the wafer-engaging surface and device surface. The resulting transfer stack can be transported to other processing tools for additional processing of the debonded device wafer, followed by separating the debonded device wafer and the wafer transfer disk without damaging the device wafer.

Abstract translation: 这里描述了晶片转移组件和在制造过程中使用组件在处理工具之间转移装置晶片的方法。 组件包括晶片转移盘，配置成接收和支撑晶片转移盘的端部执行器，以及从端部执行器延伸的细长手柄。 晶片转移盘包括晶片接合表面，其被配置为支撑位于晶片转移组件上的脱粘器件晶片，其中器件表面邻近晶片接合表面。 晶片接合表面具有不粘性，并且在晶片接合表面和器件表面之间产生低粘结强度界面。 所得到的转移堆叠可以被运送到其他处理工具以用于附加处理脱粘的器件晶片，随后分离脱粘器件晶片和晶片转移盘而不损坏器件晶片。

公开(公告)号：US20140103546A1

公开(公告)日：2014-04-17

申请号：US14055691

申请日：2013-10-16

Applicant: Brewer Science Inc.

Inventor： Jyoti K. Malhotra ,  Xing-Fu Zhong

IPC: H01L23/29 ,  H01L33/56 ,  H01L21/56

CPC classification number: H01L23/296 ,  C08G77/12 ,  C08G77/20 ,  C08K5/11 ,  C08K5/56 ,  C08L83/00 ,  C08L83/04 ,  H01L21/56 ,  H01L33/56 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Novel compositions and methods of using those compositions to form high refractive index coatings are provided. The compositions comprise a mixture of two silicone polymers, a catalyst, and an inhibitor for the catalyst. The preferred catalyst comprises platinum. Unlike prior art silicone systems, the inventive composition can be provided in a one-part form due to a substantially improved pot life. The compositions can be spin- or spray-applied, followed by baking to crosslink the polymers and form a cured layer. The inventive cured layers have high refractive indices and light transmissions.

Abstract translation: 提供了使用这些组合物形成高折射率涂层的新型组合物和方法。 组合物包含两种硅氧烷聚合物，催化剂和用于催化剂的抑制剂的混合物。 优选的催化剂包括铂。 与现有技术的有机硅系统不同，由于适用期大大提高，本发明组合物可以以一部分形式提供。 可以旋涂或喷涂组合物，然后烘烤以交联聚合物并形成固化层。 本发明的固化层具有高折射率和光透射。

公开(公告)号：US20130273330A1

公开(公告)日：2013-10-17

申请号：US13862720

申请日：2013-04-15

Applicant: BREWER SCIENCE INC.

Inventor： Yubao Wang ,  Mary Ann Hockey ,  Douglas J. Guerrero ,  Vandana Krishnamurthy ,  Robert C. Cox

IPC: B81C1/00 ,  B81B1/00

CPC classification number: B81C1/0038 ,  B81B1/00 ,  B81C1/00031 ,  B81C2201/0149 ,  G03F7/0002 ,  G03F7/26 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/31144 ,  Y10T428/24612 ,  Y10T428/24802

Abstract: Compositions for directed self-assembly patterning techniques are provided which avoid the need for separate anti-reflective coatings and brush neutral layers in the process. Methods for directed self-assembly are also provided in which a self-assembling material, such as a directed self-assembly block copolymer, can be applied directly to the silicon hardmask neutral layer and then self-assembled to form the desired pattern. Directed self-assembly patterned structures are also disclosed herein.

Abstract translation: 提供了用于定向自组装图案化技术的组合物，其避免在该过程中需要单独的抗反射涂层和刷中性层。 还提供了用于定向自组装的方法，其中诸如定向自组装嵌段共聚物的自组装材料可以直接施加到硅硬掩模中性层，然后自组装形成所需图案。 本文还公开了定向自组装图案结构。

公开(公告)号：US20130186851A1

公开(公告)日：2013-07-25

申请号：US13743965

申请日：2013-01-17

Applicant: Brewer Science Inc.

Inventor： Daniel M. Sullivan ,  Charlyn Stroud ,  Jinhua Dai

IPC: C09D5/00

CPC classification number: C09D5/006 ,  C07C69/76 ,  C07C69/94 ,  C07C2603/24 ,  C07C2603/74 ,  C07D303/23 ,  G03F7/091 ,  G03F7/094 ,  G03F7/30 ,  G03F7/40 ,  H01L21/0276 ,  Y10T428/265 ,  Y10T428/31511 ,  Y10T428/31525 ,  Y10T428/31529

Abstract: Nonpolymeric compounds, compositions, and methods for forming microelectronic structures, and the structures formed therefrom are provided. The nonpolymeric compounds are ring-opened, epoxide-adamantane derivatives that comprise at least two epoxy moieties and at least one adamantyl group, along with at least one chemical modification group, such as a chromophore, bonded to a respective epoxy moiety. Anti-reflective and/or planarization compositions can be formed using these compounds and used in lithographic processes, including fabrication of microelectronic structures.

Abstract translation: 提供用于形成微电子结构的非聚合物，组合物和方法以及由其形成的结构。 非聚合化合物是包含至少两个环氧部分和至少一个金刚烷基的开环环氧金刚烷衍生物，以及与相应环氧部分键合的至少一个化学修饰基团，例如发色团。 抗反射和/或平面化组合物可以使用这些化合物形成并用于光刻工艺，包括微电子结构的制造。

公开(公告)号：US20130089716A1

公开(公告)日：2013-04-11

申请号：US13648890

申请日：2012-10-10

Applicant: Brewer Science Inc.

Inventor： Vandana Krishnamurthy ,  Daniel M. Sullivan ,  Yubao Wang ,  Qin Lin ,  Sean Simmons

IPC: G03F7/004 ,  G03F7/20 ,  B32B33/00 ,  B32B9/04 ,  B32B15/08 ,  B32B27/08 ,  B05D5/12 ,  B32B17/10

CPC classification number: B32B33/00 ,  B32B9/04 ,  B32B2255/26 ,  B32B2307/70 ,  B32B2379/08 ,  C08G73/00 ,  C08G73/1067 ,  C08G73/1075 ,  C08G73/1078 ,  C09D179/08 ,  G03F7/094 ,  H01L21/0332 ,  H01L21/3081 ,  Y10T428/24802 ,  Y10T428/24851 ,  Y10T428/30 ,  Y10T428/31623 ,  Y10T428/31667 ,  Y10T428/31681 ,  Y10T428/31721

Abstract: The invention described herein is directed towards spin-on carbon materials comprising polyamic acid compositions and a crosslinker in a solvent system. The materials are useful in trilayer photolithography processes. Films made with the inventive compositions are not soluble in solvents commonly used in lithographic materials, such as, but not limited to PGME, PGMEA, and cyclohexanone. However, the films can be dissolved in developers commonly used in photolithography. In one embodiment, the films can be heated at high temperatures to improve the thermal stability for high temperature processing. Regardless of the embodiment, the material can be applied to a flat/planar or patterned surface. Advantageously, the material exhibits a wiggling resistance during pattern transfer to silicon substrate using fluorocarbon etch.

Abstract translation: 本文描述的本发明涉及在溶剂体系中包含聚酰胺酸组合物和交联剂的旋涂碳材料。 这些材料在三层光刻工艺中是有用的。 用本发明组合物制成的薄膜不溶于通常用于平版印刷材料的溶剂中，例如但不限于PGME，PGMEA和环己酮。 然而，这些膜可以溶解在通常用于光刻中的显影剂中。 在一个实施方案中，可以在高温下加热膜以改善用于高温处理的热稳定性。 不管实施例如何，材料可以应用于平面/平面或图案化表面。 有利地，该材料在使用碳氟化合物蚀刻的图案转移到硅衬底期间表现出摆动阻力。

公开(公告)号：US20040110089A1

公开(公告)日：2004-06-10

申请号：US10679521

申请日：2003-10-06

Applicant: Brewer Science Inc.

Inventor： Charles J. Neef ,  Mandar Bhave ,  Michelle Fowler ,  Michelle Windsor

IPC: G03C001/76 ,  G03C005/00

CPC classification number: G03F7/091 ,  C09B69/00 ,  Y10S430/111 ,  Y10T428/31511 ,  Y10T428/31515

Abstract: Novel anti-reflective coatings comprising small molecules (e.g., less than about 5,000 g/mole) in lieu of high molecular weight polymers and methods of using those coatings are provided. In one embodiment, aromatic carboxylic acids are used as the chromophores, and the resulting compounds are blended with a crosslinking agent and an acid. Anti-reflective coating films prepared according to the invention exhibit improved properties compared to high molecular weight polymeric anti-reflective coating films. The small molecule anti-reflective coatings have high etch rates and good via fill properties. Photolithographic processes carried out with the inventive material result in freestanding, 110-nm profiles.

Abstract translation: 提供了包含小分子（例如小于约5,000g / mol）代替高分子量聚合物的新型抗反射涂层以及使用这些涂层的方法。 在一个实施方案中，使用芳族羧酸作为发色团，并将所得化合物与交联剂和酸共混。 与高分子量聚合物抗反射涂膜相比，根据本发明制备的抗反射涂膜显示出改进的性能。 小分子抗反射涂层具有高蚀刻速率和良好的通孔填充性能。 使用本发明材料进行的光刻工艺产生独立的110nm轮廓。

公开(公告)号：US20040029041A1

公开(公告)日：2004-02-12

申请号：US10373897

申请日：2003-02-24

Applicant: Brewer Science, Inc.

Inventor： Wu-Sheng Shih ,  James E. Lamb III ,  Juliet Ann Minzey Snook ,  Mark G. Daffron

IPC: G03F007/09 ,  G03F007/11 ,  B32B007/14 ,  B32B003/10 ,  G03F007/16 ,  G03F007/20 ,  G03F007/40 ,  B29C059/16 ,  H05B006/00 ,  B29C055/00 ,  B29C035/08

CPC classification number: G03F7/0002 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/094 ,  G03F7/095 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/31053 ,  H01L21/31144 ,  Y10T428/24802 ,  Y10T428/24851

Abstract: The present invention is directed towards contact planarization methods that can be used to planarize substrate surfaces having a wide range of topographic feature densities for lithography applications. These processes use thermally curable, photo-curable, or thermoplastic materials to provide globally planarized surfaces over topographic substrate surfaces for lithography applications. Additional coating(s) with global planarity and uniform thickness can be obtained on the planarized surfaces. These inventive methods can be utilized with single-layer, bilayer, or multi-layer processing involving bottom anti-reflective coatings, photoresists, hardmasks, and other organic and inorganic polymers in an appropriate coating sequence as required by the particular application. More specifically, this invention produces globally planar surfaces for use in dual damascene and bilayer processes with greatly improved photolithography process latitude. The invention further provides globally planar surfaces to transfer patterns using imprint lithography, nano-imprint lithography, hot-embossing lithography and stamping pattern transfer techniques.

Abstract translation: 本发明涉及可用于平面化具有用于光刻应用的宽范围的地形特征密度的衬底表面的接触平面化方法。 这些方法使用可热固化，可光固化或热塑性材料，以在光刻应用的地形衬底表面上提供全局平面化的表面。 可以在平坦化表面上获得具有全局平面度和均匀厚度的附加涂层。 这些本发明的方法可以用于单层，双层或多层加工，其涉及底部抗反射涂层，光致抗蚀剂，硬掩模和其它有机和无机聚合物，按照特定应用所要求的合适的涂层顺序。 更具体地，本发明产生用于双镶嵌和双层工艺的全局平面表面，其具有极大改善的光刻工艺纬度。 本发明还提供了使用压印光刻，纳米压印光刻，热压印光刻和冲压图案转印技术来传输图案的全局平面表面。

公开(公告)号：US20030224586A1

公开(公告)日：2003-12-04

申请号：US10423618

申请日：2003-04-24

Applicant: Brewer Science, Inc.

Inventor： Ram W. Sabnis

IPC: H01L021/20

CPC classification number: B05D1/62 ,  C09D4/00 ,  C09D165/00 ,  G02B1/111 ,  G03F7/091 ,  G03F7/167 ,  H01L21/0276 ,  C08F238/00

Abstract: An improved method for applying polymeric antireflective coatings to substrate surfaces and the resulting precursor structures are provided. Broadly, the methods comprise plasma enhanced chemical vapor depositing (PECVD) a polymer on the substrate surfaces. The PECVD processes comprise providing a quantity of a polymer generated by introducing monomer vapors into a plasma state followed by polymerization thereof, with assistance of plasma energy, onto the surface of a substrate. The most preferred starting monomers are phenylacetylene, 4-ethynyltoluene, and 1-ethynyl-2-fluorobenzene. The inventive methods are useful for providing highly conformal antireflective coatings on large surface substrates having super submicron (0.25 nullm or smaller) features. The process provides a much faster deposition rate than conventional chemical vapor deposition (CVD) methods, is environmentally friendly, and is economical.

Abstract translation: 提供了一种用于将聚合物抗反射涂层施加到基底表面和所得前体结构的改进方法。 广泛地，这些方法包括在衬底表面上的等离子体增强化学气相沉积（PECVD）聚合物。 PECVD方法包括提供一定量的聚合物，其通过将单体蒸气引入等离子体状态，然后在等离子体能量的帮助下将其聚合到基底表面上。 最优选的起始单体是苯乙炔，4-乙炔基甲苯和1-乙炔基-2-氟苯。 本发明的方法可用于在具有超亚微米（0.25μm或更小）特征的大表面基底上提供高保形抗反射涂层。 该方法提供比常规化学气相沉积（CVD）方法更快的沉积速率，是环境友好的并且是经济的。