公开(公告)号：US20050227502A1

公开(公告)日：2005-10-13

申请号：US11046162

申请日：2005-01-28

Applicant: Francimar Schmitt ,  Hichem M'Saad

Inventor： Francimar Schmitt ,  Hichem M'Saad

IPC: H01L21/312 ,  H01L21/316 ,  H01L21/44 ,  H01L21/768

CPC classification number: H01L21/76825 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02351 ,  H01L21/02362 ,  H01L21/3122 ,  H01L21/31695 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/7682 ,  H01L2221/1047

Abstract: Ultra low K nanoporous dielectric films may be formed by chemical vapor deposition of silicon-containing components and large non-silicon containing porogens having labile groups. In accordance with one embodiment of the present invention, a low K nanoporous film may be formed by the oxidative reaction between trimethylsilane (the silicon-containing component) and alpha-terpinene (the non-silicon containing component). In accordance with certain embodiments of the present invention, the oxidant can comprise other than molecular oxygen, for example water vapor introduced in-situ or remotely, and then exposed to RF energy to generate reactive ionic species.

Abstract translation: 可以通过化学气相沉积含有硅的组分和具有不稳定基团的大的含硅的致孔剂来形成超低K纳米孔隙介电膜。 根据本发明的一个实施方案，可以通过三甲基硅烷（含硅组分）和α-萜品烯（非含硅组分）之间的氧化反应形成低K纳米多孔膜。 根据本发明的某些实施方案，氧化剂可以包括除分子氧之外的其它物质，例如原位或远程引入的水蒸气，然后暴露于RF能量以产生反应性离子物质。

公开(公告)号：US20050214457A1

公开(公告)日：2005-09-29

申请号：US10812717

申请日：2004-03-29

Applicant: Francimar Schmitt ,  Kimberly Branshaw ,  Padmanabhan Krishnaraj ,  Hichem M'Saad

Inventor： Francimar Schmitt ,  Kimberly Branshaw ,  Padmanabhan Krishnaraj ,  Hichem M'Saad

IPC: C23C16/40 ,  C23C16/56 ,  H01L21/312 ,  H01L21/316 ,  C23C16/00

CPC classification number: H01L21/31633 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02351 ,  H01L21/3122

Abstract: A method for depositing a low dielectric constant film includes providing a gas mixture including a cyclic organosiloxane and N2O as an oxidizing gas to a chamber and applying RF power to the gas mixture to deposit a low dielectric constant film. The gas mixture may also include oxygen and/or a linear hydrocarbon. In one aspect, the gas mixture includes N2O and oxygen as oxidizing gases, and a ratio of the flow rate of the N2O to a total flow rate of the N2O and the oxygen is between about 0.1 and about 0.5.

Abstract translation: 一种沉积低介电常数膜的方法包括：向室内提供包含环状有机硅氧烷和N 2 O 2的气体混合物作为氧化气体，并将RF功率施加到气体混合物以沉积低介电常数 电影。 气体混合物还可以包括氧和/或直链烃。 在一个方面，气体混合物包括N 2 O 3和氧气作为氧化气体，并且N 2 O 2的流量与总体流速的比率 N 2 O，氧在约0.1至约0.5之间。

公开(公告)号：US06926926B2

公开(公告)日：2005-08-09

申请号：US09953685

申请日：2001-09-10

Applicant: Seon-Mee Cho ,  Hichem M'Saad ,  Farhad Moghadam

Inventor： Seon-Mee Cho ,  Hichem M'Saad ,  Farhad Moghadam

IPC: C23C16/32 ,  C23C16/507 ,  H01L21/314 ,  C23C16/30

CPC classification number: H01L21/02167 ,  C23C16/325 ,  C23C16/507 ,  H01L21/02274 ,  H01L21/314

Abstract: A SiC-based layer is deposited on a substrate having an electrical resistivity between about 1 and 100 Ω cm. The substrate is disposed in a process chamber. A gaseous mixture having a silicon-containing gas and a hydrocarbon-containing gas is flowed to the process chamber. A high-density plasma, having an ion density greater than about 1011 ions/cm3 is generated from the plasma. A small electrical bias, between about 0.65 and 1.30 W/cm2, is applied to the substrate. The low bias compensates for an unexpected cooling that results when depositing the SiC-based layer but is low enough that implantation of hydrogen is minimized.

Abstract translation: 将SiC基层沉积在具有约1和100Ωcm之间的电阻率的基底上。 基板设置在处理室中。 具有含硅气体和含烃气体的气体混合物流入处理室。 从等离子体产生具有大于约10 11 /离子/ cm 3的离子密度的高密度等离子体。 将大约0.65和1.30W / cm 2之间的小的电偏压施加到基底上。 低偏压补偿了当沉积SiC基层时产生意外的冷却，但是足够低以使氢的注入最小化。

公开(公告)号：US06853043B2

公开(公告)日：2005-02-08

申请号：US10288123

申请日：2002-11-04

Applicant: Wendy H. Yeh ,  Sang Ahn ,  Christopher Dennis Bencher ,  Hichem M'Saad ,  Sudha Rathi

Inventor： Wendy H. Yeh ,  Sang Ahn ,  Christopher Dennis Bencher ,  Hichem M'Saad ,  Sudha Rathi

IPC: C03C17/22 ,  C23C16/30 ,  H01L21/768 ,  H01L31/0232

CPC classification number: H01L21/76811 ,  C03C17/22 ,  C03C2217/213 ,  C03C2217/282 ,  C23C16/30 ,  H01L21/76801 ,  H01L21/76808 ,  H01L21/76813

Abstract: A layer of antireflective coating (ARC) material for use in photolithographic processing. In one embodiment the ARC material has the formula SiwOxHy:Cz, where w, x, y and z represent the atomic percentage of silicon, oxygen, hydrogen and carbon, respectively, in the material and where w is between 35 and 55, x is between 35 and 55, y is between 4 and 15, z is between 0 and 3 and the atomic percentage of nitrogen in the material is less than or equal to 1 atomic percent.

Abstract translation: 用于光刻处理的一层抗反射涂层（ARC）材料。 在一个实施方案中，ARC材料具有式SiwO x H y：Cz，其中w，x，y和z分别表示材料中硅，氧，氢和碳的原子百分比，其中w在35和55之间，x是 在35和55之间，y在4和15之间，z在0和3之间，材料中氮的原子百分比小于或等于1原子％。

公开(公告)号：US06803325B2

公开(公告)日：2004-10-12

申请号：US10120713

申请日：2002-04-10

Applicant: Hichem M'Saad ,  Dana Tribula ,  Manoj Vellaikal ,  Farhad Moghadam ,  Sameer Desai

Inventor： Hichem M'Saad ,  Dana Tribula ,  Manoj Vellaikal ,  Farhad Moghadam ,  Sameer Desai

IPC: H01L2131

CPC classification number: H01L21/02131 ,  C23C16/401 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/31629

Abstract: A method of formation of a damascene FSG film with good adhesion to silicon nitride in an HDP-CVD system. Silane (SiH4), silicon tetrafluoride (SiF4), oxygen (O2) and argon (Ar) are used as the reactant gases. SiH4, SiF4, and O2 react to form the FSG. Ar is introduced to promote gas dissociation. All four gases are used for depositing most of the FSG film. SiH4 is not used during deposition of the interfacial part of the FSG film. The interfacial part of the FSG film refers either to the topmost portion, if silicon nitride is to be deposited on top of the FSG or the bottom portion if the FSG is to be deposited on top of silicon nitride. Using SiH4 with the SiF4 tends to mitigate the destructive effects of SiF4 throughout most of the deposition. By removing the SiH4 from the deposition of the interfacial part of the FSG film less hydrogen is incorporated into the film in the interfacial region and adhesion to overlying or underlying silicon nitride is improved.

Abstract translation: 在HDP-CVD系统中形成对氮化硅具有良好粘附性的镶嵌FSG膜的方法。 使用硅烷（SiH 4），四氟化硅（SiF 4），氧（O 2）和氩（Ar）作为反应气体。 SiH4，SiF4和O2反应形成FSG。 引入Ar来促进气体分解。 所有四种气体都用于沉积大部分FSG膜。 在沉积FSG膜的界面部分期间不使用SiH4。 如果要将FSG沉积在氮化硅的顶部，则FSG膜的界面部分指的是最高部分，如果氮化硅沉积在FSG或底部的顶部。 SiF4与SiF4的共同作用倾向于减少SiF4在大部分沉积过程中的破坏作用。 通过从FSG膜的界面部分的沉积中除去SiH 4，在界面区域中较少的氢被引入到膜中，并且改善了覆盖或下面的氮化硅的粘合性。

公开(公告)号：US06713390B2

公开(公告)日：2004-03-30

申请号：US10194398

申请日：2002-07-12

Applicant: Hichem M'Saad ,  Seon Mee Cho ,  Dana Tribula

Inventor： Hichem M'Saad ,  Seon Mee Cho ,  Dana Tribula

IPC: H01L2144

CPC classification number: C23C16/325 ,  H01L21/314 ,  H01L21/3146 ,  Y10S438/931

Abstract: A method is provided for depositing a barrier layer on a substrate using a gaseous mixture that includes a hydrocarbon-containing gas and a silicon-containing gas. The gaseous mixture is provided to a process chamber and is used to form a plasma for depositing the barrier layer. The barrier layer is deposited with a thickness less than 500 Å. Suitable hydrocarbon-containing gases include alkanes and suitable silicon-containing gases include silanes.

Abstract translation: 提供了一种使用包括含烃气体和含硅气体的气体混合物在基板上沉积阻挡层的方法。 将气体混合物提供到处理室，并用于形成用于沉积阻挡层的等离子体。 阻挡层以小于500埃的厚度沉积。 合适的含烃气体包括烷烃，合适的含硅气体包括硅烷。

公开(公告)号：US06667248B2

公开(公告)日：2003-12-23

申请号：US09949414

申请日：2001-09-05

Applicant: Hichem M'Saad ,  Chad Peterson ,  Zhuang Li ,  Anchuan Wang ,  Farhad Moghadam

Inventor： Hichem M'Saad ,  Chad Peterson ,  Zhuang Li ,  Anchuan Wang ,  Farhad Moghadam

IPC: H01L2131

CPC classification number: H01L21/02131 ,  C23C16/401 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31629

Abstract: A method is provided for forming a fluorinated silicate glass layer with HDP-CVD having a lower dielectric constant without compromising the mechanical properties of hardness and compressive stress. A gaseous mixture comprising a silicon-containing gas, an oxygen-containing gas, and a fluorine-containing gas is provided to a process chamber. The ratio of the flow rate of the fluorine-containing gas to the flow rate of the silicon-containing gas is greater than 0.65. A high-density plasma is generated from the gaseous mixture by applying a source RF power having a power density less than 12 W/cm2. A bias is applied to a substrate in the process chamber at a bias power density greater than 0.8 W/cm2 and less than 2.4 W/cm2. The fluorinated silicate glass layer is deposited onto the substrate using the high-density plasma.

Abstract translation: 提供了一种用于在不影响硬度和压缩应力的机械性能的情况下形成具有较低介电常数的HDP-CVD的氟化硅酸盐玻璃层的方法。 将包含含硅气体，含氧气体和含氟气体的气体混合物提供到处理室。 含氟气体的流量与含硅气体的流量比大于0.65。 通过施加功率密度小于12W / cm 2的源RF功率，从气体混合物产生高密度等离子体。 以大于0.8W / cm 2且小于2.4W / cm 2的偏置功率密度对处理室中的衬底施加偏压。 使用高密度等离子体将氟化硅酸盐玻璃层沉积在基板上。

公开(公告)号：US08753989B2

公开(公告)日：2014-06-17

申请号：US13365229

申请日：2012-02-02

Applicant: Mihaela Balseanu ,  Michael S. Cox ,  Li-Qun Xia ,  Mei-Yee Shek ,  Jia Lee ,  Vladimir Zubkov ,  Tzu-Fang Huang ,  Rongping Wang ,  Isabelita Roflox ,  Hichem M'Saad

Inventor： Mihaela Balseanu ,  Michael S. Cox ,  Li-Qun Xia ,  Mei-Yee Shek ,  Jia Lee ,  Vladimir Zubkov ,  Tzu-Fang Huang ,  Rongping Wang ,  Isabelita Roflox ,  Hichem M'Saad

IPC: H01L21/31

CPC classification number: C23C16/345 ,  C23C16/45523 ,  C23C16/56 ,  H01L21/3141 ,  H01L21/3185 ,  H01L21/823412 ,  H01L21/82345 ,  H01L21/823807 ,  H01L21/823835

Abstract: High tensile stress in a deposited layer, such as a silicon nitride layer, may be achieved utilizing one or more techniques employed either alone or in combination. In one embodiment, a silicon nitride film having high tensile stress may be formed by depositing the silicon nitride film in the presence of a porogen. The deposited silicon nitride film may be exposed to at least one treatment selected from a plasma or ultraviolet radiation to liberate the porogen. The silicon nitride film may be densified such that a pore resulting from liberation of the porogen is reduced in size, and Si—N bonds in the silicon nitride film are strained to impart a tensile stress in the silicon nitride film. In another embodiment, tensile stress in a silicon nitride film may be enhanced by depositing a silicon nitride film in the presence of a nitrogen-containing plasma at a temperature of less than about 400° C., and exposing the deposited silicon nitride film to ultraviolet radiation.

Abstract translation: 沉积层（例如氮化硅层）中的高拉伸应力可以利用单独使用或组合使用的一种或多种技术来实现。 在一个实施例中，可以通过在致孔剂的存在下沉积氮化硅膜来形成具有高拉伸应力的氮化硅膜。 沉积的氮化硅膜可以暴露于选自等离子体或紫外线辐射的至少一种处理以释放致孔剂。 可以使氮化硅膜致密化，使致孔剂释放产生的孔尺寸减小，并且氮化硅膜中的Si-N键变形以在氮化硅膜中产生拉伸应力。 在另一个实施例中，可以通过在低于约400℃的温度下在含氮等离子体的存在下沉积氮化硅膜来增强氮化硅膜中的拉伸应力，并将沉积的氮化硅膜暴露于紫外线 辐射。

公开(公告)号：US08591699B2

公开(公告)日：2013-11-26

申请号：US13676820

申请日：2012-11-14

Applicant: Ramprakash Sankarakrishnan ,  Dale R. Du Bois ,  Ganesh Balasubramanian ,  Karthik Janakiraman ,  Juan Carlos Rocha-Alvarez ,  Thomas Nowak ,  Visweswaren Sivaramakrishnan ,  Hichem M'Saad

Inventor： Ramprakash Sankarakrishnan ,  Dale R. Du Bois ,  Ganesh Balasubramanian ,  Karthik Janakiraman ,  Juan Carlos Rocha-Alvarez ,  Thomas Nowak ,  Visweswaren Sivaramakrishnan ,  Hichem M'Saad

IPC: C23F1/00 ,  H01L21/306

CPC classification number: F16K31/0655 ,  B08B5/00 ,  B08B7/0021 ,  C23C16/4405 ,  C23C16/4409 ,  C23C16/45561 ,  F16K1/221 ,  F16K1/224 ,  F16K31/06 ,  F16K31/088 ,  Y10S438/905

Abstract: A method and apparatus for cleaning a process chamber are provided. In one embodiment, a process chamber is provided that includes a remote plasma source and a process chamber having at least two processing regions. Each processing region includes a substrate support assembly disposed in the processing region, a gas distribution system configured to provide gas into the processing region above the substrate support assembly, and a gas passage configured to provide gas into the processing region below the substrate support assembly. A first gas conduit is configured to flow a cleaning agent from the remote plasma source through the gas distribution assembly in each processing region while a second gas conduit is configured to divert a portion of the cleaning agent from the first gas conduit to the gas passage of each processing region.

公开(公告)号：US08445075B2

公开(公告)日：2013-05-21

申请号：US12975833

申请日：2010-12-22

Applicant: Huiwen Xu ,  Mei-Yee Shek ,  Li-Qun Xia ,  Amir Al-Bayati ,  Derek Witty ,  Hichem M'Saad

Inventor： Huiwen Xu ,  Mei-Yee Shek ,  Li-Qun Xia ,  Amir Al-Bayati ,  Derek Witty ,  Hichem M'Saad

IPC: B05D3/10

CPC classification number: C23C16/308 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/3122 ,  H01L21/31612 ,  H01L21/31633 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76834

Abstract: Methods of processing films on substrates are provided. In one aspect, the methods comprise treating a patterned low dielectric constant film after a photoresist is removed from the film by depositing a thin layer comprising silicon, carbon, and optionally oxygen and/or nitrogen on the film. The thin layer provides a carbon-rich, hydrophobic surface for the patterned low dielectric constant film. The thin layer also protects the low dielectric constant film from subsequent wet cleaning processes and penetration by precursors for layers that are subsequently deposited on the low dielectric constant film.

Abstract translation: 提供了在基板上处理膜的方法。 在一个方面，所述方法包括在通过在膜上沉积包含硅，碳和任选的氧和/或氮的薄层来从膜去除光致抗蚀剂之后处理图案化的低介电常数膜。 薄层为图案化的低介电常数膜提供了富含碳的疏水性表面。 薄层还保护低介电常数膜免于随后的湿法清洗工艺和前体渗透，随后沉积在低介电常数膜上。