公开(公告)号：US20160300696A1

公开(公告)日：2016-10-13

申请号：US15092625

申请日：2016-04-07

Applicant: Ximan Jiang

Inventor： Ximan Jiang

IPC: H01J37/32

CPC classification number: H01J37/32357 ,  H01J37/321 ,  H01J37/32192 ,  H01J37/32623 ,  H01J37/32935 ,  H01J2237/08

Abstract: A method to improve plasma discharge efficiency by attaching one or more booster chambers to the main discharge chamber is disclosed here. The booster chamber functions as a plasma discharge amplification device for the main discharge chamber. It improves plasma density significantly, especially at pressure below 50 mTorr. Compared with traditional inductively coupled plasma (ICP) source, the strength of the plasma source enhanced with booster chamber has been improved several folds at low pressure conditions. Booster chamber can also be used as a convenient high speed plasma etching and deposition processing chamber for small samples. A method to gauge plasma strength by measuring plasma emission intensity has also been disclosed in this application.

Abstract translation: 这里公开了通过将一个或多个增压室附接到主放电室来提高等离子体放电效率的方法。 增压室用作主放电室的等离子体放电放大装置。 它显着提高血浆密度，特别是在低于50mTorr的压力下。 与传统的电感耦合等离子体（ICP）源相比，增压室等离子体源的强度在低压条件下提高了数倍。 增压室也可以用作小样品的方便的高速等离子体蚀刻和沉积处理室。 通过测量等离子体发射强度来测量等离子体强度的方法也在本申请中公开。

公开(公告)号：US20160217961A1

公开(公告)日：2016-07-28

申请号：US15091433

申请日：2016-04-05

Applicant: COLORADO STATE UNIVERSITY RESEARCH FOUNDATION

Inventor： Lauren P. Rand ,  John D. Williams ,  Rafael A. Martinez

IPC: H01J1/02 ,  H01J1/14

CPC classification number: H01J1/025 ,  F03H1/0068 ,  H01J1/14 ,  H01J27/08 ,  H01J27/146 ,  H01J2237/08

Abstract: The use of the electride form of 12CaO-7Al2O3, or C12A7, as a low work function electron emitter in a hollow cathode discharge apparatus is described. No heater is required to initiate operation of the present cathode, as is necessary for traditional hollow cathode devices. Because C12A7 has a fully oxidized lattice structure, exposure to oxygen does not degrade the electride. The electride was surrounded by a graphite liner since it was found that the C12A7 electride converts to it's eutectic (CA+C3A) form when heated (through natural hollow cathode operation) in a metal tube.

Abstract translation: 描述了在空心阴极放电装置中使用12CaO-7Al2O3或C12A7的电子形式作为低功函电子发射体。 根据传统的空心阴极器件的需要，不需要加热器来启动本阴极的操作。 因为C12A7具有完全氧化的晶格结构，所以暴露于氧气不会降低电极。 电极被石墨衬垫包围，因为发现当在金属管中加热（通过天然空心阴极操作）时，C12A7电致转变成它的共晶（CA + C3A）形式。

公开(公告)号：US09257286B2

公开(公告)日：2016-02-09

申请号：US14267390

申请日：2014-05-01

Applicant: Douglas C. Heiderman ,  Ashwini K. Sinha ,  Lloyd A. Brown

Inventor： Douglas C. Heiderman ,  Ashwini K. Sinha ,  Lloyd A. Brown

IPC: H01L21/265 ,  C23C14/00 ,  F17C1/00 ,  H01J37/317

CPC classification number: H01L21/265 ,  C23C14/00 ,  C23C14/16 ,  C23C14/48 ,  F17C1/00 ,  H01J37/3171 ,  H01J2237/08 ,  Y02E60/321 ,  Y10T137/7781

Abstract: A novel method for ion implanting isotopically enriched selenium containing source material is provided. The source material is selected and enriched in a specific mass isotope of selenium, whereby the enrichment is above natural abundance levels. The inventive method allows reduced gas consumption and reduced waste. The source material is preferably stored and delivered from a sub-atmospheric storage and delivery device to enhance safety and reliability during the selenium ion implantation process.

Abstract translation: 提供了一种用于离子注入同位素富集的含硒源材料的新方法。 选择源材料并富集硒的特定质量同位素，从而富集高于天然丰度水平。 本发明的方法允许减少气体消耗并减少浪费。 源材料优选地从次大气储存和输送装置储存和递送，以在硒离子注入过程中增强安全性和可靠性。

公开(公告)号：US09257261B2

公开(公告)日：2016-02-09

申请号：US13406207

申请日：2012-02-27

Applicant: Tom Miller

Inventor： Tom Miller

IPC: H01J37/30 ,  H01J37/305

CPC classification number: H01J37/3053 ,  H01J37/1472 ,  H01J37/3005 ,  H01J37/3056 ,  H01J2237/0453 ,  H01J2237/049 ,  H01J2237/08 ,  H01J2237/30472 ,  H01J2237/31745 ,  H01J2237/31749

Abstract: A method for rapid switching between operating modes with differing beam currents in a charged particle system is disclosed. Many FIB milling applications require precise positioning of a milled pattern within a region of interest (RoI). This may be accomplished by using fiducial marks near the RoI, wherein the FIB is periodically deflected to image these marks during FIB milling. Any drift of the beam relative to the RoI can then be measured and compensated for, enabling more precise positioning of the FIB milling beam. It is often advantageous to use a lower current FIB for imaging since this may enable higher spatial resolution in the image of the marks. For faster FIB milling, a larger beam current is desired. Thus, for optimization of the FIB milling process, a method for rapidly switching between high and low current operating modes is desirable.

Abstract translation: 公开了一种用于在带电粒子系统中具有不同束电流的操作模式之间快速切换的方法。 许多FIB铣削应用需要在感兴趣区域（RoI）内精确定位铣削图案。 这可以通过使用RoI附近的基准标记来实现，其中FIB在FIB研磨期间周期性地偏转以对这些标记进行成像。 然后可以测量和补偿光束相对于RoI的任何漂移，使得能够更精确地定位FIB铣削梁。 使用较低电流FIB进行成像通常是有利的，因为这可以使得标记图像中的更高的空间分辨率得以实现。 对于更快的FIB铣削，需要较大的束电流。 因此，为了优化FIB研磨工艺，需要在高电流和低电流操作模式之间快速切换的方法。

公开(公告)号：US20150318142A1

公开(公告)日：2015-11-05

申请号：US14692395

申请日：2015-04-21

Applicant: Axcelis Technologies, Inc.

Inventor： Causon Ko-Chuan Jen ,  William Bintz

IPC: H01J37/147 ,  H01J37/317 ,  H01J37/20

CPC classification number: H01J37/1474 ,  H01J37/1478 ,  H01J37/20 ,  H01J37/3171 ,  H01J2237/08 ,  H01J2237/1506 ,  H01J2237/151 ,  H01J2237/152 ,  H01J2237/20207 ,  H01J2237/20214 ,  H01J2237/31701 ,  H01J2237/31708

Abstract: An ion implantation system and method is provided for varying an angle of incidence of a scanned ion beam relative to the workpiece concurrent with the scanned ion beam impacting the workpiece. The system has an ion source configured to form an ion beam and a mass analyzer configured to mass analyze the ion beam. An ion beam scanner is configured to scan the ion beam in a first direction, therein defining a scanned ion beam. A workpiece support is configured to support a workpiece thereon, and an angular implant apparatus is configured to vary an angle of incidence of the scanned ion beam relative to the workpiece. The angular implant apparatus comprises one or more of an angular energy filter and a mechanical apparatus operably coupled to the workpiece support, wherein a controller controls the angular implant apparatus, thus varying the angle of incidence of the scanned ion beam relative to the workpiece concurrent with the scanned ion beam impacting the workpiece.

Abstract translation: 提供离子注入系统和方法，用于与扫描的离子束同时冲击工件，改变扫描离子束相对于工件的入射角。 该系统具有构造成形成离子束的离子源和被配置为质量分析离子束的质量分析器。 离子束扫描器被配置成沿着第一方向扫描离子束，其中限定扫描的离子束。 工件支撑件构造成在其上支撑工件，并且角度注入装置被配置为改变扫描离子束相对于工件的入射角。 角植入装置包括角度能量过滤器和可操作地耦合到工件支撑件的机械装置中的一个或多个，其中控制器控制角度注入装置，从而改变扫描离子束相对于工件的入射角度，同时与 扫描的离子束撞击工件。

公开(公告)号：US20150294834A1

公开(公告)日：2015-10-15

申请号：US14251739

申请日：2014-04-14

Applicant: FEI Company

Inventor： Brian Roberts Routh, JR. ,  Valerie Brogden ,  Michael Schmidt

IPC: H01J37/20 ,  G01N1/44 ,  H01J37/26

CPC classification number: H01J37/20 ,  G01N1/44 ,  H01J37/26 ,  H01J37/261 ,  H01J2237/08 ,  H01J2237/2007 ,  H01J2237/201 ,  H01J2237/204 ,  H01J2237/2602 ,  H01J2237/31745

Abstract: A TEM grid provides posts having steps, the steps increasing the number of samples that can be attached to the grid. In some embodiments, each post includes a one sided stair step configuration. A method of extracting multiple samples includes extracting samples and attaching the samples to the different stair steps on the posts.

Abstract translation: TEM网格提供具有步骤的帖子，步骤增加可以附加到网格的样本数量。 在一些实施例中，每个柱包括单面阶梯构造。 提取多个样品的方法包括提取样品并将样品附着到柱上的不同阶梯台阶上。

公开(公告)号：US09136096B2

公开(公告)日：2015-09-15

申请号：US13560664

申请日：2012-07-27

Applicant: Ludovic Godet ,  Adjin Sarajlic

Inventor： Ludovic Godet ,  Adjin Sarajlic

IPC: C23C14/24 ,  H01J37/32 ,  H01J37/34 ,  C23C14/34 ,  C23C14/04

CPC classification number: H01J37/32422 ,  C23C14/046 ,  C23C14/3407 ,  C23C14/345 ,  H01J37/32357 ,  H01J37/32403 ,  H01J37/32623 ,  H01J37/32633 ,  H01J37/32642 ,  H01J37/3414 ,  H01J37/3417 ,  H01J37/3467 ,  H01J2237/08 ,  H01J2237/31701

Abstract: A plasma processing apparatus is disclosed. The plasma processing apparatus includes a source configured to generate a plasma in a process chamber having a plasma sheath adjacent to the front surface of a workpiece, and a plasma sheath modifier. The plasma sheath modifier controls a shape of a boundary between the plasma and the plasma sheath so a portion of the shape of the boundary is not parallel to a plane defined by a front surface of the workpiece facing the plasma. A metal target is affixed to the back surface of the plasma sheath modifier so as to be electrically insulated from the plasma sheath modifier and is electrically biased such that ions exiting the plasma and passing through an aperture in the plasma sheath modifier are attracted toward the metal target. These ions cause sputtering of the metal target, allowing three dimensional metal deposition of the workpiece.

Abstract translation: 公开了一种等离子体处理装置。 等离子体处理装置包括被配置为在具有与工件的前表面相邻的等离子体鞘的处理室中产生等离子体的源和等离子体护套改性剂。 等离子体护套修改器控制等离子体和等离子体护套之间的边界的形状，使得边界形状的一部分不平行于由面向等离子体的工件的前表面限定的平面。 将金属靶固定到等离子体护套改性剂的背面，以便与等离子体护套改性剂电绝缘，并被电偏置，使得离开等离子体并通过等离子体护套改性剂中的孔的离子被吸引到金属 目标。 这些离子引起金属靶溅射，允许工件的三维金属沉积。

公开(公告)号：US20150243477A1

公开(公告)日：2015-08-27

申请号：US14432730

申请日：2013-10-07

Applicant: FEI COMPANY

Inventor： Stacey Stone ,  Sang Hoon Lee ,  Jeffrey Blackwood ,  Michael Schmidt

IPC: H01J37/30 ,  H01J37/305 ,  H01J37/31

CPC classification number: H01J37/3005 ,  G01N1/32 ,  G01N23/2255 ,  G01N2223/104 ,  G01N2223/611 ,  H01J37/3007 ,  H01J37/3053 ,  H01J37/3056 ,  H01J37/31 ,  H01J2237/063 ,  H01J2237/08 ,  H01J2237/2813 ,  H01J2237/31732 ,  H01J2237/31745 ,  H01J2237/31749

Abstract: To reduce artifacts in a surface exposed by a focused ion beam for viewing, a trench is milled next to the region of interest, and the trench is filled to create a bulkhead. The ion beam is directed through the bulkhead to expose a portion of the region of interest for viewing. The trench is filled, for example, by charged particle beam-induced deposition. The trench is typically milled and filled from the top down, and then the ion beam is angled with respect to the sample surface to expose the region of interest.

Abstract translation: 为了减少由聚焦离子束暴露的表面中的人造物进行观察，在感兴趣区域旁边研磨沟槽，并且填充沟槽以形成隔板。 离子束被引导通过隔板以暴露感兴趣区域的一部分以供观察。 例如，通过带电粒子束诱导沉积来填充沟槽。 沟槽通常从顶部向下铣削和填充，然后离子束相对于样品表面成角度以暴露感兴趣的区域。

公开(公告)号：US20150243476A1

公开(公告)日：2015-08-27

申请号：US14492819

申请日：2014-09-22

Applicant: TEL Epion Inc.

Inventor： Vincent Lagana-Gizzo ,  Noel Russell ,  Joshua LaRose ,  Soo Doo Chae

IPC: H01J37/304 ,  H01J37/30

CPC classification number: H01J37/304 ,  H01J37/3005 ,  H01J37/3053 ,  H01J2237/08 ,  H01J2237/30455 ,  H01J2237/3151 ,  H01J2237/317

Abstract: A method of modifying an upper layer of a workpiece using a gas cluster ion beam (GCIB) is described. The method includes collecting parametric data relating to an upper layer of a workpiece, and determining a predicted systematic error response for applying a GCIB to the upper layer to alter an initial profile of a measured attribute by using the parametric data. Additionally, the method includes identifying a target profile of the measured attribute, directing the GCIB toward the upper layer of the workpiece, and spatially modulating an applied property of the GCIB, based at least in part on the predicted systematic error response and the parametric data, as a function of position on the upper layer of the workpiece to achieve the target profile of the measured attribute.

Abstract translation: 描述了使用气体簇离子束（GCIB）修饰工件的上层的方法。 该方法包括收集与工件的上层相关的参数数据，以及通过使用参数数据确定用于将GCIB应用于上层以改变测量属性的初始简档的预测的系统误差响应。 另外，该方法包括至少部分地基于预测的系统误差响应和参数数据来识别所测量的属性的目标轮廓，将GCIB引向工件的上层，以及空间调制GCIB的应用属性 ，作为工件上层位置的函数，以达到测量属性的目标轮廓。

公开(公告)号：US20150136996A1

公开(公告)日：2015-05-21

申请号：US14549016

申请日：2014-11-20

Applicant: SEN Corporation

Inventor： Kouji Inada ,  Kouji Kato

IPC: H01J37/317 ,  H01J37/147 ,  H01J37/21

CPC classification number: H01J37/304 ,  H01J37/04 ,  H01J37/3171 ,  H01J2237/0455 ,  H01J2237/08 ,  H01J2237/24535 ,  H01J2237/304 ,  H01J2237/30472 ,  H01J2237/31701

Abstract: A beam current adjuster for an ion implanter includes a variable aperture device which is disposed at an ion beam focus point or a vicinity thereof. The variable aperture device is configured to adjust an ion beam width in a direction perpendicular to an ion beam focusing direction at the focus point in order to control an implanting beam current. The variable aperture device may be disposed immediately downstream of a mass analysis slit. The beam current adjuster may be provided with a high energy ion implanter including a high energy multistage linear acceleration unit.

Abstract translation: 用于离子注入机的束流调节器包括设置在离子束聚焦点或其附近的可变孔径装置。 可变孔径装置被配置为在焦点处调整垂直于离子束聚焦方向的方向上的离子束宽度，以便控制注入束电流。 可变孔径装置可以紧靠质量分析狭缝的下游设置。 束电流调节器可以设置有包括高能多级线性加速单元的高能离子注入机。