公开(公告)号：US20240136161A1

公开(公告)日：2024-04-25

申请号：US18278276

申请日：2022-03-11

Applicant: LAM RESEARCH CORPORATION

Inventor： Karl Frederick LEESER ,  Richard BLANK ,  Jacob L. HIESTER

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/458 ,  C23C16/50 ,  C23C16/52 ,  H01L21/683

CPC classification number: H01J37/32715 ,  C23C16/45565 ,  C23C16/4583 ,  C23C16/50 ,  C23C16/52 ,  H01J37/3244 ,  H01J37/32541 ,  H01J37/32568 ,  H01L21/6833 ,  H01J2237/2007 ,  H01J2237/20207

Abstract: A system comprises a pedestal and a controller. The pedestal is arranged below a showerhead in a processing chamber and includes at least three electrodes to clamp a substrate to the pedestal during processing. The controller is configured to measure a pedestal-to-showerhead gap and at least one of a magnitude and a direction of a relative tilt between the pedestal and the showerhead by sensing impedances between the at least three electrodes and the showerhead.

公开(公告)号：US20240128062A1

公开(公告)日：2024-04-18

申请号：US17769430

申请日：2020-10-20

Applicant: LAM RESEARCH CORPORATION

Inventor： Joel HOLLINGSWORTH ,  Ramkishan LINGAMPALLI ,  Karl LEESER ,  Stephen TOPPING ,  Noah Elliot BAKER

IPC: H01J37/32 ,  C23C16/458

CPC classification number: H01J37/32724 ,  C23C16/4581 ,  C23C16/4586 ,  H01J37/32568 ,  H01J37/32807 ,  H01J2237/2007 ,  H01J2237/3321

Abstract: A substrate support includes a monolithic anisotropic body, which includes first, second and intermediate layers. The first layer is formed of a first material and disposed therein are RF and clamping electrodes. The second layer is formed of the first material or a second material and disposed therein is a heating element. The intermediate layer is formed of a different material than the first and second layers, such that at least one of: a thermal energy conductivity of the intermediate layer is different than a thermal energy conductivity of at least one of the first or second materials; or an electrical energy conductivity of the intermediate layer is different than an electrical conductivity of at least one of the first or second materials. Either the intermediate layer is disposed between the first and second layers or the second layer is disposed between the first and intermediate layers.

公开(公告)号：US11961718B2

公开(公告)日：2024-04-16

申请号：US17186711

申请日：2021-02-26

Applicant: Tokyo Electron Limited

Inventor： Shojiro Yahata ,  Tetsuji Sato

IPC: H01L21/00 ,  H01J37/32

CPC classification number: H01J37/32724 ,  H01J37/32091 ,  H01J37/32431 ,  H01J37/32522 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32532 ,  H01J37/32642 ,  H01J2237/2007 ,  H01J2237/3343

Abstract: A plasma processing method of processing a substrate with plasma in a plasma processing apparatus. The plasma processing apparatus includes: a chamber configured to accommodate a substrate; an upper electrode structure forming an upper portion of the chamber and including a temperature-controlled plate, an electrode plate disposed below the temperature-controlled plate, and an electrostatic attractor, the electrostatic attractor including a contact surface, an attraction surface, a first electrode, and a second electrode; a power supply configured to apply a voltage to the first and second electrodes; and a temperature obtaining portion configured to acquire a temperature distribution of the electrode plate. The plasma processing method includes: acquiring, by the temperature obtaining portion, the temperature distribution; applying a first voltage to the first electrode and applying a second voltage to the second electrode according to the acquired temperature distribution; and processing the substrate with plasma.

公开(公告)号：US20240120182A1

公开(公告)日：2024-04-11

申请号：US18477047

申请日：2023-09-28

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yusuke KIKUCHI ,  Masato Shinada

IPC: H01J37/32 ,  C23C14/35 ,  C23C14/50

CPC classification number: H01J37/32724 ,  C23C14/352 ,  C23C14/50 ,  H01J37/345 ,  H01J2237/002 ,  H01J2237/2007 ,  H01J2237/332

Abstract: There is a placing table comprising: an electrostatic chuck having a chuck electrode, wherein the electrostatic chuck is configured to attract and hold a substrate on a placing surface and to be rotatable; a freezing device having a contact surface in contact with or separated from a surface of the electrostatic chuck opposite to the placing surface and configured to cool the electrostatic chuck; and a power controller configured to superimpose a radio frequency (RF) bias voltage applied to the electrostatic chuck on a chuck voltage applied to the chuck electrode.

公开(公告)号：US20240112894A1

公开(公告)日：2024-04-04

申请号：US18371641

申请日：2023-09-22

Applicant: Applied Materials, Inc.

Inventor： Sankaranarayanan RAVI ,  Alvaro GARCIA ,  Martin Perez GUZMAN ,  Stephen D. PROUTY ,  Andreas SCHMID

IPC: H01J37/32 ,  H01L21/683

CPC classification number: H01J37/32724 ,  H01L21/6833 ,  H01J2237/002 ,  H01J2237/2007

Abstract: A method and apparatus for cooling a semiconductor chamber are described herein. A semiconductor chamber component, includes a powered region, a grounded region, and a fluid conduit disposed within the semiconductor chamber component and passing through the powered region and grounded region, the fluid conduit comprising a ceramic material.

公开(公告)号：US20240105417A1

公开(公告)日：2024-03-28

申请号：US18202155

申请日：2023-05-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yeoseon Choi ,  Donghoon Kwon

IPC: H01J37/20 ,  H01J37/26

CPC classification number: H01J37/20 ,  H01J37/261 ,  H01J2237/2007

Abstract: A sample holder includes a head, a first holding plate extending in a first direction from one surface of the head and including at least one first sample hole configured to accommodate at least one first sample and a first main surface configured such that the at least one first sample accommodated in the at least one first sample hole is exposed at the first main surface, and a second holding plate extending in the first direction from the one surface of the head and including at least one second sample hole configured to accommodate at least one second sample and a second main surface configured such that the at least one second sample accommodated in the at least one second sample hole is exposed at the second main surface, wherein a direction perpendicular to the first main surface of the first holding plate differs from a direction perpendicular to the second main surface of the second holding plate.

公开(公告)号：US11942350B2

公开(公告)日：2024-03-26

申请号：US17645521

申请日：2021-12-22

Applicant: SHINKO ELECTRIC INDUSTRIES CO., LTD.

Inventor： Masakuni Miyazawa ,  Mizuki Watanabe ,  Tomohiro Inoue

IPC: H01L21/683 ,  H01J37/32

CPC classification number: H01L21/6833 ,  H01J37/32715 ,  H01J2237/2007 ,  H01J2237/334

Abstract: An electrostatic chuck includes a base having a surface on which an object is to be placed, and a through hole extending through the base, wherein a porous material containing angular ceramic particles is disposed in the through hole.

公开(公告)号：US20240087839A1

公开(公告)日：2024-03-14

申请号：US17943753

申请日：2022-09-13

Applicant: Applied Materials, Inc.

Inventor： Dawei Sun ,  Eric D. Hermanson ,  Benjamin E. Heneveld

IPC: H01J37/20 ,  G02F1/163 ,  H01J37/02 ,  H05B1/02

CPC classification number: H01J37/20 ,  G02F1/163 ,  H01J37/023 ,  H05B1/0233 ,  H01J37/3171 ,  H01J2237/2007

Abstract: A workpiece mounting system comprising a chuck and a base is disclosed. The emissivity of the base is increased to allow more heat transfer from the chuck to the base. In some embodiments, the emissivity of the base may be controllable so that for ion beams with lower power levels, the emissivity remains low, enabling the chuck to reach the desired temperature quickly. For ion beams with higher power levels, the emissivity may increase to allow more heat transfer to the base, allowing the chuck to maintain the desired temperature. High emissivity coatings may be applied to the top surface of the base. In other embodiments, a set of movable shields may be disposed between the chuck and the base. The position of the shields may be a function of the power level of the incoming ion beam.

公开(公告)号：US11929251B2

公开(公告)日：2024-03-12

申请号：US17103938

申请日：2020-11-24

Applicant: ASM IP Holding B.V.

Inventor： Toshihisa Nozawa

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/40 ,  C23C16/455 ,  C23C16/458 ,  C23C16/505 ,  H01J37/32 ,  H01L21/683 ,  H01L23/00

CPC classification number: H01L21/02274 ,  C23C16/34 ,  C23C16/40 ,  C23C16/4586 ,  C23C16/505 ,  H01J37/321 ,  H01J37/32192 ,  H01J37/3244 ,  H01J37/32568 ,  H01J37/32715 ,  H01L21/6833 ,  H01L23/562 ,  H01J2237/2007 ,  H01J2237/20235 ,  H01J2237/332

Abstract: Examples of a substrate processing apparatus includes a chamber, an upper cover provided inside the chamber, an electrostatic chuck which includes an annular portion of a dielectric body and an embedded electrode embedded into the annular portion, the electrostatic chuck being provided inside the chamber, and a plasma unit configured to generate plasma in a region below the upper cover and the electrostatic chuck, wherein the annular portion includes an annular first upper surface located immediately below the upper cover, and a second upper surface located immediately below the upper cover and surrounding the first upper surface, the second upper surface having a height higher than a height of the first upper surface.

公开(公告)号：US11906466B2

公开(公告)日：2024-02-20

申请号：US17176426

申请日：2021-02-16

Applicant: Tokyo Electron Limited

Inventor： Takayuki Hatanaka ,  Tong Wu ,  Satoshi Nomura

IPC: G01K11/26 ,  H01L21/67 ,  G01K1/024 ,  G01K1/02 ,  G01N29/02 ,  G01N29/12 ,  G01N29/24 ,  G01B5/30 ,  H01J37/32

CPC classification number: G01N29/022 ,  G01B5/30 ,  G01K1/024 ,  G01K1/026 ,  G01K11/265 ,  G01N29/12 ,  G01N29/2462 ,  H01J37/32917 ,  H01L21/67069 ,  H01L21/67248 ,  G01N2291/2697 ,  H01J37/32091 ,  H01J37/32715 ,  H01J2237/2007 ,  H01J2237/24592 ,  H01J2237/334

Abstract: A measurement method performed by a semiconductor manufacturing apparatus including a chamber is provided. In the measurement method, first measurement data including a signal of a resonance frequency of the chamber is acquired as reference data, in response to transmitting an electrical signal into the chamber while a jig capable of performing wireless communication is not placed in the chamber. Subsequently, second measurement data including the signal of the resonance frequency of the chamber and including a signal of a resonance frequency of a sensor installed in the jig is acquired, in response to transmitting an electrical signal into the chamber while the jig is placed in the chamber. By subtracting the reference data from the second measurement data, third measurement data is calculated.