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    Physical vapor deposition of an amorphous silicon liner to eliminate resist poisoning
    12.
    发明授权
    Physical vapor deposition of an amorphous silicon liner to eliminate resist poisoning 有权
    非晶硅衬垫的物理气相沉积以消除抗蚀剂中毒

    公开(公告)号：US06645864B1

    公开(公告)日：2003-11-11

    申请号：US10068045

    申请日：2002-02-05

    Applicant: Cheng Chung Lin ,  Lain Jong Li

    Inventor： Cheng Chung Lin ,  Lain Jong Li

    IPC: H01L2100

    CPC classification number: H01L21/76846 ,  H01L21/76808 ,  H01L21/76855

    Abstract: A layer of low k dielectric is formed on a substrate having a conducting electrode formed therein. A via hole is formed in the low k dielectric exposing the conducting electrode. A thin layer of amorphous silicon is deposited on the layer of low k dielectric and on the sidewalls and bottom of a via hole. A layer of resist is then formed and patterned with a trench pattern. A trench is etched in the layer of low k dielectric directly over the via hole using the patterned layer of resist. The patterned layer of resist is then stripped and the trench and via hole are filled with conducting material. The layer of amorphous silicon prevents amine radicals, NHx, which can be released from the low k dielectric, especially during the via hole etching, from interacting with the resist and forming resist scum resulting in via poisoning.

    Abstract translation: 在其上形成有导电电极的基板上形成低k电介质层。 在暴露导电电极的低k电介质中形成通孔。 非晶硅薄层沉积在低k电介质层和通孔的侧壁和底部上。 然后形成抗蚀剂层并用沟槽图案构图。 使用图案化的抗蚀剂层，在通孔上直接在低k电介质层中蚀刻沟槽。 然后剥离图案化的抗蚀剂层，并且用导电材料填充沟槽和通孔。 非晶硅层防止胺自由基NH x，其可以从低k电介质释放，特别是在通孔蚀刻期间，与抗蚀剂相互作用并形成导致通过中毒的抗蚀剂浮渣。

    Low temperature method to form low k dielectric
    13.
    发明授权
    Low temperature method to form low k dielectric 有权
    低温方法形成低k电介质

    公开(公告)号：US06197706B1

    公开(公告)日：2001-03-06

    申请号：US09607042

    申请日：2000-06-30

    Applicant: Lain-Jang Li ,  Cheng-Chung Lin ,  Syun-Ming Jang

    Inventor： Lain-Jang Li ,  Cheng-Chung Lin ,  Syun-Ming Jang

    IPC: H01L2131

    CPC classification number: H01L21/3146

    Abstract: Black diamond films, deposited using PECVD at low substrate temperatures, have been effectively stabilized by immersing them in de-ionized water at a temperature of about 90° C. for about 20 minutes or in a hydrogen peroxide solution (typically at a concentration of 10%) for about 60 minutes. Since it has been observed that the dielectric constant of the stabilized film increases with both immersion time and/or peroxide concentration, this effect may be used as a means for adjusting the dielectric constant of a black diamond film. Standard analytical techniques confirm that these low temperature stabilized films have electrical properties that are at least as good as those of films stabilized using high temperature heat treatments.

    Abstract translation: 通过在约90℃的温度下将它们浸入去离子水中约20分钟或在过氧化氢溶液中（通常浓度为10），已经有效地稳定了在低基材温度下使用PECVD沉积的黑色金刚石膜 ％）约60分钟。 由于已经观察到稳定的膜的介电常数随着浸渍时间和/或过氧化物浓度的增加而增加，所以该效果可以用作调整黑色金刚石膜的介电常数的手段。 标准分析技术证实这些低温稳定膜的电性能至少与使用高温热处理稳定的膜的电性能一样好。

    Surface treatment of metal interconnect lines
    19.
    发明授权
    Surface treatment of metal interconnect lines 有权
    金属互连线的表面处理

    公开(公告)号：US08053894B2

    公开(公告)日：2011-11-08

    申请号：US11213238

    申请日：2005-08-26

    Applicant: Wen-Kai Wan ,  Yih-Hsiung Lin ,  Ming-Ta Lei ,  Baw-Ching Perng ,  Cheng-Chung Lin ,  Chia-Hui Lin ,  Ai-Sen Liu

    Inventor： Wen-Kai Wan ,  Yih-Hsiung Lin ,  Ming-Ta Lei ,  Baw-Ching Perng ,  Cheng-Chung Lin ,  Chia-Hui Lin ,  Ai-Sen Liu

    IPC: H01L23/48

    CPC classification number: H01L21/76843 ,  H01L21/288 ,  H01L21/76849 ,  H01L21/76858 ,  H01L21/76886

    Abstract: Apparatus for forming a semiconductor structure comprising a first layer on top of a substrate wherein the first layer defines conductive regions such as copper interconnect lines and non-conductive regions such as dielectric materials. The conductive regions are covered by a second layer of a material different than the first layer such as for example nickel and then the structure is heat treated such that the interconnect lines and second metal, such as a copper interconnect line and a nickel second layer, interact with each other to form an alloy layer. The alloy layer has superior qualities for adhering to both the copper interconnect lines and a subsequently deposited dielectric material.

    Abstract translation: 用于形成半导体结构的装置，其包括在衬底的顶部上的第一层，其中第一层限定诸如铜互连线和非导电区域（例如介电材料）的导电区域。 导电区域被不同于第一层的材料的第二层（例如镍）覆盖，然后对该结构进行热处理，使得互连线和第二金属（例如铜互连线和镍第二层） 相互作用形成合金层。 合金层具有优异的粘附于铜互连线和随后沉积的电介质材料的品质。

    Musical rotating luminous device
    20.
    发明授权
    Musical rotating luminous device 失效
    音乐旋转发光装置

    公开(公告)号：US06171170B2

    公开(公告)日：2001-01-09

    申请号：US09472904

    申请日：1999-12-27

    Applicant: Cheng-Chung Lin

    Inventor： Cheng-Chung Lin

    IPC: A63H500

    CPC classification number: A63H5/00

    Abstract: A type of musical rotating luminous device is composed of a base, retarding device, rotating stand, outer shell and a luminous device. It utilizes the battery's power within the base to make the motor drive the retarding device. Within the said rotating stand, a central shaft is connected to a retarding device. At one end of the central shaft, a drive sprocket is fitted on, while the other end is attached to a stand's rotary wheel. Additionally, in each corner of a containment space, a plurality of shaft rods pass through the stand. At the other end of the shaft rods, drive sprockets of different diameter sizes are attached. Between the shaft rods and the central shaft the drive sprockets engage a plurality of driven sprockets, transferring the driven force. Furthermore, the outer shell houses the said base, retarding device and rotating stand. When in use, and due to the different diameter sizes of the drive sprockets, the central shaft and the shaft rods will spin at different speeds. Moreover, the luminous device will flash a colorful and eye-catching light, creating a type of free spinning, safely interesting, visually beautiful and multi functional children's toy.

    Abstract translation: 一种音乐旋转发光装置由基座，延迟装置，旋转支架，外壳和发光装置组成。 它利用电池在基座内的电源使电机驱动减速装置。 在所述旋转支架内，中心轴连接到延迟装置。 在中心轴的一端，安装有驱动链轮，而另一端连接到支架的旋转轮。 此外，在容纳空间的每个角落中，多个轴杆穿过支架。 在轴杆的另一端，安装不同直径尺寸的驱动链轮。 在杆杆和中心轴之间，驱动链轮接合多个从动链轮，传递驱动力。 此外，外壳容纳所述基座，延迟装置和旋转支架。 当使用中，并且由于驱动链轮的直径尺寸不同，中心轴和轴杆将以不同的速度旋转。 此外，发光装置将闪烁五颜六色，醒目的光线，创造出一种自由旋转，安全有趣，视觉美丽和多功能儿童玩具。

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