公开(公告)号：US06891241B2

公开(公告)日：2005-05-10

申请号：US10950582

申请日：2004-09-28

Applicant: Dong-wook Kim ,  In-kyeong Yoo ,  Jung-hyun Sok ,  June-key Lee

Inventor： Dong-wook Kim ,  In-kyeong Yoo ,  Jung-hyun Sok ,  June-key Lee

IPC: G11C11/15 ,  H01L21/8246 ,  H01L21/8247 ,  H01L27/105 ,  H01L27/22 ,  H01L29/788 ,  H01L29/792 ,  H01L43/08 ,  H01L29/82 ,  H01L43/00

CPC classification number: H01L27/228 ,  B82Y10/00

Abstract: A single transistor type magnetic random access memory device and a method of operating and manufacturing the same, wherein the single transistor type magnetic random access memory device includes a substrate, first and second doped regions spaced apart from each other, a gate dielectric layer on a portion of the semiconductor substrate between the first and second doped regions, a magnetic tunnel junction on the gate dielectric layer, word lines on the magnetic tunnel junction extending in a first direction which is the same direction as the second doped region, bit lines connected to the first doped region in a second direction perpendicular to the first direction, and an insulating layer covering the gate dielectric layer, the magnetic tunnel junction, and the word lines. The single transistor type magnetic random access memory device has a simple circuit structure, has a prolonged lifetime and is easy to manufacture.

公开(公告)号：US07767502B2

公开(公告)日：2010-08-03

申请号：US11702057

申请日：2007-02-05

Applicant: Do-young Kim ,  Wan-jun Park ,  Young-soo Park ,  June-key Lee ,  Yo-sep Min ,  Jang-yeon Kwon ,  Sun-ae Seo ,  Young-min Choi ,  Soo-doo Chae

Inventor： Do-young Kim ,  Wan-jun Park ,  Young-soo Park ,  June-key Lee ,  Yo-sep Min ,  Jang-yeon Kwon ,  Sun-ae Seo ,  Young-min Choi ,  Soo-doo Chae

IPC: H01L21/84 ,  H01L21/00

CPC classification number: H01L29/78603 ,  G02F1/133305 ,  G02F1/136227 ,  G02F2201/50 ,  H01L23/3192 ,  H01L24/24 ,  H01L24/82 ,  H01L27/1214 ,  H01L27/3248 ,  H01L27/3258 ,  H01L29/66757 ,  H01L51/5253 ,  H01L2224/32225 ,  H01L2224/73267 ,  H01L2224/92244 ,  H01L2251/5338 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01009 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01027 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01058 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/00

Abstract: In a thin film semiconductor device realized on a flexible substrate, an electronic device using the same, and a manufacturing method thereof, the thin film semiconductor device and an electronic device include a flexible substrate, a semiconductor chip, which is formed on the flexible substrate, and a protective cap, which seals the semiconductor chip. Durability of the thin film semiconductor device against stress due to bending of the substrate is improved by using the protective cap.

Abstract translation: 在柔性基板上实现的薄膜半导体器件，使用该薄膜半导体器件的电子器件及其制造方法中，薄膜半导体器件和电子器件包括柔性基板，形成在柔性基板上的半导体芯片 以及密封半导体芯片的保护盖。 通过使用保护盖，可以提高薄膜半导体器件对由于基板弯曲引起的应力的耐久性。

公开(公告)号：US20080293256A1

公开(公告)日：2008-11-27

申请号：US12153104

申请日：2008-05-14

Applicant: Young-jin Cho ,  Yo-sep Min ,  Young-soo Park ,  Jung-hyun Lee ,  June-key Lee ,  Yong-kyun Lee

Inventor： Young-jin Cho ,  Yo-sep Min ,  Young-soo Park ,  Jung-hyun Lee ,  June-key Lee ,  Yong-kyun Lee

IPC: H01L21/316

CPC classification number: H01L21/28185 ,  C01G29/006 ,  C01P2002/36 ,  C01P2002/72 ,  C01P2002/77 ,  C01P2002/85 ,  C01P2002/89 ,  C01P2004/03 ,  C01P2004/04 ,  C01P2004/80 ,  C01P2006/40 ,  C04B35/16 ,  C04B35/475 ,  C04B35/6264 ,  C04B2235/3232 ,  C04B2235/3298 ,  C04B2235/3418 ,  C04B2235/441 ,  C04B2235/444 ,  C04B2235/658 ,  C04B2235/6581 ,  C04B2235/76 ,  H01L21/28194 ,  H01L21/31691 ,  H01L28/55 ,  H01L29/516 ,  H01L29/517

Abstract: A bismuth titanium silicon oxide having a pyrochlore phase, a thin film formed of the bismuth titanium silicon oxide, a method for forming the bismuth-titanium-silicon oxide thin film, a capacitor and a transistor for a semiconductor device including the bismuth-titanium-silicon oxide thin film, and an electronic device employing the capacitor and/or the transistor are provided. The bismuth titanium silicon oxide has good dielectric properties and is thermally and chemically stable. The bismuth-titanium-silicon oxide thin film can be effectively used as a dielectric film of a capacitor or as a gate dielectric film of a transistor in a semiconductor device. Various electronic devices having good electrical properties can be manufactured using the capacitor and/or the transistor having the bismuth-titanium-silicon oxide film.

Abstract translation: 具有烧绿石相的铋钛氧化硅，由氧化铋钛氧化物形成的薄膜，用于形成铋钛氧化硅薄膜的方法，用于半导体器件的电容器和晶体管，所述半导体器件包括铋钛 - 氧化硅薄膜以及采用电容器和/或晶体管的电子器件。 铋钛氧化硅具有良好的介电性能，并且是热和化学稳定的。 铋钛氧化硅薄膜可以有效地用作半导体器件中的电容器或晶体管的栅极电介质膜的电介质膜。 可以使用具有铋钛 - 氧化硅膜的电容器和/或晶体管来制造具有良好电性能的各种电子器件。

公开(公告)号：US06919597B2

公开(公告)日：2005-07-19

申请号：US10634841

申请日：2003-08-06

Applicant: Young-jin Cho ,  Yo-sep Min ,  Young-soo Park ,  Jung-hyun Lee ,  June-key Lee ,  Yong-kyun Lee

Inventor： Young-jin Cho ,  Yo-sep Min ,  Young-soo Park ,  Jung-hyun Lee ,  June-key Lee ,  Yong-kyun Lee

IPC: C01B33/00 ,  C01G29/00 ,  C04B35/475 ,  C23C14/06 ,  C23C16/42 ,  H01L21/02 ,  H01L21/28 ,  H01L21/316 ,  H01L21/8242 ,  H01L27/108 ,  H01L29/51 ,  H01L29/76

CPC classification number: H01L21/28185 ,  C01G29/006 ,  C01P2002/36 ,  C01P2002/72 ,  C01P2002/77 ,  C01P2002/85 ,  C01P2002/89 ,  C01P2004/03 ,  C01P2004/04 ,  C01P2004/80 ,  C01P2006/40 ,  C04B35/16 ,  C04B35/475 ,  C04B35/6264 ,  C04B2235/3232 ,  C04B2235/3298 ,  C04B2235/3418 ,  C04B2235/441 ,  C04B2235/444 ,  C04B2235/658 ,  C04B2235/6581 ,  C04B2235/76 ,  H01L21/28194 ,  H01L21/31691 ,  H01L28/55 ,  H01L29/516 ,  H01L29/517

Abstract: A bismuth titanium silicon oxide having a pyrochlore phase, a thin film formed of the bismuth titanium silicon oxide, a method for forming the bismuth-titanium-silicon oxide thin film, a capacitor and a transistor for a semiconductor device including the bismuth-titanium-silicon oxide thin film, and an electronic device employing the capacitor and/or the transistor are provided. The bismuth titanium silicon oxide has good dielectric properties and is thermally and chemically stable. The bismuth-titanium-silicon oxide thin film can be effectively used as a dielectric film of a capacitor or as a gate dielectric film of a transistor in a semiconductor device. Various electronic devices having good electrical properties can be manufactured using the capacitor and/or the transistor having the bismuth-titanium-silicon oxide film.

Abstract translation: 具有烧绿石相的铋钛氧化硅，由氧化铋钛氧化物形成的薄膜，用于形成铋钛氧化硅薄膜的方法，用于半导体器件的电容器和晶体管，所述半导体器件包括铋钛 - 氧化硅薄膜以及采用电容器和/或晶体管的电子器件。 铋钛氧化硅具有良好的介电性能，并且是热和化学稳定的。 铋钛氧化硅薄膜可以有效地用作半导体器件中的电容器或晶体管的栅极电介质膜的电介质膜。 可以使用具有铋钛 - 氧化硅膜的电容器和/或晶体管来制造具有良好电性能的各种电子器件。

公开(公告)号：US06391119B1

公开(公告)日：2002-05-21

申请号：US09348477

申请日：1999-07-07

Applicant: June Key Lee ,  Chang Jung Kim ,  Chung Il-Sub

Inventor： June Key Lee ,  Chang Jung Kim ,  Chung Il-Sub

IPC: H01L2978

CPC classification number: H01L21/02071 ,  H01L21/31111 ,  H01L21/31691

Abstract: A method for cleaning a PZT thin film using an etchant is provided. The method employs a combination of HF (or buffered oxide etchant (BOE)) and acetic acid, or a combination of HF(BOE), acetic acid and alcohol, as an etchant to thus reduce an etching rate of a PZT thin film, which is greatly dependent on the density of HF, thereby etching the PZT thin film to a finer dimension of thickness of 100Å or less using the etchant. Therefore, only secondary phase crystals or etching damaged layers on the surface of the PZT thin film can be eliminated.

Abstract translation: 提供了使用蚀刻剂清洗PZT薄膜的方法。 该方法采用HF（或缓冲氧化物蚀刻剂（BOE））和乙酸或HF（BOE），乙酸和醇的组合作为蚀刻剂的组合，从而降低PZT薄膜的蚀刻速率， 很大程度上取决于HF的密度，从而使用蚀刻剂将PZT薄膜蚀刻到厚度为100埃或更小的更细的尺寸。 因此，可以仅消除PZT薄膜表面上的次相晶体或蚀刻损伤层。

公开(公告)号：US08859413B2

公开(公告)日：2014-10-14

申请号：US12073097

申请日：2008-02-29

Applicant: Sung-soo Park ,  June-key Lee

Inventor： Sung-soo Park ,  June-key Lee

IPC: H01L21/28 ,  H01L21/02 ,  H01L33/00 ,  H01L33/12 ,  H01L33/20

CPC classification number: H01L21/02381 ,  H01L21/02488 ,  H01L21/02491 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02645 ,  H01L33/007 ,  H01L33/12 ,  H01L33/20

Abstract: Example embodiments are directed to a method of growing GaN single crystals on a silicon substrate, a method of manufacturing a GaN-based light emitting device using the silicon substrate, and a GaN-based light emitting device. The method of growing the GaN single crystals may include forming a buffer layer including a TiN group material or other like material on a silicon substrate, forming a nano-pattern including silicon oxide on the buffer layer, and growing GaN single crystals on the buffer layer and the nano-pattern.

Abstract translation: 示例性实施例涉及在硅衬底上生长GaN单晶的方法，使用该硅衬底的GaN基发光器件的制造方法以及GaN基发光器件。 生长GaN单晶的方法可以包括在硅衬底上形成包括TiN基材料或其它类似材料的缓冲层，在缓冲层上形成包括氧化硅的纳米图案，以及在缓冲层上生长GaN单晶 和纳米图案。

公开(公告)号：US08257984B2

公开(公告)日：2012-09-04

申请号：US11319555

申请日：2005-12-29

Applicant: June-key Lee ,  Young-soo Park

Inventor： June-key Lee ,  Young-soo Park

IPC: H01L29/72

CPC classification number: H01L27/11507 ,  H01L21/76895 ,  H01L27/11502 ,  H01L28/55 ,  H01L28/75

Abstract: A ferroelectric capacitor and a method of manufacturing the same are provided, wherein the ferroelectric capacitor of a semiconductor device, which sequentially includes a lower electrode, a ferroelectric layer, and an upper electrode on a conductive layer connected to a transistor formed on a semiconductor substrate, includes an oxidation preventing layer between the conductive layer and the lower electrode. The oxidation preventing layer prevents the conductive layer from being oxidized during high-temperature heat treatment of the ferroelectric layer. Accordingly, the oxidation resistivity of the interfaces of the conductive layer, used as a storage node, and the lower electrode, which faces the conductive layer, increases, so a temperature at which a ferroelectric thin layer is formed can be also increased. Consequently, a ferroelectric thin layer having excellent characteristics may be obtained.

Abstract translation: 提供了一种强电介质电容器及其制造方法，其中，在连接到形成在半导体衬底上的晶体管的导电层上依次包括下电极，铁电体层和上电极的半导体器件的强电介质电容器 包括在导电层和下电极之间的氧化防止层。 氧化防止层防止了导电层在铁电层的高温热处理期间被氧化。 因此，用作存储节点的导电层和面向导电层的下电极的界面的氧化电阻增加，因此也可以增加形成铁电薄层的温度。 因此，可以获得具有优异特性的铁电薄层。

公开(公告)号：US07892917B2

公开(公告)日：2011-02-22

申请号：US12153104

申请日：2008-05-14

Applicant: Young-jin Cho ,  Yo-sep Min ,  Young-soo Park ,  Jung-hyun Lee ,  June-key Lee ,  Yong-kyun Lee

Inventor： Young-jin Cho ,  Yo-sep Min ,  Young-soo Park ,  Jung-hyun Lee ,  June-key Lee ,  Yong-kyun Lee

IPC: H01L21/8242

CPC classification number: H01L21/28185 ,  C01G29/006 ,  C01P2002/36 ,  C01P2002/72 ,  C01P2002/77 ,  C01P2002/85 ,  C01P2002/89 ,  C01P2004/03 ,  C01P2004/04 ,  C01P2004/80 ,  C01P2006/40 ,  C04B35/16 ,  C04B35/475 ,  C04B35/6264 ,  C04B2235/3232 ,  C04B2235/3298 ,  C04B2235/3418 ,  C04B2235/441 ,  C04B2235/444 ,  C04B2235/658 ,  C04B2235/6581 ,  C04B2235/76 ,  H01L21/28194 ,  H01L21/31691 ,  H01L28/55 ,  H01L29/516 ,  H01L29/517

Abstract: A bismuth titanium silicon oxide having a pyrochlore phase, a thin film formed of the bismuth titanium silicon oxide, a method for forming the bismuth-titanium-silicon oxide thin film, a capacitor and a transistor for a semiconductor device including the bismuth-titanium-silicon oxide thin film, and an electronic device employing the capacitor and/or the transistor are provided. The bismuth titanium silicon oxide has good dielectric properties and is thermally and chemically stable. The bismuth-titanium-silicon oxide thin film can be effectively used as a dielectric film of a capacitor or as a gate dielectric film of a transistor in a semiconductor device. Various electronic devices having good electrical properties can be manufactured using the capacitor and/or the transistor having the bismuth-titanium-silicon oxide film.

Abstract translation: 具有烧绿石相的铋钛氧化硅，由氧化铋钛氧化物形成的薄膜，用于形成铋钛氧化硅薄膜的方法，用于半导体器件的电容器和晶体管，所述半导体器件包括铋钛 - 氧化硅薄膜以及采用电容器和/或晶体管的电子器件。 铋钛氧化硅具有良好的介电性能，并且是热和化学稳定的。 铋钛氧化硅薄膜可以有效地用作半导体器件中的电容器或晶体管的栅极电介质膜的电介质膜。 可以使用具有铋钛 - 氧化硅膜的电容器和/或晶体管来制造具有良好电性能的各种电子器件。

公开(公告)号：US07560042B2

公开(公告)日：2009-07-14

申请号：US11819425

申请日：2007-06-27

Applicant: Yong-kyun Lee ,  Young-soo Park ,  June-key Lee

Inventor： Yong-kyun Lee ,  Young-soo Park ,  June-key Lee

IPC: H01L41/18

CPC classification number: C04B35/6264 ,  C01G23/002 ,  C01G25/006 ,  C01P2002/72 ,  C01P2004/03 ,  C01P2006/40 ,  C04B35/491 ,  C04B2235/3227 ,  C04B2235/3232 ,  C04B2235/3244 ,  C04B2235/3296 ,  C04B2235/3298 ,  C04B2235/3418 ,  C04B2235/3427 ,  C04B2235/44 ,  C04B2235/441 ,  C04B2235/449 ,  C04B2235/483 ,  H01L21/31691

Abstract: A composition for forming a ferroelectric thin film includes: a PZT sol-gel solution including at least one of: a whole or partial hydrolysate of a lead precursor and a whole or partial hydrolyzed and polycondensated product thereof; a whole or partial hydrolysate of a zirconium precursor, a whole or partial hydrolyzed and polycondensated product thereof, and a zirconium complex having at least one hydroxy ion and at least one non-hydrolyzable ligand; and a whole or partial hydrolysate of a titanium precursor, a whole or partial hydrolyzed and polycondensated product thereof, and a titanium complex having at least one hydroxyl ion and at least one non-hydrolyzable ligand; and a Bi2SiO5 sol-gel solution including at least one of: a whole or partial hydrolysate of a silicon precursor and a whole or partial hydrolyzed and polycondensated product thereof, and a resultant obtained by refluxing triphenyl bismuth as a bismuth precursor.

Abstract translation: 用于形成铁电薄膜的组合物包括：PZT溶胶 - 凝胶溶液，其包含铅前体的全部或部分水解产物及其全部或部分水解缩聚产物中的至少一种; 锆前体的全部或部分水解产物，其全部或部分水解和缩聚产物，以及具有至少一个羟基离子和至少一种不可水解配体的锆络合物; 以及钛前体，其全部或部分水解缩聚产物和具有至少一个羟基离子和至少一个不可水解配体的钛络合物的全部或部分水解产物; 和包含硅前体的全部或部分水解产物及其全部或部分水解和缩聚产物中的至少一种的Bi 2 SiO 5溶胶 - 凝胶溶液，以及通过回流作为铋前体的三苯基铋得到的产物。

公开(公告)号：US20080237551A1

公开(公告)日：2008-10-02

申请号：US11819425

申请日：2007-06-27

Applicant: Yong-kyun Lee ,  Young-soo Park ,  June-key Lee

Inventor： Yong-kyun Lee ,  Young-soo Park ,  June-key Lee

IPC: H01B1/02

CPC classification number: C04B35/6264 ,  C01G23/002 ,  C01G25/006 ,  C01P2002/72 ,  C01P2004/03 ,  C01P2006/40 ,  C04B35/491 ,  C04B2235/3227 ,  C04B2235/3232 ,  C04B2235/3244 ,  C04B2235/3296 ,  C04B2235/3298 ,  C04B2235/3418 ,  C04B2235/3427 ,  C04B2235/44 ,  C04B2235/441 ,  C04B2235/449 ,  C04B2235/483 ,  H01L21/31691

Abstract: A composition for forming a ferroelectric thin film includes: a PZT sol-gel solution including at least one of: a whole or partial hydrolysate of a lead precursor and a whole or partial hydrolyzed and polycondensated product thereof; a whole or partial hydrolysate of a zirconium precursor, a whole or partial hydrolyzed and polycondensated product thereof, and a zirconium complex having at least one hydroxy ion and at least one non-hydrolyzable ligand; and a whole or partial hydrolysate of a titanium precursor, a whole or partial hydrolyzed and polycondensated product thereof, and a titanium complex having at least one hydroxyl ion and at least one non-hydrolyzable ligand; and a Bi2SiO5 sol-gel solution including at least one of: a whole or partial hydrolysate of a silicon precursor and a whole or partial hydrolyzed and polycondensated product thereof, and a resultant obtained by refluxing triphenyl bismuth as a bismuth precursor.

Abstract translation: 用于形成铁电薄膜的组合物包括：PZT溶胶 - 凝胶溶液，其包含铅前体的全部或部分水解产物及其全部或部分水解缩聚产物中的至少一种; 锆前体的全部或部分水解产物，其全部或部分水解和缩聚产物，以及具有至少一个羟基离子和至少一种不可水解配体的锆络合物; 以及钛前体，其全部或部分水解缩聚产物和具有至少一个羟基离子和至少一个不可水解配体的钛络合物的全部或部分水解产物; 和包含硅前体的全部或部分水解产物及其全部或部分水解和缩聚产物中的至少一种的Bi 2 SiO 5溶胶 - 凝胶溶液， 和通过回流作为铋前体的三苯基铋获得的结果。