Abstract:
A capacitive module is provided. The capacitive module may include a first capacitor including a first electrode and a second electrode, one of the first electrode and the second electrode being coupled to at least one first conductive via and the other one of the first electrode and the second electrode being coupled to at least one second conductive via. The capacitive module may also include a second capacitor spaced apart from the first capacitor, the second capacitor including a third electrode and a fourth electrode, one of the third electrode and the fourth electrode being coupled to the at least one first conductive via and the other one of the third electrode and the fourth electrode being coupled to the at least one second conductive via. Furthermore, the capacitive module may include a first conductive plane being electrically coupled to a first plane with a first polarity through one of the at least one first conductive via and a second conductive plane being electrically coupled to a second plane with a second polarity, opposite to the first polarity, through one of the at least one second conductive via.
Abstract:
An ESD protection structure is provided. A substrate includes a first voltage variable material and has a first surface, a second surface substantially paralleled to the first surface and a via connecting the first and second surfaces. A first metal layer is disposed in the substrate for coupling to a ground terminal. The first voltage variable material is in a conductive state when an ESD event occurs, such that the via is electrically connected with the first metal layer to form a discharge path, and the first voltage variable material is in an isolation state when the ESD event is absent, such that the via is electrically isolated from the first metal layer.
Abstract:
A hybrid capacitor is provided which includes a substrate, at least one plate capacitor and at least one through hole capacitor. The substrate has through holes and the plate capacitors are on the substrate. At least one through hole capacitor and at least one plate capacitor are in parallel. The through hole capacitor at least includes an anode layer, a first dielectric layer, a first cathode layer and a second cathode layer. The anode layer is disposed on an inner surface of at least one through hole, and a surface of the anode layer is a porous structure. The first dielectric layer is disposed on the porous structure of the anode layer and covered with the first cathode layer. The first cathode layer is covered with the second cathode layer. A conductivity of the second cathode layer is larger than a conductivity of the first cathode layer.
Abstract:
A through hole capacitor at least including a substrate, an anode layer, a dielectric layer, a first cathode layer, and a second cathode layer is provided. The substrate has a plurality of through holes. The anode layer is disposed on the inner surface of at least one through hole, and the surface of the anode layer is a porous structure. The dielectric layer is disposed on the porous structure of the anode layer. The first cathode layer covers a surface of the dielectric layer. The second cathode layer covers a surface of the first cathode layer, and the conductivity of the second cathode layer is greater than that of the first cathode layer. The through hole capacitor can be used for impedance control, as the cathode layers of the through hole are used for signal transmission.
Abstract:
A multi-tier capacitor structure has at least one multi-tier conductive layer. At least one conductive via passes through the multi-tier conductive layer. When currents flow through the conductive via, different current paths are presented in the conductive via in response to different current frequency; in other words, different inductor is induced. Therefore, a single plate capacitor structure has function of hierarchical decoupling capacitor effect.
Abstract:
A multi-functional composite substrate structure is provided. The first substrate with high dielectric constant and the second substrate with low dielectric constant and low loss tangent are interlaced above the third substrate. One or more permeance blocks may be formed above each substrate, so that one or more inductors may be fabricated thereon. One or more capacitors may be fabricated on the first substrate. Also, one or more signal transmission traces of the system impedance are formed on the second substrate of the outside layer. Therefore, the inductance of the inductor(s) is effectively enhanced. Moreover, the area of built-in components is reduced. Furthermore, it has shorter delay time, smaller dielectric loss, and better return loss for the transmission of high speed and high frequency signal.
Abstract:
A capacitor device with a capacitance is introduced. The capacitor device includes at least one capacitive element. The at least capacitive element comprises a pair of first conductive layers being opposed to each other, at least one first dielectric layer formed on a surface of at least one of the first conductive layers, and a second dielectric layer being sandwiched between the first conductive layers. The first dielectric layer has a first dielectric constant and the second dielectric layer has a second dielectric constant. The capacitance of the capacitor device depends on dielectric parameters of the first dielectric layer and the second dielectric layer. The dielectric parameters comprise the first dielectric constant and thickness of the at least one first dielectric layer and the second dielectric constant and thickness of the second dielectric layer.
Abstract:
A complementary mirror image embedded planar resistor architecture is provided. In the architecture, a complementary hollow structure is formed on a ground plane or an electrode plane to minimize the parasitic resistance, so as to efficiently enhance the application frequency. In addition, in some cases, some signal transmission lines pass through the position below the embedded planar resistor, and if there is no shield at all, serious interference or cross talk phenomenon occurs. Therefore, the complementary hollow structure of the ground plane, the electrode plane, or a power layer adjacent to the embedded planar resistor is designed to be a mesh structure, so as to reduce the interference or cross talk phenomenon. In this manner, the whole resistor structure has preferable high frequency electrical characteristic in the circuit.
Abstract:
A method is provided for testing a built-in component including multiple terminals in a multi-layered circuit board. At least one signal pad is provided on a top surface of the multi-layered circuit board for signal transmission. Each of the signal pads are electrically connected to one of the multiple terminals. At least one test pad is provided on the top surface of the multi-layered circuit board and each of the test pads is electrically connected to one of the multiple terminals. Then, detection occurs regarding one of the signal pads and one of the test pads that are electrically connected to a same one of the multiple terminals in order to determine a connection status of an electric path extending from the one signal pad through the same one terminal to the one test pad.
Abstract:
An interleaving striped capacitor substrate structure for pressing-type print circuit boards is disclosed. To meet the high-frequency, high-speed, and high-density requirements in modern electronic systems, the interleaving striped capacitor substrate structure uses several dielectric materials of different dielectric coefficients to make a dielectric layer. One dielectric layer can be stacked on another to form a multi-layered capacitor substrate so that a single capacitor substrate can provide the highest capacitance required for the decoupling capacitor to suppress high-frequency noise signals, and the lower dielectric coefficient substrate required for high-speed signal transmission. This simultaneously achieves the effects of reducing high-frequency transmission time and suppressing high-frequency noise.